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© Fuji Electric Co., Ltd. All rights reserved. 1
The State-of-The-Art and Future Trend of Power Semiconductor Devices
7 Nov. 2015Dr. T. Fujihira(藤平(藤平(藤平(藤平 龍彦)龍彦)龍彦)龍彦)
Fuji Electric Co., Ltd(富士電機)(富士電機)(富士電機)(富士電機)
CPSSC 2015, Shenzhen
© Fuji Electric Co., Ltd. All rights reserved. 2
� Introduction
� SiC and GaN
� RC-IGBT
� 7th Generation IGBT
� RB-IGBT
� Conclusions
Outline
© Fuji Electric Co., Ltd. All rights reserved. 3
Worl
d P
opula
tion (
Bill
ions)
Worl
d P
opula
tion (
Bill
ions)
Worl
d P
opula
tion (
Bill
ions)
Worl
d P
opula
tion (
Bill
ions)
Worl
d G
DP
(B
illio
ns 2
005 U
SD
)W
orl
d G
DP
(B
illio
ns 2
005 U
SD
)W
orl
d G
DP
(B
illio
ns 2
005 U
SD
)W
orl
d G
DP
(B
illio
ns 2
005 U
SD
)YearYearYearYear YearYearYearYear
Source: World Population Prospects: The 2012 RevisionSource: World Population Prospects: The 2012 RevisionSource: World Population Prospects: The 2012 RevisionSource: World Population Prospects: The 2012 Revision
Population Division of the Department of EconomicPopulation Division of the Department of EconomicPopulation Division of the Department of EconomicPopulation Division of the Department of Economic
and Social Affairs of the United Nations Secretariatand Social Affairs of the United Nations Secretariatand Social Affairs of the United Nations Secretariatand Social Affairs of the United Nations Secretariat
Source: International Energy Outlook 2014, Reference case,Source: International Energy Outlook 2014, Reference case,Source: International Energy Outlook 2014, Reference case,Source: International Energy Outlook 2014, Reference case,
U.S. Energy Information AdministrationU.S. Energy Information AdministrationU.S. Energy Information AdministrationU.S. Energy Information Administration
Red line: IEO2014 history & projectionRed line: IEO2014 history & projectionRed line: IEO2014 history & projectionRed line: IEO2014 history & projection
Dashed line: linear fittingDashed line: linear fittingDashed line: linear fittingDashed line: linear fitting
What will come?
� Population grows 1.5 timesPopulation grows 1.5 timesPopulation grows 1.5 timesPopulation grows 1.5 times � GDP grows 6 timesGDP grows 6 timesGDP grows 6 timesGDP grows 6 times
© Fuji Electric Co., Ltd. All rights reserved. 4
Worl
d P
rim
ary
Energ
y C
onsum
ption
Worl
d P
rim
ary
Energ
y C
onsum
ption
Worl
d P
rim
ary
Energ
y C
onsum
ption
Worl
d P
rim
ary
Energ
y C
onsum
ption
(Quadri
llion B
tu)
(Quadri
llion B
tu)
(Quadri
llion B
tu)
(Quadri
llion B
tu)
YearYearYearYear
Red line: IEO2013 history & projectionRed line: IEO2013 history & projectionRed line: IEO2013 history & projectionRed line: IEO2013 history & projection
Dashed line: linear fittingDashed line: linear fittingDashed line: linear fittingDashed line: linear fitting
Source: International Energy Outlook 2013, Reference case,Source: International Energy Outlook 2013, Reference case,Source: International Energy Outlook 2013, Reference case,Source: International Energy Outlook 2013, Reference case,
U.S. Energy Information AdministrationU.S. Energy Information AdministrationU.S. Energy Information AdministrationU.S. Energy Information Administration
Source: IPCC 5Source: IPCC 5Source: IPCC 5Source: IPCC 5thththth Assessment ReportAssessment ReportAssessment ReportAssessment Report
Climate Change 2014 Synthesis Report, 2015Climate Change 2014 Synthesis Report, 2015Climate Change 2014 Synthesis Report, 2015Climate Change 2014 Synthesis Report, 2015
Figure SPM.6.Figure SPM.6.Figure SPM.6.Figure SPM.6.
