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Maurizio BoscardinLegnaro 2007
3D detectors3D detectors
Maurizio Maurizio BoscardinBoscardinFBKFBK--irstirst, , TrentoTrento
boscardiboscardi@@itcitc..itit
Maurizio BoscardinLegnaro 2007
Dividero’ la mia presentazione in due parti:
• rivelatore 3D “standard” basandomi
essenzialmente sul lavoro di Parker e Kenney e
sulla presentazioni di C. Da Via a Vertex 2006;
• rivelatore 3D “semplificato” Single-Type Column
workshop sui 3D nel febbraio 2006 a Trento: http://tredi.itc.it/
Maurizio BoscardinLegnaro 2007
3D standardPrincipio di funzionamento
Processo di fabbricazione
Caratteristiche
area morta
resistenza al danno da radiazione
velocita’
Maurizio BoscardinLegnaro 2007
“Standard” 3D detectors - concept[Parker et al. NIMA395 (1997)]
ionizing particlen-columns p-columns wafer surface
n-type substrate
Distance between n and p electrodes can be made very shortextremely radiation hard detector(low full depl. volt. and high CCE even at very high fluences)
Drawbacks: - electrodes are dead regions (or partially)- feasibility of large scale production still to be verified
carriers collectedat the same time
Maurizio BoscardinLegnaro 2007
3Dplanare
Q per MIP e’ la stessa (a parita’ di spessore)aumento della capacita’Vdepl da 70V a 10Vcolonne come area mortabordo morto da ~spessore fetta a ~distanza tra colonne
Maurizio BoscardinLegnaro 2007
3D altre possibilita’ tecnologiche
Connessioni elettrichefronte/retro
Come esempio:rivelazione di neutroni tramite 6Litalk di Uher univ. Praga a http://iworid-8.df.unipi.it/
PassantePassante ilil polisiliciopolisilicio
Riempire i fori con scintillatore
Maurizio BoscardinLegnaro 2007
3D standardPrincipio di funzionamento
Processo di fabbricazione
Caratteristiche
1. area morta
2. resistenza al danno da radiazione
3. velocita’
Maurizio BoscardinLegnaro 2007
“Standard” 3D detectors
Kenney et al. IEEE TNS, vol. 46, n. 4 (1999)
1) wafer bondingsupport wafer
detector wafer
2) n+ hole definitionand etching
resist
oxide
3) hole doping andfilling
n+ polysilicon
4) p+ hole definitionand etching
resist
5) hole doping andfilling
p+ polysilicon
6) Metal depositionand definition
metal
Rather challenging process for mass production!
Maurizio BoscardinLegnaro 2007
Keys to the technology
i. Deep RIE: capacita’ di fori profondi
ii. Wafer bonding: controllo dimensioniuscita del foro e rivelatori edgless
iii. Drogaggio tramite stato solido o gas: B2H6 (diborane), PH3(phosphine)
iv. Riempimento con polisilicio dei fori: processo LPCVD con SiH4
v. Planarizzazione della superficie
~200 micron
Maurizio BoscardinLegnaro 2007
D- RIE
Deep reactive-ion etching (DRIE) is a highly anisotropic etch process
Aspect ratio of 20:1 or more.
The Bosch process alternates repeatedly between two modes to achieve nearly vertical structures.
1. A standard, nearly isotropic plasma etch SF6
2. Deposition of a chemically inert passivation layer C4F8
Maurizio BoscardinLegnaro 2007
Wafer BondingCapacita di “saldare” tra loro due fette
una su cui realizzare il dispositivouna di supporto
varie tecniche disponibili
Per un 3D lo scopo e’: controllo foro uscitasupporto per rivelatori edgeless
Fetta di supporto
fetta processata
rivelatore
Maurizio BoscardinLegnaro 2007
0.7μm0.8μm1μmPoly0.6μm0.7μm1μmTEOS
bottonTopSurface
hole
Deposizioni ossido (TEOS) e polisilicio
Come depositare/drogare il foro ?Drogaggio da stato solidoDeposizione di ossido/polisilicio tramite LPCVD• uniformita’ di deposizione• tempo richiesto per riempire il foro
Foro da 5 micron
Poly + SiO2 deposti
supe
rfic
ietop botton
Maurizio BoscardinLegnaro 2007
3D different technological approach
• SLAC & SINTEF (Sherwood Parker) doppia colonna , riempita con poly, fori passanti
• University of Glasgowdoppia colonna con diodi Schottky
• VTT realizzato singola colonna, drogata boro, profondita’ di colonna 150-200μm
• ITC-irst •realizzato singola colonna, drogata fosforo, profondita’ di colonna 150-200μm;•In fase di realizzasione doppia colonna non passante alternata
•CNM : In fase di realizzazione doppia colonna non passante alternata
Maurizio BoscardinLegnaro 2007
3D standardPrincipio di funzionamento
Processo di fabbricazione
Caratteristiche
area morta
resistenza al danno da radiazione
velocita’
Maurizio BoscardinLegnaro 2007
3D silicon detectors were proposed in 1995 by S. Parker, and active edges in 1997 by C. Kenney.
