˘ ˇˆ ˇ ˇ ˙˝ˇ˛1500 µv tlv2460aid tlv2461aid — — — — tlv2460aip tlv2461aip † this...

SLOS220J − JULY 1998 − REVISED FEBRUARY 2004

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Rail-to-Rail Output Swing

Gain Bandwidth Product . . . 6.4 MHz

±80 mA Output Drive Capability

Supply Current . . . 500 µ A/channel

Input Offset Voltage . . . 100 µV

Input Noise Voltage . . . 11 nV/√Hz

Slew Rate . . . 1.6 V/µs

Micropower Shutdown Mode(TLV2460/3/5) . . . 0.3 µA/Channel

Universal Operational Amplifier EVM

Available in Q-Temp AutomotiveHighRel Automotive ApplicationsConfiguration Control/Print SupportQualification to Automotive Standards

description

The TLV246x is a family of low-power rail-to-rail input/output operational amplifiers specifically designed forportable applications. The input common-mode voltage range extends beyond the supply rails for maximumdynamic range in low-voltage systems. The amplifier output has rail-to-rail performance with high-output-drivecapability, solving one of the limitations of older rail-to-rail input/output operational amplifiers. This rail-to-raildynamic range and high output drive make the TLV246x ideal for buffering analog-to-digital converters.

The operational amplifier has 6.4 MHz of bandwidth and 1.6 V/µs of slew rate with only 500 µA of supply current,providing good ac performance with low power consumption. Three members of the family offer a shutdownterminal, which places the amplifier in an ultralow supply current mode (IDD = 0.3 µA/ch). While in shutdown,the operational-amplifier output is placed in a high-impedance state. DC applications are also well served withan input noise voltage of 11 nV/√Hz and input offset voltage of 100 µV.

This family is available in the low-profile SOT23, MSOP, and TSSOP packages. The TLV2460 is the firstrail-to-rail input/output operational amplifier with shutdown available in the 6-pin SOT23, making it perfect forhigh-density circuits. The family is specified over an expanded temperature range (TA = −40°C to 125°C) foruse in industrial control and automotive systems, and over the military temperature range(TA = −55°C to 125°C) for use in military systems.

SELECTION GUIDE

DEVICEVDD[V]

VIO[µV]

IDD/ch[µA]

IIB[pA]

GBW[MHz]

SLEW RATE[V/µs]

Vn, 1 kHz[nV/√Hz]

IO[mA] SHUTDOWN RAIL-RAIL

TLV246x(A) 2.7−6 150 550 1300 6.4 1.6 11 25 Y I/O

TLV277x(A) 2.5−5.5 360 1000 2 5.1 10.5 17 6 Y O

TLV247x(A) 2.7−6 250 600 2.5 2.8 1.5 15 20 Y I/O

TLV245x(A) 2.7−6 20 23 500 0.22 0.11 52 10 Y I/O

TLV225x(A) 2.7−8 200 35 1 0.2 0.12 19 3 — —

TLV226x(A) 2.7−8 300 200 1 0.71 0.55 12 3 — —

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications ofTexas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

!"#$%&'#! ( )*$$+!' &( #" ,*-.)&'#! /&'+0$#/*)'( )#!"#$% '# (,+)")&'#!( ,+$ '1+ '+$%( #" +&( !('$*%+!'(('&!/&$/ 2&$$&!'30 $#/*)'#! ,$#)+((!4 /#+( !#' !+)+((&$.3 !).*/+'+('!4 #" &.. ,&$&%+'+$(0

Copyright 1998−2004, Texas Instruments Incorporated

3

2

4

6

(TOP VIEW)

1OUT

GND

IN+

VDD+

IN−

TLV2460DBV PACKAGE

5 SHDN

! ,$#/*)'( )#%,.&!' '# 5 &.. ,&$&%+'+$( &$+ '+('+/*!.+(( #'1+$2(+ !#'+/0 ! &.. #'1+$ ,$#/*)'( ,$#/*)'#!,$#)+((!4 /#+( !#' !+)+((&$.3 !).*/+ '+('!4 #" &.. ,&$&%+'+$(0

Device TLV2465A is Obsolete


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TLV2460C/I/AI and TLV2461C/I/AI AVAILABLE OPTIONS

VIOmaxPACKAGED DEVICES

TAVIOmaxAT 25°C SMALL OUTLINE

(D)SOT-23†

(DBV) SYMBOLPLASTIC DIP

(P)

0°C to 70°C 2000 µVTLV2460CDTLV2461CD

TLV2460CDBVTLV2461CDBV

VAOCVAPC

TLV2460CPTLV2461CP

−40°C to 125°C

2000 µVTLV2460IDTLV2461ID

TLV2460IDBVTLV2461IDBV

VAOIVAPI

TLV2460IPTLV2461IP

−40°C to 125°C1500 µV

TLV2460AIDTLV2461AID

——

——

TLV2460AIPTLV2461AIP

† This package is available taped and reeled. To order this packaging option, add an R suffix to the part number (e.g., TLV2460CDR).‡ Chip forms are tested at TA = 25°C only.

TLV2460M/AM/Q/AQ and TLV2461M/AM/Q/AQ AVAILABLE OPTIONS

PACKAGED DEVICES

TAVIOmaxAT 25°C

SMALLOUTLINE†

(D)

SMALLOUTLINE†

(PW)

CERAMIC DIP(JG)

CERAMICFLATPACK

(U)

CHIP CARRIER(FK)

−40°C to 125°C

2000 µVTLV2460QDTLV2461QD

TLV2460QPWTLV2461QPW

——

——

——

−40°C to 125°C1500 µV

TLV2460AQDTLV2461AQD

TLV2460AQPWTLV2461AQPW

——

——

——

−55°C to 125°C2000 µV

——

——

TLV2460MJGTLV2461MJG

TLV2460MUTLV2461MU

TLV2460MFKTLV2461MFK

−55°C to 125°C1500 µV

——

——

TLV2460AMJGTLV2461AMJG

TLV2460AMUTLV2461AMU

TLV2460AMFKTLV2461AMFK

† This package is available taped and reeled. To order this packaging option, add an R suffix to the part number (e.g., TLV2460QDR).


PACKAGED DEVICES

TAVIOmaxAT 25°C

SMALL OUTLINE†

(D)

MSOP(DGK) SYMBOL

MSOP†

(DGS) SYMBOLPLASTIC DIP

(N)PLASTIC DIP

(P)


TLV2462CDGK—

xxTIAAI —TLV2463CDGS

—xxTIAAK

—TLV2463CN

TLV2462CP—

−40°C to2000 µV

TLV2462IDTLV2463ID

TLV2462IDGK—

xxTIAAJ —TLV2463IDGS

—xxTIAAL

—TLV2463IN

TLV2462IP—−40 C to

125°C1500 µV


——

——

——

——

—TLV2463AIN

TLV2462AIP—

† This package is available taped and reeled. To order this packaging option, add an R suffix to the part number (e.g., TLV2462CDR).‡ Chip forms are tested at TA = 25°C only.



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PACKAGED DEVICES

TAVIOmaxAT 25°C

SMALLOUTLINE†

(D)

SMALLOUTLINE†

(PW)

CERAMIC DIP(JG)

CERAMICDIP(J)

CERAMICFLATPACK

(U)

CHIP CAR-RIER(FK)

−40°C to 125°C



——

——

——

——

−40°C to 125°C1500 µV



——

——

——

——

−55°C to 125°C2000 µV

——

——

TLV2462MJG—

—TLV2463MJ

TLV2462MU TLV2462MFKTLV2463MFK

−55°C to 125°C1500 µV

——

——

TLV2462AMJG—

—TLV2463AMJ

TLV2462AMU TLV2462AMFKTLV2463AMFK

† This package is available taped and reeled. To order this packaging option, add an R suffix to the part number (e.g., TLV2462QDR).


VIOmaxPACKAGED DEVICES

TAVIOmaxAT 25°C SMALL OUTLINE

(D)PLASTIC DIP

(N)TSSOP

(PW)


TLV2464CNTLV2465CN

TLV2464CPWTLV2465CPW

−40°C to 125°C

2000 µVTLV2464IDTLV2465ID

TLV2464INTLV2465IN

TLV2464IPWTLV2465IPW

−40°C to 125°C1500 µV


TLV2464AINTLV2465AIN

TLV2464AIPWTLV2465AIPW

† This package is available taped and reeled. To order this packaging option, add an R suffix to the partnumber(e.g., TLV2464CDR).

‡ Chip forms are tested at TA = 25°C only.


PACKAGED DEVICES

TAVIOmaxAT 25°C

SMALLOUTLINE†

(D)

SMALLOUTLINE†

(PW)

CERAMIC DIP(J)

CHIP CARRIER(FK)

-40°C to 125°C



——

——

-40°C to 125°C1500 µV



——

——

−55°C to 125°C2000 µV

——

——

TLV2464MJTLV2465MJ

TLV2464MFKTLV2465MFK

−55°C to 125°C1500 µV

——

——

TLV2464AMJTLV2465AMJ

TLV2464AMFKTLV2465AMFK

† This package is available taped and reeled. To order this packaging option, add an R suffix to the part number(e.g., TLV2464QDR).



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TLV246x PACKAGE PINOUTS (1)

1

2

3

4

5

10

9

8

7

6

1OUT1IN−1IN+GND

1SHDN

VDD+2OUT2IN−2IN+2SHDN

3

2

4

5

(TOP VIEW)

1OUT

GND

IN+

VDD+

IN−

TLV2461DBV PACKAGE

3

2

4

6

(TOP VIEW)

1OUT

GND

IN+

VDD+

IN−

TLV2460DBV PACKAGE

5 SHDN

TLV2463DGS PACKAGE

(TOP VIEW)

NC − No internal connection(1) SOT−23 may or may not be indicated

1

2

3

4

5

6

7

14

13

12

11

10

9

8

1OUT1IN−1IN+GND

NC1SHDN

NC

VDD+2OUT2IN−2IN+NC2SHDNNC

(TOP VIEW)

TLV2463D, N, J, OR PW PACKAGE

1

2

3

4

5

6

7

14

13

12

11

10

9

8

1OUT1IN−1IN+

VDD+2IN+2IN−

2OUT

4OUT4IN−4IN+GND3IN+3IN−3OUT

(TOP VIEW)

TLV2464D, N, PWP, J, OR PW PACKAGE

1

2

3

4

5

6

7

8

16

15

14

13

12

11

10

9

1OUT1IN−1IN+

VDD+2IN+2IN−

2OUT1/2SHDN

4OUT4IN−4IN+GND3IN+3IN−3OUT3/4SHDN

(TOP VIEW)

TLV2465D, N, PWP, J, OR PW PACKAGE

1

2

3

4

8

7

6

5

1OUT1IN−1IN+GND

VDD+2OUT2IN−2IN+

TLV2462D, DGK, P, JG, OR PW PACKAGE

(TOP VIEW)

1

2

3

4

8

7

6

5

NCIN−IN+

GND

SHDNVDD+OUTNC

TLV2460D, P, JG, OR PW PACKAGE

(TOP VIEW)

1

2

3

4

8

7

6

5

NCIN−IN+

GND

NCVDD+OUTNC

TLV2461D, P, JG, OR PW PACKAGE

(TOP VIEW)

