Revision of EUV Mask ITRS
Roadmap (LITH6)
Long He (SMT/INTC), Frank Goodwin (SMT), Patrick Kearney (SMT),
Greg McIntyre IBM, Emily Gallagher (IBM), Pei-yang Yan (Intel),
Brian Cha (Samsung), Obert Wood (GF), Pawitter Mangat (GF), Jim Wiley (ASML),
John Zimmerman (ASML), Kazuya Ota (Nikon), Shusuke Yoshitake (Nuflare),
Yoshiaki Ikuta (AGC), Patrick Naulleau (LBNL), Naoya Hayashi (DNP),
Franklin Kalk (Toppan Photomask)
October 6, 2013, Toyama, Japan
2011 LITH6 EUVL Mask Requirements
Summary of 2013 LITH6 Revision
Row Description Revision / Addition
1 8x magnification (new) 8x mask itrs’d for 2019 insertion
2 Soft defect (new) Requirement identical to hard defect
3 Maximum blank defect size with
mitigation (new)
Values of the spec = Minimum primary
feature size
4 ML roughness (new) RSM = 0.05 nm for all years
5 Alternating PSM phase MTT and
uniformity (new)
Requirement identical to optical mask
6 Attenuated PSM absorber thickness
MTT and uniformity (new)
Targeted to be consistent with optical
mask, but leakage and phase specified
through absorber thickness
7 CD uniformities Relaxed by ~25% (back to optical mask)
8 Absorber thickness uniformity Tightened by 20%
9 Substrate defect Specified to 20 nm for all years
10 Updated / added notes Updated for clarity and simplicity
Summary of 2013 LITH6 Revision
Other Items Visited Consensus
1 EUV pellicle Not included: Pellicle is in its feasibility study
phase. Pellicle-less protection remains to be the
primary approach.
2 Double / multiple patterning No need: No EUV-specific requirement beyond
timeline
3 Backside defect Not included: Impact to overlay may be
implementation-specific
4 Data volume No significant change needed at this time, but
revisit in future revisions
Mask Related Litho Chapter Revision
Four mask topics will be discussed in the Chapter:
1. High NA and its impact to EUV mask
2. Blank defect mitigation strategy
3. EUV phase shift mask
4. ML roughness
8x Magnification Impact to Mask ITRS
Note [1]: This specification linearly scales
to mask magnification. To improve process
margin for device yield, the net increase of
the specification from changing to 8x
magnification is scaled back by 50%.
Added EUVL Phase Shift Mask Requirements
193nm EUV
Alt.PSM Alternating PSM phase MTT (± degree) 1 1
Alternating PSM phase uniformity (degree, range) 2 2
Att. PSM
Attenuated PSM transmission MTT (± % of target) 4
Attenuated PSM transmission uniformity
(% of target, range) 3
Attenuated PSM phase MTT (± degree) 3
Attenuated PSM phase uniformity ( degree , range) 3
Attenuated PSM absorber thickness MTT (± % of target) 1.4
Attenuated PSM absorber thickness uniformity (% of target,
range) 1.1
• Intended to be consistent with 193nm PSM masks. Specifications are verified
through modeling (not discussed here).
• For Attenuated PSM, phase = 180o and transmission is in the magnitude of 6%.
Added Multilayer Roughness Requirement R
oughness in M
L S
tack A
bs.
(courtesy of Patrick Naulleau, LBNL)
Note [V]: Multilayer Roughness – The maximum roughness for spatial frequency of
1/10µm (?) in ML film stack in the central 136mm x 136mm area. Note the
specification is based on modeling and estimate, targeting to limit ML roughness
contribution to resist LWR under 10%. How ML surface roughness relates to
the underlying ML film stack roughness is not specified in the roadmap.
Pro
po
sed
IT
RS
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TIME FRAME ACTION
AUGUST –
SEPTEMBER
1) Chapter writing assignments are
identified within TWGS
2) ITRS ITWG tables and figures prepared
OCTOBER 15
EXCEL & POWEPOINT FILES DUE
Final drafts of TABLES’ and FIGURES’ files [excel and
powerpoint]
COMPLETED & DUE to IRC reviewers
OCTOBER 31 IRC returns to ITWGs
NOVEMBER 15
WORD FILE DUE
Final draft text [word document file] of chapter writing
COMPLETED & DUE to IRC team reviewers for
technical and editorial remarks/questions.
NOVEMBER 30 IRC returns to ITWGs
2013 ITRS DATES
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TIME FRAME ACTION
NOVEMBER 15 Presentations due to Japan for translation
DECEMBER 4-5 AND 6 2013 Winter Workshop and Public Forum Meetings in Japan
DECEMBER 15
FREEZE DATE— ALL ITWG REMARKS ARE DUE TO IRC
from all reviews
JANUARY 15 IRC Regional Approval
MARCH 31
ITRS IS POSTED
2013 ITRS DATES