Combine traditional VLSI processing andMEMS (Micro Electro Mechanical Systems)technology.
Both Electrodes are processed inside the detector bulk instead of being implanted on the wafer's surface.
The edge is an electrode! Dead volume at the Edge < 5 microns!
1. NIMA 395 (1997) 328 2. IEEE Trans Nucl Sci 46 (1999) 12243. IEEE Trans Nucl Sci 48 (2001) 1894. IEEE Trans Nucl Sci 485 (2001) 1629 5. IEEE Trans Nucl Sci 48 6 (2001) 2405 6. CERN Courier, Vol 43, Jan 2003, pp 23-267. NIMA 509 (2003) 86-918. NIMA 524 (2004) 236
3D silicon sensor fabricated at Stanford by J. Hasi (Brunel)
and C. Kenney (MCS)
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Maurizio BoscardinLegnaro 2007
3D standardPrincipio di funzionamento
Processo di fabbricazione
Caratteristiche
area morta
resistenza al danno da radiazione
velocita’
Maurizio BoscardinLegnaro 2007
Reasons for dead borders on standard planar technology sensors
a
b
c
d
a. space for guard ringsb. sawed edges connecting top and bottom are conductorsc. chips and cracks are also conducting and can reach inside the edgesd. the field lines bulge out, and should be kept away from b and cs
Maurizio BoscardinLegnaro 2007
Scribe line = DRIE & drogateUtilizzabile sia su rivelatori planari che 3DRichiede un substrato di supporto → wafer bonding
Processo “a bordo attivo”
Come limitare l’area morta laterale ?
support wafer oxide
sensor wafer
p n n
poxide
support wafer oxide
p n
p
n
Maurizio BoscardinLegnaro 2007
3D edge sensitivity using3D edge sensitivity using 13 13 keVkeV XX--rays at Berkeleyrays at Berkeley
Electrodes ~ 1.8% of total area
MeasurementPerformed using a2 μm beam
J. Hasi, C. Kenney,J. Morse, S. Parker
X-ray
10-90% < 5μm
X-ray micro-beam scan, in 2 µm steps, of a 3D, n bulk and edges, 181 µm thick sensor. The left electrodes are p-typeEfficiency measured in test beam ~98%
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Maurizio BoscardinLegnaro 2007
Efficiency: p and n electrodes responseEfficiency: p and n electrodes responseElectrodes area ~1.8% of total areaElectrodes area ~1.8% of total area
40% reduction in count efficiency at p40% reduction in count efficiency at p--electrodeelectrode
Cell study using 120GeVmuons (Cern X5), TelescopePrecision ~4μm.
Electrode response using 12KeV X-ray beam (ALS), beam size~ 2μm
n
n
n
n
p
n
50μm
100μm
A. Kok PhD thesis
J. Hasi, PhD thesis
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Maurizio BoscardinLegnaro 2007
3D standardPrincipio di funzionamento
Processo di fabbricazione
Caratteristiche
area morta
resistenza al danno da radiazione
velocita’
Maurizio BoscardinLegnaro 2007
0
50
100
150
200
0 1 2 3 4
Fluence = 1015 protons cm-2
Eff
ectiv
e D
rift
Len
gth
(mic
rons
)
Electric Field ( Volt/micron )
Electrons
Holes
T = -20 oC
Trapping times from Kramberger et al. NIMA 481 (2002) 100 Simulations CDV and S.Watts NIM A 501(2003) 138 (Vertex 2001)
Short collection distance (50-70 μm)High average e-field per applied VbiasParallel charge collectionAlways use full substrate thickness (MIP ~80 e-/mm)
Why is 3D radiation hardWhy is 3D radiation hard3D planar
Leff = vdriftx τtrap
Ottaviani, Canali et al.