TYPICAL PIN 1 INDICATORS

Printed orMolded Dot Bevel Edges

Pin 1

Molded ”U” Shape

Pin 1

StripePin 1 Pin 1



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TLV246x PACKAGE PINOUTS (continued) (1)

1

2

3

4

5

10

9

8

7

6

NCNCIN−IN+

GND

NCSHDNVDDOUTPUTNC

TLV2460U PACKAGE(TOP VIEW)

1

2

3

4

5

10

9

8

7

6

NC1OUT

1IN−1IN+GND

NCVDD+2OUT2IN−2IN+


1

2

3

4

5

10

9

8

7

6

NCNCIN−IN+

GND

NCNCVDDOUTPUTNC


192013 2

17

18

16

15

14

1312119 10

5

4

6

7

8

NC

VDD

NC

OUT

NC

NC

IN−

NC

IN+

NC

NC

NC

NC

SH

DN

NC

GN

D

NC

NC

NC

NC

TLV2460FK PACKAGE(TOP VIEW)

192013 2

17

18

16

15

14

1312119 10

5

4

6

7

8

NC

VDD

NC

OUT

NC

NC

IN−

NC

IN+

NC

NC

NC

NC

NC

NC

GN

D

NC

NC

NC

NC


192013 2

17

18

16

15

14

1312119 10

5

4

6

7

8

2IN−

NC

2IN+

NC

NC

1IN+

NC

GND

NC

NC

1IN

−

1OU

T

NC

V 2OU

T

NC

NC

NC

NC

NC


DD

192013 2

17

18

16

15

14

1312119 10

5

4

6

7

8

2IN−

NC

2IN+

NC

NC

1IN+

NC

GND

NC

NC

1IN

−

1OU

T

NC

V 2OU

T

NC

NC

NC

2SH

DN

1SH

DN


DD


192013 2

17

18

16

15

14

1312119 10

5

4

6

7

8

4IN+

NC

GND

NC

3IN+

1IN+

NC

VDD+

NC

2IN+

1IN

−

1OU

T

NC

4OU

T

4IN

−

2OU

T

NC

3OU

T

3IN

−

2IN

−

192013 2

17

18

16

15

14

1312119 10

5

4

6

7

8

4IN+

GND

NC

3IN+

3IN−

1IN+

VDD+

NC

2IN+

2IN−

1IN

−

1OU

T

NC

4OU

T

4IN

−

1/2S

HD

N

NC

3/4S

HD

N

3OU

T

2OU

TTLV2465

FK PACKAGE(TOP VIEW)

NC − No internal connection(1) SOT−23 may or may not be indicated



6 WWW.TI.COM

absolute maximum ratings over operating free-air temperature range (unless otherwise noted) †

Supply voltage, VDD (see Note 1) 6 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Differential input voltage, VID − 0.2 V to VDD + 0.2 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input current, II (any input) ± 200 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output current, IO ± 175 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total input current, II (into VDD+) 175 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total output current, IO (out of GND) 175 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous total power dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating free-air temperature range, TA: C suffix 0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

I and Q suffix −40°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M suffix −55°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Maximum junction temperature, TJ 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage temperature range, Tstg −65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, andfunctional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is notimplied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTE 1: All voltage values, except differential voltages, are with respect to GND.

DISSIPATION RATING TABLE FOR C and I SUFFIX

PACKAGEθJC θJA TA ≤ 25°C TA < 125°C

PACKAGEθJC

(°C/W)

θJA(°C/W)

TA ≤ 25 CPOWER RATING

TA < 125 CPOWER RATING

D (8) 38.3 176 710 mW 142 mW

D (14) 26.9 122.6 1022 mW 204.4 mW

D (16) 25.7 114.7 1090 mW 218 mW

DBV (5) 55 324.1 385 mW 77.1 mW

DBV (6) 55 294.3 425 mW 84.9 mW

DGK 54.2 259.9 481 mW 96.2 mW

DGS 54.1 257.7 485 mW 97 mW

N (14, 16) 32 78 1600 mW 320.5 mW

P (8) 41 104 1200 mW 240.4 mW

PW (14) 29.3 173.6 720 mW 144 mW

PW (16) 28.7 161.4 774 mW 154.9 mW

NOTE: Thermal resistances are not production tested and are for informationalpurposes only.

DISSIPATION RATING TABLE FOR Q and M SUFFIX

PACKAGETA ≤ 25°C DERATING FACTOR

‡TA = 70°C TA = 85°C TA = 125°C

PACKAGETA ≤ 25 C

POWER RATINGDERATING FACTORABOVE TA = 25°C‡

TA = 70 CPOWER RATING



FK 1375 mW 11.0 mW/°C 880 mW 715 mW 275 mW

JG 1050 mW 8.4 mW/°C 672 mW 546 mW 210 mW

U 675 mW 5.4 mW/°C 432 mW 350 mW 135 mW‡ This is the inverse of the traditional junction-to-ambient thermal resistance (RΘJA). Thermal resistances are not production tested and are for

informational purposes only.



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recommended operating conditions

MIN MAX UNIT

Supply voltage, VDDSingle supply 2.7 6

VSupply voltage, VDD Split supply ±1.35 ±3V

Common-mode input voltage range, VICR 0 VDD V

C-suffix 0 70

Operating free-air temperature, TA I-suffix and Q-suffix −40 125 °COperating free-air temperature, TAM-suffix −55 125

C

Shutdown on/off voltage level‡VIH 2

VShutdown on/off voltage level‡VIL 0.7

V

‡ Relative to voltage on the GND terminal of the device.

electrical characteristics at specified free-air temperature, V DD = 3 V (unless otherwise noted)

PARAMETER TEST CONDITIONS TA† MIN TYP MAX UNIT

V = 3 V,25°C 500 2000

VIO Input offset voltageVDD = 3 V,VIC = 1.5 V,

Full range 2200VVIO Input offset voltage

DDVIC = 1.5 V, VO = 1.5 V, TLV246xA

25°C 500 1500µV

VO = 1.5 V,RS = 50 Ω

TLV246xAFull range 1700

αVIO Temperature coefficient of input offset voltageRS = 50 Ω

2 µV/°C

25°C 2.8 7

IIO Input offset current VDD = 3 V, TLV246xC Full range 20 nAIIO Input offset current VDD = 3 V,VIC = 1.5 V, TLV246xI/Q/M Full range 75

nA

VIC = 1.5 V, VO = 1.5 V,R = 50

25°C 4.4 14

IIB Input bias current

VO = 1.5 V,RS = 50 Ω TLV246xC Full range 25 nAIIB Input bias current

TLV246xI/Q/M Full range 75

nA

IOH = −2.5 mA25°C 2.9

VOH High-level output voltage

IOH = −2.5 mAFull range 2.8

VVOH High-level output voltage

IOH = −10 mA25°C 2.7

V

IOH = −10 mAFull range 2.5

VIC = 1.5 V, IOL = 2.5 mA25°C 0.1

VOL Low-level output voltage

VIC = 1.5 V, IOL = 2.5 mAFull range 0.2

VVOL Low-level output voltage

VIC = 1.5 V, IOL = 10 mA25°C 0.3

V

VIC = 1.5 V, IOL = 10 mAFull range 0.5

Sourcing25°C 50

IOS Short-circuit output current

SourcingFull range 20

mAIOS Short-circuit output current

Sinking25°C 40

mA

SinkingFull range 20

IO Output current Measured 1 V from rail 25°C ±40 mA

AVDLarge-signal differential voltage

RL = 10 kΩ VO(PP) = 1 V25°C 90 105

dBAVDLarge-signal differential voltageamplification RL = 10 kΩ, VO(PP) = 1 V

Full range 89dB

ri(d) Differential input resistance 25°C 109 Ω† Full range is 0°C to 70°C for the C suffix, −40°C to 125°C for the I and Q suffixes, and −55°C to 125°C for the M suffix.



8 WWW.TI.COM

electrical characteristics at specified free-air temperature, V DD = 3 V (unless otherwise noted)(continued)


ci(c)Common-mode inputcapacitance

f = 10 kHz 25°C 7 pF

zo Closed-loop output impedance f = 100 kHz, AV = 10 25°C 33 Ω

VICR = 0 to 3 V,25°C 66 80

CMRR Common-mode rejection ratioVICR = 0 to 3 V,RS = 50 Ω TLV246xC Full range 64 dBCMRR Common-mode rejection ratio RS = 50 Ω


dB

VDD = 2.7 V to 6 V, VIC = VDD/2, 25°C 80 85

kSVRSupply voltage rejection ratio

VDD = 2.7 V to 6 V,No load

VIC = VDD/2,

Full range 75dBkSVR

Supply voltage rejection ratio(∆VDD /∆VIO) VDD = 3 V to 5 V, VIC = VDD/2, 25°C 85 95

dB( VDD / VIO) VDD = 3 V to 5 V,No load

VIC = VDD/2,

Full range 80

IDD Supply current (per channels) VO = 1.5 V, No load25°C 0.5 0.575

mAIDD Supply current (per channels) VO = 1.5 V, No loadFull range 0.9

mA

IDD(SHDN)Supply current in shutdown SHDN < 0.7 V, 25°C 0.3

AIDD(SHDN)Supply current in shutdown(TLV2460, TLV2463, TLV2465)

SHDN < 0.7 V,Per channel in shutdown Full range 2.5

µA

† Full range is 0°C to 70°C for the C suffix, −40°C to 125°C for the I and Q suffixes, and −55°C to 125°C for the M suffix.

operating characteristics at specified free-air temperature, V DD = 3 V (unless otherwise noted)


VO(PP) = 0.8 V, CL = 160 pF,25°C 0.9 1.6

SR Slew rate at unity gainVO(PP) = 0.8 V,RL = 10 kΩ

CL = 160 pF,Full

range0.8

V/µs

Vn Equivalent input noise voltagef = 100 Hz 25°C 16

nV/√HzVn Equivalent input noise voltagef = 1 kHz 25°C 11

nV/√Hz

In Equivalent input noise current f = 1 kHz 25°C 0.13 pA/√Hz

Total harmonic distortion plus VO(PP) = 2 V, AV = 1 0.006%

THD + NTotal harmonic distortion plusnoise

VO(PP) = 2 V, RL = 10 kΩ, f = 1 kHz

AV = 10 25°C 0.02%THD + N noise RL = 10 kΩ, f = 1 kHzAV = 100

25 C

0.08%

Both channels 7.6

t(on) Amplifier turnon time AV = 1, RL = 10 kΩ Channel 1 only,Channel 2 on

25°C7.65

µs

Both channels 333

t(off) Amplifier turnoff time AV = 1, RL = 10 kΩChannel 1 only,Channel 2 on 25°C

328nst(off) Amplifier turnoff time AV = 1, RL = 10 kΩ

Channel 2 only,Channel 1 on

25 C

329

ns

Gain-bandwidth product f = 10 kHz, CL = 160 pFRL = 10 kΩ, 25°C 5.2 MHz

V(STEP)PP = 2 V,AV = −1, CL = 10 pF,

0.1% 1.47

ts Settling time

(STEP)PPAV = −1, CL = 10 pF,RL = 10 kΩ 0.01%

25°C1.78

sts Settling timeV(STEP)PP = 2 V,AV = −1, CL = 56 pF,

0.1%25°C

1.77µs

(STEP)PPAV = −1, CL = 56 pF,RL = 10 kΩ 0.01% 1.98

φm Phase margin at unity gainRL = 10 kΩ, CL = 160 pF

25°C 44°

Gain marginRL = 10 kΩ, CL = 160 pF

25°C 7 dB† Full range is 0°C to 70°C for the C suffix, −40°C to 125°C for the I and Q suffixes, and −55°C to 125°C for the M suffix.



