13 esercizi mosfet bjt

12
 20-4-2012 Vin= 2V , Vdd=5V, VTHn=1V, VTHp=-1V, b1= 400mA/V 2 , b2=200mA/V 2 , b F3 =50 , Vg=0,6V, V T =25mV, R C =100 W, R B =10 KW Vdd Vin Vout M1 M2 Q3  Vx Vy  Rc Rb   2 2 1 1 2  2 2 2 2 1 : 1 , 2 400 2 1 200 2 2 200 5 2 1 400 2 2 200 10 4 0.6 0.6 10000 200 0.6 2 2.6  D in THn  D dd A THp  B D D C B out DD C C   y  x y B B  Ipotesi M M saturi  I V V A  I V V V A  I I I A  I I mA V V R I V  V V V V R I  ipotesi di saturazione verificat  b m  b m m  b m  e

Upload: alessandro

Post on 06-Oct-2015

23 views

Category:

Documents


1 download

DESCRIPTION

esercizi elementi di elettronica. mosfet

TRANSCRIPT

  • 20-4-2012

    Vin=2V, Vdd=5V, VTHn=1V, VTHp=-1V, b1= 400mA/V2, b2=200mA/V2, bF3=50 , Vg=0,6V, VT=25mV, RC=100 W, RB=10 KW

    Vdd

    Vin

    Vout

    M1

    M2

    Q3

    Vx Vy

    Rc

    Rb

    2 211

    2 222

    2 1

    : 1, 2

    4002 1 200

    2 2

    2005 2 1 400

    2 2

    200

    10

    4

    0.6

    0.6 10000 200 0.6 2 2.6

    D in THn

    D dd A THp

    B D D

    C B

    out DD C C

    y

    x y B B

    Ipotesi M M saturi

    I V V A

    I V V V A

    I I I A

    I I mA

    V V R I V

    V V

    V V R I

    ipotesi di saturazione verificat

    bm

    bm

    m

    b

    m

    e

  • 20-4-2012 Vdd

    Vin

    Vout

    M1

    M2

    Q3

    Vx Vy

    Rc

    Rb

    gm2 (-vin)

    gm1 vin

    vin

    gm3 vbe

    vout

    r

    Rb

    Rc

    p

    gm2 vingm3 vy

    voutvin

    Rb

    r

    Rc

    gm1 vin

    vx vy

    1 2

    3

    1 2 3

    ( )

    ( )

    m m in y

    out m C y

    outm m m C

    in

    r g g v v

    v g R v

    vr g g g R

    v

    p

    p

    gm1=400(2-1)=400 mS, gm2=200(5-2-1)=400 mS, gm3= IC3/ VT= 400mS, rp3= b3/ gm3=125W, A V= - 3.2 V

  • 20-4-2012

    R1=4 kW, R2=2 kW, R3=2 kW, Vin=0.5 V

    1 2 3

    2 3 2 3

    1 1 2 3

    2 20.25

    ( ) 4 (2 2)

    out x

    in out out

    out

    in

    V V

    V V V V V V

    R R R

    R RV R R

    V R R R R

    IR1= 125 mA, IR2= -62,5mA, IR3=-62,5mA, V out= V x= -0.125 V

  • 20-6-2012

    Vin1=4V, Vin2=4V, Vdd=5V, VTHn=1V, bA1= bB1= 20mA/V2, bC1= 40mA/V2, bA2= bB2= 40mA/V2, bC2= 80mA/V2, R=20 kW.

    Vout

    Vdd

    RMA1

    Vx1

    Vin1 Vin2

    Vx2

    MB1 MC1 MB2MC2

    MA2

    2 21 11 1 1 1 1

    1 1 1

    11

    2 211 1 1

    2 211 1

    22

    2 2

    1

    :

    2 2

    22

    202 1 10

    2 2

    402 1 20

    2 2

    ...

    22

    20

    4

    A BDA in x THn DB x THn

    in x THn x THn

    inx

    BDA DB x THn

    CDC x THn

    inx

    DA DB

    DC

    Ipotesi MOSFET saturi

    I V V V I V V

    V V V V V

    VV V

    I I V V A

    I V V A

    VV V

    I I A

    I

    b b

    b mm

    b mm

    m

    2 1

    0

    60

    10

    5 20 *60 3,8

    R DC DC

    C B

    out DD R

    A

    I I I A

    I I mA

    V V RI K V

    ipotesi di saturazione verificate

    m

    m

    b

    m

  • RgmA1(vin1-vx1)

    vx1

    vout

    gmB1gmC1 vx1

    gmA2(vin2-vx2)

    vx2

    gmB2gmC2 vx2

    11 1 1

    1

    11 1

    1 1

    22 2

    2 2

    1 1 2 2

    1 21 1 2

    1 1 2 2

    1 1 1

    1 1 1

    ( )

    ( )

    20 *40 0,82

    mAx in x

    mB

    mAx in

    mA mB

    mAx in

    mA mB

    out mC x mC x

    mA mAout mC in in

    mA mB mA mB

    out mC mA mC

    in mA mB

    gv v v

    g

    gv v

    g g

    gv v

    g g

    v R g v g v

    g gv R g v v

    g g g g

    v g g gR R k

    v g gm

    gmA1= gmB1=20(2-1)=20 mS, gmC1=40(2-1)=40 mS, gmA2= gmB2=40(2-1)=40 mS, gmC2=80(2-1)=80 mS, goA1= goB1= goC1= goA2= goB2= goC2=0