e-
h+
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Maurizio BoscardinLegnaro 2007
0
2 10 -5
4 10 -5
6 10 -5
8 10 -5
0 .0001
0 2 10 15 4 10 1 5 6 10 1 5 8 10 1 5 1 10 16
y = -2 .0 23 4e-6 + 1 .32 9e -20x R = 0 .99 243
Cur
rent
at 2
0C fu
ll de
plet
ion
[A]
F lu en ce [n /cm 2]
α = 6 x 10-17 A /cm
Radiation hardness: macroscopic Radiation hardness: macroscopic parametersparameters and signal efficienciesand signal efficiencies
0
20
40
60
80
100
120
140
160
0 2 1015 4 1015 6 1015 8 1015 1 1016
Volta
ge F
ull D
eple
tion
[V]
Fuence [n /cm 2]
n-type startingmaterial
expected typeinversion point
-0 .01
-0 .008
-0 .006
-0 .004
-0 .002
0
0.002
-3 10 -8 -2 10 -8 -1 10 -8 0 1 10 -8 2 10 -8 3 10 -8
Am
plitu
de [V
]
T im e [s ]
8 .6 e 15 n /cm 2
5 .98e 1 5 n /cm 2
3.7e 15 n /cm 2
N O N IR R A D IA TE DC . D aV ia e t a l M arch 06
Average of~1000 pulses
IR Laser1060nm
T=-10C
bias-0 .0 0 6
-0 .0 0 5
-0 .0 0 4
-0 .0 0 3
-0 .0 0 2
-0 .0 0 1
0
0 .0 0 1
0 .0 0 2
-3 1 0 -7 -2 1 0 -7 -1 1 0 -7 0 1 1 0 -7 2 1 0 -7 3 1 0 -7
Sign
al [V
]
T im e [s ]
Gain = ~1000
Oscilloscope
20 oCno ben. ann.
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Maurizio BoscardinLegnaro 2007
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Maurizio BoscardinLegnaro 2007
Detectors Parameters
-10541210022400900280ATLAS strip
-10481094022800600285CMS pixel
2073985513500500500Diamond
-10771448018801602353D
T [C]Signal after 10years LHC at 4cm [%]
Signal after 10years LHC at 4cm [e-]
MIP charge[e-]
V bias[V]
Thickness[μm]
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Maurizio BoscardinLegnaro 2007
3D standardPrincipio di funzionamento
Processo di fabbricazione
Caratteristiche
area morta
resistenza al danno da radiazione
velocita’
Maurizio BoscardinLegnaro 2007
Short collection distance (50-70 μm)High average e-field at low VbiasParallel charge collection
speedspeed
3D planar
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0 6 rt~1ns
5ns T=300K
rt 1.5ns≈
oscilloscope trace
3D Tests in progress with a 0.13 3D Tests in progress with a 0.13 μμm CMOS m CMOS Amplifier chipAmplifier chip (designed by (designed by DepeisseDepeisse--AnelliAnelli--CERN MIC)CERN MIC)
3D Inter-electrodedistance = 50 μm
Maurizio BoscardinLegnaro 2007
Attivita’ IRST
rivelatori 3D a singola colonnaprincipio di funzionamento
Tecnologia Single Type Column
Misure
Sviluppi futuri
Maurizio BoscardinLegnaro 2007
Rivelatore 3D a singola colonna
primo passo verso un 3D
semplificare il processocolonne di un solo tipo
fori non passanti
Maurizio BoscardinLegnaro 2007
Single-Type-Column 3D detectors - concept[C. Piemonte et al NIMA 541 (2205)]
electrons are swept away by the transversal field
holes drift in the central region and diffuse towards p+ contact
Fabrication process is much simpler:• column etching and doping performed only once• holes not etched all through the wafer
n+ electrodes
Uniform p+ layer
p-type substrate
…on the way to a fully 3D device: 3D-STC
ionizing particle
n+ n+
…BUT collection mechanism is not very efficient
(see slides on signal formation)
Maurizio BoscardinLegnaro 2007
StaticStatic devicedevice simulationssimulations
null field lines!!
1) Vbias=0V 2) Vbias=2V
3) Vbias=5V 4) Vbias=20V
Depletion mechanismpitch = 80μmhole depth = 150μmsubst. hole conc. = 5e12cm-3
=>lateral full dep. volt. ~ 5Vvertical full dep. volt ~ 40V
Maurizio BoscardinLegnaro 2007
Pote
ntia
l
High subst. dopant conc. implies smaller null field region and higherelectric field.
