Download - Vishay-4N35-datasheet
-
4N35/ 4N36/ 4N37/ 4N38
Document Number 83717Rev. 1.5, 27-Jan-05
Vishay Semiconductors
www.vishay.com1
i179004i179004
1
2
3
6
5
4
B
C
E
A
C
NC
PbPb-free
e3
Optocoupler, Phototransistor Output, With Base Connection
Features Isolation Test Voltage 5300 VRMS Interfaces with common logic families Input-output coupling capacitance < 0.5 pF Industry Standard Dual-in line 6-pin package Lead-free component Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals Underwriters Laboratory File #E52744
DIN EN 60747-5-2 (VDE0884)DIN EN 60747-5-5 pendingAvailable with Option 1
ApplicationsAC mains detectionReed relay drivingSwitch mode power supply feedbackTelephone ring detectionLogic ground isolationLogic coupling with high frequency noise rejection
DescriptionThis data sheet presents five families of Vishay Indus-try Standard Single Channel Phototransistor Cou-plers.These families include the 4N35/ 4N36/ 4N37/4N38 couplers.Each optocoupler consists of gallium arsenide infra-red LED and a silicon NPN phototransistor.These couplers are Underwriters Laboratories (UL)listed to comply with a 5300 VRMS isolation test volt-age.This isolation performance is accomplished throughVishay double molding isolation manufacturing pro-cess. Comliance to DIN EN 60747-5-2(VDE0884)/DIN EN 60747-5-5 pending partial discharge isolationspecification is available for these families by orderingoption 1.
These isolation processes and the Vishay ISO9001quality program results in the highest isolation perfor-mance available for a commecial plastic phototransis-tor optocoupler.The devices are available in lead formed configura-tion suitable for surface mounting and are availableeither on tape and reel, or in standard tube shippingcontainers.Note: Designing with data sheet is cover in Application Note 45
Order Information
For additional information on the available options refer to Option Information.
Part Remarks4N35 CTR > 100 %, DIP-64N36 CTR > 100 %, DIP-64N37 CTR > 100 %, DIP-64N38 CTR > 20 %, DIP-64N35-X006 CTR > 100 %, DIP-6 400 mil (option 6)4N35-X007 CTR > 100 %, SMD-6 (option 7)4N35-X009 CTR > 100 %, SMD-6 (option 9)4N36-X007 CTR > 100 %, SMD-6 (option 7)4N36-X009 CTR > 100 %, SMD-6 (option 9)4N37-X006 CTR > 100 %, DIP-6 400 mil (option 6)4N37-X009 CTR > 100 %, SMD-6 (option 9)
-
www.vishay.com2
Document Number 83717Rev. 1.5, 27-Jan-05
4N35/ 4N36/ 4N37/ 4N38Vishay Semiconductors
Absolute Maximum RatingsTamb = 25 C, unless otherwise specifiedStresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device isnot implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absoluteMaximum Rating for extended periods of the time can adversely affect reliability.
Input
Output
Coupler
Parameter Test condition Symbol Value UnitReverse voltage VR 6.0 VForward current IF 60 mASurge current 10 s IFSM 2.5 APower dissipation Pdiss 100 mW
Parameter Test condition Symbol Value UnitCollector-emitter breakdown voltage
VCEO 70 V
Emitter-base breakdown voltage
VEBO 7.0 V
Collector current IC 50 mA(t 1.0 ms) IC 100 mA
Power dissipation Pdiss 150 mW
Parameter Test condition Symbol Value UnitIsolation test voltage VISO 5300 VRMSCreepage 7.0 mmClearance 7.0 mmIsolation thickness between emitter and detector
0.4 mm
Comparative tracking index per DIN IEC 112/VDE0303,part 1
175
Isolation resistance VIO = 500 V, Tamb = 25 C RIO 1012 VIO = 500 V, Tamb = 100 C RIO 1011
Storage temperature Tstg - 55 to + 150 COperating temperature Tamb - 55 to + 100 CJunction temperature Tj 100 CSoldering temperature max. 10 s dip soldering:
distance to seating plane 1.5 mm
Tsld 260 C
-
4N35/ 4N36/ 4N37/ 4N38
Document Number 83717Rev. 1.5, 27-Jan-05
Vishay Semiconductors
www.vishay.com3
Electrical CharacteristicsTamb = 25 C, unless otherwise specifiedMinimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineeringevaluation. Typical values are for information only and are not part of the testing requirements.
