oled 구조 및 구동원리display.donga.ac.kr/강의자료/2016학년도 1학기...
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kykim@lge.com
OLED Business TeamDigital Display Company
LG Electronics Inc.
OLED
2006. 02. 08
20.1, 1280X800, AMOLEDLPL/LGE, 2004
(2006 2 FPD )
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- OLED - OLED Display - (Panel Module) -
Contents
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from IEC/TC 110/PT 62341, Terminology and letter symbols
Terminology
3.1.28organic electroluminescenceemission of light from organic materials by injecting current 3.1.29organic electroluminescent displaydisplay showing visual information in which organic electroluminescence occurs3.1.30organic light emitting diodelight emitting device in which light is emitted from organic materials, possessing properties of diode3.1.31organic light emitting diode displaydisplay showing visual information in which organic light emitting diode is applied3.1.32organic light emitting diode display devicegeneric term for organic light emitting diode display panel and organic light emitting diode display module3.1.33organic light emitting diode display moduleorganic light emitting diode display panel and its driving electronics3.1.34organic light emitting diode (display) paneldisplay panel of an organic light emitting diode display without external drivers
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OLED
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ITO
HIL
HTL
ETL
EIL
EML
Al
Exciton
+
(ITO)
(HIL)
(HTL)
(EML)
(ETL)
(EIL)
OLED Mechanism
Conduction Band (LUMO)
Valence Band (HOMO)
LUMO : Lowest Unoccupied Molecular OrbitalHOMO : Highest Occupied Molecular Orbital
ITO : Indium Tin OxideHIL : Hole Injection LayerHTL : Hole Transport LayerEML : Emitting LayerETL : Electron Transport LayerEIL : Electron Injection Layer
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exciton
or
Triplets
Singlet
>>>( >+ )
>( >- )
hole electron
21 21
Charge
transfer
&
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Emission Mechanism
Singlet Exciton
Electron - hole
Triplet Exciton
h Phosphorescence(, ~1sec)Fluorescence(, ~nsec)
Charg
e sep
aratio
nCh
arge r
ecom
binati
on
Charge separation(Photoconductivity)
Charge injection
Intersystemcrossing
Thermaldeactivation
Ground State
25% 75%
Thermaldeactivation
h
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Emission Mechanism
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Power efficiency (unit: /W)
power = r PL V() ext
where : charge balancing factor (~100%)r : fraction of neutral excited states formed as singlet
excitons via the electrical current ( 25%, 100%)
PL : photoluminescence (PL) quantum efficiency, the fraction of energy released from fluorescent or phosphorescent material as light (~100%)
V() : eye response curve (At peak visual response 555nm, 1W=683lm)
ext : the fraction of emitted photons that are coupled out of the device. ~1/ (2n2) (
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( : n =1.46 )
( ITO: n = 1.8 ~ 2.1)
( n ~ 1.7)
cathode51% waveguided
31.5% waveguided or emitted from sides
17.5% coupled out
Out-coupling
Internal QE
External QE
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Emission Efficiency of OLED
External quantum efficiency(ext)Max. ext = rs qf coupling = 5%
Charge injection & transfer
e-h Pair(Exciton) formation()Max. = 100%
Singlet Exciton formation(rs)Max. rs = 25%
Triplet Exciton formation (rt) Max. rt + Max. rs = 75% + 25% = 100%
Fluorescence Emission(qf)Max. qf = 100%
Phosphorescence Emission (qp)Max. qp = 100%
Optical Coupling(coupling)coupling = 20%
Optical Coupling(coupling)coupling = 20%
External quantum efficiency(ext)Max. ext = rt qpcoupling = 20%
O
X
Flourescence
G: 19%R: 7%B: 5~6%
Phosphorescence
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OLED Display
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OLED Panel Structure : PM, Bottom Emission
Anode(ITO)
Cathode(metal)
(Cathode
Separator)
Glass Substrate
(Insulator)
Getter
(ETL)
(EML)
(HTL)
(HIL)
(EIL)
Sealant
RGB(Full Color)
Encap-sulation
Cathode
Separator
Organic EL
ITO
Glass
Polarizer
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(ETL)
(EML)
(HTL)
Anode
Cathode
-
+
-+
: 100 ~ 200 nm
Exciton
Lightoutput
OLED Device Materials
(from KETI, 2005)
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N
O
N
OAl
O
N
NN
DNTPD(HIL) Alq3(ETL)-NPD(HTL)
mQD (Green)DCJTB(Red) DPVBi(Blue)
N
N
N
N
O
N
CNNC
N O
S
N
O
Organic Materials
UV UV UV
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25%
100%
Fluorescence & Phosphorescence Emitter
Singlet Exciton Max. s = 25%
( & )
- Pair(Exciton) ()Max. = 100%
Singlet/Triplet Exciton Max. (s + t)=25% +75% =100%
(Fluorescence) (Phosphorescence)
