euv wavefront metrology system in euvaeuvlsymposium.lbl.gov/pdf/2005/poster/1-me-05... · euva euva...

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1 2005 International Symposium on Extreme Ultraviolet Lithography, Nov.7-9, 2005 Supported by NEDO EUV Wavefront Metrology System in EUVA EUVA EUV Metrology Laboratory Utsunomiya R&D Center (Canon) 1 Sagamihara R&D Center (Nikon) 2 University of Hyogo 3 University of Electro-Communications 4 Takayuki Hasegawa 1 , Seima Kato 1 , Chidane Ouchi 1 , Masanobu Hasegawa 1 , Hideo Yokota 1 , Yutaka Tanaka 1 , Katsumi Sugisaki 2 , Masashi Okada 2 , Jun Kawakami 2 ,Katsuhiko Murakami 2 , Yucong Zhu 2 , Katsura Otaki 2 , Zhi Qiang Liu 2 Jun Saito 2 , Masahito Niibe 3 , Mitsuo Takeda 4 E-mail: [email protected]

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Page 1: EUV Wavefront Metrology System in EUVAeuvlsymposium.lbl.gov/pdf/2005/poster/1-ME-05... · EUVA EUVA EUV Metrology Laboratory Utsunomiya R&D Center (Canon)1 Sagamihara R&D Center (Nikon)2

12005 International Symposium on Extreme Ultraviolet Lithography, Nov.7-9, 2005

Supported by NEDO

EUV Wavefront Metrology Systemin

EUVA

EUVA EUV Metrology LaboratoryUtsunomiya R&D Center (Canon)1

Sagamihara R&D Center (Nikon)2

University of Hyogo3

University of Electro-Communications4

Takayuki Hasegawa1, Seima Kato1, Chidane Ouchi1, Masanobu Hasegawa1, Hideo Yokota1, Yutaka Tanaka1, Katsumi Sugisaki2, Masashi Okada2,

Jun Kawakami2,Katsuhiko Murakami2, Yucong Zhu2, Katsura Otaki2, Zhi Qiang Liu2 Jun Saito2, Masahito Niibe3, Mitsuo Takeda4

E-mail: [email protected]

Page 2: EUV Wavefront Metrology System in EUVAeuvlsymposium.lbl.gov/pdf/2005/poster/1-ME-05... · EUVA EUVA EUV Metrology Laboratory Utsunomiya R&D Center (Canon)1 Sagamihara R&D Center (Nikon)2

22005 International Symposium on Extreme Ultraviolet Lithography, Nov.7-9, 2005

Supported by NEDOAbbreviations

EEI  EUV Experimental InterferometerEWMS EUV Wavefront Measurement SystemPO Projection OpticsPDI  Point Diffraction InterferometerLDI  Line Diffraction InterferometerLSI  Lateral Shearing InterferometeCGLSI Cross-Grating LSIFFT  Fast Fourier Transform method

Page 3: EUV Wavefront Metrology System in EUVAeuvlsymposium.lbl.gov/pdf/2005/poster/1-ME-05... · EUVA EUVA EUV Metrology Laboratory Utsunomiya R&D Center (Canon)1 Sagamihara R&D Center (Nikon)2

32005 International Symposium on Extreme Ultraviolet Lithography, Nov.7-9, 2005

Supported by NEDOOutline

1. Target of EUV Metrology Laboratory in EUVA

2. Reproducibility of PDI

3. Applicability of PDI to a six-mirror system

4. Improvement of CGLSI

5. Outline of EWMS

6. Summary

Page 4: EUV Wavefront Metrology System in EUVAeuvlsymposium.lbl.gov/pdf/2005/poster/1-ME-05... · EUVA EUVA EUV Metrology Laboratory Utsunomiya R&D Center (Canon)1 Sagamihara R&D Center (Nikon)2

42005 International Symposium on Extreme Ultraviolet Lithography, Nov.7-9, 2005

Supported by NEDOTarget of EUV Metrology Laboratory in EUVA

20062005200420032002

End of the Project

TestDesign

ExperimentFabricationDesign

EWMS

EEI (Schwarzschild Test Optics installed)

Result

EWMS (EUV Wavefront Metrology System)

A prototype interferometer to determine measurement methods for EWMS

An interferometer for six-mirror Projection Optics with 0.1nm accuracy

EEI (EUV Experimental Interferometer)