Input
1) Indicates JEDEC registered value
Output
1) Indicates JEDEC registered value
Coupler
1) Indicates JEDEC registered value
Parameter Test condition Symbol Min Typ. Max UnitForward voltage1) IF = 10 mA VF 1.3 1.5 V
IF = 10 mA, Tamb = - 55 C VF 0.9 1.3 1.7 V
Reverse current1) VR = 6.0 V IR 0.1 10 ACapacitance VR = 0, f = 1.0 MHz CO 25 pF
Parameter Test condition Part Symbol Min Typ. Max UnitCollector-emitter breakdown voltage1)
IC = 1.0 mA 4N35 BVCEO 30 V
4N36 BVCEO 30 V4N37 BVCEO 30 V4N38 BVCEO 80 V
Emitter-collector breakdown voltage1)
IE = 100 A BVECO 7.0 V
Collector-base breakdown voltage1)
IC = 100 A, IB = 1.0 A 4N35 BVCBO 70 V
4N36 BVCBO 70 V4N37 BVCBO 70 V4N38 BVCBO 80 V
Collector-emitter leakage current1)
VCE = 10 V, IF = 0 4N35 ICEO 5.0 50 nA
4N36 ICEO 5.0 50 nAVCE = 10 V, IF=0 4N37 ICEO 5.0 50 nAVCE = 60 V, IF = 0 4N38 ICEO 50 nAVCE = 30 V, IF = 0, Tamb = 100 C
4N35 ICEO 500 A
4N36 ICEO 500 A4N37 ICEO 500 A
VCE = 60 V, IF = 0, Tamb = 100 C
4N38 ICEO 6.0 A
Collector-emitter capacitance VCE = 0 CCE 6.0 pF
Parameter Test condition Symbol Min Typ. Max UnitResistance, input to output1) VIO = 500 V RIO 1011 Capacitance (input-output) f = 1.0 MHz CIO 0.5 pF
-
www.vishay.com4
Document Number 83717Rev. 1.5, 27-Jan-05
4N35/ 4N36/ 4N37/ 4N38Vishay Semiconductors
Current Transfer Ratio
1) Indicates JEDEC registered value
Switching Characteristics
1) Indicates JEDEC registered value
Typical Characteristics (Tamb = 25 C unless otherwise specified)
Parameter Test condition Part Symbol Min Typ. Max UnitDC Current Transfer Ratio1) VCE = 10 V, IF = 10 mA 4N35 CTRDC 100 %
4N36 CTRDC 100 %4N37 CTRDC 100 %
VCE = 10 V, IF = 20 mA 4N38 CTRDC 20 %VCE = 10 V, IF = 10 mA, TA = - 55 to + 100 C
4N35 CTRDC 40 50 %
4N36 CTRDC 40 50 %4N37 CTRDC 40 50 %4N38 CTRDC 30 %
Parameter Test condition Symbol Min Typ. Max UnitSwitching time1) IC = 2 mA, RL = 100 , VCC = 10 V ton, toff 10 s
Figure 1. Forward Voltage vs. Forward Current
i4n25_01
100101.10.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
IF - Forward Current - mA
V F-Fo
rward
Volta
ge-V TA = 55C
TA = 25C
TA = 85C
Figure 2. Normalized Non-Saturated and Saturated CTR vs. LED Current
i4n25_02
Normalized to:
0.0
0.5
1.0
1.5
0 1 10 100IF - LED Current - mA
NCTRNCTR(SAT)NC
TR-N
orm
lized
CTR CTRce(sat) Vce=0.4 V
Vce=10 V, IF=10 mA, TA=25C
TA=25C
-
4N35/ 4N36/ 4N37/ 4N38
Document Number 83717Rev. 1.5, 27-Jan-05
Vishay Semiconductors
www.vishay.com5
Figure 3. Normalized Non-saturated and Saturated CTR vs. LED Current
Figure 4. Normalized Non-saturated and saturated CTR vs. LED Current
Figure 5. Normalized Non-saturated and saturated CTR vs. LED Current
i4n25_03
100101.10.0
0.5
1.0
1.5
IF- LED Current - mA
NC
TR-N
orm
aliz
edC
TR
Normalized to:
CTRce(sat) Vce=0.4 VVce=10 V, IF=10 mA, TA=25C
NCTRNCTR(SAT)
TA=50C
i4n25_04
100101.10.0
0.5
1.0
1.5
IF - LED Current - mA
NC
TR-N
orm
aliz
edC
TR
Normalized to:
CTRce(sat) Vce=0.4 VVce=10 V, IF=10 mA, TA=25C
NCTRNCTR(SAT)
TA=70C
i4n25_05
100101.10.0
0.5
1.0
1.5
IF - LED Current - mA
NC
TR-N
orm
aliz
edC
TR
Normalized to:
CTRce(sat) Vce = 0.4 VVce=10 V, IF=10 mA, TA=25C
NCTRNCTR(SAT)
TA=85C
Figure 6. Collector-Emitter Current vs. Temperature and LED Current
Figure 7. Collector-Emitter Leakage Current vs.Temp.
