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EnablingAutonomousSensorNodes:

MechanicalResonators(CABTURES)

.

CoIs:W.Andreoni,L.Forr,O.Grning, A.Ionescu,

.

,

.

,

.

,

.

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Motivationandcoreconcept

I. TunableCNT

resonators

as

aplatform,

enabling

low

power

sensorsanddevicesforautonomouscomplexsensorsystems

forhealth,securityandtheenvironment

II. ASystem

in

Package

(SiP)

technology

platformintegrating

CMOS,MEMSandCNTs(orothernanostructures)formany

futureapplications

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Systemoverview

5

mm

withreadoutelectronics(CMOSIC)withinapackageadaptedtothe

application(capwafer)

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Taskdistribution

T3:MEMS

withCNTs

T2:SWNTfund.

propertiesT6:System

inPackage

T4:CNTmech.

interfaces

T1:CNTgrowth

&integration

T5:CMOSIC

&sys.model

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Systemassemblyprocess

Considerablework

within

the

consortium

has

been

dedicated

so

far

to

specifying

acoherentprocessflowforassemblingthesystem,thatiscompatiblefromthe

outsetwithallindividualprocessesandchips

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Systemassemblyprocess

Considerablework

within

the

consortium

has

been

dedicated

so

far

to

specifying

acoherentprocessflowforassemblingthesystem,thatiscompatiblefromthe

outsetwithallindividualprocessesandchips

Glasscap

CNT

NEMSchip

TSV

CMOSchi

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T6:Systemlevelassemblyandencapsulation

Objective: toconnecttheCMOSIC

with

the

CNT

NEMS

and

finally

Teru Akiyama

DanickBriand

Checkingtemperaturecompatibilityofmetallization

DevelopingglasscapprocessRokaya Gueye

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T6:Cr/Aumetallization

Test:Ohmic contacttoSi,withstandeutecticbondingconditions(T=415C,t=45min)

Results:WirebondingtestOK,surfacewithaggregatesbutstillacceptableresistance

Sample Annealing

conditions

Resistance

before

annealing

Resistanceafter

annealing

N t e Si with a Cr Au ad initial

100um

nSi 250C45min

N2flow

Schottky Schottky

nSi 400C45min Schottky Ohmic:

ow ~ ms

pSi 400C45min

N2

flow

Ohmic:

R~13

Ohms

Ohmic:

R~13

Ohms

NtypeSiwitha15nm/150nmCr/Au

padannealedat400Cduring45min

100um Nextsteps:CheckrealCNFETcontactsunderabove

annealingconditions

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T6:Ta/PtTSVcontactonSi

In N2 flow

In air In N2 flow

simulationoftemperatureduringLPCVD

In air In N2 flow

ptypeSiwitha15nm/150nm

Ta/Ptpad(initial)

100um35min

65min

Time

205min

processforSWNTsynthesis

35min65min

Time205min

growthconditions

(initial

oxidation,

then

growth

at

T=850C)

Results:Afteroxidationsomeaggregatesbutstillagood

,

Sample Resistancebefore

annealing

Resistanceafter

annealing

afteroxidation(mag.x20)

nSi/Ta/Pt Schottky Schottky

pSi/Ta/Pt Ohmic: R~12 Ohms Ohmic: R~23 Ohms

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T6:Ta/PtTSVcontactonSi

In N2 flow

35min65min

Time205min

s mu at ono temperature ur ng

processfor

SWNT

synthesis

Results:Combiningoxidationandannealingat850Cresultsincompleteloss

ofTa/Pt

pads

Nextsteps:protectthePtpadsduringCNTwithaSiN/otherlayerand

simulateTSVsinrealCNTgrowthconditions

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T3:Resonatordesign,fabricationandcharacterization

Objective: todesignmicroelectro

mechanical

structures

and

optimize

HengkyChandrahalim

ShihWeiLee

OptimizingelectricalcontactsonSWNTsinSOI

mprov ngga e es gn orop ma coup ng MatthiasMuoth

CosminRoman

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T3:Revisedprocessflow

Step1.DeepUVlithographyandICP

etching Step4.

