e-beam lithography - ::: 歡迎光臨中興大學物理系， …ezphysics.nchu.edu.tw/ctsp/e-beam...

E-beam lithography

Lithography 8^·�

平版印刷是由波西米亞的阿羅斯!塞尼菲爾德 (Alois Senefelder) 於1798年發明的

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在電子製造中，我們把設計圖，轉移到材料上形成電子結構的過程稱做微影術

Novel nanolithography techniques

E-beam FIB SPM

Direct writing Low throughput

Imprinting

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Method 方法 Feature Size ( mm) 尺寸大小

UV Photolithography UV光刻 1 Laser DWW 雷射直寫 1-2 Electron Beam 電子束 0.25-0.1 (可以更小)

Ion Beam 離子束 0.05-0.1 X-Ray Lithography X光刻 <0.1

光刻技術的進展

6äÿÌ6ä&m mask and maskless techniques

使用光罩的微影術不使用光罩的微影術直寫技術(direct writing)

電子束微影，離子束微影，雷射束

一般光刻方法

M.A.Schimdt MIT opencourse 3.155J/6.152J

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正光阻

矽晶片

二氧化矽正光阻

曝光

顯影

蝕刻

M.A.Schimdt MIT opencourse 3.155J/6.152J

負光阻

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光罩

正光阻

透光部分

光阻殘留部分

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http://britneyspears.ac/physics/fabrication/photolithography.htm

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光阻厚度：0.5mm~2.5mm

轉速：1200~4800rpm 時間：30~60sec

又稱軟烤

陳啟東，物理雙月刊21卷4期451(1999)

6ä�石英玻璃上鍍鉻產生不透光圖案

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圖案產生：e-beam 或laser-beam

顯影蝕刻鉻膜

移除光阻覆蓋保護層檢查/清潔/

修補

Toppan photomask Inc.

ā](etch)ÿĬĳ(lift-off) 舉離法蝕刻法

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基板

光阻光阻

基板

利用相同的光罩，製造的圖案剛好相反


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Types of electron emitter

Thermionic emitters: tungsten tip or LaB6 tip

cold-cathode type using tungsten single crystal emitters the thermally-assisted Schottky type, using emitters of zirconium oxide.

field emission guns (FEG)

Types of electron emitter

陳力俊等：材料電子顯微鏡學，精儀中心出版(1994)

Electron extraction

Brightness: Tungsten filament: LaB6: field emission=1:10:1000

Bias voltage

brightness

current

陳力俊等：材料電子顯微鏡學，精儀中心出版(1994)

Beam aperture

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Stigmator Astigmatism(È6ð�): =ï�Oo�õûº@>[��xp/��ýËå>�9į�,h)ą2È6ð�çĤę(Stigmator)Ĕĝ.

Stigmatoro�G�±: ��ĿôÄ{§�{1Ùoĳ�O,H2õûÞk§\�1\1Ù.

blanking deflectors & blanking aperture

H2Blenking deflector*�£ĥ§Beam£L,ħ>Blanking Aperture�.B¸�A[ú+2: 1. 2)ÖÊóĄW2ičwoBeam��. 2. =~ ĥo On/OffÌm4J�Ç,h)â�ą§Beam0>čw��Ä§\0>Blanking Aperture�. �

SE detector

CDEM

Faraday cup

MCP

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EELS

TEM Diffraction electron

SE

AES BSE

SE: depth 100A, energy<50eV

BSE: energy=e-beam energy

X-ray

Auger electron: 50eV~2keV

EELS: electron energy loss spectroscopy

E-beam lithography 流程

清洗晶片旋鋪光阻並烤乾

電子束曝光顯影及觀察

失敗

成功

設計圖案

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高壓電子源

電子鏡筒

樣品室高真空環境

抽氣系統

X signal Y signal

Beam blanker

樣品座

中興物理 Topcon SEM +NPGS系統

電子束控制器

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利用長鍊的聚合物有機分子，例如壓克力(PMMA)

電子束照射後，會將鍵結打斷


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figures from MicroChem

PMMA

基板

copolymer

T-gate

雙層阻劑lift-off製程

PMMA 旋鋪參數

軟烤時間: 10 分鐘 (PMMA)

