7/31/2019 datasheet tic116d

1/6

7/31/2019 datasheet tic116d

2/6

TIC116 SERIES

SILICON CONTROLLED RECTIFIERS

2

APRIL 1971 - REVISED JUNE 2000

P R O D U C T I N F O R M A T I O N

NOTE 5: This parameter must be measured using pulse techniques, tp = 300 s, duty cycle 2 %. Voltage sensing-contacts, separate from

the current carrying contacts, are located within 3.2 mm from the device body.

electrical characteristics at 25C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

IDRMRepetitive peak

off-state currentVD = rated VDRM TC = 110C 2 mA

IRRMRepetitive peak

reverse currentVR = rated VRRM IG = 0 TC = 110C 2 mA

IGT Gate trigger current VAA = 12 V RL = 100 tp(g) 20 s 8 20 mA

VGT Gate trigger voltage

VAA = 12 V

tp(g) 20 s

RL = 100 TC = - 40C2.5

VVAA = 12 V

tp(g) 20 s

RL = 100 0.8 1.5

VAA = 12 V

tp(g) 20 s

RL = 100 TC = 110C0.2

IH Holding current

VAA = 12 V

Initiating IT = 100 mA

TC = - 40C100

mAVAA = 12 V

Initiating IT = 100 mA 40

VTOn-state

voltageIT = 8 A (see Note 5) 1.7 V

dv/dtCritical rate of rise of

off-state voltageVD = rated VD IG = 0 TC = 110C 400 V/s

thermal characteristics

PARAMETER MIN TYP MAX UNIT

RJC Junction to case thermal resistance 3 C/W

RJA Junction to free air thermal resistance 62.5 C/W

7/31/2019 datasheet tic116d

3/6

3

APRIL 1971 - REVISED JUNE 2000

TIC116 SERIES

SILICON CONTROLLED RECTIFIERS

P R O D U C T I N F O R M A T I O N

THERMAL INFORMATION

Figure 1. Figure 2.

Figure 3. Figure 4.

AVERAGE ON-STATE CURRENT

TC

- Case Temperature - C

30 40 50 60 70 80 90 100 110

IT(AV)-MaximumAverageOn-StateCurrent-A

0

2

4

6

8

10

12

14

16TI03AA

DERATING CURVE

Continuous DC

Conduction

Angle

0 180

= 180

MAX ANODE POWER LOSS

IT

- Continuous On-State Current - A

01 1 10 100

PA-MaxContinuous

AnodePowerDissipated-W

01

1

10

100TI03AB

ON-STATE CURRENT

vs

TJ

= 110C

SURGE ON-STATE CURRENT

Consecutive 50 Hz Half-Sine-Wave Cycles

1 10 100

ITM

-PeakHa

lf-Sine-WaveCurrent-A

1

10

100TI03AC

CYCLES OF CURRENT DURATION

vs

TC 70C

No Prior Device Conduction

Gate Control Guaranteed

TRANSIENT THERMAL RESISTANCE

Consecutive 50 Hz Half-Sine-Wave Cycles

1 10 100

RJC(t)-Transien

tThermalResistance-C/W

01

1

10TI03AD

CYCLES OF CURRENT DURATIONvs

7/31/2019 datasheet tic116d

4/6

TIC116 SERIES

SILICON CONTROLLED RECTIFIERS

4

APRIL 1971 - REVISED JUNE 2000

P R O D U C T I N F O R M A T I O N

TYPICAL CHARACTERISTICS

Figure 5. Figure 6.

Figure 7. Figure 8.

GATE TRIGGER CURRENT

TC

- Case Temperature - C

-50 -25 0 25 50 75 100 125

IGT-GateTriggerCurrent-mA

1

10

TC03AA

CASE TEMPERATURE

vs

VAA

=12 V

RL

= 100

tp(g)

20 s

GATE TRIGGER VOLTAGE

TC

- Case Temperature - C

-50 -25 0 25 50 75 100 125

VGT-Gate

TriggerVoltage-V

0

02

04

06

08

1TC03AB

CASE TEMPERATURE

vs

VAA

=12 V

RL

= 100

tp(g)

20 s

HOLDING CURRENT

TC

- Case Temperature - C

-50 -25 0 25 50 75 100 125

IH-Ho

ldingCurrent-mA

1

10

100TC03AD

CASE TEMPERATURE

vs

VAA

= 12 V

Initiating IT

= 100 mA

PEAK ON-STATE VOLTAGE

ITM

- Peak On-State Current - A

01 1 10 100

VTM

-PeakOn-StateVoltage-V

0

05

1

15

2

25TC03AE

vsPEAK ON-STATE CURRENT

TC

= 25 C

tP

= 300 s

Duty Cycle 2 %

7/31/2019 datasheet tic116d

5/6

5

APRIL 1971 - REVISED JUNE 2000

TIC116 SERIES

SILICON CONTROLLED RECTIFIERS

P R O D U C T I N F O R M A T I O N

TO-2203-pin plastic flange-mount package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plasticcompound. The compound will withstand soldering temperature with no deformation, and circuit performance

characteristics will remain stable when operated in high humidity conditions. Leads require no additional

cleaning or processing when used in soldered assembly.

MECHANICAL DATA

TO-220

ALL LINEAR DIMENSIONS IN MILLIMETERS

1,231,32

4,20

4,70

1 2 3

0,97

0,66

10,0

10,4

2,54

2,95

6,0

6,6

14,55

15,32

12,7

14,1

5,6

6,1

1,07

1,47

2,34

2,74

4,68

5,28

3,71

3,96

0,41

0,64

2,40

2,90

NOTE A: The centre pin is in electrical contact with the mounting tab.

18,0 TYP.

7/31/2019 datasheet tic116d

6/6

TIC116 SERIES

SILICON CONTROLLED RECTIFIERS

6

APRIL 1971 - REVISED JUNE 2000

P R O D U C T I N F O R M A T I O N

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any

semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the

information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in

accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI

deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily

performed, except as mandated by government requirements.

PI accepts no liability for applications assistance, customer product design, software performance, or infringement

of patents or services described herein. Nor is any license, either express or implied, granted under any patent

right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,machine, or process in which such semiconductor products or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE

SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

Copyright 2000, Power Innovations Limited