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AC-coupled n-in-p pixel detectors on MCzsilicon with atomic layer deposition (ALD)
grown thin film process
A. Gädda1,3), J. Ott1,5), S. Bharthuar1), M. Kalliokoski 1,5), A. Karadzhinova-Ferrer2), E. Brücken1),S. Kirschenmann1), V. Litichevsky1), M. Golovleva1), L. Martikainen1), T. Naaranoja1), V. Chmill2),M. Bezak2), P. Luukka1,4) and J. Härkönen2)
1) Helsinki Institute of Physics (HIP), Helsinki, Finland2) Ruđer Bošković Institute (RBI), Zagreb, Croatia3) Advacam Oy, Espoo, Finland4) Lappeenranta University of Technology5) Aalto University
12th International ”Hiroshima” Symposium on the Development and Application of Semiconductor Tracking Detectors(HSTD12) at Hiroshima, Japan 1
HDST12296
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Outline
1. HIP CMS upgrade and research projects• HIP location and background• Project members
2. Detector R&D• For prototype processing• Detector process flow
3. Characterization and selected results
Summary
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Dr Jaakko H. .(Photograph 2004)
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HIP location and background
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• The institute is responsible for the Finnishresearch collaboration with CERN.
• The HIP CMS Upgrade Project is in charge of theFinnish participation in the CMS Tracker and itsfuture upgrade, as well as participation in the(silicon) endcap region of the CMS MIP TimingDetector.
6km10km
Finland: CERN member since 1991
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CMS experiment upgrade anddetector R&D
Compact Muon Solenoid (CMS) experiment at CERN LHC• Finland had a significant role in the Phase I pixel upgrade:
delivery of 250 full pixel modules +• Currently the modules in the innermost layer of the CMS pixel
detector need to be replaced• UBM, Plating and
Flip chip bonding: Advacam• BB Quality assurance: HIP
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HIP CMS upgrade andRBI PaRaDeSEC project teams
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Msc.LauraMartikainen*
Dr. AneliyaKaradzhinova-Ferrer
Msc.PirkittaKoponen
Dr. Jaakko Härkönen
Dr. ValeryChmill
Msc. MihaelaBezak*
Dr. MattiKalliokoski *PhD student
Msc. AkikoGädda*
Msc. JenniferOtt*
Msc. ShudhashilBharthuar*
Msc. StefanieKirschenmann*
Dr. EijaTuominen
Prof. Dr. PanjaLuukka
Dr. ErikBrücken
Dr. VladyslavLitichevskyi
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CMS experiment upgrade anddetector R&D
• Next generation pixel sensor(general requirements)
• Radiation hardness• Relatively low costs• Feasibility in large scale / industrial production• Robustness
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Measurement and characterizationHIP knowledge and skills
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FOR PROTOTYPE PROCESSING
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Micronova and Nanofabrication Centercleanroom facilities in Espoo
812th International ”Hiroshima” Symposium on the Development and Application of Semiconductor Tracking Detectors
(HSTD12) at Hiroshima, Japan
Main Cleanroom spec.
Total Area 2 600 m2
(M1, M2 with Aalto Univ.)Process tool IC, non ICWafer size 4 - 8 inchCleanroom Classification
ISO 4…ISO 6(10…1000)
Clean baysTemperature 21 °C ± 0,5 °CRelative humidity 45 % ± 5%
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Magnetic Czochralski silicon(MCz-Si)
• High resistivity MCz-Si• High level of oxygen (typically 1016-1017 cm-3)• Adjustable oxygen content by magnetic fields• Available over 150 mm wafer sizes• Depletion layer affected by
a) oxygen concentrationb) thermal history (process)
• Cost effectiveness compared to FZ
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Atomic Layer Deposition (ALD)
• ALD is pinhole free deposition• ALD results in conformal conformal coating• ALD provides interesting material thin films
• Metal oxides e.g. Al2O3, TiO2, SnO2, ZnO, HfO2 etc.