Energy/Resources and Climate Change
� Energy consumption 3 timesEnergy consumption 3 timesEnergy consumption 3 timesEnergy consumption 3 times � Temperature +1 to +3 degreeTemperature +1 to +3 degreeTemperature +1 to +3 degreeTemperature +1 to +3 degree
� Sea level +0.4 to +0.8 mSea level +0.4 to +0.8 mSea level +0.4 to +0.8 mSea level +0.4 to +0.8 m
© Fuji Electric Co., Ltd. All rights reserved. 5
� Switch from fossil to renewable energiessolar, wind, storage, etc.
� Increase efficiency of power conversion,generation, transmission, distribution, etc.
� Reduce consumption, increase reuse and recycleof limited natural resourcesincluding Cu and Iron in PE systems
to establish a sustainable society
What we should do
as power electronic R&D or Industries
© Fuji Electric Co., Ltd. All rights reserved. 6
� Introduction
� SiC and GaN
� RC-IGBT
� 7th Generation IGBT
� RB-IGBT
� Conclusions
© Fuji Electric Co., Ltd. All rights reserved. 7
Latest Performance of SiC MOSFET
© Fuji Electric Co., Ltd. All rights reserved. 8
0.1
1
10
100
1000
100 1000 10000 100000
■Panasonic(GaN-HEMT)
◆Avogy(GaN-vertical-PNDi)
◇Avogy(GaN-vertical-FET)
○Hitachi-metal(GaN-vertical-PNDi)
●Sumitomo(GaN-vertical SBD)
▲Toyota Gosei(GaN-vertical-FET)
All data are from published papers.
No mass-produced product in the
market.
BV [V]
Ron
Ron
Ron
Ron-- -- A
[mΩ
A[m
ΩA[m
ΩA[m
Ω・・ ・・cm2]
cm2]
cm2]
cm2]
Latest Performance of GaN Devices
© Fuji Electric Co., Ltd. All rights reserved.
Fuji Electric Co., Ltd.
690V stack inverterVVVF inverter
- Tokyo Metro Co., Ltd. -
TOSHIBA Co.
200/400V
general purpose inverter
VVVF inverter for next gen.
Shinkansen
Fuji Electric Co., Ltd.
Auxiliary power supply
- Tokyo Metro Co., Ltd. -
Mitsubishi Electric Co.
Applications of Hybrid-SiC Power Modules
9
© Fuji Electric Co., Ltd. All rights reserved.
Toyota Motor Co.
Test vehicle and power control units VVVF inverter
- Odakyu Electric Railway Co., Ltd. -
Mitsubishi Electric Co.
Fuji Electric Co., Ltd.
1MW PV inverter
Residential PV inverter
Fukushima SiC Applied Engineering Inc.
320kV high voltage pulse generator
Using SiC discrete MOSFET
Applications of All-SiC Power Modules
10
© Fuji Electric Co., Ltd. All rights reserved. 11
Yaskawa Electric. Co. applied GaN-HEMT to residential PV inverter
・high efficiency 96.5%⇒98.2%
・40% size down
Toshiba Lighting & Technology Co.
GaN-HEMT applied to power supply of LED
Applications of GaN HEMT
© Fuji Electric Co., Ltd. All rights reserved. 12
[Calc. condition]
fc=2 ~16kHz,Vcc=600V, Io=1/2rated, λ=1.0, fo=50Hz, cosΦ=0.9
-19%
-61%-48%-33%
Decreasing rate of All-SiC against Si
Loss Comparison IGBT/Hybrid-SiC/All-SiC
1200V Device
© Fuji Electric Co., Ltd. All rights reserved. 13
[Calc. condition]
fc=2 ~16kHz, Vcc=900V, Io=1/2rated, λ=1.0, fo=50Hz, cosΦ=0.9
-48%
-73%-68%
-59%
Decreasing rate of All-SiC against Si
Loss Comparison IGBT/Hybrid-SiC/All-SiC
1700V Device
© Fuji Electric Co., Ltd. All rights reserved. 14
[Calc. condition]
fc=2 ~16kHz, Vcc=1800V, Io=1/2rated, λ=1.0, fo=50Hz, cosΦ=0.9
-73%
-84%-82%
-79%
Decreasing rate of All-SiC against Si
Loss Comparison IGBT/Hybrid-SiC/All-SiC
3300V Device
© Fuji Electric Co., Ltd. All rights reserved. 15
Next-Gen. Converter-Inverter Using SiChttp://jr-central.co.jp/news/release/_pdf/000027199.pdf
© Fuji Electric Co., Ltd. All rights reserved. 16
690VAC Drive, Hybrid-SiC Module Installed
More Information Available on Fuji website http://www.fujielectric.com/products/ac_drives_lv/frenic-vg/products/features/
1700V/400A 2in11700V/400A 2in11700V/400A 2in11700V/400A 2in1
