rln~lll[itillthe plane of the microstrip line, while the e¢ component radiates strongly into the...
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UNIVERSITI TUN HUSSEIN ONN MALAYSIA
PENGESAHAN STATUS TESIS
EQUIVALENT WIRE MODEL AND TRAVELLING WAVE MODE METHOD TO ANALYSE THE
RADIATED EMISSION OF A BENT MICROSTRIP LINE
SESI PENGAJIAN: 2008/2009
Saya VEE SEE KHEE mengaku membenarkan Tesis Sarjana ini disimpan di Perpustakaan dengan syarat-syarat kegunaan seperti berih.'ut:
I. Tesis adalah hakmilik Universiti Tun Hussein Onn Malaysia. 2. Perpustakaan dibenarkan membuat salinan untuk tujuan pengajian sahaja. 3. Perpustakaan dibenarkan membuat salinan tesis ini sebagai bahan pertukaran antara institusi
pengajian tinggi. 4. ** Sila tandakan (-/)
II II SULIT
II II TERHAD
II -/ II TIDAK TERHAD
!l'P~ L-Ul?~
(T ANDA T ANGAN PENULlS)
Alamat Tetap:
(Mengandungi maklumat yang berdarjah keselamatan atau kepentingan Malaysia seperti yang termaktub di dalam AKT A RAHSIA RASMI 1972)
(Mengandungi maklumat TERHAD yang telah ditentukan oleh organisasifbadan di mana penyelidikan dijalankan
Disahkan oleh
(TANrCr~ELlA)
17, JALAN RUMBIA, TAMAN DATO
ABDUL RAHMAN JAARAR, 83000 BATU
PAHAT JOHOR.
PROF. DR. MOHO. ZARAR BIN
MOHD.JENU
(Nama Penyelia)
Tarikh: 8 JUN 2009 Tarikh: 8 JUN 2009
CATATAN: ** Jika tesis sarjana ini SULIT at au TERHAD, sila lampirkan surat daripada
pihak berkuasalorganisasi berkenaan dengan menyatakan sekali scbab dan tempoh tesis ini perlu di kelaskan sebagai SULIT at au TERHAD.
"I hereby declare that I have read this thesis and in my opinion this thesis in terms of
content and quality requirements fulfill the purpose for the award of the
Master of Electrical Engineering."
Signature ~/~
............. /: .. ~ ................... .
Name of Supervisor PROF. DR. MOHD. ZARAR BIN MOHD. JENU
Date 8 JUN 2009
EQUIVALENT WIRE MODEL AND TRAVELLING WAVE MODE
METHOD TO ANALYSE THE RADIATED EMISSION OF A BENT
MICROSTRIP LINE
YEESEEKHEE
A thesis submitted in fulfillment of the requirements for the award of Master of
Electrical Engineering
Faculty of Electrical and Electronic Engineering
Universiti Tun Hussein Onn Malaysia
JUN2009
"1 hereby declare that the work in this thesis is my own except for quotations and
summaries which have been duly acknowledged"
Signature
Name of Student YEE SEEKHEE
Date 8 JUN 2009
11
IV
ACKNOWLEDGEMENT
Many people have contributed directly or indirectly to the completion of this
thesis and their assistance is gratefully acknowledged. First of all, I would like to
express my gratitude to my supervisor, Prof. Dr. Mohd. Zarar Bin Mohd. Jenu. His
willingness to teach attitude and unfailing patience has been a great motivation for
me to excel in my work. Without his guidance and invaluable time spent with me in
this research work, this thesis would not have been completed successfully.
I would also like to express my heartiest thankful to EMC Center staff Mr.
Mohd. Erdi Bin Ayob, Mr Saizalmursidi bin Md. Mustam, and Mr. Mohd. Nazeri
Bin Sarmijan who helps me a lot in completing my laboratory and experimental
work.
My gratitude also goes out to Prof. Marco Leone, Prof. Christos
Christopoulos, Dr. Alireza Kazemipour, Dr. Xilei Liu and Mr Chiang Chun Tung, for
their willingness in sharing their knowledge and experience regarding the
experimental works, analytical fonnulation and MICROWAVE STUDIO®
application. I would like to thanks my family members for their moral support and
blessing since the beginning. My appreciation and thanks to my friends as well for
their constructive idea, comment and critics throughout the preparation of my
research work.
