flexible electronics technology & development...

Flexible Electronics Technology & Development Overview

侯維新

工研院電光所

From Imagination to Realization

By Courtesy of :陳麒麟陳麒麟

Contents

• Evolution (from history looking into the future)

• Global Development Overview

• Printed Organic TFT Technologies

• Flexible Electronics Development in Taiwan

• Flexible Electronics Development Roadmap

2010s ?

Evolution 有言無文

結繩

雕刻文字

西元前4000年刻木記事西元前1400年

鍾鼎文

書寫文字

西元前770年至前221年竹簡

公元105年蔡倫紙

印刷文字

印刷術發

明於7世紀西元1041~1048年

活字版印刷1924 第一個將黑白影像用電傳送出去

影像傳輸

SON

Y 2

1”19

90s

CRTLCD

CM

O 4

0”20

00s

PhilcoPedestal 1958

CRT

Flexible Display

History Statistics

Source: Prof. Raymond Oliver, Newcastle upon Tyne

技術名稱創意發現市場落實期程(年)

攝影(Photography) 1782 1838 56拉鍊(The Zip) 1883 1913 30

1940

1960

1956

1965

網際網路(Internet) 1962 1994 32

微電子(Microelectronics) 1960 1990 302015?

抗生素(Antibiotics) 1910 30心跳節律器(Pacemaker) 1928 32

即溶咖啡(Instant Coffee) 1934 22核能(Nuclear Energy) 1919 46

軟性電子(Flexible Electronics) 1990 25?

The Next Wave

ITRI initiated the IC and LCD display industries in TaiwanITRI is planning for the next industrial wave in Taiwan.

0

1000

1996 1998 2000 2002 2004 2006 2008 2010 2012

2000

3000

4000

5000

6000

7000

8000

9000

10000

11000

產值

(億元

)

IC Industry:2004total revenue :111B

NTD (3.6B USD)

LCD Industry:2004total revenue:76.1B NTD

(2.5B USD)

Flexible Electronics

Flexible Electronics Global Development

Development in Electronic Devices

‧陣列式血壓感測

2002 2004 2006

E-skin

Sheet scanner微型陣列式觸覺感測應用

•印製型RFID與尿濕整合•壓電式脈搏感測元件

Smart tag

Printed rectifier

2002 2004 2006

LCD Tec

hnology

LCD Tec

hnology

Organic

LED Tec

hnology

Organic

LED Tec

hnology

Development in Flexible Displays

Development in Flexible Solar Cells

2002 2004 2006

Nanostar 2002成立2004 3-5%

Georgia

Tech 2004 2.5~3%

Iowa Thin Film Tech2004 5-8%

Cannon

Portable Energy

Global Market Forecast

0

2

4

6

8

10

12

14

16

18

2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015

單

位

：

十

億

美

元

Logic/Memory

Display

OLED Light

Batteries

Sensors

Photovoltaics

Printed RFID

Other

2010年 2015年全球軟性電子市場 21.3億美元 160.0億美元全球“便利性全彩顯示器+全印式智慧型標籤”市場

5.7億美元(佔整體軟電26.6%)

38.6億美元(佔整體軟電24.1%)

全球軟性電子市場於2010年陸續邁入量產

International Symposiums

Place MonthFlexible Display & Microelectronics Conference Phoenix, Jan.

ISSCC San Francisco Feb.

VLSI-TSA Taiwan AprilMaterial Research Symposium San Francisco April

Printed Electronics Las Vegas Oct.

Material Research Symposium Boston Dec.Organic RFID San Diego Nov.Organic Microelectronics Toronto July

Printed Electronics Cambridge AprilPlastic electronics Frankfurt Oct.Organic Semiconductor Conference Cambridge Sept.SPIE OTFT session San Diego Aug.

International Investment Status

Period：2000~Budget：200M USD/yLeading：NIST(ATP)

Period ：2002~2006 (FP6)budget ：

SHIFT ~30MEuro/yPolyapply ~30MEuro/y

leading ：FlexDis & Others

Source: IEK/ITRI, 2005

Period：2002~budget：~3,00M USD/yleading：TRADIM

Period ：2002~2011budget：20M USD/yLeading： MOST (The Ministry of Science & Technology)

Korea Japan

EuropeUSA

Organic Electronics Association Members (65)

Applications

Flexible display for mobile phonePrinted 96 bit ,EPCDiagnostic labelSmart cardgen3

E-readerPrinted RFID 16-64 bit ROMClinical thermometerInformation labelgen2

Retail SignagePrinted RFID 1-8 bit ROMThirst reminderElectronic gamegen1

Organic for DisplaysRFID

Diagnostic SensorSmart Object

Roadmap Applications

Source: OEC-2006

Product and Market Roadmap

Source: OEC-2006

Organic Electronics Products

Printed System Sony

Acreo

Printed Electronics Technologies

TFT InterconnectionMemoryCapacitorDiode Coil

Output

Input

Integrated Structure by Printing/Coating

– Low Cost : Process, Material, Throughput and

Temperature,…

– Flexible: Substrate, Products and Time

Challenges:− Low mobility: ~ 1 cm2/Vs

− Non-uniform: Current, Vth…

− Not Stabile: Attack by O2 and H2O

− Reliability: Current, Vth and Clock Rate

Challenges of Printed Electronics

High humidity Low humidity

Merck,2006

PolyIC,2004

-8 -6 -4 -2 0 2 4 6 8 10

-5.0x10-7-4.5x10-7-4.0x10-7-3.5x10-7-3.0x10-7-2.5x10-7-2.0x10-7-1.5x10-7-1.0x10-7-5.0x10-8