4 R, G .
GroundState
S0
S1
SingletExcitedState
T1
TripletExcitedState
SingletExciton
h()
S0
S1T1
TripletExciton
h()
h()
SingletExciton
ThermalDecay
Radiative Non-radiative Radiative Radiative
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()( & )
Fast decay time(
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Efficiency(lm/W)
RedPh. 6.6
Green
Ph. 15.5
BluePh.
Life time(hr)(@ Full White 100 nit)
13,000(@ 520 nit/pixel)
4,000(@ 960 nit/pixel)
Comparison of power consumption in Ph. & Fl.
2.0Fl. 46,700(@ 520 nit/pixel)
5.9Fl. 32,000(@ 960 nit/pixel)
Fl.
300(@ 390 nit./pixel)
11,000(@ 390 nit./pixel)
3.1
2.6
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- EML Dopant : Ir based metal complex- Hole Blocking Layer(HBL) - Identical charge transfer layer with flourescence emiier
NIr
3
Ir(ppy)3
NN
HIL(CuPc)
NNCH3H3C
Device ITO/CuPc/NPD/CBP+Dopant/BAlq/Alq3/Cathode(B:MgAg, RG:LiF/Al) -
HBLBCP Data . BAlq
NO
AlN
O
NO
NCu
N
N
NNN
N
N
N N
CBP
BAlq
Green Ir(ppy)3 (ppy)2Ir(acac) Red HTL, ETL Codep. Red PtOEP(x=0.71, y=0.29, ext=2.2%, 70 cd/m2) (btp)2Ir(acac) Blue
(btp)2Ir (acac) Firpic
N
Ir
NO O
N
F
F
F
F2
N
IrO
O
(ppy)2Ir (acac)
NOAl
ON O
S
N
IrO
O
2
HTL(NPD) HBL ETL(Alq3)
BCP
Host G Dopant R Dopant B Dopant
Phosphorescence Emitter
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(Panel Module)
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OLED Process(PM)
R/G/B source
Evaporation Loading
PLASMA
O2
Plasma
Seal Sealing Canister Getter
TAB Pol Cell Cell Aging
Encap.
PHOTO&
ETCHINGITO sputtering ITO patterning Metal patterning
UV
AM AM
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ModuleFactory
INPUTAM TFT
EL HIL, HTL, RGB EML
ETL (shadow mask)
Al Encapsulation
sealing
SCRIBE &BREAKING
Cutting the combined glassinto screen units
FINALINSPECTION
Inspecting the TFT panel while regular display signal is applied
OLED Process (AM)
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ITO Strip(anode)
Buffer Layer
Metal Strip(Cathode)
Separator()
Patterning
Photo Encap.
Cathode(Al) Patterning ,
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PRINCIPLE O2, Ar Gas RF Power Plasma , .
RAW MATERIALO2, Ar Gas
TARGETITO Work Function OELD Device .
Plasma Treatment
PLASMA
Gas RF
Pre-treatment
PRINCIPLEO2 Gas UV Ozone ().
RAW MATERIALO2, UV Lamp
TARGET Device .
UV Cleaning
O2
UV
Photo Encap.
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Evaporation
PRINCIPLE Termally Heating .
RAW MATERIALAlq3, R/G/B dopant, CuPc, -NPD, LiF, Al
APPLYING PROCESS, Metal .
Thermal Evaporation
Organicmaterial
Crucible
Cold trap
Shutter
GlassSubstrate
PRINCIPLEMagnetic Field Electron Beam .
RAW MATERIALLiF, Al
APPLYING PROCESS, Metal .
E-beam Evaporation
Vacuum Pump
GlassSubstrate
ElectronBeam
ElectronBeam Source
Crucible
Ingot Rod
MoltenPool
FluxProfile
Photo Encap.
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OLED Pixellation : Full Color
CCM C/F ,CCM
Color filter white 1/3
Differential degra., R,G,B
, display
, display
, display
Application
,R,G,B shadow mask
R,G,B shadow mask ,
()
(C/F )
( )
(Color Satu.)
Color ChangeMedium (CCM)
White + Color Filter
Side-by-SideDeposition
GR
B B B
B
R G B
GR B
Photo Encap.
