development of monolithic active pixel sensors for the ... · high granularity (pixel pitch ~ o(10...

Development of Monolithic Active Pixel Sensors

for the next generation of vertex detectors

Jerome Baudot, IPHC Strasbourgon behalf of groups in:

IPHC-Strasbourg, BNL,DAPNIA/CE-Saclay, DESY, GSIIPN-Lyon, LBNL, Uni. Hamburg,Uni. Frankfurt

ICATPP, Como, 2007 October 8-12

Basic operation & performances Forthcoming applications Ongoing developments

2Mimosa-MAPS, ICATPP'07, Como

Principle of operationPrinciple of operation

Main features

thin sensitive volume = epitaxial layer (>10 m for MIP)

high granularity (pixel pitch ~ O(10 m) O(m))

integrated treatment micro-circuits allows for

• low noise level 10-30 e-

• signal processing

Fabrication

standard CMOS process

• fast proto. turn-over

require an epi. layer

Prototypes produced

between 1998 and 2007

>20 chips = Mimosa serie

7 different technologiesone pixel


Basic performancesBasic performances

Mimosa 9

techno. AMS 0.35 m OPTO (~11 m epi)

pixel pitch 20, 30 & 40 m

analog serial output of pixels

fabricated in 2003

results for 20°C,pitch 20 m

ENC~10 e-


Basic performancesBasic performances

Mimosa 9

techno. AMS 0.35 m OPTO (~11 m epi)

pixel pitch 20, 30 & 40 m

analog serial output of pixels

fabricated in 2003

similar perf. for Temp = -20 to 40 ˚C

results for 20°C,pitch 20 m

ENC~10 e-


Radiation toleranceRadiation tolerance

Mimosa 11 and 15 prototypes

techno. AMS 0.35 m OPTO, fabricated in 2005

pixel diode Mimosa 9-like+ thick oxide removed+ P+ guard ring

6Mimosa-MAPS, ICATPP'07, Comointegration time (ms)

eq

. nois

e (

e-)

radtol design

standard design





Ionizing radiation

Mimosa 11 at 40 °C

exposed to 500 kRad

7Mimosa-MAPS, ICATPP'07, Comointegration time (ms)

eq

. nois

e (

e-)

radtol design

standard design


Non-ionizing radiation

Mimosa 15 cooled at -20 °C

exposed up to ~1013 neq

/cm2




Ionizing radiation

Mimosa 11 at 40 °C

exposed to 500 kRad


Forthcoming applications - 1Forthcoming applications - 1

Vertexing in Heavy-ion experiments

physics = heavy flavors production in exclusive channels

tech. choice motivated by the thin-ness + room temp. operation

moderate single point resolution ~< 10 m







STAR @ RHIC-BNL (2009-2012)

0-suppress digital (0/1) output200 s read-out

dissipated power<100 mW/cm2

STAR Heavy Flavor Tracker: 100 Mpixels

20 cm







STAR @ RHIC-BNL (2009-2012)

0-suppress digital (0/1) output100 s read-out

dissipated power<100 mW/cm2

CBM @ FAIR-GSI (201x)

10 s read-out with ADC integrated

1013 - 1015 neq

/cm2/year

1 to 10 MRad/year

STAR Heavy Flavor Tracker: 100 Mpixels

20 cm



Vertexing at the International Linear Collider (~2017)

physics = (light and heavy) flavor tag of every jets

track impact parameter resolution < 5 m @ p=∞

material budget ~ 0.1 – 0.2 % X0

beamstrahlung ~< 20 hits/cm2



25 cm

300-500 Mpixels






CMOS based proposition in 5 layers

• pitch 20-33 m

• read-out time 25 – 100 s

• digital output with few bits ADCs



25 cm

300-500 Mpixels






CMOS based proposition in 5 layers

• pitch 20-33 m

• read-out time 25 – 100 s

• digital output with few bits ADCs

EUDET (2009)

• beam test telescope with 6 ref. 2D-planes

• few Mpixels with digital read-out (0/1)

• resol. on extrapolated track ~ 1 m with 3 GeV e- (DESY)

Beta imaging: see Rémi Barbier's talk from Tuesday parallel session VIII


Ongoing developments - 1Ongoing developments - 1

read-out speed & signal processing

in pixel CDS + // column readout + discrimination at column end

• Mimosa 8 (2003) Mimosa 16 (2006) Mimosa 22 (Oct. 2007)

• TSMC 0.25 m AMS 0.35 m OPTO

• pitch: 25 m 18 m

• columns = 128 pixels 576 pixels

zero-suppression

• chip without pixels: Suze (summer 2007)

• merging Mimosa 22 and Suze in late 2008 = final Eudet sensor,targeted integration time 200 s

ADCs

• varous stand-alone chips tested or on test4 to 5 bits,

• merging Mimosa 16 and ADC in 2009 = ILC prototype

ADC/discri.

