-

-

(MRI-PET)

MRI()

PET()

(PMMA)

-

105A/W106

1000V

(102A/W)(103)

15200V

(APD)

(Photomultiplier Tube: PMT)

APD

APD

GaNAPD

SiCAPD

EgeV

GaN

SiC

ZnSSe

Eg=2.73.0eV

GaAs

()

ZnSSeAPD

PINZnSSeAPD

n-ZnSSe

i-ZnSSe

p-ZnSSep-ZnSe

p-ZnSe/p-ZnTe

p-GaAs

[] []

In

Au-Ge/Au

pn

1st

2nd3rd

[]

(nm)

(A/W

)

-

APD

-

n-ZnSSe 300(

50nm100nm150nm

APPLIED PHYSICS LETTERS 93,123309(2008)

P =5.1eV 300600S/cm

n-ZnSSe

n-ZnSe

i-ZnSSe

P*-PEDOT

n-GaAs

PEDOTPSS()

p-GaAs

p-ZnSe/p-ZnTe p-ZnSe

p-ZnSSe

n-ZnSSe

i-ZnSSe

n-ZnSSe

n-ZnSe

i-ZnSSe

n-GaAs

P*-PEDOT

[]

[]-

150nm200

(51015cm-3)0.3m

0.5m

200

(41018cm-3)

(41018cm-3)

pnPtIn

(MBE)270NZnCl2

150nm 5000rpm

n-ZnSSe

n-ZnSe

i-ZnSSe

n-GaAs

PEDOTPt

In

Pt

Pt(EB)200

(ZnSSe)

(PEDOT)

(0V)

(nm)

()

-APD

APD

Si-PIN(S1226-44QB)

APD

(V)

(A

/mm

2 )

28V

28V

(300K)

[10-6]

(A

)

(V)

300K250K200K150K100K

Si-APD(Vb=200V)

1/10

ZnSSe

(=2/a)

(e

V)

(mh*0.3)

(V)

G

(gai

n)

ZnSSePEDOTAPD

650

50

-APD

APD

He-Cd Laser 442nm

(PEDOT)-(ZnSSe) APD

(400nm):2030%

-

APD

50 650

(APD)-

APD

ZnSSe

i-ZnSSe

n-ZnSSe

n-ZnSen+-GaAs

PEDOT

PEDOT:PSS

5.1eV

i-ZnSSe n-ZnSSe

- 2 3 4 5 6- 8(0V)APD 13(APD)