d08se3-extc-edcirc
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- S-£;.-~i?AY).3 ~)~)ec.-t~niCb le\;",ce,6.-Con. 5452-08. ~ -
, tX-r&." (REVISED COURSE)
AU.l'Lt.lL~ ~> (4)J'1C9-BRC-8774~ '=:t
(3 Hours) [Total Marks: 100
N.B. : (1) Question Nos. 1 and 2 are compulsory.
(2) Solve any three questions from remaining.
(3) Assume suitable additional data wherever necessary.
1. Design single stage R-C coupled CE amplifier using BJTto meet the following" 20
specifications. IA" I > 150. SIca < 10. FL=20 Hz.Va = 5 V RMSVcc = 18Vh. = 2.7 K hf = 220 h ,h re ma y be ne g lected.Ie " e ae
Calcula,te A" , Ri' Ra of the amplifier you have designed.
r-
2. (a) Design an R coupled CS amplifier using FET BW -11 to meet the following 15-
specification. IA" I> 15 IDSQ=1.2mAFL < 20 Hz.Va = 2.5VRi > 1M ohm.
(b) A certain JFET has IDss= 15 mA and pinch off voltage Vp = - 5 V. 5Calculate value of transconductance for VGS= - 2 V.
3. (a) For full wave rectifier with center tapped transformer (20-0-20 rms, 1550 Hz), Rl =10 Q.
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4. (a) Determine RCI ReI RbI Vce and Vb,
~
1 ".L V
1} 2. m f.tf2e.~p
f. e..
(4b V
13 :=. g CJ
2.,4\1
-
10
(b) (i) Show that in self bias circuit, the drift of quiescent point due 10
to temperature changes is made up automatically.(ii) Compare Triac with Diac.
5. (a) Explain various methods of biasing JFET and MOSFET.
(b) Draw and explain series regulator circuit using BJT.
15
5
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. "'. .~
Con. 54~2-RC-8774-08.
6. (a) Find the quiescent values of Vds' Id and Vgs for the amplifier shown. 10
I = - 4 mA V =4Vdss P -b 0 V-0
1<6K-£L
2
\(s
.J
R, \.;",.0.
'-IK-fL.
-
(b) (i) Explain line regulation and ripple rejection for regulated power 10
supply.
(ii) A particular optocoupler has current transfer ratio of 30 percent. Ifinput current is lOO mA, What is cutput current?
7. (a)
(b)
(c)
(d)
r"\
Describe four ways an 5C5 can be turned off.
Compare methods of biasing BJT.
What is critical inductance? What is L section filter?
Explain D-M05FET Amplifier operation.
20
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"P~ max. 1£max. I,.@25°C @25°C peak pulse currenl max.
300mW SOmA 2Amp.
V.2£VollS max. min. max.
RssKOmin. typo
4.7 7.0
Max.I,.
max. J.lA
5.0
Ivmin. mA
4.0
liD
~-2.10
VSZBJVolts
35
T.max1
71UJT type
2N2646 125°C 0.56 0.75 9.1
DBEC DATA SHEET
, Dera'te.
Pdmax Icmax V (..1) Vcso Vc£o VCER VCEX Vs£o' D.C. current gain Small Signal hi' VSI; 0,. aboveC£
'ransislor lype @ 25°C @ 25°C VOIIS vOllS (Sus) (SIlS) VOIIS VOIIS T. max max. °C/W 2SOC
Walls' Amps d.c. d.c. volts d.c. VOllSd.c. d.c. d.c. 1oC min lyp. max. min. typo max. W/oC
:N3055 115.5 15.0 1.1 100 60 70 90 7 200 20 50 70 15 50 120 1.8 \.5 0.7
CN055 50.0 5.0 1.0 60 50 55 60 5 200 25 50 100 25 75 125 1.5 3.5 0-4
XNI49 30.0 4.0 1.0 50 40 - - 8 ISO 30 50 \10 33 60 liS 1.2 4.0 0.3
XNIOO 5..Q 0'.7 0.6 70 60 65 - 6 200 50 90 280 50 ,90 280 0.9 35
1C147A 0.25 i(H 0.25 50 4S SO - 6 12S 115 180 220 125 220 260 0.9
NS2S(PNP ) 0.225 .5 '0.25 85 30 - - - 100 3S - 65 - 45 - -rJC147B ().25 -0.1 0.25 50 45 50 - 6 125 200 290 450 240 330 500 0.9
BFW II-JFET MUTUALCHARACTERISTICSTransistor lype hie hoe hre oja
BC 147A 2.7 K 0 18J,lU 1.5 X 10-4 0.4°C/mw
2N 525 (PNP) 1.4 K 0 2SJ,lU 3.2 x 10""--
BC 147B 4.5 K 0 30J,lU 2 x I0-4 0.4°C/mw
-VGSvolts 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.6 2.0 2-4 2.5 3.0 3.5 4.0
IDSmax. mA 10 9.0 8.3 7.6 6.8 6.1 5.4 4.2 3.1 . 2.2 2.0 1.1 0.5 0.0
IDStypo mA 7.0 6.0 5.4 4.6 4.0 3.3 2.7 1.7 0.8 0.2 0.0 0.0 0.0 0.0
IDSmin. mA 4.0 3.0 2.2 1.6 1.0 0.5 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0
N-Channel JFET
Typevos max. VDCmax. Vcs max. P max. TJ max. IDSS g",.. -v,. VOIIS rtl
Derale 8.Itl
VOIIS Volts VOlls @25°C above 25°C
2N3822 SO SO 50 300 mW 175°C 2 mA 3000 n 6 50 KG 2 mwrc 0.59°C/mW-
BFW 11 (typical) 30 30 30 300 mW 200°C 7 mA 5000 n 2.5 SOKG - 0.59° C/mW