0-suppress.

pixel col. sensor


Integrated signal processingIntegrated signal processing

Mimosa 16

AMS 0.35 m OPTO

pixel pitch 25 m

(24+8) columns of 128 pixles

digital read-out

• integration time 51 s

• 24 discriminators (1 per col.)

preliminaryfrom beam test



Large (real) size sensors

Mimosa 18 (fab. 2006/07)

• pitch 10 m, serial analog read-out

• 1/4 Mpixels, 25 mm2

• used in a 4 planes telescope configurationin DESY and CERN beams (residual)~1 m

25 to 50 mm level arm




Mimosa 18 (fab. 2006/07)




25 to 50 mm level armsignal to noise

Mimosa 18




Mimosa 18 (fab. 2006/07)




very high granularity

pitch 5 m Mimosa 21C (fab. Sept. 2007)

Integration issues

thinning

• 50 m thick (individual) chips repeatidly obtained from industry

cooling and mechanical support

• direct electrical connection of chip to printed diamond ladder

25 to 50 mm level armsignal to noise

Mimosa 18


Summary & outlooksSummary & outlooks

MAPS based on CMOS sensor technology

demonstrated excellent performancesSNR>25, efficiency>99%, s.p. resolution~1m

operate at room T and offers some rad. tolerance

are mature for first applications shortly coming

• STAR around 2009 and 2012

• EUDET in 2008/09

Roadmap to most demanding ILC, CBM

includes read-out speed & signal processingbased on column parallel r.o. + ADC + 0-supression

aims at full proto readiness by 2010

very good preparation for new technology (3D)


! BACKUP SLIDES !


Temperature of operationTemperature of operation

Mimosa 9


The STAR Heavy Flavor TrackerThe STAR Heavy Flavor Tracker

Motivation

measure charm production in exclusive channels

Requirements

single point resolution 10 m

sensor thickness 80 m

operate at 30-40 °C

dissipated power < 100 mW/cm2

read-out time 5 ms withdigital output

radiation tolerance

• ionizing ~20 kRad/year

• non-ion. ~ 1011 neq

/cm2/year


The CBM requirementsThe CBM requirements

Motivation

study of hot and dense (deconfined) matter in n+n and A+A collisions

measure charm and beauty production in exclusive channels

Requirements

single point resolution < 5 m

sensor thickness 50 m

operate at 30-40 °C

dissipated power < 100 mW/cm2

read-out time 10 s

radiation tolerance

• ionizing ~1-10 MRad/year

• non-ion. ~ 1013 - 1015 neq

/cm2/year


CMOS sensors design for ILCCMOS sensors design for ILC

Layer Radius ladder width # ladders pitch r.o. time # pixels dissipated power <diss. power>

mm mm W W

L0 15 7 20 20 23 25 100 <5

L1 25 15 26 25 50 65 130 <7

L2 37 24 24 3 100 50 90 <5

L3 48 24 32 33 100 80 120 <6

L4 60 24 40 33 100 100 150 <8

Total 142 320 <600 W <30 W

m s


Early signal processingEarly signal processing

Mimosa 8 prototype

techno. TSMC 0.25 m

epi. layer < 7 m

(24+8) columns x 128 rows

pixel pitch 25 m

fabricated in 2003collaboration IPHC - CE-Saclay

Digital read-out

Correlated Double Samplingin pixel

columns read-out in parallel

One discriminator per column


ADC studiesADC studies

Designer proto. status # bits # chanels Fr.o. (Mhz) dim (mm2) diss. Power (mW)LPSC ADC 1 tested 5 815-25 43x1500 1700 ADC 2 in test 4 8 25 40x943 8000

ADC 3 in fab. 4 >8 25LPCC ADC 4 tested 5,5 1 10 230x400 20000

ADC 5 in test 5,5 1 10 40x1100 1000DAPNIA ADC 6 tested 5 4 4 25x1000 300

ADC 7 tested 5 4 4 25x1000 300IPHC ADC 8 testing 4 16 10 25x1385 660 ADC 9 testing 4 16 10 25x1540 545

development of monolithic active pixel sensors for the ... · high granularity (pixel pitch ~ o(10...

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