9WWW.TI.COM

electrical characteristics at specified free-air temperature, V DD = 5 V (unless otherwise noted)


25°C 500 2000

VIO Input offset voltageVDD = 5 V, Full range 2200

VVIO Input offset voltageVDD = 5 V,VIC = 2.5,

TLV246xA25°C 500 1500

µVVIC = 2.5, VO = 2.5 V,RS = 50 Ω

TLV246xAFull range 1700

VIOTemperature coefficient of input off-

ORS = 50 Ω

25°C 2 V/°CαVIOTemperature coefficient of input off-set voltage 25°C 2 µV/°C

25°C 0.3 7

IIO Input offset current VDD = 5 V, TLV246xC Full range 15 nAIIO Input offset current VDD = 5 V,VIC = 2.5 V, TLV246xI/Q/M Full range 60

nA

VIC = 2.5 V, VO = 2.5 V,R = 50

25°C 1.3 14

IIB Input bias current

VO = 2.5 V,RS = 50 Ω TLV246xC Full range 30 nAIIB Input bias current


nA

IOH = −2.5 mA25°C 4.9

VOH High-level output voltage

IOH = −2.5 mAFull range 4.8

VVOH High-level output voltage

IOH = −10 mA25°C 4.8

V

IOH = −10 mAFull range 4.7

VIC = 2.5 V, IOL = 2.5 mA25°C 0.1

VOL Low-level output voltage

VIC = 2.5 V, IOL = 2.5 mAFull range 0.2

VVOL Low-level output voltage

VIC = 2.5 V, IOL = 10 mA25°C 0.2

V

VIC = 2.5 V, IOL = 10 mAFull range 0.3

Sourcing25°C 145

IOS Short-circuit output current

SourcingFull range 60

mAIOS Short-circuit output current

Sinking25°C 100

mA

SinkingFull range 60

IO Output current Measured at 1 V from rail 25°C ±80 mA

AVDLarge-signal differential voltage VIC = 2.5 V, RL = 10 kΩ, 25°C 92 109

dBAVDLarge-signal differential voltage amplification

VIC = 2.5 V,VO = 1 V to 4 V

RL = 10 kΩ,Full range 90

dB

ri(d) Differential input resistance 25°C 109 Ω

ci(c) Common-mode input capacitance f = 10 kHz 25°C 7 pF

zo Closed-loop output impedance f = 100 kHz, AV = 10 25°C 29 Ω

VICR = 0 V to 5 V,25°C 71 85

CMRR Common-mode rejection ratioVICR = 0 V to 5 V,RS = 50 Ω TLV246xC Full range 69 dBCMRR Common-mode rejection ratio RS = 50 Ω


dB

VDD = 2.7 V to 6 V, VIC = VDD/2, 25°C 80 85dB

kSVRSupply voltage rejection ratio

VDD = 2.7 V to 6 V,No load

VIC = VDD/2,

Full range 75dB

kSVRSupply voltage rejection ratio(∆VDD /∆VIO) VDD = 3 V to 5 V, VIC = VDD/2, 25°C 85 95

dB( VDD / VIO) VDD = 3 V to 5 V,

No loadVIC = VDD/2,

Full range 80dB

IDD Supply current (per channel) VO = 2.5 V, No load,25°C 0.55 0.65

mAIDD Supply current (per channel) VO = 2.5 V, No load,Full range 1

mA

IDD(SHDN)Supply current in shutdown SHDN < 0.7 V, Per channels in 25°C 1

AIDD(SHDN)Supply current in shutdown(TLV2460, TLV2463, TLV2465)

SHDN < 0.7 V, Per channels inshutdown Full range 3

µA




10 WWW.TI.COM

operating characteristics at specified free-air temperature, V DD = 5 V (unless otherwise noted)


VO(PP) = 2 V, CL = 160 pF,25°C 0.9 1.6

SR Slew rate at unity gainVO(PP) = 2 V,RL = 10 kΩ

CL = 160 pF,Full

range0.8

V/µs

Vn Equivalent input noise voltagef = 100 Hz 25°C 14

nV/√HzVn Equivalent input noise voltagef = 1 kHz 25°C 11

nV/√Hz

In Equivalent input noise current f = 100 Hz 25°C 0.13 pA/√Hz

VO(PP) = 4 V, AV = 1 0.004%

THD + N Total harmonic distortion plus noiseVO(PP) = 4 V,RL = 10 kΩ,f = 10 kHz

AV = 10 25°C 0.01%THD + N Total harmonic distortion plus noise RL = 10 kΩ,f = 10 kHz AV = 100

25 C

0.04%

Both channels 7.6

t(on) Amplifier turnon time AV = 1, RL = 10 kΩChannel 1 only,Channel 2 on 25°C

7.65µst(on) Amplifier turnon time AV = 1, RL = 10 kΩ


25 C

7.25

µs

Both channels 333

t(off) Amplifier turnoff time AV = 1, RL = 10 kΩChannel 1 only,Channel 2 on 25°C

328nst(off) Amplifier turnoff time AV = 1, RL = 10 kΩ


25 C

329

ns

Gain-bandwidth product f = 10 kHz, CL = 160 pF

RL = 10 kΩ, 25°C 6.4 MHz

V(STEP)PP = 2 V,AV = −1,

0.1% 1.53

ts Settling time

AV = −1,CL = 10 pF,RL = 10 kΩ 0.01%

25°C1.83

sts Settling timeV(STEP)PP = 2 V,AV = −1,

0.1%25°C

3.13µs

AV = −1,CL = 56 pF,RL = 10 kΩ 0.01% 3.33

φm Phase margin at unity gainRL = 10 kΩ, CL = 160 pF

25°C 45°

Gain marginRL = 10 kΩ, CL = 160 pF

25°C 7 dB




11WWW.TI.COM

TYPICAL CHARACTERISTICS

Table of GraphsFIGURE

VIO Input offset voltage vs Common-mode input voltage 1, 2

IIB Input bias current vs Free-air temperature 3, 4

IIO Input offset current vs Free-air temperature 3, 4

VOH High-level output voltage vs High-level output current 5, 6

VOL Low-level output voltage vs Low-level output current 7, 8

VO(PP) Peak-to-peak output voltage vs Frequency 9, 10

Open-loop gain vs Frequency 11, 12

Phase vs Frequency 11, 12

AVD Differential voltage amplification vs Load resistance 13

Capacitive load vs Load resistance 14

Zo Output impedance vs Frequency 15, 16

CMRR Common-mode rejection ratio vs Frequency 17

kSVR Supply-voltage rejection ratio vs Frequency 18, 19

IDD Supply currentvs Supply voltage 20

IDD Supply currentvs Free-air temperature 21

Amplifier turnon characteristics 22

Amplifier turnoff characteristics 23

Supply current turnon 24

Supply current turnoff 25

Shutdown supply current vs Free-air temperature 26

SR Slew rate vs Supply voltage 27

Vn Equivalent input noise voltagevs Frequency 28, 29

Vn Equivalent input noise voltagevs Common-mode input voltage 30, 31

THD Total harmonic distortion vs Frequency 32, 33

THD+N Total harmonic distortion plus noise vs Peak-to-peak signal amplitude 34, 35