© Fuji Electric Co., Ltd. All rights reserved. 17
All-SiC Module ExampleSiC MOSFET Module installed to 1MW 3-phase PV inverter
98.8% Efficiency 20% smaller footprint, lighter weight, less mechanical materialsProduct Release Aug. 2014
© Fuji Electric Co., Ltd. All rights reserved. 18
All-SiC Example - 20kW 3-Phase PV Inverter
1/4 Inverter Size
1/8 Power Stack Size
1200V-100A All-SiC
Module Installed97.6
97.8
98.0
98.2
98.4
98.6
98.8
99.0
99.2
0 10 20 30 40 50
周波数 [kHz]
効率
[%]
SiSiSiSi----IGBT PV InverterIGBT PV InverterIGBT PV InverterIGBT PV Inverter
AllAllAllAll----SiCSiCSiCSiC PV InverterPV InverterPV InverterPV Inverter
fc (kHz)fc (kHz)fc (kHz)fc (kHz)
Eff
icie
ncy (
%)
Eff
icie
ncy (
%)
Eff
icie
ncy (
%)
Eff
icie
ncy (
%)
Power Conversion Efficiency
99% efficiency even at high carrier frequency1/8 power stack size and 1/2 device loss
1/2 Device Loss
Compared to Si IGBT
© Fuji Electric Co., Ltd. All rights reserved. 19
Silicon / Hybrid-SiC / All-SiC
C
E
G
Si-IGBT+Si-FWD(conventional)
Si-IGBT+SiC-SBD(started)
SiC-MOS+SiC-SBD(coming)
C
E
G G
D
S
IGBT Hybrid-SiC All-SiC
Loss 1 2/3 1/2Material 1 2/3 1/2
orfc 1 2 4LC 1 1/4 1/16
© Fuji Electric Co., Ltd. All rights reserved. 20
Hybrid-SiC Module Line-up Plan
© Fuji Electric Co., Ltd. All rights reserved. 21
� Introduction
� SiC and GaN
� RC-IGBT
� 7th Generation IGBT
� RB-IGBT
� Conclusions
© Fuji Electric Co., Ltd. All rights reserved. 22
New Reverse-Conducting IGBT (1200V) with Revolutionary Compact Package,K.Takahashi et.al, PCIM Europe 2014.
RC-IGBT - Device Structure
© Fuji Electric Co., Ltd. All rights reserved. 23
RC-IGBT - Eoff vs VON / Err vs VF
© Fuji Electric Co., Ltd. All rights reserved. 24
RC-IGBT – Application Impact
© Fuji Electric Co., Ltd. All rights reserved. 25
flange
inlet
outlet
Next Gen. high power module for EV/HEV
【【【【Features】】】】System ::::750V/800A 6in1Device ::::1G RC-IGBTAluminum direct cooling fin with jacketTj(op) ::::Operation Temp. 175℃℃℃℃ guaranteedDimension ::::162mm××××116mm××××24mm
【【【【Application example】】】】
Motor Output ::::80-150kWVDCmax ::::450VIACpeak ::::460ArmsCarrier freq. ::::6kHz
Application of RC-IGBT
© Fuji Electric Co., Ltd. All rights reserved. 26
Trend and Forecast of Power Densityof Automotive IGBT Module
Output Power density [kVA/L] = Max. continuous output power [kVA] / Module volume [L]
0
200
400
600
800
1995 2000 2005 2010 2015 2020
Outp
ut
Pow
er
density [
kVA
/L]
Industry
1st.GenCu indirectWater-cooling
2st.GenCu directWater-cooling
1st.GenAl directWater-cooling
2st.GenAl directWater-cooling
3st.GenAl directWater-coolingM651,M652
14 in 1 Module
14 in 1 2nd Gen.Module
M653
4th.Gen
6th.Gen
Automotive
© Fuji Electric Co., Ltd. All rights reserved. 27
� Introduction
� SiC and GaN
� RC-IGBT
� 7th Generation IGBT
� RB-IGBT
� Conclusions
© Fuji Electric Co., Ltd. All rights reserved. 28
Technical Overview of 1200V IGBT
N-drift
P+collector
Collector
Gate Emitter
PN+
4th Gen.(S-Series)Y1998
N-drift
P+collector
Collector
Gate
Emitter
PN+
N-field-stop
5th Gen.(U-Series)Y2002
N-drift
Collector
Gate
Emitter
P
N+
6th Gen.(V-series)Y2007
N+field-stop
P+collector
7th Gen.(X-series)
N-drift
Collector
Gate
Emitter
PN+
N+field-stop
P+collector
Collector
3rd Gen.(N-Series)Y1995
N+buffer
N-drift
P+substrate
Gate Emitter
PN+
Trench gate + Field-stopFine surface pattern Thinner drift layer
© Fuji Electric Co., Ltd. All rights reserved. 29
Improvement
Tj=150°C
Achievement of 7G IGBT 1200V
Reduced Vce(sat) Reduced Eoff and Vspike Reduced loss
Tj=150 deg. C
© Fuji Electric Co., Ltd. All rights reserved.
