法拉第旋转片单晶体 rare-earth iron garnet single crystals)
TRANSCRIPT
6/1/2015
1
2.
3.
4. 3 4-1. 4-2. 4 4-3. 5 4-4.
5. 6 5-1.
5-1-1. 5-1-2. 5-1-3. 7 5-1-4. 8 5-1-5. 9
5-2. 10 5-2-1. 5-2-2. 5-2-3. 11 5-2-4.
5-3. 12 5-3-1. 5-3-2. 13
6. 14 6-1. 6-2. 6-3. 15
6-3-1 16 6-3-2 GMF 17
6-4. 18
7-3.
8-2-1. 8-2-2.
9. 22 9-1. 9-2. AR 9-3. AR 23 9-4.
10. 10-1. 24 10-2. 10-3.
2
G
GLB (LB L-Band) L-Band (Insertion Loss)(in-line)(Optical Isolator)
GSF (SF Saturation Field)(Saturation Field) GSF
GMF (MF Magnet-Free)
E ETD GTD (lead)
2.
AAABBBBCD – ex. GTD 1550 L A – 45 ±0.5
AAA GTD, GLB, GSF, GMF, ETD BBBB 1550(nm); 1310(nm), etc. C L; 11mm C; D A; E;
N; X;
45 (deg/nm) GTD GLB GSF GMF ETD
1310nm 0.085 0.085 0.085 0.085 1480nm 0.07 0.075 0.075 0.075 0.07 1550nm 0.06 0.07 0.065 0.065 0.06 1590nm 0.055 0.065 0.06 0.06 0.055
45 , (deg/C) GTD GLB GSF GMF ETD
1310nm 0.04 0.07 0.07
1310 - 1550nm 0.1 0.05
(μm) (typ.) GTD GLB GSF GMF ETD
1310nm 310 320 280 310 1550nm 450 390 475 420 450
GTD GLB GSF GMF ETD
Hs(Oe) 700 800 200 700
Tcomp.(C) <-50 <-50 -50 0 <-50
Tc(C) 300 300 250 230 300
Hc(Oe) 500 Hs ; 1mm 6-2 Tcomp. ; (Compensation Temperature) Tc ; (Curie Temperature) Hc ; (Coercive Force)
3
(LPELiquid phase Epitaxial) ——(RIGBismuth substituted Rare-earth Iron Garnet single crystal)
RIG (C3)(A2D3)O12 4-1 4-1 4-2 RIG
4-1
Table. 4-1 RIG GTD GLB GSF GMF ETD
() 12.5 (10-6 K-1) 11 10 11 (1550nm) * Fig.4-2 2.3 – 2.4 *(Mohs’ Scale) 7 *(GPa) (Young’s Modulus) 200 *(Poisson’s Ratio) 0.29 *(g/cm3) 6.7 *(W/m K) (Thermal Conductivity) 5 *(J/mole K) (Heat Capacity) 420
*
In de
x GLB
RIG 1μm 5μm (Faraday Effect)(magneto-optical material)
RIG 10002000(deg/cm) 4-3 GTD 1cm 3 45
RIG (Extinction Ratio) ( 5-1-5 )AR ( 5-1-4 ) () 4-3
RIG GLB L Band 5-2
4-3
RIG RIG RIG RIG
GMF GMF GMF GMF 6
.4-1 RIG
4-4.
LPE RIG 5000ppm GTDGLBGSFGMF G ETD 4-4 G 1000ppm RoHS
Fig.4-4
50 0
60 0
70 0
80 0
90 0
10 00
5-1 DFB (Polarizer)(Analyzer)
5-1
5-1-2.
5-2 5-3 GTD 3 45 1nm O-BandE-Band C-BandL-Band
5-2 GTD1310
5-3 GTD1550
5-1-3.
5-4 5-5 GTD 05045 1 GTDETD 1310nm 1550nm
5-6
5-4 GTD1310
E xt
in ct
io n
R at
io (d
Fa ra
da y
A ng
5-7 RIG (magnetic anisotropy) RIG
5-7
5-8
AR AR RIG 3 5
5-9
5-9
incident angle : ψ light
Fa ra
da y
ro ta
tio n
(d eg
In se
rti on
L os
s (d
5-10
5-11
polarization plane for stress (degree)
E xt
in ct
io n
R at
io (d
2
10
0
0.2
0.4
0.6
0.8
1
Wavelength(nm)
In se
rti on
L os
s( dB
5-2. 5-2-1.
5-12 FP DFB
5-12
5-2-2.