vs Frequency 11, 12

φm Phase margin vs Load capacitance 36φm Phase margin

vs Free-air temperature 37

Gain bandwidth productvs Supply voltage 38

Gain bandwidth productvs Free-air temperature 39

Large signal follower 40, 41

Small signal follower 42, 43

Inverting large signal 44, 45

Inverting small signal 46, 47



12 WWW.TI.COM


Figure 1

−0.2

−0.6

−1

0

−0.4

−0.8

1

VICR − Common-Mode Input Voltage − V

INPUT OFFSET VOLTAGEvs

COMMON-MODE INPUT VOLTAGE

10.5 1.5 30 2 2.5

VDD = 3 VTA = 25°C

− In

put O

ffset

Vol

tage

− m

VV

IO

0.8

0.4

0.6

0.2

Figure 2

−0.2

−0.6

−1

0

−0.4

−0.8

1


INPUT OFFSET VOLTAGEvs


21 3 50 4

VDD = 5 VTA = 25°C

− In

put O

ffset

Vol

tage

− m

VV I

O

0.8

0.4

0.6

0.2

Figure 3

TA − Free-Air Temperature − ° C

INPUT BIAS AND INPUT OFFSET CURRENTvs

FREE-AIR TEMPERATURE

2.5

1.5

0.5

−0.5−35 5

3

2

1

0

−15 25 125

4.5

−55 45 65

3.5

4

85 105

VDD = 3 VVI = 1.5 V

I IB

and

IIO

− In

put B

ias

and

Inpu

t Offs

et C

urre

nt −

nA

5

IIB

IIO

Figure 4


INPUT BIAS AND INPUT OFFSET CURRENTvs


−1−35 5

3

2

1

0

−15 25 125−55 45 65

4

85 105I IB

and

IIO

− In

put B

ias

and

Inpu

t Offs

et C

urre

nt −

nA

5

IIB

IIO

VDD = 5 VVI = 2.5 V

6



13WWW.TI.COM


Figure 5

TA = 125°CTA = 85°C

HIGH-LEVEL OUTPUT VOLTAGEvs

HIGH-LEVEL OUTPUT CURRENT

0 10 20 30 60

IOH − High-Level Output Current − mA

5040 70 80

2.5

1

0

2

1.5

0.5

3

VO

H−

Hig

h-Le

vel O

utpu

t Vol

tage

− V

VDD = 3 VDC

TA = −55°C

TA = 25°C

TA = −40°C

Figure 6

TA = 125°CTA = 85°C

HIGH-LEVEL OUTPUT VOLTAGEvs

HIGH-LEVEL OUTPUT CURRENT

0 20 40 60 120

IOH − High-Level Output Current − mA

10080 140 200

2.5

1

0

2

1.5

0.5

3

VO

H−

Hig

h-Le

vel O

utpu

t Vol

tage

− V

VDD = 5 VDC

TA = −55°C4

5

4.5

3.5

160 180

TA = 25°C

TA = −40°C

Figure 7

LOW-LEVEL OUTPUT VOLTAGEvs

LOW-LEVEL OUTPUT CURRENT

0 10 20 30 60

IOL − Low-Level Output Current − mA

5040 70

2.5

1

0

2

1.5

0.5

3VDD = 3 VDC

TA = −55°C

OL

V−

Low

-Lev

el O

utpu

t Vol

tage

− V

TA = 85°CTA = 125°C

TA = 25°C

TA = −40°C

Figure 8

LOW-LEVEL OUTPUT VOLTAGEvs

LOW-LEVEL OUTPUT CURRENT

0 20 40 60 120

IOL − Low-Level Output Current − mA

10080 140

2.5

1

0

2

1.5

0.5

3

VDD = 5 VDC

4.5

4

3.5

160

OL

V−

Low

-Lev

el O

utpu

t Vol

tage

− V

TA = −55°C

TA = 85°CTA = 125°C

TA = 25°C

TA = −40°C



14 WWW.TI.COM


Figure 9

PEAK-TO-PEAK OUTPUT VOLTAGEvs

FREQUENCY

10k 100k 10M

f − Frequency − Hz

1M

3

2

1

0

2.5

1.5

0.5

VO

(PP

)−

Pea

k-to

-Pea

k O

utpu

t Vol

tage

− V

VDD = 3 VAV = −10THD = 1%RL = 10 kΩ

Figure 10

PEAK-TO-PEAK OUTPUT VOLTAGEvs

FREQUENCY

10k 100k 10M


1M

3

2

1

0

2.5

1.5

0.5VO

(PP

)−

Pea

k-to

-Pea

k O

utpu

t Vol

tage

− V

VDD = 5 VAV = −10THD = 1%RL = 10 kΩ

3.5

5

4

5.5

4.5

OPEN-LOOP GAIN AND PHASEvs

FREQUENCY

40

20

0

−20100 10k


50

30

10

−10

1k 100k 1M

60

80

10

70

90

−140°

−200°

−120°

−100°

−80°

100

−60°

−40°

−20°

0°

20°

40°

−180°

−160°

Ope

n-Lo

op G

ain

− dB

Pha

se

10M

AVD

Phase

VDD = ±1.5 VRL = 10 kΩCL = 0 TA = 25°C

Figure 11



15WWW.TI.COM


OPEN-LOOP GAIN AND PHASEvs

FREQUENCY

40

20

0

−20100 10k


50

30

10

−10

1k 100k 1M

60

80

10

70

90

−140°

−200°

−120°

−100°

−80°

100

−60°

−40°

−20°

0°

20°

40°

−180°

−160°

Ope

n-Lo

op G

ain

− dB

Pha

se

10M

AVD

Phase

VDD = ±2.5 VRL = 10 kΩCL = 0TA = 25°C

Figure 12

Figure 13

RL − Load Resistance − Ω

DIFFERENTIAL VOLTAGE AMPLIFICATIONvs

LOAD RESISTANCE

120

80

40

0

140

100

60

20

1k 10k 1M

180

100 100k

160TA = 25°C

− D

iffer

entia

l Vol

tage

Am

plifi

catio

n −

V/m

VA

VD

VDD = ±2.5 V

VDD = ±1.5 V

Figure 14

CL

− C

apac

itive

Loa

d −

pF

CAPACITIVE LOADvs

LOAD RESISTANCE

10 100 10k

RL − Load Resistance − Ω1k

10000

100

1000

Phase Margin > 30°

VDD = 5 VPhase Margin = 30°TA = 25°C

Phase Margin < 30°



16 WWW.TI.COM


Figure 15

OUTPUT IMPEDANCEvs

FREQUENCY


1

0.1

0.01

10

1000

AV = 100

100 1k 10k 10M1M100k

− O

utpu

t Im

peda

nce

−Z o

Ω

100

VDD = ±1.5 VTA = 25°C

AV = 10

AV = 1

Figure 16

OUTPUT IMPEDANCEvs

FREQUENCY


1

0.1

0.01

10

1000

AV = 100

100 1k 10k 10M1M100k

− O

utpu

t Im

peda

nce

−Z o

Ω

100

VDD = ±2.5 VTA = 25°C

AV = 10

AV = 1

CM

RR

− C

omm

on-M

ode

Rej

ectio

n R

atio

− d

B

COMMON-MODE REJECTION RATIOvs

FREQUENCY


10 1k 10k 10M1M100k

90

80

70

60

85

75

65

VDD = 5 VVIC = 2.5 V

100

VDD = 3 VVIC = 1.5 V

Figure 17



17WWW.TI.COM


Figure 18

SUPPLY-VOLTAGE REJECTION RATIOvs

FREQUENCY


10 1k 10k 10M1M100k

110

80

60

40

90

70

50

100

100

VDD = ±1.5 VTA = 25°C

kS

VR

− S

uppl

y Vo

ltage

Rej

ectio

n R

atio

− d

B

−kSVR

+kSVR

+kSVR

−kSVR

Figure 19

SUPPLY-VOLTAGE REJECTION RATIOvs

FREQUENCY


10 1k 10k 10M1M100k

80

60

40

90

70

50

100

VDD = ±2.5 VTA = 25°C

kS

VR

− S

uppl

y Vo

ltage

Rej

ectio

n R

atio

− d

B

−kSVR

+kSVR

+kSVR

−kSVR

Figure 20

VDD − Supply Voltage − V

SUPPLY CURRENTvs

SUPPLY VOLTAGE

0.7

0.5

0.30

0.103 4

0.8

0.6

0.40

0.20

3.5 4.5 62.5 5 5.5

IDD = 25°C

I DD

− S

uppl

y C

urre

nt −

mA

IDD = 85°C

IDD = −55°C

IDD = 125°C

IDD = −40°C

Figure 21


SUPPLY CURRENTvs


0.60

0.50

0.40

0.30−35 5

0.65

0.55

0.45

0.35

−15 25 125

0.80

−55 45 65

0.70

0.75

VDD = 5 VVI = 2.5 V

85 105

I DD

− S

uppl

y C

urre

nt −

mA

VDD = 3 VVI = 1.5 V



18 WWW.TI.COM


Figure 22t − Time − µs

AMPLIFIER WITH A SHUTDOWN PULSETURNON CHARACTERISTICS

2

0

2

0−3 1

1

3

1

−1 3 9

5

−5

V

5 7

SD

− S

hutd

own

Volta

ge −

V

3

11

4

VDD = 5 VRL = 10 kΩAV = 1TA = 25°C

Shutdown Pin

Amplifier Output

Figure 23t − Time − µ s

AMPLIFIER WITH A SHUTDOWN PULSETURNOFF CHARACTERISTICS

2

0

2

0−3 1

1

3

1

−1 3

5

−5

V

5 7

SD

− S

hutd

own

Volta

ge −

V

3

4VDD = 5 VRL = 10 kΩAV = 1TA = 25°C

Shutdown Pin

Amplifier Output

VDD = 5 VVI = 2.5 VAV = 1TA = 25°C

0.4

−0.2

0.2

0

−0.4 −0.2 0 0.6

t − Time − µ s

0.40.2

SUPPLY CURRENT WITH A SHUTDOWN PULSETURNON CHARACTERISTICS

0.8

1

0.6

Supply Current

Shutdown Pin

I DD

− S

uppl

y C

urre

nt −

mA

4.5

5.5

2.5

3.5

0.5

1.5

−0.5

VS

D−

Shu

tdow

n Vo

ltage

− V

Figure 24



19WWW.TI.COM


VDD = 5 VVI = 2.5 VAV = 1TA = 25°C

0.4

−0.2

0.2

0

−0.4 −0.2 0 0.6

t − Time − µ s

0.40.2

TURNOFF SUPPLY CURRENTWITH A SHUTDOWN PULSE

0.8

1

0.6

Supply Current

Shutdown Pin

I DD

− S

uppl

y C

urre

nt −

mA

4.5

5.5

2.5

3.5

0.5

1.5

−0.5

VS

D−

Shu

tdow

n Vo

ltage

− V

Figure 25

Figure 26


SHUTDOWN SUPPLY CURRENTvs


2.5

1.5

0.5

−0.5

−35 5

3

2

1

0

−15 25 125−55 45 65 85 105

VDD = 5 VVI = 2.5 V

−1

DD

IS

hutd

own

Sup

ply

Cur

rent

−

−A

µ

VDD = 3 VVI = 1.5 V

Figure 27


SLEW RATEvs

SUPPLY VOLTAGE

2.5 3 3.5 4 5.5 654.5

1.6

1.5

1.4

1.3

1.55

1.45

1.35

1.8

1.7

1.75

1.65

SR

− S

lew

Rat

e −

V/

µs

VO(PP) = 2 VCL = 160 pFAV = 1RL = 10 kΩTA = 25°C

SR+

SR−



20 WWW.TI.COM


Figure 28

EQUIVALENT INPUT NOISE VOLTAGEvs

FREQUENCY

100 1k 100k


10k10

14

12

15

13

11

17

18

16

nV/

Hz

− E

quiv

alen

t Inp

ut N

oise

Vol

tage

−V n

VDD = 3 VAV = 10VI = 1.5 VTA = 25°C

Figure 29


FREQUENCY

100 1k 100k


10k10

14

12

15

13

11

17

18

16

nV/

Hz

− E

quiv

alen

t Inp

ut N

oise

Vol

tage

−V n

VDD = 5 VAV = 10VI = 2.5 VTA = 25°C

Figure 30




12

101

14

13

11

0.5 1.5 3

20

0 2 2.5

15

VDD = 3 VAV = 10f = 1 kHzTA = 25°C

nV/

Hz

− E

quiv

alen

t Inp

ut N

oise

Vol

tage

−V n

Figure 31




12

102

14

13

11

1 3

20

0 4 5

15

VDD = 5 VAV = 10f = 1 kHzTA = 25°C

nV/

Hz

− E

quiv

alen

t Inp

ut N

oise

Vol

tage

−V

n



21WWW.TI.COM


Figure 32

TOTAL HARMONIC DISTORTIONvs

FREQUENCY

0.010

0.001100 10k


1k 100k10

0.1

TH

D −

Tot

al H

arm

onic

Dis

tort

ion

− %

VDD = ±1.5 VVO(PP) = 2 VRL = 10 kΩ

AV = 1

AV = 10

AV = 100

0.5

Figure 33

TOTAL HARMONIC DISTORTIONvs

FREQUENCY

0.010

0.001100 10k


1k 100k10

0.1

TH

D −

Tot

al H

arm

onic

Dis

tort

ion

− %

VDD = ±2.5 VVO(PP) = 4 VRL = 10 kΩ

AV = 1

AV = 10

AV = 100

1

Figure 34

TOTAL HARMONIC DISTORTION PLUS NOISEvs

PEAK-TO-PEAK SIGNAL AMPLITUDE

0.010

0.001

0.1

TH

D+N

− T

otal

Har

mon

ic D

isto

rtio

n +

Noi

se −

%

VDD = 3 VAV = 1TA = 25°C

1

RL = 10 kΩ

RL = 2 kΩ

RL = 250 Ω

RL = 100 kΩ

Peak-to-Peak Signal Amplitude − V

1 1.2 1.4 1.6 2.2 2.421.8 2.6 2.8 3 3.2

Figure 35

TOTAL HARMONIC DISTORTION PLUS NOISEvs

PEAK-TO-PEAK SIGNAL AMPLITUDE

0.010

0.001

0.1

TH

D+N

− T

otal

Har

mon

ic D

isto

rtio

n +

Noi

se −

%

VDD = 5 VAV = 1TA = 25°C

1

RL = 10 kΩ

RL = 250 Ω

RL = 100 kΩ

Peak-to-Peak Signal Amplitude − V

4 4.1 4.2 4.3 4.6 4.74.54.4 4.8 4.9 5

RL = 2 kΩ



22 WWW.TI.COM


Figure 36

CL − Load Capacitance − pF

PHASE MARGINvs

LOAD CAPACITANCE

60

40

20

0

70

50

30

10

100 1k 100k

90

10 10k

80

mφ

− P

hase

Mar

gin

− de

gree

s

VDD = ±2.5 VTA = 25°CRL = 10 kΩ

Rnull = 50 Ω

Rnull = 20 Ω

Rnull = 0 Ω

Figure 37


PHASE MARGINvs


60

50

40

30−35 5

55

45

35

−15 25 125−55 45 65

RL = 10 kΩCL = 160 pF

85 105

VDD = ±2.5 V

VDD = ±1.5 V

mφ

− P

hase

Mar

gin

− de

gree

s

Figure 38


GAIN BANDWIDTH PRODUCTvs

SUPPLY VOLTAGE

2.5 3 3.5 4 5.5 654.5

5

4.5

4

3.5

4.75

4.25

3.75

Gai

n B

andw

idth

Pro

duct

− M

Hz

CL = 160 pFRL = 10 kΩf = 10 kHzTA = 25°C

