銦鎵鋅氧化物 光學與結晶特性之研究
DESCRIPTION
銦鎵鋅氧化物 光學與結晶特性之研究. 指導教授：林克默 博士 報告學生：許博淳 報告日期： 2013/05/01. 大綱. 一、前言 二、研究動機與目的 三、實驗方法 四、結果與討論 五、結論. 前言. 透明導電氧化物 (Transparent Conductive Oxides, TCOs) ，在可見光範圍內有 80% 以上穿透率與高導電性，是目前光電產業相當熱門材料，已應用於各種顯示元件的透明電極或太陽電池的抗反射層。 傳統 TCOs 薄膜為了克服其缺陷，通常會藉由摻雜來改善電子濃度，以提升導電率，導致其應用領域受到某些限制，而不能滿足高新技術的發展需求。 - PowerPoint PPT PresentationTRANSCRIPT
PowerPoint TCOs
TCOs
Ga2O3 solution
In2O3 solution
TGA/DSC analysis
Heating at 100 °C for 24 hours in air in drying oven
Clear solution
MEA
Ga2O3 solution
In2O3 solution
Psot-heating at 400 °C for 1 hr in reduced atmosphere in tube furnace
Clear solution
MEA
In:Ga:Zn=X:Y:Z
IGZO precursor
ZnO solution
Spin coating at 2000 rpm for 10 sec then 3000 rpm for 20 sec
Pre-heating at 200 °C for 10 min in air in RTA
TF-XRD
FE-SEM
SE
UV-Vis-NIR
K.J. Chen, F.Y. Hung, S.J. Chang, Z.S. Hu, “Microstructures, optical and electrical properties of In-doped ZnO thin films prepared by sol–gel method,” Appl. Surf. Sci. 255 (2009) 6308 – 6312.
Seung-Yup Lee, Byung-Ok Park, “ Electrical and optical properties of In2O3–ZnO thin films prepared by sol–gel method”, Thin Solid Films 484 (2005) 184 – 187.
Chunfei Li, Yoshio Bando, Masaki Nakamura, Mitsuko Onoda, and Noboru Kimizuka, “Modulated Structures of Homologous Compounds InMO3(ZnO)m (M=In, Ga; m=Integer) Described by Four-Dimensional Superspace Group”, J. Solid State Chem. 139 (1998) 347 – 355.
Julia M. Phillips, R. J. Cava, G. A. Thomas, S. A. Carter, J. Kwo, T. Siegrist, J. J. Krajewski, J. H. Marshall, W. F. Peck, Jr., and D. H. Rapkine, “Zinc-indium-oxide: A high conductivity transparent conducting oxide”, Appl. Phys. Lett. 67 (1995) 2246.
Ethanol+ZnAcEthanol+Ga(NO
air in drying oven
MEA
reduced atmosphere in tube furnace
Clear solution
MEA
then 3000 rpm for 20 sec
Pre-heating at 200 °Cfor 10 min in
air in RTA
TCOs
Ga2O3 solution
In2O3 solution
TGA/DSC analysis
Heating at 100 °C for 24 hours in air in drying oven
Clear solution
MEA
Ga2O3 solution
In2O3 solution
Psot-heating at 400 °C for 1 hr in reduced atmosphere in tube furnace
Clear solution
MEA
In:Ga:Zn=X:Y:Z
IGZO precursor
ZnO solution
Spin coating at 2000 rpm for 10 sec then 3000 rpm for 20 sec
Pre-heating at 200 °C for 10 min in air in RTA
TF-XRD
FE-SEM
SE
UV-Vis-NIR
K.J. Chen, F.Y. Hung, S.J. Chang, Z.S. Hu, “Microstructures, optical and electrical properties of In-doped ZnO thin films prepared by sol–gel method,” Appl. Surf. Sci. 255 (2009) 6308 – 6312.
Seung-Yup Lee, Byung-Ok Park, “ Electrical and optical properties of In2O3–ZnO thin films prepared by sol–gel method”, Thin Solid Films 484 (2005) 184 – 187.
Chunfei Li, Yoshio Bando, Masaki Nakamura, Mitsuko Onoda, and Noboru Kimizuka, “Modulated Structures of Homologous Compounds InMO3(ZnO)m (M=In, Ga; m=Integer) Described by Four-Dimensional Superspace Group”, J. Solid State Chem. 139 (1998) 347 – 355.
Julia M. Phillips, R. J. Cava, G. A. Thomas, S. A. Carter, J. Kwo, T. Siegrist, J. J. Krajewski, J. H. Marshall, W. F. Peck, Jr., and D. H. Rapkine, “Zinc-indium-oxide: A high conductivity transparent conducting oxide”, Appl. Phys. Lett. 67 (1995) 2246.
Ethanol+ZnAcEthanol+Ga(NO
air in drying oven
MEA
reduced atmosphere in tube furnace
Clear solution
MEA
then 3000 rpm for 20 sec
Pre-heating at 200 °Cfor 10 min in
air in RTA