1FEATURES
See mechanical drawings for dimensions.
NC – No internal connection
DRL PACKAGE
(TOP VIEW)
2GND
Y
VCC
6
5
1NC
3 4X1 X2
DESCRIPTION/ORDERING INFORMATION
SN74LVC1GX04-EPCRYSTAL OSCILLATOR DRIVER
SGDS029–SEPTEMBER 2007www.ti.com
2• Controlled Baseline • Low Power Consumption, 10 μA Max ICC
– One Assembly • ±24 mA Output Drive at 3.3 V– One Test Site • Ioff Supports Partial-Power-Down Mode
Operation– One Fabrication Site• Latch-Up Performance Exceeds 100 mA Per• Enhanced Diminishing Manufacturing Sources
JESD 78, Class II(DMS) Support• ESD Protection Exceeds JESD 22• Enhanced Product-Change Notification
– 2000-V Human-Body Model (A114-A)• Qualification Pedigree (1)
– 200-V Machine Model (A115-A)• Available in Texas Instruments NanoStar™and NanoFree™ Packages – 1000-V Charged-Device Model (C101)
• Supports 5-V VCC Operation• Inputs Accept Voltages to 5.5 V• One Unbuffered Inverter (SN74LVC1GU04) and
One Buffered Inverter (SN74LVC1G04)• Suitable for Commonly Used Clock
Frequencies:– 15 kHz, 3.58 MHz, 4.43 MHz, 13 MHz,
25 MHz, 26 MHz, 27 MHz, 28 MHz• Max tpd of 3.7 ns at 3.3 V(1) Component qualification in accordance with JEDEC and
industry standards to ensure reliable operation over anextended temperature range. This includes, but is not limitedto, Highly Accelerated Stress Test (HAST) or biased 85/85,temperature cycle, autoclave or unbiased HAST,electromigration, bond intermetallic life, and mold compoundlife. Such qualification testing should not be viewed asjustifying use of this component beyond specifiedperformance and environmental limits.
The SN74LVC1GX04 is designed for 1.65-V to 5.5-V VCC operation. This device incorporates theSN74LVC1GU04 (inverter with unbuffered output) and the SN74LVC1G04 (inverter) functions into a singledevice. The LVC1GX04 is optimized for use in crystal oscillator applications.
ORDERING INFORMATION (1)
TA PACKAGE (2) ORDERABLE PART NUMBER TOP-SIDE MARKING (3)
–55°C to 125°C SOT (SOT-553) – DRL Reel of 4000 CLVC1GX04MDRLREP CDD
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TIwebsite at www.ti.com.
(2) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.(3) DRL: The actual top-side marking has one additional character that designates the assembly/test site.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications ofTexas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2NanoStar, NanoFree are trademarks of Texas Instruments.
PRODUCTION DATA information is current as of publication date. Copyright © 2007, Texas Instruments IncorporatedProducts conform to specifications per the terms of the TexasInstruments standard warranty. Production processing does notnecessarily include testing of all parameters.
www.ti.com
DESCRIPTION/ORDERING INFORMATION (CONTINUED)
X1 X23 4
Y6
Absolute Maximum Ratings (1)
SN74LVC1GX04-EPCRYSTAL OSCILLATOR DRIVERSGDS029–SEPTEMBER 2007
X1 and X2 can be connected to a crystal or resonator in oscillator applications. The device provides an additionalbuffered inverter (Y) for signal conditioning (see Figure 3). The additional buffered inverter improves the signalquality of the crystal oscillator output by making it rail to rail.
NanoStar™ and NanoFree™ package technology is a major breakthrough in IC packaging concepts, using thedie as the package.
This device is fully specified for partial-power-down applications using Ioff (Y output only). The Ioff circuitrydisables the outputs, preventing damaging current backflow through the device when it is powered down.
FUNCTION TABLE
OUTPUTSINPUTX1 X2 Y
H L H
L H L
LOGIC DIAGRAM (POSITIVE LOGIC)
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VCC Supply voltage range –0.5 6.5 V
VI Input voltage range (2) –0.5 6.5 V
VO Voltage range applied to Y output in the high-impedance or power-off state (2) –0.5 6.5 V
VO Voltage range applied to any output in the high or low state (2) (3) –0.5 VCC + 0.5 V
IIK Input clamp current VI < 0 –50 mA
IOK Output clamp current VO < 0 –50 mA
IO Continuous output current ±50 mA
Continuous current through VCC or GND ±100 mA
θJA Package thermal impedance (4) 142 °C/W
Tstg Storage temperature range –65 150 °C
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratingsonly, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operatingconditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The input and output negative-voltage ratings may be exceeded if the input and output current ratings are observed.(3) The value of VCC is provided in the recommended operating conditions table.(4) The package thermal impedance is calculated in accordance with JESD 51-7.