Figure 39


GAIN BANDWIDTH PRODUCTvs


4.5

4

3.5

3−35 5

4.25

3.75

3.25

−15 25 125−55 45 65

RL = 10 kΩCL = 160 pF

85 105

VDD = ±2.5 V

VDD = ±1.5 V

5

4.75

Gai

n B

andw

idth

Pro

duct

− M

Hz



23WWW.TI.COM


Figure 40

VO

− Vo

ltage

− V

1.4

0.8

1.2

1

−2 0 2 4 10

t − Time − µs

86 12 14

LARGE SIGNAL FOLLOWER2.2

1.8

2

1.6

Input

Output

16 18

Output

InputVDD = 3 VVI(PP) = 1 VVI = 1.5 VRL = 10 kΩCL = 160 pFAV = 1TA = 25°C

Figure 41

VO

− Vo

ltage

− V

2.1

1.7

1.3−2 0 2 4 10

t − Time − µ s

86 12 14

LARGE SIGNAL FOLLOWER3.7

2.9

3.3

2.5

Input

Output

16 18

Output

InputVDD = 5 VVI(PP) = 2 VVI = 2.5 VRL = 10 kΩCL = 160 pFAV = 1TA = 25°C

Figure 42

VO

− Vo

ltage

− V

1.5

1.4

1.45

−0.2 0 0.2 0.4 1

t − Time − µ s

0.80.6 1.2 1.4

SMALL SIGNAL FOLLOWER1.6

1.55

Input

Output

1.6 1.8

VDD = 3 VVI(PP) = 100 mVVI = 1.5 VRL = 10 kΩ

CL = 160 pFAV = 1TA = 25°C

Figure 43

VO

− Vo

ltage

− V

2.5

2.4

2.45

−0.2 0 0.2 0.4 1

t − Time − µ s

0.80.6 1.2 1.4

SMALL SIGNAL FOLLOWER2.6

2.55

Input

Output

1.6 1.8

VDD = 5 VVI(PP) = 100 mVVI = 2.5 VRL = 10 kΩ

CL = 160 pFAV = 1TA = 25°C



24 WWW.TI.COM


Figure 44

VO

− Vo

ltage

− V

VDD = 3 VVI(PP) = 1 VVI = 1.5 VRL = 10 kΩCL = 160 pFAV = −1TA = 25°C

1.1

0.5

0.9

0.7

−0.2 0 0.2 0.4 1

t − Time − µ s

0.80.6 1.2 1.4

INVERTING LARGE SIGNAL

1.9

1.5

1.7

1.3

1.6 1.8

2.3

2.1 Input

Output

Figure 45

VDD = 5 VVI(PP) = 2 VVI = 2.5 VRL = 10 kΩCL = 160 pFAV = −1TA = 25°C

2.5

1

2

1.5

−0.2 0 0.2 0.4 1

t − Time − µ s

0.80.6 1.2 1.4

INVERTING LARGE SIGNAL

3.5

4

3

1.6 1.8

Input

Output

VO

− Vo

ltage

− V

Figure 46

VO

− Vo

ltage

− V

1.5

1.4

1.45

−0.2 0 0.2 0.4 1

t − Time − µs

0.80.6 1.2 1.4

INVERTING SMALL SIGNAL1.6

1.55Input

Output

1.6 1.8

VDD = 3 VVI(PP) = 100 mVVI = 1.5 VRL = 10 kΩCL = 160 pFAV = −1TA = 25°C

Figure 47

VO

− Vo

ltage

− V

2.5

2.4

2.45

−0.2 0 0.2 0.4 1

t − Time − µ s

0.80.6 1.2 1.4

INVERTING SMALL SIGNAL2.6

2.55Input

Output

1.6 1.8

VDD = 5 VVI(PP) = 100 mVVI = 2.5 VRL = 10 kΩCL = 160 pFAV = −1TA = 25°C



25WWW.TI.COM

PARAMETER MEASUREMENT INFORMATION

_

+

Rnull

RL CL

Figure 48

APPLICATION INFORMATION

driving a capacitive load

When the amplifier is configured in this manner, capacitive loading directly on the output will decrease thedevice’s phase margin leading to high frequency ringing or oscillations. Therefore, for capacitive loads of greaterthan 10 pF, it is recommended that a resistor be placed in series (RNULL) with the output of the amplifier, asshown in Figure 49. A minimum value of 20 Ω should work well for most applications.

CLOAD

RF

InputOutput

RGRNULL_

+

Figure 49. Driving a Capacitive Load

offset voltage

The output offset voltage, (VOO) is the sum of the input offset voltage (VIO) and both input bias currents (IIB) timesthe corresponding gains. The following schematic and formula can be used to calculate the output offsetvoltage:

VOO VIO1 RFRG IIB RS1 RF

RG IIB– RF

+

−VI

+

RG

RS

RF

IIB−

VO

IIB+

Figure 50. Output Offset Voltage Model



26 WWW.TI.COM


general configurations

When receiving low-level signals, limiting the bandwidth of the incoming signals into the system is oftenrequired. The simplest way to accomplish this is to place an RC filter at the noninverting terminal of the amplifier(see Figure 51).

VIVO

C1

+

−

RG RF

R1

f–3dB 12R1C1

VOVI

1 RFRG 1

1 sR1C1

Figure 51. Single-Pole Low-Pass Filter

If even more attenuation is needed, a multiple pole filter is required. The Sallen-Key filter can be used for thistask. For best results, the amplifier should have a bandwidth that is 8 to 10 times the filter frequency bandwidth.Failure to do this can result in phase shift of the amplifier.

VI

C2R2R1

C1

RFRG

R1 = R2 = RC1 = C2 = CQ = Peaking Factor(Butterworth Q = 0.707)

(=

1Q

2 − )RG

RF

_+

f–3dB 12RC

Figure 52. 2-Pole Low-Pass Sallen-Key Filter



27WWW.TI.COM


shutdown function

Three members of the TLV246x family (TLV2460/3/5) have a shutdown terminal for conserving battery life inportable applications. When the shutdown terminal is tied low, the supply current is reduced to 0.3 µA/channel,the amplifier is disabled, and the outputs are placed in a high impedance mode. To enable the amplifier, theshutdown terminal can either be left floating or pulled high. When the shutdown terminal is left floating, careshould be taken to ensure that parasitic leakage current at the shutdown terminal does not inadvertently placethe operational amplifier into shutdown. The shutdown terminal threshold is always referenced to VDD/2.Therefore, when operating the device with split supply voltages (e.g. ±2.5 V), the shutdown terminal needs tobe pulled to VDD− (not GND) to disable the operational amplifier.

The amplifier’s output with a shutdown pulse is shown in Figures 22, 23, 24, and 25. The amplifier is poweredwith a single 5-V supply and configured as a noninverting configuration with a gain of 5. The amplifier turnonand turnoff times are measured from the 50% point of the shutdown pulse to the 50% point of the outputwaveform. The times for the single, dual, and quad are listed in the data tables.

circuit layout considerations

To achieve the levels of high performance of the TLV246x, follow proper printed-circuit board design techniques.A general set of guidelines is given in the following.

Ground planes − It is highly recommended that a ground plane be used on the board to provide allcomponents with a low inductive ground connection. However, in the areas of the amplifier inputs andoutput, the ground plane can be removed to minimize the stray capacitance.

Proper power supply decoupling − Use a 6.8-µF tantalum capacitor in parallel with a 0.1-µF ceramiccapacitor on each supply terminal. It may be possible to share the tantalum among several amplifiersdepending on the application, but a 0.1-µF ceramic capacitor should always be used on the supply terminalof every amplifier. In addition, the 0.1-µF capacitor should be placed as close as possible to the supplyterminal. As this distance increases, the inductance in the connecting trace makes the capacitor lesseffective. The designer should strive for distances of less than 0.1 inches between the device powerterminals and the ceramic capacitors.

Sockets − Sockets can be used but are not recommended. The additional lead inductance in the socket pinswill often lead to stability problems. Surface-mount packages soldered directly to the printed-circuit boardis the best implementation.

Short trace runs/compact part placements − Optimum high performance is achieved when stray seriesinductance has been minimized. To realize this, the circuit layout should be made as compact as possible,thereby minimizing the length of all trace runs. Particular attention should be paid to the inverting input ofthe amplifier. Its length should be kept as short as possible. This will help to minimize stray capacitance atthe input of the amplifier.

Surface-mount passive components − Using surface-mount passive components is recommended for highperformance amplifier circuits for several reasons. First, because of the extremely low lead inductance ofsurface-mount components, the problem with stray series inductance is greatly reduced. Second, the smallsize of surface-mount components naturally leads to a more compact layout thereby minimizing both strayinductance and capacitance. If leaded components are used, it is recommended that the lead lengths bekept as short as possible.



28 WWW.TI.COM


general power dissipation considerations

For a given θJA, the maximum power dissipation is shown in Figure 53 and is calculated by the following formula:

PD TMAX–TAJA

Where:

PD = Maximum power dissipation of THS246x IC (watts)TMAX= Absolute maximum junction temperature (150°C)TA = Free-ambient air temperature (°C)θJA = θJC + θCA

θJC = Thermal coefficient from junction to caseθCA = Thermal coefficient from case to ambient air (°C/W)

1

0.75

0.5

0−55−40 −25 −10 5

Max

imum

Pow

er D

issi

patio

n −

W

1.25

1.5

MAXIMUM POWER DISSIPATIONvs


1.75

20 35 50

0.25


2

65 80 95 110 125

MSOP PackageLow-K Test PCBθJA = 260°C/W

TJ = 150°CPDIP PackageLow-K Test PCBθJA = 104°C/W

SOIC PackageLow-K Test PCBθJA = 176°C/W

SOT-23 PackageLow-K Test PCBθJA = 324°C/W

NOTE A: Results are with no air flow and using JEDEC Standard Low-K test PCB.

Figure 53. Maximum Power Dissipation vs Free-Air Temperature



29WWW.TI.COM


macromodel information

Macromodel information provided was derived using Microsim Parts Release 8, the model generationsoftware used with Microsim PSpice. The Boyle macromodel (see Note 2) and subcircuit in Figure 54 aregenerated using the TLV246x typical electrical and operating characteristics at TA = 25°C. Using thisinformation, output simulations of the following key parameters can be generated to a tolerance of 20% (in mostcases):

Maximum positive output voltage swing Maximum negative output voltage swing Slew rate Quiescent power dissipation Input bias current Open-loop voltage amplification

Unity-gain frequency Common-mode rejection ratio Phase margin DC output resistance AC output resistance Short-circuit output current limit

NOTE 2: G. R. Boyle, B. M. Cohn, D. O. Pederson, and J. E. Solomon, “Macromodeling of Intergrated Circuit Operational Amplifiers”, IEEEJournal of Solid-State Circuits, SC-9, 353 (1974).