3rd Gen.(JA-Series)
Y1994
5th Gen.(U-Series)
Y2002
6th Gen.(V-series)
Y2007
Anode
Cathode
Anode
Cathode
Anode
Cathode
7th Gen.(X-series)
Anode
Cathode
Technical Overview of 1200V FWD
Optimized lifetime controlThinner drift layer
30
© Fuji Electric Co., Ltd. All rights reserved. 31
Tj=150°C
9% reductionat dv/dt=10kV/us.
Achievement of 7G FWD 1200V
Reduced Vf Soft recovery Reduced Eon+Err
Reverse recovery dv/dt: Tj=R.T., VCC=600V, IC=10A (1/10x Inom), VGE=+15/-15V.Switching conditions: Tj=150°C, VCC=600V, IC=100A (1x Inom), VGE=+15V/-15V.
© Fuji Electric Co., Ltd. All rights reserved. 32
Cross-section of solder(under chips) after dTjpower cycling test(at the same cycles).
Cracks
New solder
Conventional solder Lessdeterioration
Achievement of 7G IGBT Package
175 degree C operation is assured
© Fuji Electric Co., Ltd. All rights reserved.
Inverter drive conditions: VDC=600V, IO=35Arms, fO=50Hz,fC=4, 8kHz, cosφ=+0.9, modulation rate=1.0, Rg=reverse
recovery dv/dt 10kV/us, Ta=40°C, Rth(f-a)/leg=0.60°C/W,Loss characteristics are at Tj=150°C
Impact of 7G IGBT ModuleReduced loss and reduced Tj or increased output
with smaller package
33
© Fuji Electric Co., Ltd. All rights reserved. 34
7G IGBT Module X-Series Line-up Plan
© Fuji Electric Co., Ltd. All rights reserved. 35
� Introduction
� SiC and GaN
� RC-IGBT
� 7th Generation IGBT
� RB-IGBT
� Conclusions
© Fuji Electric Co., Ltd. All rights reserved. 36
RB-IGBT Installed T-3level IGBT Module
12in1 IGBT Module
(1200V/100A)
4in1 IGBT Module
(1200V/300A)
12in1 IGBT Module
(1200V/100A)
4in1 IGBT Module
(1200V/300A)
T1T1T1T1
T2T2T2T2T4T4T4T4
T3T3T3T3
PPPP
UUUU
NNNN
CCCC
MMMM
T1Gu
T2Gu
T3Ew
P
M
N
U
V
W
T1Gv T1Gw
T2Gv T2Gw
T1/T4Eu T1/T4Ev T1/T4Ew
T2Eu T2Ev T2Ew
T3Eu
T3Ev
T3Gu
T3Gv
T3Gw
T4Gu
T4Gv
T4Gw
TH1 TH2
AT-NPC : Advanced T-type NPC (Neutral-Point-Clamed)
Already available in market
© Fuji Electric Co., Ltd. All rights reserved. 37
500kVA 3phase-UPS Using RB-IGBT
Conventional
2-level
T-Type
With RB-IGBT installed
FUJI UPS 7000HX-T3500kVA
η=97.1%η=95.1%
S. Takizawa et al., Proceedings of PCIM Europe 2012 pp. 296-302
Peak efficiency improved by 2 pointVolume and weight cut down to 2/3 of 2-level
© Fuji Electric Co., Ltd. All rights reserved. 38
� Introduction
� SiC and GaN
� RC-IGBT
� 7th Generation IGBT
� RB-IGBT
� Conclusions
© Fuji Electric Co., Ltd. All rights reserved. 39
Comparison of SiC and Si-IGBTPower Density
Loss or fc Material Chip Inverter
IGBT+FWD 1 1 1 1 1
Next gen. 0.9 1.2 0.9-0.7 1.5 1.1-1.5
RB-IGBT 0.9 1.2 0.9-0.7 1.5 1.1-1.5