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Recommended Operating Conditions (1)
SN74LVC1GX04-EPCRYSTAL OSCILLATOR DRIVER
SGDS029–SEPTEMBER 2007
MIN MAX UNIT
Operating 1.65 5.5
VCC Supply voltage Data retention only 1.5 V
Crystal oscillator use 2
VIH High-level input voltage VCC = 1.65 V to 5.5 V 0.75 × VCC V
VIL Low-level input voltage VCC = 1.65 V to 5.5 V 0.25 × VCC V
VI Input voltage 0 5.5 V
X2, Y 0 VCCVO Output voltage V
Y output only, Power-down mode, VCC = 0 V 0 5.5
VCC = 1.65 V –4
VCC = 2.3 V –8
IOH High-level output current –16 mAVCC = 3 V
–24
VCC = 4.5 V –32
VCC = 1.65 V 4
VCC = 2.3 V 8
IOL Low-level output current 16 mAVCC = 3 V
24
VCC = 4.5 V 32
VCC = 1.8 V ± 0.15 V, 2.5 V ± 0.2 V 20
Δt/Δv Input transition rise or fall rate VCC = 3.3 V ± 0.3 V 10 ns/V
VCC = 5 V ±0.5 V 10
TA Operating free-air temperature –55 125 °C
(1) All unused inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report,Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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Electrical Characteristics
Switching Characteristics
Operating Characteristics
SN74LVC1GX04-EPCRYSTAL OSCILLATOR DRIVERSGDS029–SEPTEMBER 2007
over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN TYP (1) MAX UNIT
IOH = –100 μA 1.65 V to 5.5 V VCC – 0.1
IOH = –4 mA 1.65 V 1.2
IOH = –8 mA 2.3 V 1.9VOH VI = 5.5 V or GND V
IOH = –16 mA 2.43 V
IOH = –24 mA 2.3
IOH = –32 mA 4.5 V 3.8
IOL = 100 μA 1.65 V to 5.5 V 0.1
IOL = 4 mA 1.65 V 0.45
IOL = 8 mA 2.3 V 0.3VOL VI = 5.5 V or GND V
IOL = 16 mA 0.43 V
IOL = 24 mA 0.63
IOL = 32 mA 4.5 V 0.70
II X1 VI = 5.5 V or GND 0 to 5.5 V ±5 μA
Ioff X1, Y VI or VO = 5.5 V 0 ±10 μA
ICC VI = 5.5 V or GND, IO = 0 1.65 V to 5.5 V 10 μA
Ci VI = VCC or GND 3.3 V 7 pF
(1) All typical values are at VCC = 3.3 V, TA = 25°C.
over recommended operating free-air temperature range, CL = 30 pF or 50 pF (unless otherwise noted) (see Figure 2)
VCC = 3.3 V VCC = 5 VFROM TO ± 0.3 V ± 0.5 VPARAMETER UNIT(INPUT) (OUTPUT)
MIN MAX MIN MAX
X2 0.8 3.7 0.8 3.2tpd X1 ns
Y (1) 2 7.8 2 5
(1) X2 – no external load
TA = 25°C
VCC = 3.3 V VCC = 5 VTESTPARAMETER UNITCONDITIONS TYP TYP
Cpd Power dissipation capacitance f = 10 MHz 24 35 pF
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PARAMETER MEASUREMENT INFORMATION
VM
thtsu
From OutputUnder Test
CL(see Note A)
LOAD CIRCUIT
S1VLOAD
Open
GND
RL
RL
Data Input
Timing InputVI
0 V
VI
0 V0 V
tw
Input
VOLTAGE WAVEFORMSSETUP AND HOLD TIMES
VOLTAGE WAVEFORMSPROPAGATION DELAY TIMES
INVERTING AND NONINVERTING OUTPUTS
VOLTAGE WAVEFORMSPULSE DURATION
tPLH
tPHL
tPHL
tPLH
VOH
VOH
VOL
VOL
VI
0 VInput
OutputWaveform 1S1 at VLOAD(see Note B)
OutputWaveform 2
S1 at GND(see Note B)
VOL
VOH
tPZL
tPZH
tPLZ
tPHZ
VLOAD/2
0 V
VOL + V∆
VOH - V∆
≈0 V
VI
VOLTAGE WAVEFORMSENABLE AND DISABLE TIMES
LOW- AND HIGH-LEVEL ENABLING
Output
Output
tPLH/tPHLtPLZ/tPZLtPHZ/tPZH
OpenVLOADGND
TEST S1
NOTES: A. CL includes probe and jig capacitance.B. Waveform 1 is for an output with internal conditions such that the output is low, except when disabled by the output control.
