n-channel 600 v, 0.35 typ., 11 a mdmesh ii plus low qg ... · symbol parameter test conditions min....
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This is information on a product in full production.
March 2014 DocID023939 Rev 4 1/14
14
STF13N60M2, STFI13N60M2
N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Qg
Power MOSFETs in TO-220FP and I2PAKFP packages
Datasheet − production data
Figure 1. Internal schematic diagram
Features
• Extremely low gate charge
• Lower RDS(on)
x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications• Switching applications
DescriptionThese devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
AM15572v1
TO-220FPI2PAKFP
1
2
3
12
3
(TO-281)
Order codes VDS @ TJmax RDS(on) max ID
STF13N60M2
650 V 0.38 Ω 11 A
STFI13N60M2
Table 1. Device summary
Order codes Marking Package Packaging
STF13N60M2
13N60M2
TO-220FP
Tube
STFI13N60M2 I2PAKFP (TO-281)
www.st.com
Contents STF13N60M2, STFI13N60M2
2/14 DocID023939 Rev 4
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
DocID023939 Rev 4 3/14
STF13N60M2, STFI13N60M2 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VGS
Gate-source voltage ± 25 V
ID
Drain current (continuous) at TC
= 25 °C 11 (1)
1. Limited by maximum junction temperature.
A
ID
Drain current (continuous) at TC
= 100 °C 7 (1)
A
IDM
(2)
2. Pulse width limited by safe operating area.
Drain current (pulsed) 44 (1)
A
PTOT
Total dissipation at TC
= 25 °C 25 W
dv/dt (3)
3. ISD
≤ 11 A, di/dt ≤ 400 A/μs; VDS
peak
< V(BR)DSS
, VDD
=400 V.
Peak diode recovery voltage slope 15 V/ns
dv/dt(4)
4. VDS
≤ 480 V
MOSFET dv/dt ruggedness 50 V/ns
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s; TC = 25 °C)
2500 V
Tstg
Storage temperature
- 55 to 150 °C
Tj
Max. operating junction temperature
Table 3. Thermal data
Symbol Parameter Value Unit
Rthj-case
Thermal resistance junction-case max 5 °C/W
Rthj-amb
Thermal resistance junction-ambient max 62.5 °C/W
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
IAR
Avalanche current, repetetive or not
repetetive (pulse width limited by Tjmax
)
2.8 A
EAS
Single pulse avalanche energy (starting
Tj=25°C, I
D= I
AR; V
DD=50)
125 mJ
Electrical characteristics STF13N60M2, STFI13N60M2
4/14 DocID023939 Rev 4
2 Electrical characteristics
(TC
= 25 °C unless otherwise specified)
Table 5. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source
breakdown voltage
ID
= 1 mA, VGS
= 0 600 V
IDSS
Zero gate voltage
drain current (VGS
= 0)
VDS
= 600 V
VDS
= 600 V, TC
=125 °C
1
100
μA
μA
IGSS
Gate-body leakage
current (VDS
= 0)
VGS
= ± 25 V ±10 μA
VGS(th)
Gate threshold voltage VDS
= VGS
, ID
= 250 μA 2 3 4 V
RDS(on)
Static drain-source
on-resistance
VGS
= 10 V, ID
= 5.5 A 0.35 0.38 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss
Input capacitance
VDS
= 100 V, f = 1 MHz,
VGS
= 0
- 580 - pF
Coss
Output capacitance - 32 - pF
Crss
Reverse transfer
capacitance
- 1.1 - pF
Coss eq.
(1)
1. Coss eq.
is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VDS
= 0 to 480 V, VGS
= 0 - 120 - pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain - 6.6 - Ω
Qg
Total gate charge
VDD
= 480 V, ID
= 11 A,
VGS
= 10 V (see Figure 15)
- 17 - nC
Qgs
Gate-source charge - 2.5 - nC
Qgd
Gate-drain charge - 9 - nC
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on)
Turn-on delay time
VDD
= 300 V, ID
= 5.5 A,
RG
= 4.7 Ω, VGS
= 10 V
(see Figure 14 and 19)
- 11 - ns
tr
Rise time - 10 - ns
td(off)
Turn-off delay time - 41 - ns
tf
Fall time - 9.5 - ns
DocID023939 Rev 4 5/14
STF13N60M2, STFI13N60M2 Electrical characteristics
Table 8. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD
Source-drain current - 11 A
ISDM
(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) - 44 A
VSD
(2)
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Forward on voltage ISD
= 11 A, VGS
= 0 - 1.6 V
trr
Reverse recovery time
ISD
= 11 A, di/dt = 100 A/μs
VDD
= 60 V (see Figure 16)
- 297 ns
