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University of TehranDepartment of Electrical and Computer Engineering
ISSCC 2013 / SESSION 18 / ADVANCED EMBEDDED SRAM / 18.1
A 20nm 112Mb SRAM in High-κ Metal-Gate with Assist Circuitry for Low-Leakage and Low-VMIN Applications
by:Milad Zamani
May 2013
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Contents
IntroductionProposed structure Implementation & Layout Conclusions
Introduction
Proposed structure
Implementation & Layout
Conclusions
1/17
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SRAM Structure
Stability
Leakage
Introduction
Introduction
SRAM StructureStability Leakage
2/17
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SRAM Structure
◦ Cell
◦ Decoder
◦ Sense Amplifier
◦ Write Driver
◦ Timing
Introduction
3/17
SRAM Structure
Stability
Leakage
Jan M. Rabaey, Anantha P. handrakasan, Borivoje Nikolić, “Digital integrated circuits: a design perspective” , Prentice Hall; 2 edition, January 3, 2003.
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Stability
◦ Static Noise Margin (SNM)
Introduction
4/17
SRAM Structure
Stability
Leakage
Jan M. Rabaey, Anantha P. handrakasan, Borivoje Nikolić, “Digital integrated circuits: a design perspective” , Prentice Hall; 2 edition, January 3, 2003.
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Stability
◦ Dynamic Noise MarginIntroduction
Seng Oon Toh; Zheng Guo; Liu, T.-J.K.; Nikolic, B.; , "Characterization of Dynamic SRAM Stability in 45 nm CMOS," Solid-State Circuits, IEEE Journal of , vol.46, no.11, pp.2702-2712, Nov. 20115/17
SRAM Structure
Stability
Leakage
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Introduction
6/17
SRAM Structure
Stability
Leakage
Subthreshold SRAM
◦ Leakage Current
Verma, N.; Chandrakasan, A.P.; , "A 256 kb 65 nm 8T Subthreshold SRAM Employing Sense-Amplifier Redundancy," Solid-State Circuits, IEEE Journal of , vol.43, no.1, pp.141-149, Jan. 2008
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Proposed Circuit
PSWL & BT-NBL
Proposed structure
Proposed Circuitpartially suppressed wordline (PSWL) scheme and
bitline-length-tracked negative-bitline-boosting (BT-NBL) scheme
Power management
7/17
Power management
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Proposed structure
8/17
Proposed Circuit
Chang, Jonathan; Chen, Yen-Huei; Cheng, Hank; Chan, Wei-Min; Liao, Hung-Jen; Li, Quincy; Chang, Stanley; Natarajan, Sreedhar; Lee, Robin; Wang, Ping-Wei; Lin, Shyue-Shyh; Wu, Chung-Cheng; Cheng, Kuan-Lun; Cao, Min; Chang, George H., "A 20nm 112Mb SRAM in High-к metal-gate with assist circuitry for low-leakage and low-VMIN applications," Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2013
PSWL & BT-NBL
Power management
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Proposed structure
9/17
Proposed Circuit
Chang, Jonathan; Chen, Yen-Huei; Cheng, Hank; Chan, Wei-Min; Liao, Hung-Jen; Li, Quincy; Chang, Stanley; Natarajan, Sreedhar; Lee, Robin; Wang, Ping-Wei; Lin, Shyue-Shyh; Wu, Chung-Cheng; Cheng, Kuan-Lun; Cao, Min; Chang, George H., "A 20nm 112Mb SRAM in High-к metal-gate with assist circuitry for low-leakage and low-VMIN applications," Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2013
PSWL & BT-NBL
Power management
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Proposed structure
10/17
Proposed Circuit
Chang, Jonathan; Chen, Yen-Huei; Cheng, Hank; Chan, Wei-Min; Liao, Hung-Jen; Li, Quincy; Chang, Stanley; Natarajan, Sreedhar; Lee, Robin; Wang, Ping-Wei; Lin, Shyue-Shyh; Wu, Chung-Cheng; Cheng, Kuan-Lun; Cao, Min; Chang, George H., "A 20nm 112Mb SRAM in High-к metal-gate with assist circuitry for low-leakage and low-VMIN applications," Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2013
