N970003 N970011 N970012 N970019

IC

200911WSTS 20092,201200811.5%

20102,46920112,69812.2%9.3%

2008~2011 WSTS(2009/11)

1.2010

2.

1991~2113 WSTSMIC 200910 (2009/11)2010~ 2013201110%

/(B/B)1.B/B1 2.B/B1 200912 18 4 7~8

B/B SEMISEAJ 2009/10

2008~2013 Gartner Dataquest 2009/10

IC(Wired Bonding)(Flip Chip)3D SiP812(18616)PC3C SoCDRAM(16~128Mb)SDRAM(128~256Mb)DDR(256~512Mb)DDR2(512Mb~2Gb)DDR3(2Gb~)0.35um0.25um0.18um0.13um90nm65nm/45nmIC//SoC IC 3DSiPDIPQFPBGACSP

1. IC2. 3. 4.

IC

(design rule)

( Wafer Process)1. 2. 3. 4. 5. 6. / 7. 8. 9.

Wafer Probeprobepad PackagingIC

SWOT

Strength12 IC345678

Weakness123 4

Opportunity1802 ECFA

Threat123IDM

ICSWOT

IC IDM

1.IC 2.IC

1.2.

IC37

1.ICIC2.IC

IC 2005

SWOT Strength1.2.3.IDM

Weakness1.2.3.

Opportunity1.2.3.IDM

Threat1.2.(921)3.()

SWOT

IDM

12 1.1000 2. 3.

2003

SWOT Strength1.2.3.4.5.6. 7.

Weakness1.2.3.SoC4.

Opportunity1.ICSoC2.12 3.IDM4.IDM IDM5.IC

Threat1.2.IDM 3.IDM4.

SWOT

1.() 2. 3.() 4. 5.

65%~70%

2004

SWOT Strength1. 2.IDM3. 4.

Weakness1.2.(IDM)3.

Opportunity1.2. 3.4.

Threat1.2.()3.() 4.

200920092005 28646-4720062005IC

2005DRAMIC20032004 S http://www.itri.org.tw/chi/iek/ http://www.tsia.org.tw/http://proj2.moeaidb.gov.tw/idbsi/

WSTS20051991199619982001200820092008200920091991~2000CAGR15.7%2001~2007CAGR10.7%WSTSMIC2010~ 2013201110% 2008 91012B/B 20091B/B81.03200912009