⇒ for p-type subst. the detector works better after irradiation
Na=1e12 1/cm3
Na=5e12 1/cm3
Na=1e13 1/cm3
Na=1e12 1/cm3
Na=5e12 1/cm3
Na=1e13 1/cm3
StaticStatic devicedevice simulationssimulations (2)(2)El
ectri
c fie
ld
Profiles along the cutline
Maurizio BoscardinLegnaro 2007
Full Full chargecharge collectioncollection timetime
In the worst case of a track centered the central region, 50% of the charge is collected at t ~ 300ns
Outside this region, 50% of the charge is collected within 1ns.
1 2
34
(25,25)(20,20)(10,10)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1E-12 1E-11 1E-10 1E-09 1E-08 1E-07 1E-06 1E-05 1E-04Time (s)
Col
lect
ed c
harg
e (a
.u.)
250um_25-25250um_20-20250um_10-10
Same Vbias, different impact point
charge collectedis ¼ for interactionin the middle point
e h
250μ
m50
μm
First phaseTransversal movement
Second phaseHole vertical movement
Maurizio BoscardinLegnaro 2007
Attivita’ IRST
RIVELATORI 3D a singola colonnaprincipio di funzionamento
Tecnologia Single Type Column
Misure
Sviluppi futuri
Maurizio BoscardinLegnaro 2007
Processo 3D STC
ossidazionedefinizione e drogaggio p-stopdrogaggio contatti di substrato (retro)ossidazione
Maurizio BoscardinLegnaro 2007
definizione “colonne”attacco DEEP-RIE
Processo 3D STC
Maurizio BoscardinLegnaro 2007
Drogaggio “colonne”“allargamento” colonna Diffusione da sorgente solidaDeposizione polisilicio e successivo drogaggio
Ossidazione ColonnePossibile deposizione ossido/nitruroOssido termico
Processo 3D STC
Maurizio BoscardinLegnaro 2007
Definizione e apertura contattiDeposizione metal fronteDefinizione metal fronteDeposizione metal retro
Processo 3D STC
Maurizio BoscardinLegnaro 2007
3D process3D process
n+ diffusion
contact
metaloxide
hole
Hole etching with Deep-RIE technologyWide superficial n+ diffusion in which the contact is locatedPassivation of holes with oxide
hole
hole metal strip
Si High Resistivity, p-type, <100>Surface isolation: p-stop or p-sprayHoles are “empty”
performed @ IRST
Hole depth 120-150μHole diameter ~10μm
Maurizio BoscardinLegnaro 2007
ColumnColumn etchingetchingSo far, 3 runs have been fabricated:2 runs holes etched by CNM (Barcelona);1 run holes etched by a company providing microtechnology services;
Important, in both cases:- same column parameters;- extremely good process yield (leakage current).
Furthermore, etching test have been performed with a third provider, again, with good results.
column etching and treatment are not
critical200μ
m
220μ
m
Etched through
waferthickness
D-RIE equipment will be available at IRST in september 2007
Maurizio BoscardinLegnaro 2007
MaskMask layoutlayout
“Short” strip detectors~ 0.8x5mm2 64 strips10 col./strip
Planar and 3D teststructures
1. “Low density layout” to increase mechanical robustness of the wafer
2. Strip detector = “easy” to (electrically) test
“Long” strip-like detectors~ 2x0.5cm2 64strips~230 col./strip
Maurizio BoscardinLegnaro 2007
metal
p-stop
hole
Contact opening
n+
Inner guard ring (bias line)
Different strip-detector layouts:• Number of columns from 12000 to 15000 • Inter-columns pitch 80-100 μm• Holes Ø 6 or 10 μm
Strip Strip DetectorsDetectors –– layoutlayout
Maurizio BoscardinLegnaro 2007
Full Full depletiondepletion evaluationevaluation in 3Din 3D--stcstc
From 1/C2 curves one can determine:• full depletion between columns (in this case ~5V for 80μm col. pitch)• full depletion of the bottom region (~35V for col depth of 150μm)
0.0
1.0
2.0
3.0
4.0
5.0
0 10 20 30 40 50 60Bias Voltage (V)
C^-
2 (p
F-2)
pitch=80umpitch=80um simulation
1/Cback2 characteristic
Phase 1
Phase 2
• high Cback• ~ zero Cint
• max Cint• slowly dec.