Waveform 2 is for an output with internal conditions such that the output is high, except when disabled by the output control.C. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω.D. The outputs are measured one at a time, with one transition per measurement.E. tPLZ and tPHZ are the same as tdis.F. tPZL and tPZH are the same as ten.G. tPLH and tPHL are the same as tpd.H. All parameters and waveforms are not applicable to all devices.
OutputControl
VM VM
VM VM
VM VM
VM
VM VM
VM
VM
VM
VI
VM
VM
1.8 V ± 0.15 V2.5 V ± 0.2 V3.3 V ± 0.3 V5 V ± 0.5 V
1 MΩ1 MΩ1 MΩ1 MΩ
VCC RL
2 × VCC2 × VCC
6 V2 × VCC
VLOAD CL
15 pF15 pF15 pF15 pF
0.15 V0.15 V0.3 V0.3 V
V∆
VCCVCC3 VVCC
VI
VCC/2VCC/21.5 VVCC/2
VMtr/tf
≤2 ns≤2 ns
≤2.5 ns≤2.5 ns
INPUTS
SN74LVC1GX04-EPCRYSTAL OSCILLATOR DRIVER
SGDS029–SEPTEMBER 2007
Figure 1. Load Circuit and Voltage Waveforms
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PARAMETER MEASUREMENT INFORMATION
VM
thtsu
From OutputUnder Test
CL(see Note A)
LOAD CIRCUIT
S1VLOAD
Open
GND
RL
RL
Data Input
Timing InputVI
0 V
VI
0 V0 V
tw
Input
VOLTAGE WAVEFORMSSETUP AND HOLD TIMES
VOLTAGE WAVEFORMSPROPAGATION DELAY TIMES
INVERTING AND NONINVERTING OUTPUTS
VOLTAGE WAVEFORMSPULSE DURATION
tPLH
tPHL
tPHL
tPLH
VOH
VOH
VOL
VOL
VI
0 VInput
OutputWaveform 1S1 at VLOAD(see Note B)
OutputWaveform 2
S1 at GND(see Note B)
VOL
VOH
tPZL
tPZH
tPLZ
tPHZ
VLOAD/2
0 V
VOL + V∆
VOH - V∆
≈0 V
VI
VOLTAGE WAVEFORMSENABLE AND DISABLE TIMES
LOW- AND HIGH-LEVEL ENABLING
Output
Output
tPLH/tPHLtPLZ/tPZLtPHZ/tPZH
OpenVLOADGND
TEST S1
NOTES: A. CL includes probe and jig capacitance.B. Waveform 1 is for an output with internal conditions such that the output is low, except when disabled by the output control.
Waveform 2 is for an output with internal conditions such that the output is high, except when disabled by the output control.C. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω.D. The outputs are measured one at a time, with one transition per measurement.E. tPLZ and tPHZ are the same as tdis.F. tPZL and tPZH are the same as ten.G. tPLH and tPHL are the same as tpd.H. All parameters and waveforms are not applicable to all devices.
OutputControl
VM VM
VM VM
VM VM
VM
VM VM
VM
VM
VM
VI
VM
VM
1.8 V ± 0.15 V2.5 V ± 0.2 V3.3 V ± 0.3 V5 V ± 0.5 V
1 kΩ500 Ω500 Ω500 Ω
VCC RL
2 × VCC2 × VCC
6 V2 × VCC
VLOAD CL
30 pF30 pF50 pF50 pF
0.15 V0.15 V0.3 V0.3 V
V∆
VCCVCC3 VVCC
VI
VCC/2VCC/21.5 VVCC/2
VMtr/tf
≤2 ns≤2 ns
≤2.5 ns≤2.5 ns
INPUTS
SN74LVC1GX04-EPCRYSTAL OSCILLATOR DRIVERSGDS029–SEPTEMBER 2007
Figure 2. Load Circuit and Voltage Waveforms
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APPLICATION INFORMATION
Values of C1 and C2 are chosen so that and C1 ≡ C2. Rs is the current-limiting resistor, and the
of C2 at resonance frequency, i.e., . RF is the feedback resistor that is used to bias the inverter in the
RF ≅ 2.2 MΩ
CL ≅ 16 pF
C1 ≅ 32 pF C2 ≅ 32 pF
X2
X1CLOAD RLOAD
a) Logic Diagram View
Rs ≅ 1 kΩ
Y
SN74LVC1GU04Portion
SN74LVC1G04Portion
SN74LVC1GX04-EPCRYSTAL OSCILLATOR DRIVER
SGDS029–SEPTEMBER 2007
Figure 3 shows a typical application of the SN74LVC1GX04 in a Pierce oscillator circuit. The buffered inverter(SN74LVC1G04 portion) produces a rail-to-rail voltage waveform. The recommended load for the crystal shownin this example is 16 pF. The value of the recommended load (CL) can be found in the crystal manufacturer'sdata sheet.