    Vout

    Vdd

    RMA1

    Vx1

    Vin1 Vin2

    Vx2

    MB1 MC1 MB2MC2

    MA2

  • 20-6-2012

    RC=10 k W, RB=400 k W, RE=2 k W, RC=10 k W, VCC=5 V, Vin=1 V, VBE=0,6 V, b=100

    -+

    Vout

    RE

    IR

    Vin

    RB

    VCC

    RC

    VBVC

    VE

    0

    0,6 1 0,6 0,41

    400 400

    100

    (1 ) 101

    5 10 *100 4

    2 *101 0,202

    0,6 1 0,6 0,41

    400 400

    E

    in BE E inB

    B B

    C B

    R E B

    C CC C C

    E out E E

    out E E

    in BE E inB

    B B

    C

    V V

    V V V VI A

    R R K K

    I I A

    I I I A

    V V R I K V

    V V R I

    V R I K V

    V V V VI A

    R R K K

    I

    m

    b m

    b m

    m

    m

    m

    b

    100

    (1 ) 101

    5 10 *100 4

    0,6(1 ) (1 )

    (1 )

    B

    R E B

    C CC C C

    inout E E E B E

    B

    Ev

    B

    I A

    I I I A

    V V R I K V

    VV R I R I R

    R

    RA

    R

    m

    b m

    m

    b b

    b

  • 12-9-2012

    Vin=3V, Vdd=5V, Vcc=5V, VT=25mV, b2= 50 , R B=100 kW, R C=2 kW, VTHn=1V, b1=200mA/V2, R=20 kW

    VVV 6,02 g

    AKR

    VVI

    B

    inB m24

    100

    6,0322

    mAAII BC 2,124*50222 mb

    VIRVV CCcc 6,22,1*253

    AVVI thnD mb

    25616,21002

    22

    31

    1

    VRIVV Dddout 12,012,55256,0*2051

    R

    VVVVVVI outddoutoutthnD

    2

    2

    311 b VVout 89,0 AID m5,2051

    M1 sat, Q2 normale diretta

    Non in saturazione ma triodo, riprendo il circuito nellipotesi di triodo

    V2

    RB

    VCC

    RC

    V3

    Vout

    R

    Vdd

    Q2M1

    Vin

  • SVg outm mb 17889,0*200)(11

    SVVVg outthno mb 142)89,06,1(*200)( 311

    mSm

    m

    V

    Ig

    T

    cm 48

    25

    2,12 W k

    mgr

    m

    042,148

    50

    2

    22

    bp

    Rgm2 v2

    v2 vout

    vin

    gm1 v3

    RB v3

    RCrp go1

    in

    B

    vrR

    rv

    2

    22

    p

    p

    in

    B

    mBmB vrR

    rgRvgRv

    2

    22223

    p

    p

    in

    B

    mBmomoout vrR

    rgRgrRvgrRv

    2

    2211311 )||()||(

    p

    p

    918,0042,1100

    042,1482178,0)

    1142,0*20

    20()

    1(

    2

    221

    1

    kk

    kmkm

    k

    rR

    rgRg

    Rg

    RA

    B

    mCm

    o

    v

    p

    p

  • 12-9-2012 R1= R3= R5=10 k W, R2= R4= R6=20 k W, Vin1=1 V, Vin2=1 V

    R4

    R3-+

    Vout

    R6 R5

    Vin1

    Vin2

    R2

    R1

    -+ VA

    VB

    VC

    VVVR

    RRV ininA 33 22

    1

    21

    CBA VVV

    3

    1

    4 R

    VV

    R

    VV CinCout

    1

    3

    4

    3

    431

    3

    4 )( inCCinCout VR

    R

    R

    RRVVV

    R

    RVV

    1

    3

    4

    1

    21

    3

    432 ininout V

    R

    R

    R

    RR

    R

    RRVV

    VVVVVV ininininout 42610

    20

    10

    2010

    10

    20101212

  • 14-11-2012

    Vin=3V, Vdd=5V, VTHn=1V, VTHp=-1V, I0 =100mA, b1=b2=b3=200mA/V2, b4=400mA/V2.

    VxVout

    VinM1

    M4

    M2

    I0

    M3

    VDD

    M1 M2 M3 M4 sat

    2 21

    1 100 5 3 1 1002

    D DD in thpI V V V Ab

    m

    2 3 200D DI I Am

    2

    2

    22,414Dx thn

    IV V V

    b 4

    4

    23Dout DD thp

    IV V V V

    b

    1 1( ) 200m DD in thpg V V V Sb m 2 3 2( ) 282,8m m x thng g V V Sb m

    4 4( ) 400m DD out thpg V V V Sb m 1 2 3 40o o o og g g g

  • gm2

    gm4

    gm1 (-vin)

    vx

    gm3 vx

    vout

    1 3

    2 4

    m mout in

    m m

    g gv v

    g g

    0,5vA

    VxVout

    VinM1

    M4

    M2

    I0

    M3

    VDD

  • 14-11-2012 R1= R2= R3=10 k W, R4= R5= R6 k W, VA=1 V, VB=2 V

    -+

    VzVAR1

    R2

    -+

    VoutR3

    R4

    -+

    R5

    VB

    Vx

    Vy

    Vk

    2 1

    2 2

    1 1

    4 4 2 2

    3 3 1 1

    1 3

    1 2 4 6

    y B A B

    y B A

    out z B A A B

    V V V V

    R R

    R RV V V V

    R R

    R R R RV V V V V V V

    R R R R