旋鋪參數: Step1 - 500 rpm / 10秒 Step2 - 3000 rpm / 30秒

Nano-pattern generation system(NPGS)

Developed by J C Nabity in 1990s

Virtually any SEM, STEM, or FIB can be used with NPGS

Patterns are created using DesignCAD

NPGS Hardware

Required Connections (bold arrows): Analog XY Inputs; +/-3v to +/-10v range typical Picoammeter; read the beam current hitting the sample is required for lithography. Typical Connections (thin arrows): Image Signal; within +/-10v; used for NPGS Alignment feature. Blanker; within +/-5v, <200 mA;

NPGS software

Alignment (AL)

Pattern writing(PG)

CAD file

Writing parameters

Run file

Writing parameters<Alignment> 1.  Origin Offset(x,y):系統原點位置[0,0] 2.  Magnification:對 Alignment 時放大倍率[1000] 3.  Center-to-Center Distance(nm):電子束曝光時點對點之間距離[500] 4.  Line Spacing(nm):電子束掃描的間距[500] 5.  Configuration Parameter:[1] 6.  Measured Beam Current(pA):根據電流大小而定 7.  Dwell:掃描 Alignment 的劑量[20] <Patten> 1.  Origin Offset(x,y):系統原點位置[0,0] 2.  Magnification:寫圖形的放大倍率[1000] 3.  Center-to-Center Distance(nm):電子束曝光時點對點之間距離[5] 4.  Line Spacing(nm):電子束掃描的間距[5] 5.  Configuration Parameter:[1] 6.  Measured Beam Current(pA):根據電流大小而定 7. Dwell:根據圖型線寬的劑量(可選用 Area 或 Line)

E-beam 停留的點位置

E-beam 掃描方向

Center-to-center

Line spacing

Dosagearea dose (uC/cm2)

line dose (nC/cm)

point dose (fC)

Develop顯影劑： MIBK(Methyl isobutyl ketone)/IPA(sopropyl alcohol) 超音波震洗浸泡約30s~60s Rinse: IPA PMMA移除： Acetone

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•  Standard E-beam lithography and shadow evaporation of Al on Si substrate.

Suspended mask

PMMA 4%

PMMA 6% Ge

developping &

dry etching

I-shape island

Metal deposition

Al2O3 tunnel barrier

Metal deposition

e beam

基板旋轉28o

金屬線位移150nm

Why aluminum? The native oxide layer of aluminum serves as a high quality tunneling barrier

Al Al

AlOx

Oxidation parameter: Oxygen pressure 10~50mtorr

time : 1min~5min

Al/AlOx/Al junction specific capacitance: 45fF/mm2

Typical Al/AlOx/Al junction capacitance: 0.5~1fF

Sample gallery

E-beam+舉離法製作的電子元件

E-beam+蝕刻法製作的奈米結構

中興物理 Topcon SEM +NPGS系統

photo製程:大面積電極

利用Alignment key來將不同製程的圖案對準Alignment key

E-beam製程：細部電極

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75nm SiN

濕蝕刻 (KOH)

E-beam&乾蝕刻 (CF4 plasma)

500mm Si photo製程+濕蝕刻 :懸空薄膜

E-beam製程+乾蝕刻 :奈米孔洞

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Photo+lift-off :大面積電極

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liquid metal ion source (LIMS) Most widespread are instruments using gallium(Ga) ion sources

easy to build a Ga liquid metal ion source (LMIS)

W wire

tip

Electrode

Ga

Beam collumn Ion energy : 5-50 keV

Beam current : tens of nanoamps

Ion Damage

Ion Energy,keV Ga Damage layer thickness, A

In Damage layer thickness, A

5 78 57 10 126 88 20 199 133 30 262 171 40 307 195 50 364 240

be implanted into the top few nanometers of the surface

destructive to the specimen

sputter atoms from the surface

Dual beam system ýËĳ�O¼5�

*¹ïĥ� 5 to 30kV (5kV steps)

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Sample gallery

國家實驗院精儀中心

蝕刻法製作的光子晶體

蝕刻法製作的探針

沈積法製作的懸浮結構

沈積法製作的探針

e-beam lithography - ::: 歡迎光臨中興大學物理系， …ezphysics.nchu.edu.tw/ctsp/e-beam...

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