5-13 C-Band L-Band GLB L-Band L-Band GLB
5-14 GLBGLB GLB 1.5 GLB
5-13
5-14 GLB
5-2-4.
5-15 5-16 5-15 GTD1310 5-16 1m
5-15 GTD1310
5-16 GLB
Temperature (
5-17 RIG
5-18
E xt
in ct
io n
R at
io (d
5-19 0 (n=0) 45 -3dB -1dB
5-19
Hs Hn Hc
6-1
6-2
(Nucleation Field)Hn :
Hn 6-4
Hc : GMF
Hc Hn GMF Hc 6-3
6-2 GTD
Hex(Oe)
6-2.
RIG RIG GMF RIG Hs 6-3 GTDETD Hs 6- 4 GSF -2085
6-3 GTD ETD
6-4 GSF
6-5
H s
(O e)
S at
ur at
io n
Fi el
d H
s( O
D em
ag ne
tiz in
g F
ac to
r N
6-3. 6-3-1.
6-6 GMF GMF (hysteresis)() Hc GMF
GMF Hc 400(Oe) 2000(Oe) Hc Hc
6-6 GMF Hex-θ
6-7 GMF Hc Hc GMF
6-7 Hc
Hex(Oe)
C oe
rc iv
e Fo
rc e
(k A
GMFGMF GMF GMF
GMF 6-8
6-8
Hc 6-7 Hc Hc Hc Hc
GMF
GMF GMF 40 3000(Oe) (25)GMF 1 400(Oe)
Magnetic Garnet
Single Crystal
Chip tray
Direction of rotation
Ray of light
Direction of magnetization
6-4.
RIG ( Tcomp. )( Tc )() 220300RIG () 0 0 RIG () 0 () RIG
6-9 GMF GMF-10-10 RIG ()GMF 6-10 GMF , GMF
6-9
6-10
Table.7-1.
Item code Index () A 0.2 % E 1300 – 1650 nm 0.2 % N
X
7-1 ”A” “E”
7-2. 7-2-1. “A”()
“A”( 1) “A” SiO2/TiO2 SiO2/TaO5 7-1 1550nm SiO2/TaO5
“A” RIG(n=2.39 4-1)(n=1.96) GLB1064 RIG RIG
7-1 “A”()
7-2-2. “E”()
“E” 1300nm 1650nm “E” SiO2/TiO 7-2
7-2
7-3 “A”
7-3
() GMF
1002000 -402000 9090Rh2000 -45 – 901000
0
0.1
0.2
0.3
0.4
0.5
W avelength (nm)
0
0.1
0.2
0.3
0.4
0.5
Wavelength (nm)
R ef
le ct
io n
Incidente angle 5 degree
10 degree (p) 20 degree (s) 20 degree (p) 30 degree (s) 30 degree (p)
21
18 m 0-800 MW/cm2
20 ns 6 kHz 2 sec
8-1
8-2-2.
8-2 A1T1064 1mmφ 1064nm YAG 100mW 1064nm A1T1064 0.8dB A1T1064nm 200mW
RIG RIG RIG ( 5-1-4 ) A1T1064 1W 1200-1600nm
* A1T1064GLB1064
D ep
th o
Thresholds : 100 (MW/cm ) ( 260W 18m )
2
2
0
200
400
600
800
1000
O ut
RIG 2m 5m 5m
10mm
AR 2m 20m 20m
10mm
AR 50m 30m 350m
350m 5
9-2 AR
1mm (- 0.2)mm 1mm2mm (×0.8)mm
RIG 2m 2m 5m
5m
AR < 2m 2m 20m
20m
AR 50m 10m
10m 30m 30m
5
9-2. AR (pin-hole)
9-1 ()() 300µm 400µm
9-1
9-2 AR 9-2 AR AR AR 9-3
0
0.1
0.2
0.3
0.4
0.5
0 20 40 60 80 100 Size of a defect (m)
In se
rti on
L os
s( dB
Beam Diameter 400m
9-3 AR
9-3. RIG AR
9-4 RIG () AR 2
9-4 RIG
9-5
In se
rti on
L os
s (d
beam radius ; 300m optical effective area ; 750m
0
0.05
0.1
0.15
0.2
0 1 2 3 4 5 Width of a scratch (μm)
In se
rti on
L os
s( dB
R ef
le ct
io n(
Beam Diameter = 300m
10. 10-1. (Growth Striation)
10-1 () GGG (LPE ) RIG GGG GGG RIG 10-1
RIG
10-1
10-2. (Swirl)
10-1 V LPE RIG RIG
10-3. (Surface Undulation)
1
2.