Target

Approach

Fabrication

Page 5: EUV Wavefront Metrology System in EUVAeuvlsymposium.lbl.gov/pdf/2005/poster/1-ME-05... · EUVA EUVA EUV Metrology Laboratory Utsunomiya R&D Center (Canon)1 Sagamihara R&D Center (Nikon)2

52005 International Symposium on Extreme Ultraviolet Lithography, Nov.7-9, 2005

Supported by NEDOReview of EEI

Cleanchamber

EEI Illuminator(NA:0.01)

Overall view of EEIInside View

Inside view of EEI

Test OpticsSchwarzschild NA 0.2Mag. 1/20

EUV beamline

Installed at NewSUBARU

of Univ. of Hyogo

EUV beam from undulator

Page 6: EUV Wavefront Metrology System in EUVAeuvlsymposium.lbl.gov/pdf/2005/poster/1-ME-05... · EUVA EUVA EUV Metrology Laboratory Utsunomiya R&D Center (Canon)1 Sagamihara R&D Center (Nikon)2

62005 International Symposium on Extreme Ultraviolet Lithography, Nov.7-9, 2005

Supported by NEDOResults of evaluation

PDI and CGLSI are potential candidates for EWMS

DLSI(Double Grating)

SLSI(Slit type)

LSI

Easy alignmentCGLSI(Cross Grating)

Two interferograms necessaryDifficult to determine astigmatism

Two interferograms necessaryDifficult to determine astigmatism

Two interferograms necessaryDifficult to determine astigmatism

LateralShearingInterferometer

Higher contrast than PDITwo interferograms necessary

LDI(Line)

High accuracyNarrow cover range of aberrationLarge loss of the light Intensity

PDI(Point)

Diffraction typeInterferometer

FeaturesInterferogramAvailable Methods

One

dim

ensi

onal

gra

ting

Y

X

Y

Y

Y

X

X

X

4-Window

Page 7: EUV Wavefront Metrology System in EUVAeuvlsymposium.lbl.gov/pdf/2005/poster/1-ME-05... · EUVA EUVA EUV Metrology Laboratory Utsunomiya R&D Center (Canon)1 Sagamihara R&D Center (Nikon)2

72005 International Symposium on Extreme Ultraviolet Lithography, Nov.7-9, 2005

Supported by NEDO

Pinhole

Test Optics

Window +Pinhole

CCD Camera

EUV Beam

Pinhole

Cross Grating

4 Windows

1-DimensionalGrating

Optical Configurations of PDI and CGLSI

PDI CGLSI(Cross Grating LSI)(Point Diffraction Interferometer)

Schwarzschild NA 0.2Mag. 1/20

Test Optics

Test Optics

CCD Camera

EUV Beam

Page 8: EUV Wavefront Metrology System in EUVAeuvlsymposium.lbl.gov/pdf/2005/poster/1-ME-05... · EUVA EUVA EUV Metrology Laboratory Utsunomiya R&D Center (Canon)1 Sagamihara R&D Center (Nikon)2

82005 International Symposium on Extreme Ultraviolet Lithography, Nov.7-9, 2005

Supported by NEDOReproducibility of PDI

Precise pinhole alignment is necessary to improve the reproducibility.

Interferogram

Fringe pitch changes with respect to the position of the pinhole. The alignment was improved using the fringe pitch.

Pitch of the fringes

1.26148.321.923

1.3058.614.882

1.3526.7258.201

Wavefront aberrationnm RMS

Alignment error ∆Y nm

Alignment error ∆X nm

Measurement number

Alignment error of the pinhole and the focus point causes error in the measurement.

Reproducibility was 0.103 nm RMS

Page 9: EUV Wavefront Metrology System in EUVAeuvlsymposium.lbl.gov/pdf/2005/poster/1-ME-05... · EUVA EUVA EUV Metrology Laboratory Utsunomiya R&D Center (Canon)1 Sagamihara R&D Center (Nikon)2

92005 International Symposium on Extreme Ultraviolet Lithography, Nov.7-9, 2005

Supported by NEDOReproducibility of PDI

7

5

3

0.0701.28Average

0.045Mean

wavefront Wm1.31

Average

0.0431.29

0.0501.32

0.040

0.032

0.0370.043

Difference from mean wavefront Wi-Wm nm RMS

1.31

1.33

1.321.36

WavefrontaberrationWi nm RMS

-0.3nm-10.0nm

-0.7nm-1.4nm

-5.5nm-17.7nm

-0.3nm-0.7nm6

-0.5nm0.9nm4

-18.7nm-6.0nm2

-8.0nm0.7nm1

Alignment error∆Y

Alignment error∆X

Measurement number i

Alignment error has been improved to better than 20 nm.Reproducibility of PDI has been improved to 0.045 nm RMS.