value depends on the maximum power dissipation of the crystal. Generally, the recommended value of Rs isspecified in the crystal manufacturer's data sheet and, usually, this value is approximately equal to the reactance
linear region of operation. Usually, the value is chosen to be within 1 MΩ to 10 MΩ.
Figure 3. Oscillator Circuit
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APPLICATION INFORMATION
NC
Rs ≅ 1 kΩCL = 16 pF
C2 ≅ 32 pF
GND
X1
CLOAD RLOAD
RF ≅ 2.2 MΩ
C1 ≅ 32 pF
1
2
3 4
5
6 Y
b) Oscillator Circuit in DBV or DCK Pinout
VCC
X2
Practical Design Tips
SN74LVC1GX04-EPCRYSTAL OSCILLATOR DRIVERSGDS029–SEPTEMBER 2007
Figure 3. Oscillator Circuit (continued)
• The open-loop gain of the unbuffered inverter decreases as power-supply voltage decreases. This decreasesthe closed-loop gain of the oscillator circuit. The value of Rs can be decreased to increase the closed-loopgain, while maintaining the power dissipation of the crystal within the maximum limit.
• Rs and C2 form a low-pass filter and reduce spurious oscillations. Component values can be adjusted, basedon the desired cutoff frequency.
• C2 can be increased over C1 to increase the phase shift and help in start-up of the oscillator. Increasing C2may affect the duty cycle of the output voltage.
• At high frequency, phase shift due to Rs becomes significant. In this case, Rs can be replaced by a capacitorto reduce the phase shift.
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APPLICATION INFORMATION
Testing
SN74LVC1GX04-EPCRYSTAL OSCILLATOR DRIVER
SGDS029–SEPTEMBER 2007
After the selection of proper component values, the oscillator circuit should be tested using these components.To ensure that the oscillator circuit performs within the recommended operating conditions, follow these steps:1. Without a crystal, the oscillator circuit should not oscillate. To check this, the crystal can be replaced by its
equivalent parallel-resonant resistance.2. When the power-supply voltage drops, the closed-loop gain of the oscillator circuit reduces. Ensure that the
circuit oscillates at the appropriate frequency at the lowest VCC and highest VCC.3. Ensure that the duty cycle, start-up time, and frequency drift over time is within the system requirements.
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PACKAGE OPTION ADDENDUM
www.ti.com 4-May-2017
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status(1)
Package Type PackageDrawing
Pins PackageQty
Eco Plan(2)
Lead/Ball Finish(6)
MSL Peak Temp(3)
Op Temp (°C) Device Marking(4/5)
Samples
CLVC1GX04MDRLREP ACTIVE SOT-5X3 DRL 6 4000 Green (RoHS& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM -55 to 125 CDD
V62/07632-01XE ACTIVE SOT-5X3 DRL 6 4000 Green (RoHS& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM -55 to 125 CDD
(1) The marketing status values are defined as follows:ACTIVE: Product device recommended for new designs.LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.PREVIEW: Device has been announced but is not in production. Samples may or may not be available.OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substancedo not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI mayreference these types of products as "Pb-Free".RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide basedflame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuationof the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finishvalue exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on informationprovided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken andcontinues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
PACKAGE OPTION ADDENDUM
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Addendum-Page 2
OTHER QUALIFIED VERSIONS OF SN74LVC1GX04-EP :
• Catalog: SN74LVC1GX04
NOTE: Qualified Version Definitions:
• Catalog - TI's standard catalog product
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device PackageType
PackageDrawing
Pins SPQ ReelDiameter
(mm)
ReelWidth
W1 (mm)
A0(mm)
B0(mm)
K0(mm)
P1(mm)
W(mm)
Pin1Quadrant
CLVC1GX04MDRLREP SOT-5X3 DRL 6 4000 180.0 8.4 1.98 1.78 0.69 4.0 8.0 Q3
PACKAGE MATERIALS INFORMATION
www.ti.com 3-Aug-2017
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
CLVC1GX04MDRLREP SOT-5X3 DRL 6 4000 202.0 201.0 28.0
PACKAGE MATERIALS INFORMATION
www.ti.com 3-Aug-2017
Pack Materials-Page 2
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