Cback
undepleted Si
undepleted Si
Phas
e 1 Phase 2
matrix of10x10 holes
guard ring
3D diode
BackCbackTot CintTot
f=10kHz
Maurizio BoscardinLegnaro 2007
LeakageLeakage currentcurrent & & yieldyield
• Low leakage current• Good process yield
1.0E-10
1.0E-09
1.0E-08
1.0E-07
1.0E-06
1.0E-05
0 50 100 150 200Vbias [V]
I leak
[A]
p-spray
p-stop
Bias line
Guard ring
Measured more than 100 devices 90% showingcharacteristics similar to those reported in the plot
Measurement on “long” strips (area about 1cm2)
Examples of IV curves
• Number of columns per detector: 12000 – 15000
⇒ Average leakage current < 1pA/column
• Increase of current caused by surface effects. No guard rings were implemented.
Maurizio BoscardinLegnaro 2007
Attivita’ IRST
RIVELATORI 3D a singola colonnaprincipio di funzionamento
Tecnologia Single Type Column
Misure
Sviluppi futuri
Maurizio BoscardinLegnaro 2007
On On goinggoing activityactivity
SCIPP (USA): CCE measurements on large strips
INFN Florence (Italy): CCE meas with β, on 3D diodes;
University of Freiburg (D); measurements on short strips
Ljubljana: TCT and neutron irradiation
Maurizio BoscardinLegnaro 2007
MeasuredMeasured currentcurrent signalsignal in 3Din 3D--stcstc
DEVICES: small strip detectors
SETUP:• IR laser (m.i.p. simulation) – beam diameter in the silicon FWHM~7 μm• Width of light pulses ~ 1ns , repetition rate 100 Hz • 3 independent channels – fast current amplifiers 1kHz-2GHz
Study performed in Ljubljana. See Kramberger’s talk at 8th RD50 workshop: http://rd50.web.cern.ch/rd50/
3D-stc DC coupled detector(64 x 10 columns)80 μm pitch80 μm between holes10 μm hole diameter
Maurizio BoscardinLegnaro 2007
MeasuredMeasured currentcurrent signalsignal in 3Din 3D--stc (2)stc (2)
beam position
signal induced on the central strip
beam position
signal induced on the central strip
50ns0 50ns0
very fast component +long tail due to driftof holes
bipolar with high fast component (non collecting electrode)
Measurements well reproduce the simulations previously reported!More work has to be done, above all on irradiated detectors.
Many data available! Two examples shown below.
Maurizio BoscardinLegnaro 2007
RadiationRadiation damagedamage studiesstudies 11
Irradiation: neutrons at TRIGA research reactor in Ljubljana;6 fluences between 5e13n/cm2 and 5e15n/cm2
Annealing: 15 days at RT (~ minimum depletion voltage).
Measurements: IV and CV (series model @10kHz) @ 23C
Aim: study of the depletion characteristic (at the moment)
[performed in collaboration with V. Cindro, Ljubljana]
Devices: 3D diodes, p-type FZ 525μm thick substrate,p-stop isolation& planar diodes with same subst. characteristics.
Maurizio BoscardinLegnaro 2007
RadiationRadiation damagedamage studiesstudies 22
1.E-11
1.E-10
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
0 50 100 150 200 250 300Vrev (V)
Idio
de (A
)
n-irrad 3D diodes (D2)
before irradiation
F1…F6 1) 3D Diode current(80μm pitch)
Normal current behavior:current increases with fluence
2) CV measurementsdifficult measurement as it depends ofrequency and model (series/parallel)⇒ we look only for kinks in the
CV related to full lateral depletion
Conc ~ 1/d(1/Cback2)/dV)1.0E+12
1.0E+13
1.0E+14
1.0E+15
1.0E+16
0 50 100 150 200Voltage [V]
Con
c [c
m-3
]
n-irradiated 3D diodesn-irradiated 3D diodes
F1F2
F3F4
F5 F6
80μm pitch100μm pitch
Maurizio BoscardinLegnaro 2007
RadiationRadiation damagedamage studiesstudies 33
Simulating the full lateral depletion voltage with Nsubestimated from equation (*) we obtain values comparable with those reported on the plot.