Measurement results after the improvement in alignment.

Page 10: EUV Wavefront Metrology System in EUVAeuvlsymposium.lbl.gov/pdf/2005/poster/1-ME-05... · EUVA EUVA EUV Metrology Laboratory Utsunomiya R&D Center (Canon)1 Sagamihara R&D Center (Nikon)2

102005 International Symposium on Extreme Ultraviolet Lithography, Nov.7-9, 2005

Supported by NEDOApplicability of PDI to a six-mirror system

Test optics for EEI Six-mirror PO for EWMS

NA 0.2Pinhole diameter 50nm

Reflectance(60%)^2

NA 0.25Pinhole diameter 30nm

decrease of the light intensity

Decrease due to the pinhole diameter.

Reflectance(60%)^6

NA 0.01Pinhole diameter 650nm

NA 0.0625Pinhole diameter 100nm

Decrease due to the increase in number of mirror.

We evaluate PDI at 1/20 of the standard light intensity in EEI.

Can PDI be applicable to six-mirror system with the reduced light intensity?

Page 11: EUV Wavefront Metrology System in EUVAeuvlsymposium.lbl.gov/pdf/2005/poster/1-ME-05... · EUVA EUVA EUV Metrology Laboratory Utsunomiya R&D Center (Canon)1 Sagamihara R&D Center (Nikon)2

112005 International Symposium on Extreme Ultraviolet Lithography, Nov.7-9, 2005

Supported by NEDOApplicability of PDI to a six mirror system

1/20 of the standard light intensity in EEIStandard light intensity in EEI

Obtained interferogramsThese interferograms were obtained under the same alignment of the pinhole and the focus point using ND Filter in the beam line.

High contrast interferograms were obtained even at 1/20 of the standard light intensity in EEI.

Page 12: EUV Wavefront Metrology System in EUVAeuvlsymposium.lbl.gov/pdf/2005/poster/1-ME-05... · EUVA EUVA EUV Metrology Laboratory Utsunomiya R&D Center (Canon)1 Sagamihara R&D Center (Nikon)2

122005 International Symposium on Extreme Ultraviolet Lithography, Nov.7-9, 2005

Supported by NEDOApplicability of PDI to a six mirror system

1.31nm

1.37 nm

1/20 intensity

0.041 nm1.32nm

2nd trial

0.043 nm1.35nm

1st trial

DifferenceStandard intensity

nm RMS(Z5-36)

Results

PDI at 1/20 of the standard light intensity in EEI was in well agreement with PDI at a standard light intensity.

PDI is applicable to the measurement of a six-mirror PO.

Page 13: EUV Wavefront Metrology System in EUVAeuvlsymposium.lbl.gov/pdf/2005/poster/1-ME-05... · EUVA EUVA EUV Metrology Laboratory Utsunomiya R&D Center (Canon)1 Sagamihara R&D Center (Nikon)2

132005 International Symposium on Extreme Ultraviolet Lithography, Nov.7-9, 2005

Supported by NEDOImprovement of CGLSI

Optimization of optical elements and alignment.

Optimization of the window size.

Pinhole

Cross Grating

4 Windows

Distance between the grating and the window was set to the design value precisely.

Difference between CGLSI and PDI was 0.28 nm RMS.(*1)To improve CGLSI we optimized the measurement

condition and the data analysis method.

Fringe pitch changes with respect to the distance between the grating and the window. We set the grating using this fact.

