film deposition part v: pvd

Xing Sheng, EE@Tsinghua

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Xing Sheng盛兴

Department of Electronic EngineeringTsinghua University

xingsheng@tsinghua.edu.cn

Film DepositionPart V: PVD

Principles of Micro- and Nanofabrication for Electronic and Photonic Devices

Xing Sheng, EE@Tsinghua

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Film Deposition

PVD: Physical Vapor DepositionCVD: Chemical Vapor Deposition

Xing Sheng, EE@Tsinghua

PVD vs. CVD

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Chemical reactionsPhysical process

Xing Sheng, EE@Tsinghua

PVD

4Evaporation (蒸发) Sputter (溅射)

Xing Sheng, EE@Tsinghua

Units 1 Pa = 1 N/m2

1 atm = 760 torr = 760 mm Hg = 1.013*105 Pa

1 bar = 105 Pa = 750 torr

1 torr = 133.3 Pa

Vacuum Basics

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Evaporation< 10-7 Pa

Sputter~ 10-1 Pa

Pressure cooker~ 1.5 atm

outer space< 10-10 Pa

Xing Sheng, EE@Tsinghua

Vacuum Systems

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vacuum ~ 10-10 Pa

MBE: Molecular Beam Epitaxy

分子束外延

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Vacuum Pumpdown

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Vacuum Pumpdown

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1. air2. water3. hydrogen

Xing Sheng, EE@Tsinghua

Evaporation

9Q: Why do we need the vacuum?

Thermal Electron Beam(Ebeam)

Pulsed Laser Deposition(PLD)

Xing Sheng, EE@Tsinghua

Evaporation

10Q: Required pressure?

Reduce the impurities (N2, O2, H2O, ...)

Prevent oxidation e.g. Cu + O2 -> CuO

Ballistic transport

molecular mean free path

pr

kT22

(Pa)

5.0(cm)

pressure

Xing Sheng, EE@Tsinghua

Mass Transport

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(Pa)

5.0(cm)

pressure

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Mass Transport

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absorption - movement - desorption

Xing Sheng, EE@Tsinghua

Evaporation Rate

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esevap PT

mAR 21083.5

Langmuir-Knudsen Theory

Revap: Evaporation rate (g/s)

As: area of sources (cm2)

m: molecular weight (g/mol)

T: temperature (K)

Pe: vapor pressure of sources (Torr) (not chamber pressure)

Xing Sheng, EE@Tsinghua

Evaporation Sources

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Xing Sheng, EE@Tsinghua

Deposition rate

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Question:1. RA : RB = ?2. RA : RC = ?

A

B

C

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Effects of Substrate Temperature

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Higher Temperature-> Larger Atom Mobility-> Larger Grain Size

Zone Model

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MBE: Molecular Beam Epitaxy

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Ultrahigh VacuumHigh Substrate TemperatureLattice Matched Substrate

High Quality, Single Crystal Films

Xing Sheng, EE@Tsinghua

Step Coverage

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Substrate rotation and heating improve step coverage

Xing Sheng, EE@Tsinghua

Challenges of Evaporation

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Materials with high melting points / low vapor pressure W, Mo, SiO2, ...

Compounds and alloys (non-stoichiometry) FeCoB alloy

TiO2 -> TiOx

Radiation damage generated by Ebeam electron beam and X-ray radiation

Poor step coverage via filling

Xing Sheng, EE@Tsinghua

Plasma (e.g. Ar) assisted transport high energy

high deposition rate

Sputter (溅射)

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Copper in Ar

Plasma

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Deposit more than one material composition control

Co-Sputter

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Xing Sheng, EE@Tsinghua

Advantages Higher pressure than evaporation

Higher deposition rate

Better uniformity and step coverage

Better stoichiometry control

Work for most materials

Disadvantages Plasma induced damages (etching)

More impurities and defects

Not good for single crystal epitaxy

Mostly polycrystalline and amorphous films

Sputter: Pros. & Cons.

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Xing Sheng, EE@Tsinghua

Sputter

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Process Parameters Type: DC, RF/AC, Magnetron, ...

Substrate temperature

Gas type (Ar, O2, N2, ...)

Chamber pressure

Sputter power

...

Control Parameters Deposition rate

Crystallinity

Film quality (defects, ...)

...

Xing Sheng, EE@Tsinghua

Sputter

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Xing Sheng, EE@Tsinghua

Thornton's Zone Model

25J. A. Thornton, Ann. Rev. Mater. Sci. 7, 239 (1977)

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Refined Zone Model

26A. Anders, Thin Solid Films 518, 4087 (2010)

Xing Sheng, EE@Tsinghua

Evaporation vs. Sputter

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Evaporation:

- higher temperature- radiation (Ebeam)- lower pressure- poor step coverage

Sputter:

- lower temperature- plasma damage- higher pressure- better step coverage

Xing Sheng, EE@Tsinghua

Step Coverage

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surface reaction ballistic transport

Xing Sheng, EE@Tsinghua

Al has good adhesion on Si and SiO2

Al has high solubility in Si

Al + SiO2 = Al2O3 + Si

Film Adhesion

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Q: How about Cu and Au?

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Film Adhesion

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solubility of metals in Si

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Film Adhesion

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Ellingham diagram

Formation of metal oxides

Xing Sheng, EE@Tsinghua

Metals like Ag and Au tend to have poor adhesion on Si and SiO2

Substrate clean

Deposit a thin (~5 nm) Ti or Cr layer for adhesion

Plasma treatment

Monolayer bonding

...

Film Adhesion

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Xing Sheng, EE@Tsinghua

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Typical Ohmic Contacts for III-V

GaAs p-GaAs Be/Au, Ti/Pt/Au, ...

n-GaAs Ge/Ni/Au, Pd/Ge, ...

GaN p-GaN Ni/Au

n-GaN Ti/Al/Au

Schottky contact Ohmic contact

Xing Sheng, EE@Tsinghua

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Thin Film Patterning

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Avoid Step Coverage

PVD instead of CVD avoid high temperature

Photoresist (PR) process negative PR preferred (Why?)

increase PR thickness

multilayer PR

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Requirements for Liftoff

Xing Sheng, EE@Tsinghua

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Focused Ion Beam (FIB) Deposition

world's smallest toilet

Etch: GaDeposition: Pt

in SEM machine