ALD

assisted

lift

off

top

metal

Step2.Thermaloxidation&remove

topSiO2bypolishing Step5.Releasingsacrificiallayer

(HF+CPD)

2 a a ys u

Step3.LiftoffofFerritinandCNT

growth

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T3:Fabricationresults

2m

ICPetching 0.6mwidthtrenches

10um

DeepUV

0.5mfeaturesize

2m

1m 2m

sa gnment

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T3:CarbonNanotube Synthesis

L.Durrer etal.,Nanotechnology20,355601(2009)

Diameterdistribution

Catalystsizeseparation

ThermalCVD

CH4/H2

Method:

Feedstock:

850C/0.2

atm

Diametercontroland

Temp./Press.:

Notes:

narrowdiameter

distributionby

catal st

sedimentation

centrifugation

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T3:Reproducibleelectricalcontacts

D2

afterrelease

Nextste s:

Measure

CNFETs

with

smallgatedistance,passivated

contactsm

D1 D2 D3 D4 D5

R

before

463k 150k 218k 207k 205ke ease

Rafter

release

498k 350k 219k 204k 285k

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T1:Carbonnanotubeintegration

SWNTsofcontrolleddiameter,

locationand

direction

KathrinGloystein

Ma orcurrentactivities:ArnaudMagrez

Catalystpreparation

(e

beam

lithography)

Lithographicallyanchorednanoparticle synthesis(LANS)

PositivephotoresistMassimoSpina

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T1:Growthprocess

Equimolar C2H2CO2reaction(oxidativedehydrogenation)atT~650C

1um

Magrezetal.,Angew Chem IntEd46,441444(2007)

Catalyst particlesactivelongtime

highyieldandmaxlength~250m

,

,

.

walls25andforestgrowth

adaptprocessforindividualSWNTgrowth

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T1:Catalystpreparation

Positivephotoresist process:

PMMA

Si

Si3N4

Si

Si3N4

Si

Si3N4

Si

Si3N4

ebeam Fedeposition liftoff

Preliminaryresults:CNT(bundles)growthdemonstratedfordotsizes>50nm

Conditions:

Equimolar growth

(C2H2CO2)650C

for30min

500nm 1000nm

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T4:Mechanochemical clampingatcontacts

Objective: ...toachievecontrol

ontheclampingofCNTsattheSimoneSchrle

Majorcurrentactivities:ManishTiwari

Analysisofforcedisplacementcurvesandfailure

technique

CNTintegration

by

dielectrophoresis

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T4.TEMcompatiblechipsforclampingtest

Chipswithlateral

access for

manipulationCNT ntegrat on y

dielectrophoresis on

SiO2membranefor

support

Chipswithside

gate

electrode

for

FDEPF2F1

e ec rosa c a era

deflection

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T4.SetupforinsideTEMclampingtests

Nanofactoryinside

TEM manipulator

Tungsten

probeon

iezo

Preliminaryresultsof SiO2release

byHFandCPD(Tubebrokewhile

imaging)

MWCNTon

tungsten tip manipulator

Proofofconcept forTEMcompatibiltyofchips

HF releasestillneedstobeoptimized

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T2:Defectanalysisandfunctionalization

Objective: toevaluatetheimpactof

defectsandfunctionalgroupsonRached Jaafar

. ...

Jaap Kroes

Scanningtunnelingmicroscopy/spectroscopy

Ab initiomoleculardynamics

FabioPietrucci

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T2:ECRHPlasmatreatment

ECRPlasma,

p=0.1

mbar,

exposure

time:

60

sec.