PSWL & BT-NBL
Power management
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11/17
Implementation & Layout
layout
Structure Structure layout
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12/17
BlockRT
BlockLT
BlockRB
BlockLB
Central Unit
256
Row
s
128 ColumnsAddress/Data Reg.
B0 B19
SA0
WD0
SA31
WD31
SA0
WD0
SA31
WD31
Add
ress
/Con
trol
WL
WL
WL
SS
Row
Pre
-dec
oder
RT
SS
Row
Pre
-dec
oder
LT
WL
WL
WL
Data Line RData Line L
SS
Row
Pre
-dec
oder
RB
SS
Row
Pre
-dec
oder
LB
Dat
a Li
ne
Wor
d 0
Wor
d 1
Wor
d 0
Wor
d 1
Timing Control
Dum
my
Col
umn
Pos
t Dec
oder
Pos
t Dec
oder
Post D
ecoderP
ost Decoder
CLK, CS, WE
A0-A12
DO0-DO31
Implementation & Layout
layout
Structure
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13/17
Implementation & Layout
layout
Structure
Chang, Jonathan; Chen, Yen-Huei; Cheng, Hank; Chan, Wei-Min; Liao, Hung-Jen; Li, Quincy; Chang, Stanley; Natarajan, Sreedhar; Lee, Robin; Wang, Ping-Wei; Lin, Shyue-Shyh; Wu, Chung-Cheng; Cheng, Kuan-Lun; Cao, Min; Chang, George H., "A 20nm 112Mb SRAM in High-к metal-gate with assist circuitry for low-leakage and low-VMIN applications," Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2013
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14/17
Implementation & Layout
layout
Structure
The die area of the test-chip is 40.3mm2 with 448 (2048×134) SRAM macros
Chang, Jonathan; Chen, Yen-Huei; Cheng, Hank; Chan, Wei-Min; Liao, Hung-Jen; Li, Quincy; Chang, Stanley; Natarajan, Sreedhar; Lee, Robin; Wang, Ping-Wei; Lin, Shyue-Shyh; Wu, Chung-Cheng; Cheng, Kuan-Lun; Cao, Min; Chang, George H., "A 20nm 112Mb SRAM in High-к metal-gate with assist circuitry for low-leakage and low-VMIN applications," Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2013
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With the SD, PSD and DR power-management modes, the SRAM leakage current is reduced to 16.6% for full macro shut down, 44.7% of peripheral circuits shut down and 34.2% for the peripheral circuits shut down with arrays entering into data-retention mode
Nothing about stability !!!
Conclusion
15/16
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Trends
Trends
16/17
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Trends
Trends
17/17
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Refrence Jan M. Rabaey, Anantha P. handrakasan, Borivoje Nikolić, “Digital integrated circuits: a design perspective” ,
Prentice Hall; 2 edition, January 3, 2003.
Seng Oon Toh; Zheng Guo; Liu, T.-J.K.; Nikolic, B.; , "Characterization of Dynamic SRAM Stability in 45 nm CMOS," Solid-State Circuits, IEEE Journal of , vol.46, no.11, pp.2702-2712, Nov. 2011
Verma, N.; Chandrakasan, A.P.; , "A 256 kb 65 nm 8T Subthreshold SRAM Employing Sense-Amplifier Redundancy," Solid-State Circuits, IEEE Journal of , vol.43, no.1, pp.141-149, Jan. 2008
Chang, Jonathan; Chen, Yen-Huei; Cheng, Hank; Chan, Wei-Min; Liao, Hung-Jen; Li, Quincy; Chang, Stanley; Natarajan, Sreedhar; Lee, Robin; Wang, Ping-Wei; Lin, Shyue-Shyh; Wu, Chung-Cheng; Cheng, Kuan-Lun; Cao, Min; Chang, George H., "A 20nm 112Mb SRAM in High-к metal-gate with assist circuitry for low-leakage and low-VMIN applications," Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2013
Trends in ISSCC 2013