+

−

+

−

+

−

+

− +

−

.SUBCKT TLV246X 1 2 3 4 5C1 11 12 2.46034E−12C2 6 7 10.0000E−12CSS 10 99 443.21E−15DC 5 53 DYDE 54 5 DYDLP 90 91 DXDLN 92 90 DXDP 4 3 DXEGND 99 0 POLY (2) (3,0) (4,0) 0 .5 .5FB 7 99 POLY (5) VB VC VE VLP+ VLN 0 21.600E6 −1E3 1E3 22E6 −22E6GA 6 0 11 12 345.26E−6GCM 0 6 10 99 15.4226E−9ISS 10 4 DC 18.850E−6HLIM 90 0 VLIM 1KJ1 11 2 10 JX1J2 12 1 10 JX2R2 6 9 100.00E3

RD1 3 11 2.8964E3RD2 3 12 2.8964E3R01 8 5 5.6000R02 7 99 6.2000RP 3 4 8.9127RSS 10 99 10.610E6VB 9 0 DC 0VC 3 53 DC .7836VE 54 4 DC .7436VLIM 7 8 DC 0VLP 91 0 DC 117VLN 0 92 DC 117.MODEL DX D (IS=800.00E−18).MODEL DY D (IS=800.00E−18 Rs = 1m Cjo=10p).MODEL JX1 NJF (IS=1.0000E−12 BETA=6.3239E−3+ VTO=−1).MODEL JX2 NJF (IS=1.0000E−12 BETA=6.3239E−3+ VTO=−1).ENDS

VDD+

RP

IN −2

IN+1

GND

RD1

11

J1 J2

10

RSSISS

3

12

RD2DP

VD

DC

4

C1

53

EGNDFB

HLIM

90

DLP

91

DLN

92

VLNVLP

99

CSS

+

−VE

DE

54

OUT

+

−+

−

R2 6

9

VB

C2

GA

VLIM

8

5

RO1

RO2

7

GCM

Figure 54. Boyle Macromodels and Subcircuit

PSpice and Parts are trademarks of MicroSim Corporation.



30 WWW.TI.COM

macromodel information (continued)

.subckt TLV_246Y 1 2 3 4 5 6c1 11 12 2.4603E−12c2 72 7 10.000E−12css 10 99 443.21E−15dc 70 53 dyde 54 70 dydlp 90 91 dxdln 92 90 dxdp 4 3 dxegnd 99 0 poly(2) (3,0) (4,0) 0 .5 .5fb 7 99 poly(5) vb vc ve vlp vln 0

21.600E6 −1E3 1E3 22E6 −22E6ga 72 0 11 12 345.26E−6gcm 0 72 10 99 15.422E−9iss 74 4 dc 18.850E−6hlim 90 0 vlim 1Kj1 11 2 10 jx1j2 12 1 10 jx2r2 72 9 100.00E3rd1 3 11 2.8964E3rd2 3 12 2.8964E3ro1 8 70 5.6000ro2 7 99 6.2000

rp 3 71 8.9127rss 10 99 10.610E6rs1 6 4 1Grs2 6 4 1Grs3 6 4 1Grs4 6 4 1Gs1 71 4 6 4 s1xs2 70 5 6 4 s1xs3 10 74 6 4 s1xs4 74 4 6 4 s2xvb 9 0 dc 0vc 3 53 dc .7836ve 54 4 dc .7436vlim 7 8 dc 0vlp 91 0 dc 117vln 0 92 dc 117.model dx D(Is=800.00E−18).model dy D(Is=800.00E−18 Rs=1m Cjo=10p).model jx1 NJF(Is=1.0000E−12 Beta=6.3239E−3 Vto=−1).model jx2 NJF(Is=1.0000E−12 Beta=6.3239E−3 Vto=−1).model s1x VSWITCH(Roff=1E8 Ron=1.0 Voff=2.5 Von=0.0).model s2x VSWITCH(Roff=1E8 Ron=1.0 Voff=0 Von=2.5).ends

Figure 54. Boyle Macromodels and Subcircuit (Continued)


PACKAGE OPTION ADDENDUM

www.ti.com 31-Oct-2013

Addendum-Page 1

PACKAGING INFORMATION

Orderable Device Status(1)

Package Type PackageDrawing

Pins PackageQty

Eco Plan(2)

Lead/Ball Finish(6)

MSL Peak Temp(3)

Op Temp (°C) Device Marking(4/5)

Samples

5962-0051201Q2A ACTIVE LCCC FK 20 1 TBD POST-PLATE N / A for Pkg Type -55 to 125 5962-0051201Q2ATLV2460MFKB

5962-0051201QHA ACTIVE CFP U 10 1 TBD A42 N / A for Pkg Type -55 to 125 0051201QHATLV2460M

5962-0051201QPA ACTIVE CDIP JG 8 1 TBD A42 N / A for Pkg Type -55 to 125 0051201QPATLV2460M

5962-0051202Q2A ACTIVE LCCC FK 20 1 TBD POST-PLATE N / A for Pkg Type -55 to 125 5962-0051202Q2ATLV2460AMFKB

5962-0051202QHA ACTIVE CFP U 10 1 TBD A42 N / A for Pkg Type -55 to 125 0051202QHATLV2460AM

5962-0051202QPA ACTIVE CDIP JG 8 1 TBD A42 N / A for Pkg Type -55 to 125 0051202QPATLV2460AM








http://www.ti.com/product/TLV2460M?CMP=conv-poasamples#samplebuy



http://www.ti.com/product/TLV2460AM?CMP=conv-poasamples#samplebuy












Addendum-Page 2



Pins PackageQty

Eco Plan(2)

Lead/Ball Finish(6)

MSL Peak Temp(3)


Samples







5962-0051207QCA ACTIVE CDIP J 14 1 TBD A42 N / A for Pkg Type -55 to 125 5962-0051207QCATLV2463MJB


5962-0051208QCA ACTIVE CDIP J 14 1 TBD A42 N / A for Pkg Type -55 to 125 5962-0051208QCATLV2463AMJB

TLV2460AIDR ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 125 2460AI

TLV2460AIDRG4 ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)


TLV2460AIP ACTIVE PDIP P 8 50 Pb-Free(RoHS)

CU NIPDAU N / A for Pkg Type -40 to 125 TLV2460AI

TLV2460AIPE4 ACTIVE PDIP P 8 50 Pb-Free(RoHS)


TLV2460AMFKB ACTIVE LCCC FK 20 1 TBD POST-PLATE N / A for Pkg Type -55 to 125 5962-0051202Q2ATLV2460AMFKB










http://www.ti.com/product/TLV2460A?CMP=conv-poasamples#samplebuy







Addendum-Page 3



Pins PackageQty

Eco Plan(2)

Lead/Ball Finish(6)

MSL Peak Temp(3)


Samples

TLV2460AMJGB ACTIVE CDIP JG 8 1 TBD A42 N / A for Pkg Type -55 to 125 0051202QPATLV2460AM

TLV2460AMUB ACTIVE CFP U 10 1 TBD A42 N / A for Pkg Type -55 to 125 0051202QHATLV2460AM

TLV2460AQD OBSOLETE SOIC D 8 TBD Call TI Call TI -40 to 125

TLV2460AQDR OBSOLETE SOIC D 8 TBD Call TI Call TI -40 to 125

TLV2460AQDRG4 ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM V2460A

TLV2460AQPW OBSOLETE TSSOP PW 8 TBD Call TI Call TI -40 to 125 V2460A

TLV2460AQPWG4 ACTIVE TSSOP PW 8 150 Green (RoHS& no Sb/Br)


TLV2460AQPWR OBSOLETE TSSOP PW 8 TBD Call TI Call TI -40 to 125 V2460A

TLV2460AQPWRG4 ACTIVE TSSOP PW 8 2000 Green (RoHS& no Sb/Br)


TLV2460CD ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM 0 to 70 2460C

TLV2460CDBVR ACTIVE SOT-23 DBV 6 3000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM 0 to 70 VAOC

TLV2460CDBVRG4 ACTIVE SOT-23 DBV 6 3000 Green (RoHS& no Sb/Br)


TLV2460CDBVT ACTIVE SOT-23 DBV 6 250 Green (RoHS& no Sb/Br)


TLV2460CDBVTG4 ACTIVE SOT-23 DBV 6 250 Green (RoHS& no Sb/Br)


TLV2460CDG4 ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)


TLV2460CDR ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)


TLV2460CDRG4 ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)


TLV2460CP ACTIVE PDIP P 8 50 Pb-Free(RoHS)

CU NIPDAU N / A for Pkg Type 0 to 70 TLV2460C

TLV2460CPE4 ACTIVE PDIP P 8 50 Pb-Free(RoHS)


TLV2460ID ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 125 2460I






http://www.ti.com/product/TLV2460?CMP=conv-poasamples#samplebuy













Addendum-Page 4



Pins PackageQty

Eco Plan(2)

Lead/Ball Finish(6)

MSL Peak Temp(3)


Samples

TLV2460IDBVR ACTIVE SOT-23 DBV 6 3000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 125 VAOI

TLV2460IDBVRG4 ACTIVE SOT-23 DBV 6 3000 Green (RoHS& no Sb/Br)


TLV2460IDBVT ACTIVE SOT-23 DBV 6 250 Green (RoHS& no Sb/Br)


TLV2460IDBVTG4 ACTIVE SOT-23 DBV 6 250 Green (RoHS& no Sb/Br)


TLV2460IDG4 ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)


TLV2460IDR ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)


TLV2460IDRG4 ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)


TLV2460IP ACTIVE PDIP P 8 50 Pb-Free(RoHS)

CU NIPDAU N / A for Pkg Type -40 to 125 TLV2460I

TLV2460IPE4 ACTIVE PDIP P 8 50 Pb-Free(RoHS)


TLV2460MFKB ACTIVE LCCC FK 20 1 TBD POST-PLATE N / A for Pkg Type -55 to 125 5962-0051201Q2ATLV2460MFKB

TLV2460MJG ACTIVE CDIP JG 8 1 TBD A42 N / A for Pkg Type -55 to 125 TLV2460MJG

TLV2460MJGB ACTIVE CDIP JG 8 1 TBD A42 N / A for Pkg Type -55 to 125 0051201QPATLV2460M

TLV2460MUB ACTIVE CFP U 10 1 TBD A42 N / A for Pkg Type -55 to 125 0051201QHATLV2460M

TLV2460QD OBSOLETE SOIC D 8 TBD Call TI Call TI -40 to 125

TLV2460QDR OBSOLETE SOIC D 8 TBD Call TI Call TI -40 to 125

TLV2460QPW OBSOLETE TSSOP PW 8 TBD Call TI Call TI -40 to 125 V2460Q

TLV2460QPWG4 ACTIVE TSSOP PW 8 150 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM V2460Q

TLV2460QPWR OBSOLETE TSSOP PW 8 TBD Call TI Call TI -40 to 125 V2460Q

TLV2460QPWRG4 ACTIVE TSSOP PW 8 2000 Green (RoHS& no Sb/Br)



















Addendum-Page 5



Pins PackageQty

Eco Plan(2)

Lead/Ball Finish(6)

MSL Peak Temp(3)