I've learned along the way and it is definitely an invaluable experience later
in life. Needless to say, without all the above help and support, the writing and
production of this thesis would not have been possible. Thank you.
v
ABSTRACT
Nowadays, expeditious developments in the electrical and electronic territory due to
endless demands from the markets have driven the operation frequency of the system
into the gigahertz region. This had evolved into a more effectual-performance
system, but also inflicts a lot of difficulties to the designers, for examples
Electromagnetic Interference (EMI) problem and Signal Integrity (SI) issue. The
integrity of circuit layout is inevitably compromised by bifurcated traces for
examples T -junctions, Y -junctions, right-angle bends or left-angle-bends and steps
planar transmission lines in order to fulfil the needs of a denser printed circuit
boards. However, bifurcation often induces impedance mismatching resulting in
reflection, radiated emission and power loss. This research is to investigate the
radiated emission of 0°,45° and 90° bent microstrip lines by using an analytical
fODnulation followed by computer simulation and experimental measurements for
validation purposes. The novelty of this research is the implementation of travelling
wave mode (TWM) method on bent microstrip line by adopting the equivalent wire
model. The reliability of the formulation is proven from the agreement between the
analytical results and computer simulation, especially in predicting the E¢
component. The analytical results clearly showed the significance of the bent in
altering the radiation pattern of the microstrip line. Increasing the operating
frequency and microstrip's width tend to produce more emission. One of the electric
field components, Eo is almost symmetrical with respect to the bent angle/2 line on
the plane of the microstrip line, while the E¢ component radiates strongly into the
bent angle + bent anglel2 direction. The magnetic field on the bent microstrip line
experiences an abrupt change at the location of the bent. This change becomes
apparent as the bent angle increases. Future work should focus on improving the
analytical fornmlation so that it can predict the Eo component with higher accuracy.
FurtheDnore, effort can also be made on generating algorithm which takes into
consideration the composite electric field radiation of all the bents on a practical
printed circuit board.
'·1
ABSTRAK
Pada zaman yang begitu pesat membangun terutamanya dalam bidang
elektrik dan elektronik, pem1intaan yang semakin melambung dari pasaran telah
menaikkan operasi frekuensi sistem elektronik ke tahap gigahertz. Ini telah
memajukan sistem kepada yang lebih cekal dan effektif, tetapi ia juga mendatangkan
kesukaran dan cabaran kepada para pereka bentuk !itar seperti kesan-kesan gangguan
elektromagnet (EM I) dan isu-isu kualiti isyarat (SI). Tidak dapat dinafikan,
kewujudan pelbagai cabangan seperti cabangan-T, cabangan-Y, pembengkokkan
kekanan bersudut tegak atau pembengkokkan kekiri bersudut tegak merupakan satu
fenomena yang tidak dapat dielakkan semasa mereka !itar elektrik yang lebih padat.
Walaubagaimanapun, dwi cabang sering kali mengakibatkan galangan tak sepadan
yang menghasilkan pantulan, pancaran tersinar dan kehilangan kuasa. Dwi cabang
yang mana dipertimbangkan sebagai fenomena ketidakselanjaran adalah salah satu
penyumbang kepada ganguan kualiti isyarat. Kajian ini adalah bertujuan untuk
mengkaji pengagihan arus serta radiasi l11edan elektrik bagi satu surihan garisan jalur
mikro yang dibengkok pada 00, 45 0 dan 900 l11enggunakan analisis perumusan diikuti
oleh simulasi kOl11puter dan pengukuran eksperil11en untuk tujuan pengesahan.
Pembahruan di dalam penyelidikan ini adalah pelaksanaan kaedah mod gelombang
bergerak (TWM) pada garis surihan jalur mikro bengkok dengan mengadaptasikan
model wayar setara. Kesahihannya terbukti apabila keputusan anal isis perumusan
l11enghal11piri keputusan yang diperolehi melalui simulasi computer terutamanya bagi
E¢ komponen. Keputusan-keputusan analisis menunjukkan dengan jelas bahawa
kewujudan bengkok pada garis jalur mikro telah mcngubah corak pancaran
elektriknya. Selain itu, adalah didapati bahawa peningkatan operasi frekucnsi dan
lebar jalur mikro akan l11eningkatkan pancaran clektriknya. Salah satu komponcn
medan elektrik, Eo pada satah jalur l11ikro adalah sentiasa simetri pada arah SlIdlil
bengkok 12, l11anakala kOl11ponen medan elektrik yang lain. E¢ tcrpancar dcngan
banyak ke arah SlIdllf bcngkok + slIdlll bengkok /2. Pengagihan arus pada garisan
jalur mikro bengkok mengalami perubahan yang ketara terutamanya pada bahagian
pembengkokkan. Perubahan ini semakin ketara apabila sudut pembengkokkan
dipertingkatkan. Kajian lanjutan seharusnya memfokus pada penambahbaikkan
analisis perumusan yang sedia ada ini supaya dapat mengira komponen Eo dengan
lebih tepat. bukan itu sahaja, focus juga boleh diletakan untuk menghasilkan
algoritma baru yang mempertimbangan gabungan pancaran medan elektrik bagi
semua pembengkokkan jalur mikro di atas papan litar tercetak.