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--
--- Patterning
- 370x400mm - 550x650 for C/F
LITI
--
- Shadow mask * 730x920 Glass 100~130 ppi(Max. 40 inch Wide)* < 23m
--
- OLED -
- 370x470mm - 2,000x2,000 (for C/F)
Ink-Jet
- 370x470mm (Max. 20.1 inch Display)
- 730x920
Thermal Evaporation(Shadow Mask)
OLED Photo Encap.
(LITI: Laser Induced Thermal Imaging)
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SDI, KDC 2005
Photo Encap.
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Thin Film Encapsulation
TFT- LCD
GlassTFT GlassBack Light
20 grams
5 mm
10%
$18.00
20 grams
5 mm
10%
WeightThicknessBreakage
Cost
OLED
GlassTFT Glass
Flexible OLED
Flexible TFT Glass
2010
OLED
TFT Glass
2005
5mm
0.2mm
Photo Encap.
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Encapsulation Panel , Panel .
Aging
O/S
Probe TEST
Cleaning
Breaking
Pol.
Cell .
Panel .
Glass Cell Crack .
Scribing Glass
Polarizer Chip .
, Film .
Scribing
Panel Pad , Line, Open/ Short .
Photo Encap.
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Line Fail?
Pixel - Short Panel .
- Pixel (Anode, ITO) : Data Line
- Pixel (Cathode, Al) : Scan Line
Line Fail Aging
Data Line ( m )
Scan Line (n-1)
Scan Line ( n )
Scan Line (n+1)
Line Fail Short PixelH
H
L
Driver IC Short Pixel Scan Line High Voltage
Scan Line n+1 Select
Scan Line n Select
Line Fail
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Glass View Polarizer .
Panel Polarizer Align .
* Protecting Film
* Polarizer Panel AttachingAttaching
Alignment Alignment
Function of PolarizerFunction
of Polarizer
Polarizer ,
.
Light Source
InterceptTransmit
polarizer
Polarizer Attachment
SUCTION BLOCK
Pol
Photo Encap.
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Circular Polarizer Photo Encap. : Contrast Ratio
: Panel (50% )
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TAB
Panel Module ACF PanelPAD
Panel ACF COF Panel Pad .
ACF
Panel module Pattern .
Seal/Tape TAB Seal Tape .
Case Set EL , Case Panel .
// , .
Photo Encap.
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Module Process
1. Module
; SET .
) LCD Monitor LCD Module. Hand Phone STN LCD Module
2. OLED Module
OEL Panel
Driver/ControllerIC
FPC
FPC : Driver/Controller IC Panel PCB
Driver IC : Panel IC( Scan Data )
Controller IC : Driver IC MPU Data IC
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OLED PanelOLED Panel
Data IC
Data IC
Scan IC
Inter-face
&DC/DC
Conv-erter
Controller
R,G,B Data
R,G,B Data
Synch./ Control Signal/ Power
Synch./ Control Signal/ Power
Synch./ControlSignal
R,G,BData
Memory
Data
Power
CPU
Data/Synch.
---- General Module -------- Extended Module ----
:::
:::
Frame, CLK..
Module Block Diagram
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1. Module
1) TAB (Tape automatic bonding) : Film Interface Drive IC .
2) COG (Chip On Glass) : LCD Glass IC .
3) COF (Chip On FPC) : LCD Interface FPC IC .
4) COB (Chip On Board) : Main Board Control PCB PCB
5) OLB(Out Lead Bonding)
; FPC TCP Panel ACF
6) SMT(Soldering Mount Technique)
; FPC PCB
7) Module Assembly (Module )
; COF, OLB, SMT Module
2. Module
OLED Module
COF or TCP
OLED PanelOLB FOB
PCB
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FOG
Sub-Unit Sub-KIT
++ FOB
OLED Product Assembly Process
+
ILB
+
SMT
Bare PCB
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(PM, AM)
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OLED Display
I [A/cm2]
L [Cd/m2]
Approximate linear relationship between light intensity vs. current density.