Samples

TLV2461AID ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)


TLV2461AIDG4 ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)













TLV2461AQD OBSOLETE SOIC D 8 TBD Call TI Call TI -40 to 125 V2461A

TLV2461AQDG4 ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)


TLV2461AQDR OBSOLETE SOIC D 8 TBD Call TI Call TI -40 to 125 V2461A



TLV2461AQPWR OBSOLETE TSSOP PW 8 TBD Call TI Call TI -40 to 125 V2461A





TLV2461CDBVR ACTIVE SOT-23 DBV 5 3000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM 0 to 70 VAPC

TLV2461CDBVRG4 ACTIVE SOT-23 DBV 5 3000 Green (RoHS& no Sb/Br)



















Addendum-Page 6



Pins PackageQty

Eco Plan(2)

Lead/Ball Finish(6)

MSL Peak Temp(3)


Samples

TLV2461CDBVT ACTIVE SOT-23 DBV 5 250 Green (RoHS& no Sb/Br)


TLV2461CDBVTG4 ACTIVE SOT-23 DBV 5 250 Green (RoHS& no Sb/Br)














TLV2461IDBVR ACTIVE SOT-23 DBV 5 3000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 125 VAPI

TLV2461IDBVRG4 ACTIVE SOT-23 DBV 5 3000 Green (RoHS& no Sb/Br)


TLV2461IDBVT ACTIVE SOT-23 DBV 5 250 Green (RoHS& no Sb/Br)


TLV2461IDBVTG4 ACTIVE SOT-23 DBV 5 250 Green (RoHS& no Sb/Br)












TLV2461MFKB ACTIVE LCCC FK 20 1 TBD POST-PLATE N / A for Pkg Type -55 to 125 5962-0051203Q2A





















Addendum-Page 7



Pins PackageQty

Eco Plan(2)

Lead/Ball Finish(6)

MSL Peak Temp(3)


Samples

TLV2461MFKB



TLV2461QD OBSOLETE SOIC D 8 TBD Call TI Call TI -40 to 125 V2461Q

TLV2461QDG4 ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)


TLV2461QDR OBSOLETE SOIC D 8 TBD Call TI Call TI -40 to 125 V2461Q

TLV2461QDRG4 ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)


















TLV2462AMJG ACTIVE CDIP JG 8 1 TBD A42 N / A for Pkg Type -55 to 125 TLV2462AMJG




















Addendum-Page 8



Pins PackageQty

Eco Plan(2)

Lead/Ball Finish(6)

MSL Peak Temp(3)


Samples

TLV2462AQD ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 125 V2462A





TLV2462AQPWR ACTIVE TSSOP PW 8 2000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 125 V2462A







TLV2462CDGK ACTIVE VSSOP DGK 8 80 Green (RoHS& no Sb/Br)

CU NIPDAU |CU NIPDAUAG

Level-1-260C-UNLIM 0 to 70 AAI

TLV2462CDGKG4 ACTIVE VSSOP DGK 8 80 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM 0 to 70 AAI

TLV2462CDGKR ACTIVE VSSOP DGK 8 2500 Green (RoHS& no Sb/Br)


Level-1-260C-UNLIM 0 to 70 AAI

TLV2462CDGKRG4 ACTIVE VSSOP DGK 8 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM 0 to 70 AAI






CU NIPDAU N / A for Pkg Type 0 to 70 TLV2462CP


CU NIPDAU N / A for Pkg Type 0 to 70 TLV2462CP





TLV2462IDGK ACTIVE VSSOP DGK 8 80 Green (RoHS& no Sb/Br)


Level-1-260C-UNLIM -40 to 125 AAJ





















Addendum-Page 9



Pins PackageQty

Eco Plan(2)

Lead/Ball Finish(6)

MSL Peak Temp(3)


Samples

TLV2462IDGKG4 ACTIVE VSSOP DGK 8 80 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 125 AAJ

TLV2462IDGKR ACTIVE VSSOP DGK 8 2500 Green (RoHS& no Sb/Br)


Level-1-260C-UNLIM -40 to 125 AAJ

TLV2462IDGKRG4 ACTIVE VSSOP DGK 8 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 125 AAJ






CU NIPDAU N / A for Pkg Type -40 to 125 TLV2462IP


CU NIPDAU N / A for Pkg Type -40 to 125 TLV2462IP









TLV2462QPWG4 ACTIVE TSSOP PW 8 150 Green (RoHS& no Sb/Br)


TLV2462QPWR ACTIVE TSSOP PW 8 2000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 125 V2462Q




CU NIPDAU Level-1-260C-UNLIM -40 to 125 TLV2463AI



















Addendum-Page 10



Pins PackageQty

Eco Plan(2)

Lead/Ball Finish(6)

MSL Peak Temp(3)


Samples


CU NIPDAU Level-1-260C-UNLIM -40 to 125 TLV2463AI


TLV2463AMJ ACTIVE CDIP J 14 1 TBD A42 N / A for Pkg Type -55 to 125 TLV2463AMJ

TLV2463AMJB ACTIVE CDIP J 14 1 TBD A42 N / A for Pkg Type -55 to 125 5962-0051208QCATLV2463AMJB

TLV2463AQD OBSOLETE SOIC D 14 TBD Call TI Call TI -40 to 125 V2463AQ


CU NIPDAU Level-1-260C-UNLIM V2463AQ

TLV2463AQDR OBSOLETE SOIC D 14 TBD Call TI Call TI -40 to 125 V2463AQ


CU NIPDAU Level-1-260C-UNLIM V2463AQ

TLV2463AQPWR OBSOLETE TSSOP PW 14 TBD Call TI Call TI -40 to 125 2463AQ


CU NIPDAU Level-1-260C-UNLIM 2463AQ


CU NIPDAU Level-1-260C-UNLIM 0 to 70 TLV2463C



TLV2463CDGS ACTIVE VSSOP DGS 10 80 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM 0 to 70 AAK

TLV2463CDGSG4 ACTIVE VSSOP DGS 10 80 Green (RoHS& no Sb/Br)


TLV2463CDGSR ACTIVE VSSOP DGS 10 2500 Green (RoHS& no Sb/Br)


TLV2463CDGSRG4 ACTIVE VSSOP DGS 10 2500 Green (RoHS& no Sb/Br)























Addendum-Page 11



Pins PackageQty

Eco Plan(2)

Lead/Ball Finish(6)

MSL Peak Temp(3)


Samples

TLV2463CN ACTIVE PDIP N 14 25 Pb-Free(RoHS)

CU NIPDAU N / A for Pkg Type 0 to 70 TLV2463CN

TLV2463CNE4 ACTIVE PDIP N 14 25 Pb-Free(RoHS)



CU NIPDAU Level-1-260C-UNLIM -40 to 125 TLV2463I



TLV2463IDGS ACTIVE VSSOP DGS 10 80 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 125 AAL

TLV2463IDGSG4 ACTIVE VSSOP DGS 10 80 Green (RoHS& no Sb/Br)


TLV2463IDGSR ACTIVE VSSOP DGS 10 2500 Green (RoHS& no Sb/Br)


TLV2463IDGSRG4 ACTIVE VSSOP DGS 10 2500 Green (RoHS& no Sb/Br)


TLV2463IN ACTIVE PDIP N 14 25 Pb-Free(RoHS)

CU NIPDAU N / A for Pkg Type -40 to 125 TLV2463IN

TLV2463INE4 ACTIVE PDIP N 14 25 Pb-Free(RoHS)



TLV2463MJB ACTIVE CDIP J 14 1 TBD A42 N / A for Pkg Type -55 to 125 5962-0051207QCATLV2463MJB

TLV2463QD OBSOLETE SOIC D 14 TBD Call TI Call TI -40 to 125 V2463Q


























Addendum-Page 12



Pins PackageQty

Eco Plan(2)

Lead/Ball Finish(6)

MSL Peak Temp(3)


Samples









TLV2464AIN ACTIVE PDIP N 14 25 Pb-Free(RoHS)

CU NIPDAU N / A for Pkg Type -40 to 125 TLV2464AIN

TLV2464AINE4 ACTIVE PDIP N 14 25 Pb-Free(RoHS)

CU NIPDAU N / A for Pkg Type -40 to 125 TLV2464AIN

TLV2464AIPW ACTIVE TSSOP PW 14 90 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 125 TY2464A

TLV2464AIPWG4 ACTIVE TSSOP PW 14 90 Green (RoHS& no Sb/Br)


TLV2464AIPWR ACTIVE TSSOP PW 14 2000 Green (RoHS& no Sb/Br)


TLV2464AIPWRG4 ACTIVE TSSOP PW 14 2000 Green (RoHS& no Sb/Br)










TLV2464CN ACTIVE PDIP N 14 25 Pb-Free(RoHS)


TLV2464CNE4 ACTIVE PDIP N 14 25 Pb-Free(RoHS)


TLV2464CPW ACTIVE TSSOP PW 14 90 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM 0 to 70 TV2464

TLV2464CPWG4 ACTIVE TSSOP PW 14 90 Green (RoHS& no Sb/Br)






















Addendum-Page 13



Pins PackageQty

Eco Plan(2)

Lead/Ball Finish(6)

MSL Peak Temp(3)


Samples

TLV2464CPWR ACTIVE TSSOP PW 14 2000 Green (RoHS& no Sb/Br)


TLV2464CPWRG4 ACTIVE TSSOP PW 14 2000 Green (RoHS& no Sb/Br)














TLV2464IPW ACTIVE TSSOP PW 14 90 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 125 TY2464

TLV2464IPWG4 ACTIVE TSSOP PW 14 90 Green (RoHS& no Sb/Br)


TLV2464IPWR ACTIVE TSSOP PW 14 2000 Green (RoHS& no Sb/Br)


TLV2464IPWRG4 ACTIVE TSSOP PW 14 2000 Green (RoHS& no Sb/Br)










TLV2465CPWR ACTIVE TSSOP PW 16 2000 Green (RoHS& no Sb/Br)


TLV2465CPWRG4 ACTIVE TSSOP PW 16 2000 Green (RoHS& no Sb/Br)






















Addendum-Page 14



Pins PackageQty

Eco Plan(2)

Lead/Ball Finish(6)

MSL Peak Temp(3)


Samples













TLV2465IPW ACTIVE TSSOP PW 16 90 Green (RoHS& no Sb/Br)


TLV2465IPWG4 ACTIVE TSSOP PW 16 90 Green (RoHS& no Sb/Br)


TLV2465IPWR ACTIVE TSSOP PW 16 2000 Green (RoHS& no Sb/Br)


TLV2465IPWRG4 ACTIVE TSSOP PW 16 2000 Green (RoHS& no Sb/Br)


(1) The marketing status values are defined as follows:ACTIVE: Product device recommended for new designs.LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.PREVIEW: Device has been announced but is not in production. Samples may or may not be available.OBSOLETE: TI has discontinued the production of the device.

(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availabilityinformation and additional product content details.TBD: The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement thatlead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used betweenthe die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weightin homogeneous material)











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Addendum-Page 15

(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuationof the previous line and the two combined represent the entire Device Marking for that device.