VII
CHAPTER
CHAPTER I
TABLE OF CONTENTS
CONTENTS
THESIS STATUS CONFIRMATION
SUPERVISOR'S CONFIRMATION
TITLE
TESTIMONY
DEDICATION
ACKNOWLEDGEMENT
ABSTRACT
ABSTRAK
TABLE OF CONTENTS
LIST OF FIGURE
LIST OF SYMBOLS/ABREVIATIONS
LIST OF APPENDICES
INTRODUCTION
1.1 General
1.2 Problem Statement
1.3 Aim of Research
1.4 Objectives
1.5 Scopes of Research
1.6 Importance of Research
1.7 Summary
1.8 Organisation of the Thesis
Vlll
PAG
E
11
III
IV
V
VI
V11
Xl
XVI
XIX
6
7
7
8
9
9
10
CHAPTER II REVIEW OF THE METHODS OF ANALYSIS
2.1 Introduction
2.2 Microstrip Transmission Structure
2.3 Image Theory
2.4 The Transmission-Line Equations
2.5 Derivation of Transmission-line Equations
2.6 Characteristic Impedance
2.7 Propagation Constant
2.8 The Transmission Matrix
2.9 Transmission Line Effect
2.10 Microstrip Discontinuities
2.11 Compensated Microstrip Discontinuities
2.12 Review of Important Research Works
2.13 Summary
CHAPTER III METHODOLOGY
3.1 Review of Procedures
3.2 Analytical Formulation
3.2.1 Forward-Backward Travelling Wave Mode
Method
3.2.2 Cascaded Unifoml Transmission Line Model
3.2.3 Expanded Hertzian Dipole Model
3.2.4 Equivalent Wire Model
3.3 Configuration of Computer Simulation - MICROWAVE
STUDIO®
3.3.1 Modelled Microstrip Line
3.4 Experimental Measurements
3.5 Summary
CHAPTER IV RESULTS AND DISCUSSIONS
4.1 Analytical Investigation
IX
12
12
15
18
21
22
23
23
25
26
27
28
40
41
44
44
52
57
62
65
65
70
73
75
CHAPTER V
4.1.1 Effect of Tennination Scheme
4.1.2 Effect of Operating Frequency
4.1.3 Effect of The Trace's Width
4.2 Computer Simulation
4.2.1 0° Bent Microstrip Line
4.2.2 45° Bent Microstrip Line
4.2.3 90° Bent Microstrip Line
4.3 Discussion on Electric Field Radiation
4.4 Measurements Results
4.3.1 0° Bent Microstrip Line
4.3.2 45° Bent Microstrip Line
4.3.3 90° Bent Microstrip Line
4.5 Summary
CONCLUSIONS AND SUGGESTIONS FOR FUTURE
WORK
5.1 Conclusions
5.2 Suggestions for Future Work
REFERENCES
APPENDICES
x
78
84
89
94
94
96
98
100
105
105
107
109
111
114
116
117
122
Xl
LIST OF FIGURES
FIGURE TITLE PAGE
1.1 Aspects ofEMC 2
1.2 EMC Sub-problems '"' -'
1.3 Mechanisms of Electromagnetic Interference. 4
2.1 Conceptual Evolution of a Microstrip from a Two-Wire Line 14
2.2 TE Mode and TM Mode. 15
2.3 Image of a Vertical Electric Dipole 16
2.4 Image of a Horizontal Dipole 17
2.5 Induction of (a) electric field and (b) magnetic field on the 18 transmission line.
2.6 A transmission line consists of per-unit-length inductance, I, 19 and per-unit-length capacitance, c
2.7 The telegrapher's equations are based on infinitely cascaded 20 circuit model.
2.8 The per-unit-length model for use in deriving the transmission- 21 line equation.
2.9 Two-port circuit that can be represented by a four-element 24 transmission matrix
2.10 Cascaded circuits may be represented by multiplying their 25 transmission matrices
2.11 Configuration for Compensated (a) Step-in width, (b) right- 28 angled bends, and (c) T -junction
3.1 Flowchart of the research work 43
3.2 Source and observation points on the line 47
3.3 Cascaded segments of approximate uniform transmission line 53
3.4 Illustration of the junction and segment on the cascaded 53 uniform transmission line.
3.5 Conventional Hertzian dipole model. 57
3.6
3.7
3.8
3.9
3.10
3.11
3.12
3.13
3.14
3.15
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
4.10
Coordinate system to calculate the electric fields from a bent
transmission line with bent angle ¢o' The microstrip structure and the equivalent wire model.
