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Document Number: 91021 www.vishay.comS11-0510-Rev. B, 21-Mar-11 1

This datasheet is subject to change without notice.THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH ATwww.vishay.com/doc?91000

Power MOSFET

IRF540, SiHF540

Vishay Siliconix

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• 175 °C Operating Temperature

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220AB package is universally preferred for allcommercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220AB contribute to its

wide acceptance throughout the industry.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b. VDD = 25 V, starting TJ = 25 °C, L = 440 µH, Rg = 25 , I AS = 28 A (see fig. 12).c. ISD 28 A, dI/dt 170 A/µs, VDD VDS, TJ 175 °C.d. 1.6 mm from case.

PRODUCT SUMMARY

VDS (V) 100

RDS(on) ( ) VGS = 10 V 0.077

Qg (Max.) (nC) 72

Qgs (nC) 11

Qgd (nC) 32

Configuration Single

N-Channel MOSFET

G

D

S

TO-220AB

GDS

Available

RoHS*COMPLIANT

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-freeIRF540PbF

SiHF540-E3

SnPbIRF540

SiHF540

ABSOLUTE MAXIMUM RATINGS(TC = 25 °C, unless otherwise noted)PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage VDS 100 V

Gate-Source Voltage VGS ± 20

Continuous Drain Current VGS at 10 VTC = 25 °C

ID28

A TC = 100 °C 20

Pulsed Drain Currenta IDM 110

Linear Derating Factor 1.0 W/°C

Single Pulse Avalanche Energyb E AS 230 mJ

Repetitive Avalanche Currenta I AR 28 A

Repetitive Avalanche Energya E AR 15 mJ

Maximum Power Dissipation TC = 25 °C PD 150 W

Peak Diode Recovery dV/dtc dV/dt 5.5 V/ns

Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175°C

Soldering Recommendations (Peak Temperature) for 10 s 300d

Mounting Torque 6-32 or M3 screw10 lbf · in

1.1 N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply

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www.vishay.com Document Number: 910212 S11-0510-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF540, SiHF540

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width 300 µs; duty cycle 2 %.

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient RthJA - 62

°C/WCase-to-Sink, Flat, Greased Surface RthCS 0.50 -

Maximum Junction-to-Case (Drain) RthJC - 1.0

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 100 - - V

VDS Temperature Coefficient VDS /TJ Reference to 25 °C, ID = 1 mA - 0.13 - V/°C

Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V

Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA

Zero Gate Voltage Drain Current IDSS

VDS = 100 V, VGS = 0 V - - 25µA

VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250

Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 17 A b - - 0.077

Forward Transconductance gfs VDS = 50 V, ID = 17 A b 8.7 - - S

Dynamic

Input Capacitance Ciss VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5

- 1700 -

pFOutput Capacitance Coss - 560 -

Reverse Transfer Capacitance Crss - 120 -

Total Gate Charge Qg

VGS = 10 VID = 17 A, VDS = 80 V,

see fig. 6 and 13b

- - 72

nCGate-Source Charge Qgs - - 11

Gate-Drain Charge Qgd - - 32

Turn-On Delay Time td(on)

VDD = 50 V, ID = 17 ARg = 9.1 , RD = 2.9 , see fig. 10

b

- 11 -

nsRise Time tr - 44 -

Turn-Off Delay Time td(off) - 53 -

Fall Time tf - 43 -

Internal Drain Inductance LDBetween lead,

6 mm (0.25") from

package and center of

die contact

- 4.5 -

nH

Internal Source Inductance LS - 7.5 -

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current ISMOSFET symbolshowing theintegral reversep - n junction diode

- - 28

A

Pulsed Diode Forward Currenta ISM

- - 110

Body Diode Voltage VSD TJ = 25 °C, IS = 28 A, VGS = 0 Vb - - 2.5 V

Body Diode Reverse Recovery Time trrTJ = 25 °C, IF = 17 A, dI/dt = 100 A/µs

b- 180 360 ns

Body Diode Reverse Recovery Charge Qrr - 1.3 2.8 µC

Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD )

D

S

G

S

D

G

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IRF540, SiHF540

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, TC = 175 °C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

91021_01

Bottom

Top

VGS

15 V10 V8.0 V7.0 V6.0 V5.5 V5.0 V4.5 V

20 µs Pulse WidthTC = 25 °C

4.5 V

VDS, Drain-to-Source Voltage (V)

I D , D r a i n C u r r e n t ( A )

100 101

102

101

10-1



4.5 VBottom

Top

VGS15 V10 V8.0 V7.0 V6.0 V5.5 V

5.0 V4.5 V

20 µs Pulse WidthTC = 175 °C

91021_02

100 101

102

101

10-1

20 µs Pulse WidthVDS = 50 V

102

101


VGS

, Gate-to-Source Voltage (V)

5 6 7 8 9 104

25 °C

175 °C

91021_03

ID = 17 A

VGS = 10 V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

TJ, Junction Temperature (°C)

R D S ( o n ) , D r a i n - t o - S o u r

c e O n R e s i s t a n c e

( N o r m a l i z e d )