TersoffHamann theory

dI/dV ~localdensityofstates(LDOS)

J.Tersoff andD.R.Hamann,PhysRevLett50,1998(1993)

LDOSisrelevantfortransportproperties

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T2:ECRHPlasmatreatment

Results:

ECRPlasma,

p=0.1

mbar,

exposure

time:

60

sec.

a

d1d2attributedtotwointeracting

Hydrogenchemisorption siteslis

hed

da

s1s2mightberelatedtoavacancy

typedefectwhichmightbedecorated

withH

unpu

ab initiosimulations

required Nextsteps:

V

max

d1s2s1

dI/dV(a.u.)

se erma gascrac ng ns ea o

ECRplasma(lessstructuraldamage)

Getelectronic

signatures

for

covalently

1.5

6eV

1.5

9e

0.4

7eV

d2

attachedHonSWNT(monomer,

dimer,trimer).

min

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T5:Integratedelectronicsandsystemproperties

Objective: ...todesignreadout,

feedbackanddriverelectronicsJiCao

ChristianKauth

Compactmodeldevelopment

OscillatorloopdesignMarcPastre

DimitriosTsamados

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T5:VibratingbodyFETSmallSignalModel

D.Grogget

al.,ESSDERC

2009

= + +i i i i

TheVBFETsmall

si nalmodel

Measured simulated

9.00E-011

1.00E-010

1.10E-010

R=3nm,

L=1.2um,

Ggap=400nm,

V.Sazonovaetal.,Nature431,284(2004)

qualitativelyfits

CNFETresonators5.00E-011

6.00E-011

7.00E-011

8.00E-011

Id(A)

E=1TPa,

Q=80.

valuestobe

extracted48 51 54 57 60 63

3.00E-011

4.00E-011

Frequency(MHz)

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T5:Devicefabricationresults

Nextsteps:BuildtheRF

measurement setup,extract

IndividualSWNTFET

intrinsicCNFETparameters,

extractrouting(TSV)parasitic

elements

SWNT arra s UnderdevelopmentRFsetup

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T5:Readoutdesignconsiderations

Capacitively inducedcurrent

VCitca

=

( ) ( ) ( )

2 VfC

VCCCV

ggd

gtgdCNTgCNTgtg

++=

1GHz@10 A

5Gate-CNT capacitance variation

A

GateDrain

capacitance

100

tion[aF]

dgd

GateCNT

capacitance

(@

Vg=0) 10

-5

ci

tancevari

aFC CNTg 78

0 10 20 30 40 5010

-10

Capa

100nm

2m

CNTg pp e gate vo tage

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T5:Readoutdesignconsiderations

IDcap FET

f

piezoI

tot cap FET piezo

2 cap gd gi C f V

i I

Conclusion:Becausecapacitivecurrentsfromgate toCNT are too

wea ,usep ezores st ves gna asarea out

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T5:Proposedoscillatorloopdesign

Passband Filter Demodulation GainRegulation

f

ID

VirtualIV

Conversion f

ID

Ground

CNT

D

GBiasPhase

CompensationNonlinearity

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SummaryandConclusions

CABTURES

is

a

technology

integration

project

between

nine

partner

groups:

integrationoffunctionalnano structureswithCMOScircuitsandzerolevel

packaging

Theprocessflowforintegrationissettled,minorchangespossible

Theunit

processes

for

SWNT

growth

are

under

development

and

follow

the

constra ntso t e ntegrate process ow:suspen e sac eve

Theoscillatorcircuitarchitectureispreliminarydefined,utilizingthe2*f0piezoresistive currentmodulationofaresonatingsuspendedSWNTFET.

TheSWNT

device

compact

model

and

the

small

signal

circuit

are

derived

from

thevibratingbodyFETmodel;parametersareextractedfromteststructures

e oo se or e ns u nves ga ono ec amp ngcon onso

SWNTsisunderdevelopment,teststructuresareunderdevelopment

Theinvestigation

of

the

influence

of

functional

groups

/defects

on

the

electronicproperties(LDOS)oftubesisstartedbyextensivesimulationsand

correlatedSTMmeasurements.

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Additionalinformationandtechnicaldetails

For

more

information

please

consult

any

of

the

7

CabTuRes posters

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TheCabTuRes team

29.04.10

. .