(a) 0°, (b) 45° and (c) 90° of bent microstrip line modelled by using MICROWAVE STUDIO®. (d) Ground plane 1 W peak-to-peak Gaussian signal as the input source.
Mesh view of a straight microstrip line.
Microstrip lines connected with SMA connectors and terminated with SMT resistors. Experiment Setup.
Magnetic near field probe and spectrum analyzer.
Block diagram of the experimental setup.
Movement of magnetic near field probe.
Layout of the 90° bent microstrip line.
Characteristic impedance of micros trip line with different bent angle. Propagation constant of microstrip line with different bent angle. 2D Radiation pattern of a straight microstrip line with different terminations operating in 1 GHz. 8 = 85° plane. Results are calculated based on analytical formulation. 2D Radiation pattern of a straight microstrip line with different terminations operating in 1 GHz. 8 = 45 ° plane. Results are calculated based on analytical fOTInulation. 2D Radiation pattern of a 45° bent microstrip line with different terminations operating in 1 GHz. 8 = 85 ° plane. Results are calculated based on analytical fornmlation. 2D Radiation pattern of a 45° bent microstrip line with different terminations operating in 1 GHz. 8 = 45 ° plane. Results are calculated based on analytical fornmlation. 2D Radiation pattern of a 90° bent microstrip line with different teTIninations operating in 1 GHz. 8 = 85 ° plane. Results are calculated based on analytical fOTInulation. 2D Radiation pattern of a 90° bent microstrip line with different tern1inations operating in 1 GHz. 8 = 45 ° plane. Results are calculated based on analytical formulation. Three-dimensional radiation pattern of bent microstrip lines \\lith different termination scheme operating in 1 GHz. Results are calculated based on analytical formulation. (a) Eo component of a straight microstrip line when it is
matched terminated. (b) E9 component of a straight microstrip line when it is
matched tern1inated. (c) Eo component ofa 45° bent microstrip line when it is
unmatched tern1inated.
X11
58
63
66
67
69
70
71
72
72
73
75
77
77
80
80
81
81
82
82
83
xiii
(d) Erp component of a 45° bent microstrip line when it is
unmatched tenninated.
(e) Eo component of a 90° bent microstrip line when it is open
terminated.
(f) E1' component of a 90° bent microstrip line when it is open
terminated. 4.11 2D Radiation pattern of a straight microstrip line with matched 85
tern1ination operating in 2 different frequencies. e = 85° plane. Results are calculated based on analytical formulation.
4.12 2D Radiation pattern of a straight microstrip line with 85 unmatched termination operating in 2 different frequencies. e =
45 ° plane. Results are calculated based on analytical formulation.
4.13 2D Radiation pattern of a 45° bent microstrip line with matched 86 tern1ination operating in 2 different frequencies. e = 85 ° plane. Results are calculated based on analytical forn1Ulation.
4.14 2D Radiation pattern of a 45° bent microstrip line with 86 unmatched tern1ination operating in 2 different frequencies. e =
45 ° plane. Results are calculated based on analytical fonnulation.
4.15 2D Radiation pattern of a 90° bent microstrip line with matched 87 tennination operating in 2 different frequencies. e = 85 ° plane. Results are calculated based on analytical forn1Ulation.
4.l6 2D Radiation pattern of a 90° bent microstrip line with 87 unmatched termination operating in 2 different frequencies. e =
45 ° plane. Results are calculated based on analytical forn1Ulation.