3.
4. 3 4-1. 4-2. 4 4-3. 5 4-4.
5. 6 5-1.
5-1-1. 5-1-2. 5-1-3. 7 5-1-4. 8 5-1-5. 9
5-2. 10 5-2-1. 5-2-2. 5-2-3. 11 5-2-4.
5-3. 12 5-3-1. 5-3-2. 13
6. 14 6-1. 6-2. 6-3. 15
6-3-1 16 6-3-2 GMF 17
6-4. 18
7-3.
8-2-1. 8-2-2.
9. 22 9-1. 9-2. AR 9-3. AR 23 9-4.
10. 10-1. 24 10-2. 10-3.
2
G
GLB (LB L-Band) L-Band (Insertion Loss)(in-line)(Optical Isolator)
GSF (SF Saturation Field)(Saturation Field) GSF
GMF (MF Magnet-Free)
E ETD GTD (lead)
2.
AAABBBBCD – ex. GTD 1550 L A – 45 ±0.5
AAA GTD, GLB, GSF, GMF, ETD BBBB 1550(nm); 1310(nm), etc. C L; 11mm C; D A; E;
N; X;
45 (deg/nm) GTD GLB GSF GMF ETD
1310nm 0.085 0.085 0.085 0.085 1480nm 0.07 0.075 0.075 0.075 0.07 1550nm 0.06 0.07 0.065 0.065 0.06 1590nm 0.055 0.065 0.06 0.06 0.055
45 , (deg/C) GTD GLB GSF GMF ETD
1310nm 0.04 0.07 0.07
1310 - 1550nm 0.1 0.05
(μm) (typ.) GTD GLB GSF GMF ETD
1310nm 310 320 280 310 1550nm 450 390 475 420 450
GTD GLB GSF GMF ETD
Hs(Oe) 700 800 200 700
Tcomp.(C) <-50 <-50 -50 0 <-50
Tc(C) 300 300 250 230 300
Hc(Oe) 500 Hs ; 1mm 6-2 Tcomp. ; (Compensation Temperature) Tc ; (Curie Temperature) Hc ; (Coercive Force)
3
(LPELiquid phase Epitaxial) ——(RIGBismuth substituted Rare-earth Iron Garnet single crystal)
RIG (C3)(A2D3)O12 4-1 4-1 4-2 RIG
4-1
Table. 4-1 RIG GTD GLB GSF GMF ETD
() 12.5 (10-6 K-1) 11 10 11 (1550nm) * Fig.4-2 2.3 – 2.4 *(Mohs’ Scale) 7 *(GPa) (Young’s Modulus) 200 *(Poisson’s Ratio) 0.29 *(g/cm3) 6.7 *(W/m K) (Thermal Conductivity) 5 *(J/mole K) (Heat Capacity) 420
*
In de
x GLB
RIG 1μm 5μm (Faraday Effect)(magneto-optical material)
RIG 10002000(deg/cm) 4-3 GTD 1cm 3 45
RIG (Extinction Ratio) ( 5-1-5 )AR ( 5-1-4 ) () 4-3
RIG GLB L Band 5-2
4-3
RIG RIG RIG RIG
GMF GMF GMF GMF 6
.4-1 RIG
4-4.
LPE RIG 5000ppm GTDGLBGSFGMF G ETD 4-4 G 1000ppm RoHS
Fig.4-4
50 0
60 0
70 0
80 0
90 0
10 00
5-1 DFB (Polarizer)(Analyzer)
5-1
5-1-2.
5-2 5-3 GTD 3 45 1nm O-BandE-Band C-BandL-Band
5-2 GTD1310
5-3 GTD1550
5-1-3.
5-4 5-5 GTD 05045 1 GTDETD 1310nm 1550nm
5-6
5-4 GTD1310
E xt
in ct
io n
R at
io (d
Fa ra
da y
A ng
5-7 RIG (magnetic anisotropy) RIG
5-7
5-8
AR AR RIG 3 5
5-9
5-9
incident angle : ψ light
Fa ra
da y
ro ta
tio n
(d eg
In se
rti on
L os
s (d
5-10
5-11
polarization plane for stress (degree)
E xt
in ct
io n
R at
io (d
2
10
0
0.2
0.4
0.6
0.8
1
Wavelength(nm)
In se
rti on
L os
s( dB
5-2. 5-2-1.
5-12 FP DFB
5-12
5-2-2.