91021_04

- 60 - 40 - 20 0 20 40 60 80 100 1 20 140 1 60 180

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IRF540, SiHF540

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

3000

2400

1800

1200

0

600

100 101

C a p a c i t a n c e ( p F )


Ciss

Crss

Coss

VGS = 0 V, f = 1 MHzCiss = Cgs + Cgd, Cds ShortedCrss = CgdCoss = Cds + Cgd

91021_05

QG, Total Gate Charge (nC)

V G S , G a t e - t o - S o u r c e V o l t a g e ( V )

20

16

12

8

0

4

0 4020 3010

ID = 17 A

VDS = 20 V

VDS = 50 V

For test circuitsee figure 13

VDS = 80 V

91021_06

706050

101

100

VSD, Source-to-Drain Voltage (V)

I S D , R e v e r s e D r a i n C u r r e n t ( A )

0.4 1.61.20.8

25 °C

150 °C

VGS = 0 V

91021_07

10-1

10 µs

100 µs

1 ms

10 ms

Operation in this area limitedby RDS(on)



TC = 25 °CTJ = 175 °CSingle Pulse

102

0.1

2

5

2

5

1

2

5

10

2 51

2 510

2 5102

2 5103

2 5104

91021_08

103

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IRF540, SiHF540

Vishay Siliconix

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10a - Switching Time Test Circuit

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case


TC, Case Temperature (°C)

5

10

15

20

25

30

25 1501251007550

91021_09

0175

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

RD

VGS

RG

D.U.T.

10 V

+-

VDS

VDD

VDS

90 %

10 %

VGS

td(on) tr td(off) tf

10

1

0.1

10-2

10-5 10-4 10-3 10-2 0.1 1 10

PDM

t1t2

t1, Rectangular Pulse Duration (s)

T h e r m a l R e s p o n s e

( Z t h J C )

Notes:1. Duty Factor, D = t1 /t22. Peak T j = PDM x ZthJC + TC

Single Pulse(Thermal Response)

0 − 0.5

0.2

0.1

0.05

0.020.01

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IRF540, SiHF540

Vishay Siliconix

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

RG

IAS

0.01 Ωtp

D.U.T

LVDS

+

-V

DD

10 V

Vary tp to obtain

required IAS

IAS

VDS

VDD

VDS

tp

600

0

100

200

300

400

500

25 1501251007550

Starting TJ, Junction Temperature (°C)

E A S , S i n g l e P u l s e E n e r g

y ( m J )

Bottom

Top

ID11 A20 A28 A

VDD = 25 V

91021_12c

175

QGS QGD

QG

VG

Charge

10 V

D.U.T.

3 mA

VGS

VDS

IG ID

0.3 µF

0.2 µF

50 kΩ

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

+

-

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IRF540, SiHF540

Vishay Siliconix

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see http://www.vishay.com/ppg?91021.

P.W.Period

dI/dt

Diode recoverydV/dt

Ripple ≤ 5 %

Body diode forward drop

Re-applied

voltage

Reverse

recovery

current

Body diode forwardcurrent

VGS = 10 V

a

ISD

Driver gate drive

D.U.T. lSD waveform

D.U.T. VDS waveform

Inductor current

D =P.W.

Period

+

-

+

+

+-

-

-

Peak Diode Recovery d V/ dt Test Circuit

VDD

• dV/dt controlled by Rg• Driver same type as D.U.T.• I

SD controlled by duty factor “D”

• D.U.T. - device under test

D.U.T.

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

Rg

Note

a. VGS

= 5 V for logic level devices

VDD

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Package Informationwww.vishay.com Vishay Siliconix

Revison: 14-Dec-15 1 Document Number: 66542

For technical questions, contact: [email protected]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TO-220-1

Note

• M* = 0.052 inches to 0.064 inches (dimension includingprotrusion), heatsink hole for HVM

M*

321

L

L ( 1 )

D

H ( 1 )

Q

Ø P

A

F

J(1)

b(1)

e(1)

e

E

bC

DIM.MILLIMETERS INCHES

MIN. MAX. MIN. MAX.

A 4.24 4.65 0.167 0.183

b 0.69 1.02 0.027 0.040

b(1) 1.14 1.78 0.045 0.070

c 0.36 0.61 0.014 0.024

D 14.33 15.85 0.564 0.624

E 9.96 10.52 0.392 0.414

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208

F 1.14 1.40 0.045 0.055

H(1) 6.10 6.71 0.240 0.264

J(1) 2.41 2.92 0.095 0.115

L 13.36 14.40 0.526 0.567

L(1) 3.33 4.04 0.131 0.159

Ø P 3.53 3.94 0.139 0.155Q 2.54 3.00 0.100 0.118

ECN: X15-0364-Rev. C, 14-Dec-15

DWG: 6031

Package Picture

A SE Xi’an

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Legal Disclaimer Noticewww.vishay.com Vishay

Revision: 02-Oct-12 1 Document Number: 91000

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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or

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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical

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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All

operating parameters, including typical parameters, must be validated for each customer application by the customer’s

technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,

including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining

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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council

of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment

(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that

all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference

to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21

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91021 540

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