Download - Highly photo-sensitive OTFT
Hybrid Nano Structure Research Lab. in Physics, http://hynsr.korea.ac.kr
Highly photo-sensitive OTFT
Organic Thin Film Transistor (OTFT)
S (Au) D (Au)
Gate (doped Si wafer)Insulator (SiO2)
Active layer
hν
Si
Si
4(HP3T)-benzene4(HPBT)-benzene TIPS-pentacene
0 20 40 60 80
1000
2000
3000
4000
5000
6000
0 20 40 60 80100
200
300
400
500
I
d/P
inc (
A/W
)
Optical Power (W/cm2)
4(HP3T)-benzene
I
d/P
inc (
A/W
)
Optical Power (W/cm2)
4(HPBT)-benzene
-40 -20 0 20 40
10-9
10-8
10-7
10-6
10-5
dark light
(ex=436 nm, 6.8W/cm2)
Vd= -50 V
-I d (A
)
Vg (V)
Iph/Idark
= 4×103
Photo-sensitivity (A/W) ΔId (≡ Id,ph−Id,dark ) /Pinc
Material 4(HPBT)-benzene
4(HP3T)-benzene
ΔId/Pinc
~4300±1300 A/W
~390±88
A/W
Hybrid Nano Structure Research Lab. in Physics, http://hynsr.korea.ac.kr
Memory operation with gate-field and light
Organic Thin Film Transistor (OTFT)
250 300 35010-10
10-9
10-8
10-7
10-6
10-5
10-4
Vd= -50V light (, 30W/cm2) , V
g= -50V ()
-I d (A)
Time (s)
Vg= 0V (,,) Vg=20V (,,)
①
② ③
④
On state
Off state
Write Erase
Read (on)
Read (off)
Memory operation processes: [writing-reading(on-state)-erasing-reading(off-state)]
High reproducibility and retention ability (>1h)
0 1 2 3 4 61 62 63 64 65
10-9
10-8
10-7
10-6
10-5
......
light power = 30 W/cm2
I d (A)
Time (min)
Hybrid Nano Structure Research Lab. in Physics, http://hynsr.korea.ac.kr
Organic Thin Film Transistor (OTFT)
Flexible OTFT
Channel width
Channellength
Active layer
Source Drain
Gate
Pentacene
CH
CH
CO
O
CH
CH2
n
CH
CH
C O
O
CH
CH2
n
CHCH
CO
O
CH
CH2
n
CHHC
C O
O
CH
CH2
n UV
Poly(vinyl cinnamate) (PVCN)
O O
S
OO
S
O O
S
OO
S n
Poly(3,4-ethylenedioxythiophene) (PEDOT)
-30 -20 -10 0
-0.10
-0.08
-0.06
-0.04
-0.02
0.00
-35 V
-25 V
-15 V
-5 V5 V
I ds (A
)
Vd (V)
-40 -30 -20 -10 0 10
10-9
10-8
10-7
0.0000
0.0001
0.0002
0.0003
-Ids
(A)
Vg (V)
(-I ds
)1/2 (
A1/
2)
Active layer: PentaceneElectrodes: PEDOTInsulating layer: PVCN