5-13 C-Band L-Band GLB L-Band L-Band GLB
5-14 GLBGLB GLB 1.5 GLB
5-13
5-14 GLB
5-2-4.
5-15 5-16 5-15 GTD1310 5-16 1m
5-15 GTD1310
5-16 GLB
Temperature (
5-17 RIG
5-18
E xt
in ct
io n
R at
io (d
5-19 0 (n=0) 45 -3dB -1dB
5-19
Hs Hn Hc
6-1
6-2
(Nucleation Field)Hn :
Hn 6-4
Hc : GMF
Hc Hn GMF Hc 6-3
6-2 GTD
Hex(Oe)
6-2.
RIG RIG GMF RIG Hs 6-3 GTDETD Hs 6- 4 GSF -2085
6-3 GTD ETD
6-4 GSF
6-5
H s
(O e)
S at
ur at
io n
Fi el
d H
s( O
D em
ag ne
tiz in
g F
ac to
r N
6-3. 6-3-1.
6-6 GMF GMF (hysteresis)() Hc GMF
GMF Hc 400(Oe) 2000(Oe) Hc Hc
6-6 GMF Hex-θ
6-7 GMF Hc Hc GMF
6-7 Hc
Hex(Oe)
C oe
rc iv
e Fo
rc e
(k A
GMFGMF GMF GMF
GMF 6-8
6-8
Hc 6-7 Hc Hc Hc Hc
GMF
GMF GMF 40 3000(Oe) (25)GMF 1 400(Oe)
Magnetic Garnet
Single Crystal
Chip tray
Direction of rotation
Ray of light
Direction of magnetization
6-4.
RIG ( Tcomp. )( Tc )() 220300RIG () 0 0 RIG () 0 () RIG
6-9 GMF GMF-10-10 RIG ()GMF 6-10 GMF , GMF
6-9
6-10
Table.7-1.
Item code Index () A 0.2 % E 1300 – 1650 nm 0.2 % N
X
7-1 ”A” “E”
7-2. 7-2-1. “A”()
“A”( 1) “A” SiO2/TiO2 SiO2/TaO5 7-1 1550nm SiO2/TaO5
“A” RIG(n=2.39 4-1)(n=1.96) GLB1064 RIG RIG
7-1 “A”()
7-2-2. “E”()
“E” 1300nm 1650nm “E” SiO2/TiO 7-2
7-2
7-3 “A”
7-3
() GMF
1002000 -402000 9090Rh2000 -45 – 901000
0
0.1
0.2
0.3
0.4
0.5
W avelength (nm)
0
0.1
0.2
0.3
0.4
0.5
Wavelength (nm)
R ef
le ct
io n
Incidente angle 5 degree
10 degree (p) 20 degree (s) 20 degree (p) 30 degree (s) 30 degree (p)
21
18 m 0-800 MW/cm2
20 ns 6 kHz 2 sec
8-1
8-2-2.
8-2 A1T1064 1mmφ 1064nm YAG 100mW 1064nm A1T1064 0.8dB A1T1064nm 200mW
RIG RIG RIG ( 5-1-4 ) A1T1064 1W 1200-1600nm
* A1T1064GLB1064
D ep
th o
Thresholds : 100 (MW/cm ) ( 260W 18m )
2
2
0
200
400
600
800
1000
O ut
RIG 2m 5m 5m
10mm
AR 2m 20m 20m
10mm
AR 50m 30m 350m
350m 5
9-2 AR
1mm (- 0.2)mm 1mm2mm (×0.8)mm
RIG 2m 2m 5m
5m
AR < 2m 2m 20m
20m
AR 50m 10m
10m 30m 30m
5
9-2. AR (pin-hole)
9-1 ()() 300µm 400µm
9-1
9-2 AR 9-2 AR AR AR 9-3
0
0.1
0.2
0.3
0.4
0.5
0 20 40 60 80 100 Size of a defect (m)
In se
rti on
L os
s( dB
Beam Diameter 400m
9-3 AR
9-3. RIG AR
9-4 RIG () AR 2
9-4 RIG
9-5
In se
rti on
L os
s (d
beam radius ; 300m optical effective area ; 750m
0
0.05
0.1
0.15
0.2
0 1 2 3 4 5 Width of a scratch (μm)
In se
rti on
L os
s( dB
R ef
le ct
io n(
Beam Diameter = 300m
10. 10-1. (Growth Striation)
10-1 () GGG (LPE ) RIG GGG GGG RIG 10-1
RIG
10-1
10-2. (Swirl)
10-1 V LPE RIG RIG
10-3. (Surface Undulation)