datasheet buh1215

8/12/2019 Datasheet BUH1215

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BUH1215

HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR

STMicroelectronics PREFERREDSALESTYPE

HIGH VOLTAGE CAPABILITY VERYHIGH SWITCHING SPEED

APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR

TV AND MONITORS

DESCRIPTIONThe BUH1215 is manufactured usingMultiepitaxial Mesa technology for cost-effectivehigh performance and uses a Hollow Emitterstructure to enhance switching speeds.The BUH series is designed for use in horizontaldeflectioncircuits in televisionsand monitors.

INTERNAL SCHEMATIC DIAGRAM

January 1999

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Uni tVCB O Collector-Base Voltage (I E = 0) 1500 VVCE O Collector-Emitter Voltage (I B = 0) 700 VVEBO Emitter-Base Voltage (I C = 0) 10 V

IC Collector Current 16 AICM Collector Peak Current (t p < 5 ms) 22 A

IB Base Current 9 AIBM Base Peak Current (t p < 5 ms) 12 A

P t ot Total Dissipation at T c = 25 o C 200 WTst g Storage Temperature -65 to 150 o CT j Max. Operating Junction Temperature 150 o C

12 3

TO-218

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THERMAL DATA

R thj-case Thermal Resistance Junction-case Max 0.63 o C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

ICES Collector Cut-offCurrent (V BE = 0)

VCE = 1500 VVCE = 1500 V T j = 125 o C

0.22

mAmA

IEBO Emitter Cut-off Current(IC = 0)

VEB = 5 V 100 µA

VCEO(sus) Collector-EmitterSustaining Voltage

IC = 100 mA 700 V

VEB O Emitter-Base Voltage(IC = 0)

IE = 10 mA 10 V

VCE(sat) ∗ Collector-EmitterSaturation Voltage

IC = 12 A I B = 2.4 A 1.5 V

VBE(sat) ∗ Base-EmitterSaturation Voltage

IC = 12 A I B = 2.4 A 1.5 V

hF E∗ DC Current Gain I C = 12 A V CE = 5 VIC = 12 A V CE = 5 V T j = 100 o C

75

10 14

ts

tf

RESISTIVE LOADStorage TimeFall Time

VCC = 400 V I C = 12 AIB1 = 2 A I B2 = -6 A 1.5

110µsns

ts

tf

INDUCTIVE LOADStorage TimeFall Time

IC = 12 A f = 31250 HzIB1 = 2 A I B2 = -1.5 A

Vceflyback = 1050 sin π5

10 6 t V

4220

µsns

tstf

INDUCTIVE LOADStorage TimeFall Time

IC = 6 A f = 64 KHzIB1 = 1 A V BE(off) = -2 A

Vceflyback = 1200 sin π5

10 6 t V

3.5180

µsns

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area Thermal Impedance

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Derating Curve

Collector Emitter SaturationVoltage

Power Losses at 64 KHz

DC Current Gain

Base Emitter Saturation Voltage

Switching Time Inductive Load at 64 KHz(see figure 2)

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Reverse Biased SOA

In order to saturate the power switch and reduceconduction losses, adequate direct base currentIB1 has to be provided for the lowest gain h FE at100 oC (line scan phase). On the other hand,negative base current I B2 must be provided thetransistor to turn off (retrace phase).Most of the dissipation, especially in thedeflection application, occurs at switch-off so it is

essential to determine the value of I B2 whichminimizes power losses, fall time t f and,consequently, T j. A new set of curves have beendefined to give total power losses, t s and t f as afunction of I B1 at 64 KHz scanningfrequencies for

choosing the optimum negative drive. The testcircuit is illustrated in figure 1.The values of L and C are calculated from thefollowing equations:12

L (I C )2 = 12

C (V CEfly )2

ω = 2 πf = 1√ L C

Where I C = operating collector current, V CEfly=flyback voltage, f= frequency of oscillation duringretrace.

BASE DRIVE INFORMATION

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Figure 1: Inductive Load Switching Test Circuits.

Figure 2: Switching Waveformsin a Deflection Circuit

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DIM.mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.7 4.9 0.185 0.193

C 1.17 1.37 0.046 0.054

D 2.5 0.098

E 0.5 0.78 0.019 0.030

F 1.1 1.3 0.043 0.051

G 10.8 11.1 0.425 0.437

H 14.7 15.2 0.578 0.598

L2 – 16.2 – 0.637

L3 18 0.708

L5 3.95 4.15 0.155 0.163

L6 31 1.220

R – 12.2 – 0.480

Ø 4 4.1 0.157 0.161

R

A

C D

E

H

F

G

L6

¯

L3L2

L5

1 2 3

TO-218 (SOT-93) MECHANICAL DATA

P025A

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Information furnished isbelieved to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license isgranted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication aresubject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics productsare not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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1999 STMicroelectronics – Printed in Italy – All Rights ReservedSTMicroelectronics GROUP OF COMPANIES

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