Qrr
Reverse recovery charge - 2.8 μC
IRRM
Reverse recovery current - 18.5 A
trr
Reverse recovery timeISD
= 11 A, di/dt = 100 A/μs
VDD
= 60 V, Tj=150 °C
(see Figure 16)
- 394 ns
Qrr
Reverse recovery charge - 3.8 μC
IRRM
Reverse recovery current - 19 A
Electrical characteristics STF13N60M2, STFI13N60M2
6/14 DocID023939 Rev 4
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
ID
1
0.1
0.1 1 100 VDS(V)10
(A)
Operat
ion in
this
area i
s
Limite
d by m
ax R
DS(on)
10ms1ms
0.01
Tj=150°CTc=25°CSingle pulse
100 µS
10µs
10
AM15735v1
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Normalized V(BR)DSS vs temperature Figure 7. Static drain-source on-resistance
ID
12
8
4
00 8 VDS(V)
(A)
4 12
16
4V
5V
6V
VGS=7, 8, 9, 10V
16
20
AM15712v1ID
4
00 4 VGS(V)8
(A)
2 6
8
12
VDS=18V
16
20
AM15713v1
V(BR)DSS
-50 TJ(°C)
(norm)
00.9
0.94
0.98
1.02
1.06
ID=1 mA
50 100
1.1
AM15714v1RDS(on)
0.360
0.350
0.340
0.3300 4 ID(A)
(Ω)
2 6
0.370
8 10
VGS=10V
AM15715v1
DocID023939 Rev 4 7/14
STF13N60M2, STFI13N60M2 Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage vs temperature
Figure 11. Normalized on-resistance vs temperature
Figure 12. Source-drain diode forward characteristics
Figure 13. Output capacitance stored energy
VGS
6
4
2
00 Qg(nC)
(V)
8
8
4
10VDD=480V
300
200
100
0
400
VDS
12 16
500
VDS(V)
ID=11A
AM15716v1 C
10
1
0.10.1 10 VDS(V)
(pF)
1 100
Ciss
Coss
Crss
100
1000
AM15717v1
VGS(th)
0.9
0.8
0.7
0.6TJ(°C)
(norm)
-50
1.0
ID=250µA
0 50 100
1.1
AM15718v1 RDS(on)
2.1
1.7
1.3
0.9
TJ(°C)
(norm)
0.5-50 0 50 100
ID=5.5 AVGS=10V
AM15719v1
VSD
0 4 ISD(A)
(V)
2 106 80.5
0.6
0.7
0.8
TJ=-50°C
TJ=150°C
TJ=25°C0.9
1
AM15720v1Eoss
0 VDS(V)
(µJ)
200100 5000
1
2
3
4
300 400
AM15721v1
Test circuits STF13N60M2, STFI13N60M2
8/14 DocID023939 Rev 4
3 Test circuits
Figure 14. Switching times test circuit for resistive load
Figure 15. Gate charge test circuit
Figure 16. Test circuit for inductive load switching and diode recovery times
Figure 17. Unclamped inductive load test circuit
Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF3.3μF
VDD
AM01469v1
VDD
47kΩ 1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200μF
PW
IG=CONST100Ω
100nF
D.U.T.
VG
AM01470v1
AD
D.U.T.
SB
G
25 Ω
A A
BB
RG
G
FASTDIODE
D
S
L=100μH
μF3.3 1000
μF VDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200μF
3.3μF VDD
AM01472v1
V(BR)DSS
VDDVDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tftr
90%
10%
10%
0
0
90%
90%
10%
VGS
DocID023939 Rev 4 9/14
STF13N60M2, STFI13N60M2 Package mechanical data
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK®
is an ST trademark.
Package mechanical data STF13N60M2, STFI13N60M2
10/14 DocID023939 Rev 4
Figure 20. TO-220FP drawing
7012510_Rev_K_B
DocID023939 Rev 4 11/14
STF13N60M2, STFI13N60M2 Package mechanical data
Table 9. TO-220FP mechanical data
Dim.mm
Min. Typ. Max.
A 4.4 4.6
B 2.5 2.7
D 2.5 2.75
E 0.45 0.7
F 0.75 1
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2
Package mechanical data STF13N60M2, STFI13N60M2
12/14 DocID023939 Rev 4
Figure 21. I2PAKFP (TO-281) drawing
Table 10. I2PAKFP (TO-281) mechanical data
Dim.mm
Min. Typ. Max.
A 4.40
-
4.60
B 2.50 2.70
D 2.50 2.75
D1 0.65 0.85
E 0.45 0.70
F 0.75 1.00
F1 1.20
G 4.95 5.20
H 10.00 10.40
L1 21.00 23.00
L2 13.20 14.10
L3 10.55 10.85
L4 2.70 3.20
L5 0.85 1.25
L6 7.30 7.50
DocID023939 Rev 4 13/14
STF13N60M2, STFI13N60M2 Revision history
5 Revision history
Table 11. Document revision history
Date Revision Changes
18-Dec-2012 1 First release.
17-Apr-2013 2
– Added: note 4 on Table 2– Modified: I
D value on Table 2, I
AR, I
AS on Table 4, R
DS(on) on
Table 5– Updated: typical values for Table 6, 7 and 8– Modified: Figure 1
21-Jun-2013 3
– Document status promoted from preliminary data to production
data
– Minor text changes
03-Mar-2014 4
– Modified: Figure 11– Minor text changes
STF13N60M2, STFI13N60M2
14/14 DocID023939 Rev 4
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