ΔNeff=β*Φβ=0.021cm-1
see Cindro’s talk at 8th RD50 workshop: http://rd50.web.cern.ch/rd50/
(*)
40/50μm 40/50μm1
10
100
1000
10000
1.0E+13 1.0E+14 1.0E+15 1.0E+16Fluence (n/cm 2̂)
Dep
letio
n V
olta
ge (V
)
col. pitch = 80um
col. pitch = 100um
expected from planardiode300μm
lateral depletion
each column depletes half col. Pitchthe lateral depletion voltage is very low
Maurizio BoscardinLegnaro 2007
CCE CCE withwith β β particlesparticlesINFN Firenze & SCIPPINFN Firenze & SCIPP
Charge Collection Efficiency
3D diode, 80 µm pitch between columnsFZ substrate 500 µm thick
Measurement system:• β- source with scintillator/PMT trigger• AMPTEK read-out electronics:
- Shaping time: 250ns - ENC ≈ 500 e-
Good correlation between CCE and C-V measurements
0 10 20 30 40 500,2
0,4
0,6
0,8
1,0
1,2
norm
CC
E an
d 1/
C
Reverse Voltage [V]
CCE 1/C
3D diode, 80 µm pitch between columnsCZ substrate 300 µm thick (VFD ~ 35V)
http://scipp.ucsc.edu/STD6/abstracts/sadrozinski.pdf
Maurizio BoscardinLegnaro 2007
Laser Resultsunirradiated
channel 262
channel 261Lateral depletion around 12V
x
y
Penetration depth @ 982nm ≈ 100µmLength of pulse ≈ 1-2nsMicroscope to focus optically → laser spot Ø ≈ 4–5µmx-y stages with µm resolution
Simon Eckert, Friburg University presented at VCI Vienna 2007
Maurizio BoscardinLegnaro 2007
Post-Irradiation: CCE @ 130V
Sum of both strips:
Irradiated with 26MeV protons dose 1015Neq/cm2
low CCE under p-stops – as before irradiation
Low field regionor trapping?
Sign
al in
mVlef
t srip
right s
trip
Simon Eckert, Friburg University presented at VCI Vienna 2007
Maurizio BoscardinLegnaro 2007
Post-IrradiationUsing a smaller step-size you can nicely see how the depleted region is growing with increasing bias voltage
Vbias = 130V Vbias = 65V
Vbias = 32V
Sign
al in
mV
Sign
al in
mV
Sign
al in
mV
Simon Eckert, Friburg University presented at VCI Vienna 2007
Maurizio BoscardinLegnaro 2007
Attivita’ IRST
RIVELATORI 3D a singola colonnaprincipio di funzionamento
Tecnologia Single Type Column
Misure
Sviluppi futuri
Maurizio BoscardinLegnaro 2007
Next technological steps
First Process• p-type Si• DRIE ~ 200mm• no hole filling• single column• single side
New Process• n-type Si• DRIE ~ 250mm• no hole filling• double columns• double side
Maurizio BoscardinLegnaro 2007
New Layout
First Layoutmicrostrip
New LayoutPixel like
p-diff n-diff
bump regionmetal
Maurizio BoscardinLegnaro 2007
• 3D p-on-n• ALICE and MEDIPIX pixel layout
• Strip detectors
• Test structures
•3D n-on-p• ATLAS and CMS pixel layout
• Strip detectors
• Test structures
On going 3D-DTC processes
Bulk contact junction columns
Maurizio BoscardinLegnaro 2007
3D – dtc227.02.2007
6 ATLA
S pixel detectors
planar test structures (8)
3D diodes (stc&dtc; 80&100µm)
single-columnstest strucures (8)
6 CMS pixel detectors
16 ATLA
S pixel detectors
13 microstrip
detectors (stc& dtc)
+ 1 strip CAP test
3D diodes (stc&dtc; 80&100µm)
CMS “small” pixel detectors (8)
Maurizio BoscardinLegnaro 2007
Conclusioni
• Rivelatori 3D hanno dimostrato caratteristiche promettentiper un utilizzo nei rivelatori di vertice - in particolare per quantoriguarda la resistenza al danno da radiazione -
E’ importante ora continuare questo sviluppo sia• Tecnologico (yield, …)• Caratterizzazione ( dipendenza del segnale dalla posizione,..)
Interesse da parte di ATLAS per uno sviluppo di rivelatori 3D in vista di una sostituzione ( e up-grading) del b-layerhttp://test-3dsensor.web.cern.ch/test-3dsensor/Default.htm
Maurizio BoscardinLegnaro 2007
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