• ALD can tailor amount and type of oxide charge
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Conformal coverage in ALD[1]S.Franssila Beneq TFS-500 batch-type ALD reactor
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DETECTOR PROCESS FLOW
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Process Flow
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Si sensor waferP-type 150mm( >4 kOhmcm)
Dry oxidation
RIE SiO2 and Sietch
RIE SiO2 and Sietch
BHF SiOx etchBHF SiOx etch
Flip ChipBonding
(RCA clean)(RCA clean)
Aligmentmarks
lithography*
DICINGDICING
Read outchip
Read outchip
PCB Assembly
Diodetest
Wire bondingImplantationLithography*
RCA cleanRCA clean
Dry oxidationDrive-in
BHF SiOx etchBHF SiOx etch
ALD Al2O3depositionALD Al2O3deposition
Contactopenings
lithography*
Al sputtering
Contactmetallizationlithography*
ALD or PVDTiN deposition
ALD or PVDTiN deposition
Bias resitorslithography*
TiN etchTiN etch
(Sintering)
UBMlithography*
UBMsputtering
UBMsputtering
Metal lift-offMetal lift-off
Detectortest
*lithography = coat/expose/develop
Ion implantationBoth sides Al etchAl etch Al etchAl etch
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Detector design and outcome
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PSI46dig pixeldetector
Pixel array:52 columns × 80 rows= 4160 pixels
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[2] J. Ott et al., [3] Jaakko Härkönen
Detector bias design
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Bias connection via Al metal line Bias connection via Implantation window
PSI46dig pixel detector
70µm
120µm
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Very high uniformity+/- 1.5 um
Solder bumps• The read out chip (ROC) is PSI46dig used in CMS experiment.• Solder bump (~29um dia.)
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Bump height uniformity
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Hybridization• Flip Chip bonder
– Align X,Y and ϴ (microscope optics)– Leveling (autocollimator)– Thermocompression bonding (⁰C, Kg ,Sec.)
Ø Alignment accuracy: 0.5umØ Post_biond accuracy: 3um
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Green color cross = ChipRed color cross = substrate
Aligned
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CHARACTERIZATION ANDSELECTED RESULTS
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TCT measurements at HIP
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Voltage scan with IR (670nm)
VFD = 40V
spatial scan performed at 100V65 um
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TCT xy-area scans for pixel detectors
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1160nm
▪ Each TCT xy-scan isabout 60 000 datapoints.
▪ The amplitude of thesignal is converted intocolor scale.
[3] Jaakko Härkönen
670nm
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TCT area scans for 50 m pixelsߤ
20
Laser Settings:- 1064 nm- 50 Hz- 1000 x 1000um2
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Source testHIP AC-coupled pixel detector
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-PSI46digi design-Flip chip bonded detector-60keV Gamma from Am-241- 8000-15000s irradiation time- 3cm distance
34/4160 < 1% Am241 spectrum
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Summary
▪ We fabricated 150mm p-MCz Si wafers with our sensor design.▪ Detectors are processed at Micronova / Nanofabrication center in Finland.
▪ Atomic Layer Deposition (ALD) technology has many properties forradiation detector fabrication processes.
▪ AC-coupling of small pixels connected with each other by metal-nitridethin film bias resistors.
▪ Flip-Chip bonding of sensor and CMS PSI 46dig CMOS ROC wasperformed.
▪ Pixel detectors were tested both HIP and RBI.
▪ Currently, protective passivation by ALD-HfOx
is being researched (ref: see slide 11 right picture).12th International ”Hiroshima” Symposium on the Development and Application of Semiconductor Tracking Detectors
(HSTD12) at Hiroshima, Japan 22
* Citation slide is available late slide
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Thank you for your attention.
Dr Jaakko H Photograph. .( )
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* Citations
1. Sami Franssila, John Wiley & Sons, Incorporated 2010, Introduction toMicrofabrication Second Edition
2. J. Ott et al., Presented at 33rd RD50 Workshop, CERN, Geneva, Switzerland,November 28th 2018, Processing of pixel detectors on p-type MCz silicon usingatomic layer deposition (ALD) grown aluminium oxidehttps://indico.cern.ch/event/754063/contributions/3222806/attachments/1760772/2865963/JOtt_RD50_Nov18_3.pdf
3. Jaakko Härkönen, Presented at Croatian Particle Physics Days, Dec 09 20194. Esa Tuovinen, PROCESSING OF RADIATION HARD PARTICLE DETECTORS ON
CZOCHRALSKI SILICON (Doctoral dissertation), 2008
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http://paradesec.irb.hr/http://research.hip.fi/hwp/cmsupg/http://research.hip.fi/detlab/index.htmhttp://www.micronova.fi/
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intentionally blank page
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Backup slides: from Dr. Jaakko H.”When pixel technology meets Arts....” by Jaako Härkönen
Each square is TCT xy-scan of about60 000 data points.The amplitude of the signal isconvertedinto color scale.
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Backup slides: ALD process for metaloxide deposition
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(A) Al-OH* + Al(CH3) 3 Al-O-Al-(CH3)2* + CH4(B) Al-CH3* + H2O Al-OH* + CH4
2Al(CH3)3 + 3H2O Al2O3 + 6CH4
Ref. https://www.glassonweb.com/article/atomic-layer-deposition-glass-industry