Figure 8. Normalized CTRcb vs. LED Current and Temp.
i4n25_06
60504030201000
5
10
15
20
25
30
35
50C
70C85C
IF - LED Current - mA
Ice
-C
olle
ctor
Cur
rent
-m
A
25C
i4n25_07
1008060402002010
10
10
10
10
10
10
10
2
1
0
1
2
3
4
5
TA - Ambient Temperature - C
Iceo
-C
olle
ctor
-Em
itter
-nA
TypicalVce = 10 V
i4n25_08
Normalized to:
0.0
0.5
1.0
1.5
25C50C70C
IF - LED Current - mA
NC
TRcb
-N
orm
aliz
edC
TRcb
.1 1 10 100
Vcb=9.3 V, IF=10 mA, TA=25C
-
www.vishay.com6
Document Number 83717Rev. 1.5, 27-Jan-05
4N35/ 4N36/ 4N37/ 4N38Vishay Semiconductors
Figure 9. Normalized Photocurrent vs. IF and Temp.
Figure 10. Normalized Non-saturated HFE vs. Base Current and Temperature
Figure 11. Normalized HFE vs. Base Current and Temp.
i4n25_09
0.
Normalized to:
0.01
1
1
10
IF - LED Current - mA
Nor
mal
ized
Phot
ocur
rent
.1 1 10 100
IF=10 mA, TA=25C
Nib, TA=20CNib, TA= 25CNib, TA= 50CNib, TA= 70C
i4n25_10
0.4
0.6
1.0
1.2
Normalized to:
Ib - Base Current - A1 10 100 1000
Ib=20 A, Vce=10 V, TA=25C
25C
70C
20C
NH
FE-N
orm
aliz
edH
FE
0.8
i4n25_11
0.0
0.5
1.0
1.5
25C
20C
50C70C
NH
FE(sa
t)-N
orm
aliz
edSa
tura
ted
HFE
1 10 100 1000
Vce=10 V, Ib=20 ATA=25C
Vce=0.4 V
Ib - Base Current - A
Normalized to:
Figure 12. Propagation Delay vs. Collector Load Resistor
Figure 13. Switching Timing
Figure 14. Switching Schematic
i4n25_12
1
10
100
1000
RL - Collector Load Resistor - k
t PLH
-Pr
opa
gatio
nD
elay
-s
2.5
2.0
1.5
1.0.1 1 10 100
IF =10 mA,TA=25CVCC=5.0 V, Vth=1.5 V
tPLH
tPHL
t PH
L-Pr
opa
gatio
nD
elay
-s
i4n25_13
IF
tR
=1.5 V
VOtD
tS tFtPHL
tPLH
VTH
i4n25_14
VCC = 5.0 V
F=10 KHz,DF=50%
RL
VO
IF=10 mA
-
4N35/ 4N36/ 4N37/ 4N38
Document Number 83717Rev. 1.5, 27-Jan-05
Vishay Semiconductors
www.vishay.com7
Package Dimensions in Inches (mm)For 4N35/36/37/38..... see DIL300-6 Package dimension in the Package Section. For products with an option designator (e.g. 4N35-X006 or 4N36-X007)..... see DIP-6 Package dimensions in the Package Section.
DIL300-6 Package Dimensions
DIP-6 Package Dimensions
14770
i178004
.010 (.25)typ.
.114 (2.90).130 (3.0)
.130 (3.30)
.150 (3.81)
.031 (0.80) min.
.300 (7.62)typ.
.031 (0.80)
.035 (0.90).100 (2.54) typ.
.039(1.00)Min.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
pin one ID
654
123
18
39
.300.347(7.628.81)
4typ.
ISO Method A
-
www.vishay.com8
Document Number 83717Rev. 1.5, 27-Jan-05
4N35/ 4N36/ 4N37/ 4N38Vishay Semiconductors
min..315 (8.00)
.020 (.51).040 (1.02)
.300 (7.62)ref.
.375 (9.53).395 (10.03)
.012 (.30) typ..0040 (.102).0098 (.249)
15 max.
Option 9
.014 (0.35)
.010 (0.25).400 (10.16).430 (10.92)
.307 (7.8)
.291 (7.4)
.407 (10.36).391 (9.96)
Option 6
.315 (8.0)MIN.
.300 (7.62)TYP.
.180 (4.6)
.160 (4.1)
.331 (8.4)MIN.
.406 (10.3)MAX.
.028 (0.7)MIN.
Option 7
18450
-
4N35/ 4N36/ 4N37/ 4N38
Document Number 83717Rev. 1.5, 27-Jan-05
Vishay Semiconductors
www.vishay.com9
Ozone Depleting Substances Policy StatementIt is the policy of Vishay Semiconductor GmbH to1. Meet all present and future national and international statutory requirements.2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, GermanyTelephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
-
Legal Disclaimer NoticeVishay
Document Number: 91000 www.vishay.comRevision: 08-Apr-05 1
NoticeSpecifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, byestoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay'sterms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any expressor implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitnessfor a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.Customers using or selling these products for use in such applications do so at their own risk and agree to fullyindemnify Vishay for any damages resulting from such improper use or sale.
DatasheetDisclaimer