4.17 Three-dimensional radiation pattern of bent microstrip line with 88 different tern1ination scheme operating in 2 GHz. Results are calculated based on analytical forn1Ulation. (a) Eo component of a straight microstrip line when it is
unmatched tern1inated. (b) E l' component of a straight microstrip line when it is
unmatched terminated. (c) Eo component ofa 45° bent microstrip line when it is
matched tenninated. (d) E rp component of a 45° bent microstrip line when it is
matched tenninated. (e) Eo component ofa 90° bent microstrip line when it is
matched tenninated. (f) Erp component of a 90° bent microstrip line when it is
matched tenninated. 4.18 2D Radiation pattern of a straight microstrip line with different 90
width tern1inated in matched termination, operating in 1 GHz. e = 85 ° plane. Results are calculated based on analytical forn1Ulation.
4.19 2D Radiation pattern of a straight microstrip line with different 90
XIV
width terminated in open tel1nination, operating in 1 GHz, operating in 1 GHz. 8 = 45 ° plane. Results are calculated based on analytical formulation.
4.20 2D Radiation pattern of a 45° bent microstrip line with different 91 width tel111inated in matched tern1ination, , operating in 1 GHz. 8 = 85 ° plane. Results are calculated based on analytical fOl1nulation.
4.21 2D Radiation pattern of a 45° bent microstrip line with different 91 width terminated in open tern1ination, operating in 1 GHz. 8 = 45 ° plane. Results are calculated based on analytical fOl1nulation.
4.22 2D Radiation pattern of a 90° bent microstrip line with different 92 width tel1ninated in matched tern1ination, operating in 1 GHz. 8 = 85 ° plane. Results are calculated based on analytical fOl111ulation.
4.23 2D Radiation pattern of a 90° bent microstrip line with different 92 width tel1ninated in open termination, operating in 1 GHz. 8 = 45 ° plane. Results are calculated based on analytical fOl1nulation.
4.24 Three-dimensional radiation pattern of bent microstrip line with 93 strip's width = 5mm operating in 1 GHz. Results are calculated based on analytical formulation. (a) Eo component of a straight microstrip line when it is open
terminated. (b) Eq, component of a straight microstrip line when it is open
tel1ninated. (c) Eo component ofa 45° bent microstrip line when it is open
tel1ninated. (d) E¢ component of a 45° bent microstrip line when it is open
tern1inated. (e) Eo component of a 90° bent microstrip line when it is
Ulll1atched tel1ninated. (f) E¢ component of a 90° bent microstrip line when it is
unmatched tel1ninated. 4.25 Comparisons between analytical and simulation results. The 95
straight microstrip line is operating in 2 GHz with matched tel111ination. 8 = 45° plane.
4.26 Comparisons between analytical and simulation results. The 95 straight microstrip line is operating in 1 GHz with uillnatched tern1ination. 8 = 85° plane.
4.27 Comparisons between analytical and simulation results. The 96 straight microstrip line is operating in 1 GHz with open tern1ination. 8 = 45° plane
4.28 Comparisons between analytical and simulation results. The 45° 97 microstrip line is operating in 1 GHz with matched tel111ination. 8 = 45° plane.
4.29 Comparisons between analytical and simulation results. The 45° 97 microstrip line is operating in 2 GHz with unmatched
xv
termination. e = 45° plane. 4.30 Comparisons between analytical and simulation results. The 45° 98
microstrip line is operating in 1 GHz with open ternlination. e = 85° plane.
4.31 Comparisons between analytical and simulation results. The 90° 99 microstrip line is operating in 2 GHz with matched termination. e = 85° plane
4.32 Comparisons between analytical and simulation results. The 90° 99 microstrip line is operating in 1 GHz with unmatched tennination. e = 45° plane.
4.33 Comparisons between analytical and simulation results. The 90° 100 microstrip line is operating in 2 GHz with open tennination. e = 45° plane.
4.34 Different configurations of transmission structure using 103 MICROW A VE STUDIO®.
4.35 Comparison of radiation pattern of different transmission 103 structure operating in 1 GHz with matched tennination.
4.36 Comparison of radiation pattern of different transmission 104 structure operating in 2 GHz with matched tennination.