AT-NPC 2/3 2 2/3 3/4* 1.5
RC-IGBT 1 1.5 0.9-0.8 1.3 1.3
Hybrid-SiC 2/3 2 2/3 1.5 1.5
All-SiC 1/2 4 1/2 2 2
*because of the increased number of switches
© Fuji Electric Co., Ltd. All rights reserved. 40
Power Density: Power Rating (Voltage x Current) / Total Chip AreaLoss: Estimated Total Power Dissipation in 400VAC General Purpose Inverter
Trend and Forecast of Power Density and Lossof Power Device Chips
1200V chip or chip set
© Fuji Electric Co., Ltd. All rights reserved. 41
1G
2010
600V,1200V,1700V
2030
2G
1G
1G 2G 3G
All-SiC ModuleAll-SiC Module
RB-IGBT ModuleRB-IGBT Module
RC-IGBT ModuleRC-IGBT Module
Hy-SiC ModuleHy-SiC Module
SJ-MOSFETSJ-MOSFET
6G
4G
2G 3G 4G 5G
IGBT ModuleIGBT Module
Trench MOSFET(LV)Trench MOSFET(LV)
Year of Products
1G 2GSiC MOSFETSiC MOSFET 3G
SiC SBDSiC SBD 1G 2G 3G
2020
2G
1G 2G
7G
3G
1G 2G
2015 2025
3G
3G
3G
8G
Power Semiconductor Device Technology
© Fuji Electric Co., Ltd. All rights reserved. 42
Power Module Packaging Technologies
7G-IGBTSiC-Hybrid
Si IGBT trend(50A-1200V)
SiC device
Junction max temperature 125oC 150oC 175oC 200oC
1990 1995 2000 2010 20152005 2020
L seriesN series
S series
U series
V series
Die
foot
prin
t siz
e (a
.u.)
[L
serie
s=10
0]
100
10
80
60
40
20
Si Limit
New packagefor SiC device
175oC – Improve tech today, 200oC – Evolutional new package1990 1995 2000 2010 20152005 2020
© Fuji Electric Co., Ltd. All rights reserved. 43
Thank you!
© Fuji Electric Co., Ltd. All rights reserved.
7G IGBT Lineup Plan (650V)
44
© Fuji Electric Co., Ltd. All rights reserved. 45
Expanding Product Range of AT-NPC IGBT
© Fuji Electric Co., Ltd. All rights reserved. 46
1MW 3-phase PV Inverter Using RB-IGBTPeak efficiency measured is as high as 98.5%
K.Fujii et.al.,"1-MW Solar Power Inverters using new Three-level IGBT Modules connected in parallel," in Proc. PCIM Asia 2012, pp.81-86
© Fuji Electric Co., Ltd. All rights reserved. 47
SiC Updates – 16kV IGBT
Low Vf and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT, Yonezawa, Y.et al, IEDM2013Dynamic Characteristics of Large Current Capacity Module using 16-kV Ultrahigh Voltage SiC Flip-Type n-channel IE-IGBT , Mizushima T, ISPSD2014
© Fuji Electric Co., Ltd. All rights reserved. 48
� 7G-IGBTs and RC-IGBTsas “The Next Generation Silicon Power Devices”
� RB-IGBT and AT-NPC for η=98.5%+
� SiC-SBD/Si-IGBT for η=98.8%+reducing cost & size of LC and mechanicalor 1.5XIout
� SiC-MOSFET/SBD for η=99.0%+and reducing cost & size of LC and mechanicalor 2XIout
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