(*1)Ref. Hasegawa et. al, EIPBN 2, June 2005

Page 14: EUV Wavefront Metrology System in EUVAeuvlsymposium.lbl.gov/pdf/2005/poster/1-ME-05... · EUVA EUVA EUV Metrology Laboratory Utsunomiya R&D Center (Canon)1 Sagamihara R&D Center (Nikon)2

142005 International Symposium on Extreme Ultraviolet Lithography, Nov.7-9, 2005

Supported by NEDOImprovement of CGLSI

FFT

iFFT

(Y-direction)

(X-direction)

Optimization of the data analysis method

InterferogramFrequency map

iFFT

Differential wavefront

Differential Zernike polynomial

fitting

Retrievedwavefront

Elimination of flare effect

Half Pitch Shift method(*2)

CGLSI wavefront

Optimization of the spatial filter.

Distance between two focus points calculated from the experiment was used for evaluating CCD tilt.

(*2)Ref. Kato et. al, SPIE vol. 5751, 110-117 (2005)

Page 15: EUV Wavefront Metrology System in EUVAeuvlsymposium.lbl.gov/pdf/2005/poster/1-ME-05... · EUVA EUVA EUV Metrology Laboratory Utsunomiya R&D Center (Canon)1 Sagamihara R&D Center (Nikon)2

152005 International Symposium on Extreme Ultraviolet Lithography, Nov.7-9, 2005

Supported by NEDOImprovement of CGLSI

Wavefront Aberration nm RMS

CGLSI PDI1.24nm 1.26nm

0.17 nm

Comparison between PDI and CGLSI

-0.150

-0.100

-0.050

0.000

0.050

0.100

0.150

5 10 15 20 25 30 35

CGLSI

PDI

-0.015

-0.01

-0.005

0

0.005

0.01

0.015

0.02

0.025

5 10 15 20 25 30 35

RMS of difference

Difference between CGLSI and PDI is 0.17 nm RMS.This value is small enough to evaluate a six-mirror PO.

Zernike coefficients

Zernike coefficients

[λ]

[λ]

Page 16: EUV Wavefront Metrology System in EUVAeuvlsymposium.lbl.gov/pdf/2005/poster/1-ME-05... · EUVA EUVA EUV Metrology Laboratory Utsunomiya R&D Center (Canon)1 Sagamihara R&D Center (Nikon)2

162005 International Symposium on Extreme Ultraviolet Lithography, Nov.7-9, 2005

Supported by NEDOOutline of EWMS

Stages at the object plane

Stages at the image plane

Main structure of EWMS

Illumination systemSchematic view of EWMS

FeatureSix-mirror PO can be evaluated.Arbitrary points in the exposure field are measurable.Multiple interferometric methods can be operated in succession without breaking

the evacuated condition of the chamber.

Page 17: EUV Wavefront Metrology System in EUVAeuvlsymposium.lbl.gov/pdf/2005/poster/1-ME-05... · EUVA EUVA EUV Metrology Laboratory Utsunomiya R&D Center (Canon)1 Sagamihara R&D Center (Nikon)2

172005 International Symposium on Extreme Ultraviolet Lithography, Nov.7-9, 2005

Supported by NEDOOutline of EWMS

EWMS has been manufactured.EWMS will be transported to NewSUBARU in late November.

Surrogate PO and PO transport

Stages at the object plane

Stages at the image plane

Overall view of EWMS

Page 18: EUV Wavefront Metrology System in EUVAeuvlsymposium.lbl.gov/pdf/2005/poster/1-ME-05... · EUVA EUVA EUV Metrology Laboratory Utsunomiya R&D Center (Canon)1 Sagamihara R&D Center (Nikon)2

182005 International Symposium on Extreme Ultraviolet Lithography, Nov.7-9, 2005

Supported by NEDOSummary

Reproducibility of PDI was improved to 0.045 nm RMS.

PDI is applicable to the measurement of a six-mirror PO.

Difference between CGLSI and PDI was improved to 0.17 nm RMS.

The manufacturing of EWMS is going on as scheduled.

Page 19: EUV Wavefront Metrology System in EUVAeuvlsymposium.lbl.gov/pdf/2005/poster/1-ME-05... · EUVA EUVA EUV Metrology Laboratory Utsunomiya R&D Center (Canon)1 Sagamihara R&D Center (Nikon)2

192005 International Symposium on Extreme Ultraviolet Lithography, Nov.7-9, 2005

Supported by NEDOAcknowledgment

This work was performed under the management of

a research and development program of

NEDO/METI, Japan.

And the authors express their gratitude to

University of Hyogo

for the collaboration work with NewSUBARU.