Easy gray scale realization with current control. Vmin
Voltage
Current
Imax
IminVmax
I-V characteristics like a diode
OELCPIXEL
Circuit model
Opto-Electrical characteristics
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OLED
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Cathode
Organicfilm
AnodeGlasssubstrate
Glasssubstrate
TFT
OLED
Matrix EL device
Line Emission
Passive Matrix (PM) Active Matrix (AM)
Matrix EL TFT
Frame time Emission
1)
1) TFT : Thin Film Transistor
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Passive Matrix
Scan 1
Scan 2
Scan 3
Scan 4
Data 1
Data 2
Data 3
Data 4
t1 t2 t3 t4 t5
Data 5
Data 6
Scan Line , Data Line Pixel
Data
1 2 3 4 5 6
Scan
1
2
3
4
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Passive Matrix OLEDs Requires cathode patterning High pulsed drive currents (proportional to row counts) Higher drive voltage than active matrix display Higher power consumption Shorted pixels result in cross-talk or line defects Simple structure/fabrication (low fabrication cost) Small sized panel
+ + + + + +
Data Lines (Anodes)
Scan L
ines (
Cath
odes)
Programmable current source
OEL Cpara
PMOLED
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Scan 1
Scan 2
Scan 3
Scan 4
Data 1
Data 2
Data 3
Data 4
t1 t2 t3 t4 t5
Data 5
Data 6
Scan Line , Data Line Pixel (( Frame)Frame)
Data
1 2 3 4 5 6
Scan
1
2
3
4
Active Matrix
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Active Matrix OLEDs Common cathode, Display during frame time Low pixel drive voltage/current Low power consumption Full color capability Medium/large sized panel
AMOLED
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PM & AM Active MatrixPassive Matrix
LTPS(TFT) + OLED
Simple Process Low Cost
Cost
& Symmetry
Driving method
Panel IC
= Scan Line
Scan Line
Scan Line
Duty Driving(Scan )
Scan Line
Static Driving( )
Size Display (Mobile, CNS, Notebook, TV )
2 Mobile Display - Car Audio, ,
Display
1) PM (Lp) .Lp = Lo Scan Line PM 1 Pixel ,
tp = 1 Frame / Scan Line AM 1 Pixel = 1 Frame
1 Frame (AM)
LoTime
Lp
tp
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a-Si TFT 100 poly-Si TFT , TFT compact TFT-LCD .
poly-Si TFT LCD
Controller, Interface Controller, Interface circuit,circuit,--source, source, Amp, DCAmp, DC--DCDC
data driver
gate
dri
ver
Gate
PCB
(DC-DC con
vert, Vc
om)
Source PCB (Controller, -source )
D-IC
a-Si TFT LCD
Excimer Laser
Scan
poly-Si
: depo. (poly-Si)film .
a-Si:H poly-Si Single-Si
(cm2/Vsec)
0.5 ~ 1 50 ~ 200 ~ 600
NMOS NMOS,PMOS NMOS,PMOS
LTPS (Low Temperature Poly-Si) TFT
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AMOLED
Conventional 2T-1C Pixel Structure
(from Professor Jin Jang, 2005)
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IR-Drop of VDD Line
PixelCircuit
PixelCurrent
PixelCircuit
PixelCircuit
PixelCircuit
VDD
( n ) IPixel
IPixel
IPixel
IPixel
IPixel
( n-1 ) IPixel
ParasticResistance of
Pixel VDD Line
RPixel
RPixel
IPixelRPixel
2 IPixelRPixel
Worst Case Pixel
VDD - Vdrop
2)1(
))1(.....21(
)1(...
........2
+=
++++=
+
++=
nnRI
nnRI
RnIRIn
RIRIV
pixelpixel
pixelpixel
pixelpixelpixelpixel
pixelpixelpixelpixeldrop
AMOLED
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Pixel to Pixel Non-uniformity
17, 500cd/m2, SXGA, 6bit-gray T1 : 20um/20um , T2 : 5um/10um Pixel Current : 20nA ~ 5.8uA VDD 12V VTH variation +/- 0.3V Mobility variation 10%
7VDD Line IR Drop
5Mobility Variation
25VTH Variation
Maximum Error (gray)Error Factors
AMOLED
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Bottom Emission OLED Top Emission OLED
Passivation Layer
Glass Substrate
getterSealant
Glass cap or Film type cap
Driving TR
Planarization layer
Glass Substrate
GetterMetal cap
Driving TR
Planarization layer
Inert gasMetal cathode
Anode
Semitransparentcathode
OrganicLayer
Pixel
High aperture ratio No Limitation circuit complexity
High integral density High resolution
Low Aperture Ratio Limitation circuit complexity
AMOLED
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Consideration for Driving Scheme Decision
Target Resolution(Line Time)
Aperture Ratio(# of Pixel Circuit TFT& Control Signal Line)
Pixel to Pixel Luminance Uniformity
Data Programming Time Pre-charge Scheme
(Driver LSI)
OLED Pixel Current Power, OLED Life time
IR-Drop of VDD lineTFT Threshold Voltage& Mobility Variations
Panel Size(Data Line
Capacitance)
PanelBrightness
AMOLED
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AMOLED History (2005. 2 )
(from Professor Jin Jang, 2005)
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