(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finishvalue exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on informationprovided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken andcontinues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

OTHER QUALIFIED VERSIONS OF TLV2460, TLV2460A, TLV2460AM, TLV2460M, TLV2461, TLV2461A, TLV2461AM, TLV2461M, TLV2462, TLV2462A, TLV2462AM,TLV2462M, TLV2463, TLV2463A, TLV2463AM, TLV2463M, TLV2464A :

• Catalog: TLV2460A, TLV2460, TLV2461A, TLV2461, TLV2462A, TLV2462, TLV2463A, TLV2463

• Automotive: TLV2460-Q1, TLV2460A-Q1, TLV2460A-Q1, TLV2460-Q1, TLV2461-Q1, TLV2461A-Q1, TLV2461A-Q1, TLV2461-Q1, TLV2462-Q1, TLV2462A-Q1, TLV2462A-Q1,TLV2462-Q1, TLV2463-Q1, TLV2463A-Q1, TLV2463A-Q1, TLV2463-Q1, TLV2464A-Q1

• Enhanced Product: TLV2462A-EP, TLV2462A-EP, TLV2464A-EP

• Military: TLV2460M, TLV2460AM, TLV2461M, TLV2461AM, TLV2462M, TLV2462AM, TLV2463M, TLV2463AM

NOTE: Qualified Version Definitions:

• Catalog - TI's standard catalog product

• Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects

• Enhanced Product - Supports Defense, Aerospace and Medical Applications

• Military - QML certified for Military and Defense Applications

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TAPE AND REEL INFORMATION

*All dimensions are nominal

Device PackageType

PackageDrawing

Pins SPQ ReelDiameter

(mm)

ReelWidth

W1 (mm)

A0(mm)

B0(mm)

K0(mm)

P1(mm)

W(mm)

Pin1Quadrant

TLV2460AIDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

TLV2460AIDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

TLV2460CDBVR SOT-23 DBV 6 3000 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3

TLV2460CDBVT SOT-23 DBV 6 250 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3

TLV2460CDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

TLV2460IDBVR SOT-23 DBV 6 3000 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3

TLV2460IDBVT SOT-23 DBV 6 250 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3

TLV2460IDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

TLV2460IDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

TLV2461AIDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

TLV2461AIDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1





TLV2461CDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1



PACKAGE MATERIALS INFORMATION

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Pack Materials-Page 1

Device PackageType

PackageDrawing

Pins SPQ ReelDiameter

(mm)

ReelWidth

W1 (mm)

A0(mm)

B0(mm)

K0(mm)

P1(mm)

W(mm)

Pin1Quadrant



TLV2461IDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

TLV2461IDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

TLV2462AIDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

TLV2462CDGKR VSSOP DGK 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

TLV2462CDGKR VSSOP DGK 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

TLV2462CDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

TLV2462IDGKR VSSOP DGK 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

TLV2462IDGKR VSSOP DGK 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

TLV2462IDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

TLV2463AIDR SOIC D 14 2500 330.0 16.4 6.5 9.0 2.1 8.0 16.0 Q1

TLV2463AQPWRG4 TSSOP PW 14 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1

TLV2463CDGSR VSSOP DGS 10 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

TLV2463CDR SOIC D 14 2500 330.0 16.4 6.5 9.0 2.1 8.0 16.0 Q1

TLV2463IDGSR VSSOP DGS 10 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

TLV2463QPWRG4 TSSOP PW 14 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1

TLV2464AIDR SOIC D 14 2500 330.0 16.4 6.5 9.0 2.1 8.0 16.0 Q1

TLV2464AIPWR TSSOP PW 14 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1

TLV2464CDR SOIC D 14 2500 330.0 16.4 6.5 9.0 2.1 8.0 16.0 Q1

TLV2464CPWR TSSOP PW 14 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1

TLV2464IDR SOIC D 14 2500 330.0 16.4 6.5 9.0 2.1 8.0 16.0 Q1

TLV2464IPWR TSSOP PW 14 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1

TLV2465CDR SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1

TLV2465CPWR TSSOP PW 16 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1

TLV2465IDR SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1

TLV2465IPWR TSSOP PW 16 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1




*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

TLV2460AIDR SOIC D 8 2500 367.0 367.0 35.0

TLV2460AIDR SOIC D 8 2500 340.5 338.1 20.6

TLV2460CDBVR SOT-23 DBV 6 3000 180.0 180.0 18.0

TLV2460CDBVT SOT-23 DBV 6 250 180.0 180.0 18.0

TLV2460CDR SOIC D 8 2500 340.5 338.1 20.6

TLV2460IDBVR SOT-23 DBV 6 3000 180.0 180.0 18.0

TLV2460IDBVT SOT-23 DBV 6 250 180.0 180.0 18.0

TLV2460IDR SOIC D 8 2500 367.0 367.0 35.0

TLV2460IDR SOIC D 8 2500 340.5 338.1 20.6

TLV2461AIDR SOIC D 8 2500 367.0 367.0 35.0

TLV2461AIDR SOIC D 8 2500 340.5 338.1 20.6

TLV2461CDBVR SOT-23 DBV 5 3000 180.0 180.0 18.0

TLV2461CDBVR SOT-23 DBV 5 3000 182.0 182.0 20.0

TLV2461CDBVT SOT-23 DBV 5 250 182.0 182.0 20.0

TLV2461CDBVT SOT-23 DBV 5 250 180.0 180.0 18.0

TLV2461CDR SOIC D 8 2500 340.5 338.1 20.6

TLV2461IDBVR SOT-23 DBV 5 3000 180.0 180.0 18.0

TLV2461IDBVR SOT-23 DBV 5 3000 182.0 182.0 20.0

TLV2461IDBVT SOT-23 DBV 5 250 182.0 182.0 20.0

TLV2461IDBVT SOT-23 DBV 5 250 180.0 180.0 18.0




Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

TLV2461IDR SOIC D 8 2500 367.0 367.0 35.0

TLV2461IDR SOIC D 8 2500 340.5 338.1 20.6

TLV2462AIDR SOIC D 8 2500 340.5 338.1 20.6

TLV2462CDGKR VSSOP DGK 8 2500 358.0 335.0 35.0

TLV2462CDGKR VSSOP DGK 8 2500 364.0 364.0 27.0

TLV2462CDR SOIC D 8 2500 340.5 338.1 20.6

TLV2462IDGKR VSSOP DGK 8 2500 358.0 335.0 35.0

TLV2462IDGKR VSSOP DGK 8 2500 364.0 364.0 27.0

TLV2462IDR SOIC D 8 2500 340.5 338.1 20.6

TLV2463AIDR SOIC D 14 2500 367.0 367.0 38.0

TLV2463AQPWRG4 TSSOP PW 14 2000 367.0 367.0 35.0

TLV2463CDGSR VSSOP DGS 10 2500 358.0 335.0 35.0

TLV2463CDR SOIC D 14 2500 367.0 367.0 38.0

TLV2463IDGSR VSSOP DGS 10 2500 358.0 335.0 35.0

TLV2463QPWRG4 TSSOP PW 14 2000 367.0 367.0 35.0

TLV2464AIDR SOIC D 14 2500 333.2 345.9 28.6

TLV2464AIPWR TSSOP PW 14 2000 367.0 367.0 35.0

TLV2464CDR SOIC D 14 2500 333.2 345.9 28.6

TLV2464CPWR TSSOP PW 14 2000 367.0 367.0 35.0

TLV2464IDR SOIC D 14 2500 333.2 345.9 28.6

TLV2464IPWR TSSOP PW 14 2000 367.0 367.0 35.0

TLV2465CDR SOIC D 16 2500 367.0 367.0 38.0

TLV2465CPWR TSSOP PW 16 2000 367.0 367.0 35.0

TLV2465IDR SOIC D 16 2500 367.0 367.0 38.0

TLV2465IPWR TSSOP PW 16 2000 367.0 367.0 35.0




MECHANICAL DATA

MCER001A – JANUARY 1995 – REVISED JANUARY 1997

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

JG (R-GDIP-T8) CERAMIC DUAL-IN-LINE

0.310 (7,87)0.290 (7,37)

0.014 (0,36)0.008 (0,20)

Seating Plane

4040107/C 08/96

5

40.065 (1,65)0.045 (1,14)

8

1

0.020 (0,51) MIN

0.400 (10,16)0.355 (9,00)

0.015 (0,38)0.023 (0,58)

0.063 (1,60)0.015 (0,38)

0.200 (5,08) MAX

0.130 (3,30) MIN

0.245 (6,22)0.280 (7,11)

0.100 (2,54)

0°–15°

NOTES: A. All linear dimensions are in inches (millimeters).B. This drawing is subject to change without notice.C. This package can be hermetically sealed with a ceramic lid using glass frit.D. Index point is provided on cap for terminal identification.E. Falls within MIL STD 1835 GDIP1-T8

IMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and otherchanges to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latestissue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current andcomplete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of salesupplied at the time of order acknowledgment.TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s termsand conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessaryto support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarilyperformed.TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products andapplications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provideadequate design and operating safeguards.TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, orother intellectual property right relating to any combination, machine, or process in which TI components or services are used. Informationpublished by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty orendorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of thethird party, or a license from TI under the patents or other intellectual property of TI.Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alterationand is accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such altereddocumentation. Information of third parties may be subject to additional restrictions.Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or servicevoids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice.TI is not responsible or liable for any such statements.Buyer acknowledges and agrees that it is solely responsible for compliance with all legal, regulatory and safety-related requirementsconcerning its products, and any use of TI components in its applications, notwithstanding any applications-related information or supportthat may be provided by TI. Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards whichanticipate dangerous consequences of failures, monitor failures and their consequences, lessen the likelihood of failures that might causeharm and take appropriate remedial actions. Buyer will fully indemnify TI and its representatives against any damages arising out of the useof any TI components in safety-critical applications.In some cases, TI components may be promoted specifically to facilitate safety-related applications. With such components, TI’s goal is tohelp enable customers to design and create their own end-product solutions that meet applicable functional safety standards andrequirements. Nonetheless, such components are subject to these terms.No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the partieshave executed a special agreement specifically governing such use.Only those TI components which TI has specifically designated as military grade or “enhanced plastic” are designed and intended for use inmilitary/aerospace applications or environments. Buyer acknowledges and agrees that any military or aerospace use of TI componentswhich have not been so designated is solely at the Buyer's risk, and that Buyer is solely responsible for compliance with all legal andregulatory requirements in connection with such use.TI has specifically designated certain components as meeting ISO/TS16949 requirements, mainly for automotive use. In any case of use ofnon-designated products, TI will not be responsible for any failure to meet ISO/TS16949.Products ApplicationsAudio www.ti.com/audio Automotive and Transportation www.ti.com/automotiveAmplifiers amplifier.ti.com Communications and Telecom www.ti.com/communicationsData Converters dataconverter.ti.com Computers and Peripherals www.ti.com/computersDLP® Products www.dlp.com Consumer Electronics www.ti.com/consumer-appsDSP dsp.ti.com Energy and Lighting www.ti.com/energyClocks and Timers www.ti.com/clocks Industrial www.ti.com/industrialInterface interface.ti.com Medical www.ti.com/medicalLogic logic.ti.com Security www.ti.com/securityPower Mgmt power.ti.com Space, Avionics and Defense www.ti.com/space-avionics-defenseMicrocontrollers microcontroller.ti.com Video and Imaging www.ti.com/videoRFID www.ti-rfid.comOMAP Applications Processors www.ti.com/omap TI E2E Community e2e.ti.comWireless Connectivity www.ti.com/wirelessconnectivity

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