4.37 Magnetic field orientation of the 0° microstrip line and the 106 placement of magnetic near field probe.
4.38 11.1" component for a 0° bent microstrip line. 106
4.39 Magnetic field orientation of the 45° microstrip line and the 108 placement of magnetic near field probe.
4.40 11;. and H-.: component for a 45° bent microstrip line. 109
4.41 Magnetic field orientation of the 90° microstrip line and the 110 placement of magnetic near field probe.
4.42 11.1" and H-.: component for a 90° bent microstrip line. 111
B-1 Illustration of distance between source point and observation 126 point when ¢o = O.
B-2 Illustration of distance between source point and observation 127
point when ¢o = 45° .
B-3 Illustration of distance between source point and observation 128
point when ¢o = 90° .
D-1 Illustration of sections of transmission line. 135
E-1 Coordinate system of the dipole. 142
E
H
f Liz
c
l'
g
z
r OJ
VI
A
f.1
f.1o
f.1,.
c
k
lJ
LIST OF SYMBOLSI ABBREVIATIONS
Electric Field Intensity (V 1m)
Magnetic Field Intensity (Aim)
Frequency (Hz)
Smallest Length of Transmission line, (m)
Per-unit-Iength Inductance, (henry)
Per-unit-Iength Capacitance, (farad)
Per-unit-Iength Resistance, (.0)
Per-unit-Iength Conductance, (MHO)
Impedance, (.0)
Propagation Constant (m- I)
Angle Frequency (rad/s)
Scalar Potential, (volt)
Vector Potential, (Akg/m)
Relative Pennittivity (F/m)
Relative Pem1ittivity of Free-Space ( 8.854 X 1O-12F/m)
Relative Pem1ittivity of Material (dimensionless)
Relative Penneability (Him)
Relative Penneability of Free-Space (~lo=41CX 1O-7H/m)
Relative Pem1eability of Material (dimensionless)
Wavelength (m)
Velocity (m/s)
Velocity of light in fTee-space (2.998 X 108 m/s)
Wavenumber (rad/m)
Intrinsic Impedance (n)
XVI
req
/g,Slal
EMC
EMI
PCB
IC
SI
EM
FDTD
MoM
IEC
FCC
CISPR
MIC
TEM
TE
TM
HE
RF
MMICs
EFIE
EWMoM
TWM
Forward Modal Current Constant Amplitude
Backward Modal Current Constant Amplitude
Length along the Microstrip Line, (m)
Bent angle (degree)
Height of the Microstrip Line, (mm)
Width of the Microsrip Line, (mm)
Thickness of the Microstrip Line, (mm)
Equivalent Radius of the Microstrip Line, (mm)
Frequency Limit Based on Equivalent Wire Model, (GHz)
Electromagnetic Compatibility
Electromagnetic Interference
Printed Circuit Board
Integrated Circuit
Signal Integrity
Electromagnetic Simulation
Finite Difference Time Domain
Method of Moment
International Electrotechnical Commission
Federal Communications Commission's
International Special Committee for Radio Interference
Microwave Integrated Circuit
Transverse Electromagnetic
Transverse Electric
Transverse Magnetic
Hybrid Mode
Radio Frequency
Monolithic Microwave Integrated Circuits
Electric Field Integral Equation
Equivalent-wire Moment of Method
Traveling Wave Mode
X\'11
LIST OF APPENDICES
APPENDIX ITEM
A List of Published Papers
B Distance Between the Observation Point and Source
Point Based on the Concept of Trigonometry
C
D
E
Derivation of Forward Backward Impedance and
Forward Backward Admittance with the Adoption of
Forward Backward Modal Current
Derivation of cascaded UnifoDn Transmission Line
Matrix
Derivation of Expanded Hertzian Dipole FOD1mlation
XIX
PAGE
122
124
128
133
140
CHAPTER I
INTRODUCTION
1.1 General
The strategy of marketing electrical and electronic products on time at the
lowest cost is a priority for many manufacturers. But as the operating frequency
increases, Electromagnetic Compatibility (EMC) requirements during the design
cycle and development must be addressed accordingly. EMC is defined as the ability
of device, equipment, or system to function satisfactorily in its enviromnent without
introducing intolerable electromagnetic disturbance to anything in that enviromnent
[1 ].
Consideration for EMC is now crucial for all electrical and electronic
equipments from the early stage of designing until production. New electronic
products which perform critical function will become futile if the devices do not
meet legal requirements in the countries they are to be marketed. Consequently,
Malaysian manufacturers are concemed about the EMC requirement in order to
penetrate imp0l1ant intemational markets such as United States of America,
European Union and Japan.
1
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