A 90nm CMOS Low Noise Amplifier Using Noise

Neutralizing for 3.1-10.6GHz UWB System

指導教授：林志明 教授

級別：碩二

學生：張家瑋

Chao-Shiun Wang; Chorng-Kuang Wang;

Solid-State Circuits Conference, 2006. ESSCIRC 2006. Proceedings of the 32nd European Sept. 2006 Page(s):251 - 254

Outline

Abstract Introduction Circuit Design Experimental Results Conclusion Reference

Abstract

UWB LNA Fabricated in 90nm CMOS process NF is below 6dB Power gain is 12dB 1.2V

Introduction

UWB systems have the potential for high-speed Wireless communication

Conventional RF circuit have large chip area and high frequency noise figure degradation limit the UWB radio performance.

Circuit Design

Experimental Results

Measured NF.

Microphotograph of the LNA.

A UWB CMOS LNA has been implemented in a 90nm CMOS process.

The noise neutralizing techniques are confirmed by the theoretical analysis and the measurement results.

Conclusion

References [1] R.-C. Liu, K.-L. Deng, and H.Wang, “A 0.6–22 GHz broadband CMOS distributed amplifier,” in Proc. IEEE Radio Frequency Integrated Circuits (RFIC) Symp., June 8–10, 2003, pp. 103–106.

[2] S. Andersson, C. Svensson, and O. Drugge, "Wideband LNA for a multistandard wireless receiver in 0.18 μm CMOS," Proceedings of the 29th European Solid-State Circuits Conference, pp. 655 - 658, Sept. 2003.

[3] A. Bevilacqua and A. M. Niknejad, “An ultra-wideband CMOS LNA for 3.1 to 10.6 GHz wireless receiver,” in IEEE ISSCC Dig. Tech. Papers, 2004, pp. 382–383.

[4] Federico Bruccoleri, Eric A. M. Klumperink, and Bram Nauta, “Wide-Band CMOS Low-Noise Amplifier Exploiting Thermal Noise Canceling,” IEEE Journal of Solid-Stat Circuits, vol. 40, pp. 275 - 282, Feb. 2004.

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