I D

sat

VTsat

W/L=500um/100um


Gravure Flexo-graphy Screen Ink-jet Laser imprint Soft-contact

Resolution (um) 75 75 30 20~30 5

1

Low cost,Low Frequency


SubstrateGate

W

L

Source Drain

1 10 1001

101001k

10k100k

1M10M

100M1G

10G100G

Cut

-Off

Freq

uenc

y (H

z)

Gate Length (um)

u=0.001 u=0.01 u=0.1 u=1

fT=μVds/2πLg2

Vds=100V

High cost,High Frequency

Print High Performance Device With Low Cost Technology is NOT Easy

Operation of OFET

.

0

2, )(2

diel

ri

thGi

satD

tC

VVL

WCI

εε

μ

=

−=

Linear

Saturation

•Carrier mobility (µ)•Current on/off ratio (ON/OFF)•Threshold voltage (Vth)•Subthreshold swing (S)

T. Marks, Organic RFID, 2005 (Northwest U.)

Structure for OFET

Device Structure Pros/Cons

Top Gate •Slef-passivation•Fine S/D resolution•Poor Semi./Dielec Interface•Process on semiconductor

Bottom Gate /Bottom Contact

•Easy process•No process on semi.•Difficult for printing S/D•High contact resistance

Bottom Gate /Top Contact

•Low contact resistance•Process on semiconductor

Issues in OFET by Solution Process

Substrate:表面平整性成膜特性 Mobility阻水阻氧元件退化 ReliabilityGlass Temp. 基板退化產品扭曲，對位精準

Source & Drain:導電性電阻增加電路變慢印製精細度 Gate Length 元件特性…

Dielectric:Issue: Events: Effects:Solvent 攻擊半導體 Mobility製程溫度 Substrate function介面平整度 Scattering Mobility介電係數電場 VGS漏電流密度 Integrity On/Off, Reliability, VGS固化方法攻擊半導體 Mobility…

Semiconductor製程溫度半導體排列 MobilitySolvent 半導體排列 Mobility濃度排列、分散 Mobility厚度漏電流大小 On/Off 環境 Auto doping On/Off…

Criteria in Semiconductor

• Ohmic S/D: Proper Conductor-HOMO/LUMO energy alignment• High Mobility: Effective intermolecular interactions and Proper molecular orientation in film• Low Leakage: High purity (no doping)• Uniform film morphology• Good semiconductor-dielectric interface

T. Marks, Organic RFID, 2005 (Northwest U.)

Polymer Transistor (Worldwide Status)

(a) Xerox (b) Plastic Logic

(c) Merck (d) PolyIC

μ= 0.1 cm2/vs

μ= 0.6 cm2/vs

μ= 0.04 cm2/vs

μ= 0.01 cm2/vs

Jack Hou, EOL/ITRI

PQT12 F8T2

P3HT

Effect of Packing

Regioregularity (RR 96%; 81%)

H. Sirringhaus, Nature, 1999 (Cambridge U.)

Effect of Molecular Weight

McGehee et al. Macromolecules, 2005, 38, 3312; Nature Materials, 2006, 5, 222 (Stanford U.)

Microstructure

H.Yang et. al., Adv. Func. Mater., 15, p.671, 2005 (Stanford U.)

CH2Cl2 Toluene

CHCl3 THF

Effect of Interface

H.Sirringhaus et. al., Adv. Mat., 17, p.2411, 2005 (Cambridge U.)

Monolayer self-assembly

Hydrophilic surfaceHydrophobic surface

Surface Treatment

J. Veres, et. al.,Chem. Mater.,2004

Performance by Surface Treatment

Kobayashi, et.al., Nature Materials, 2004 (Tokyo U.)

Pre-Ordering

Kinder, et.al, Synth. Metal, 2004.

Self-Encapsulated Polymer Semiconductor

A.C. Arias, et.al.,Adv. Mater. 2006 (Xerox)

1. Better Stability than P3HT2. PQT:PMMA Has high Performance3. Current shows slightly change after 20 days.

Photo-Processable Pentacene Precursor

Mobility~0.02 cm2/V-sec; ON/OFF~105

A. Afzali,et.al., Adv.Mater., 2003 (IBM)

ZnO FET

B.Sun, et.al, Nano Lett., 2005 (Cambridge) V. Subramanian, IEDM, 2005 (UCB)

CNT FET

Facchetti, Marks, Rogers J. Am. Chem. Soc., 2005, 127, 13808 (Northwest U.)

N Type OFET

Lay-Lay Chua, et.al. Nature, 2005 (Cambridge U.)

Ambipolar TFT

E. J. Meijer, et.al. Nature Materials, 2003 (Philips)

Issues in OFET by Solution Process

Substrate:表面平整性成膜特性 Mobility阻水阻氧元件退化 ReliabilityGlass Temp. 基板退化產品扭曲，對位精準

Source & Drain:導電性電阻增加電路變慢印製精細度 Gate Length 元件特性…

Dielectric:Issue: Events: Effects:Solvent 攻擊半導體 Mobility製程溫度 Substrate function介面平整度 Scattering Mobility介電係數電場 VGS漏電流密度 Integrity On/Off, Reliability, VGS固化方法攻擊半導體 Mobility…

Semiconductor製程溫度半導體排列 MobilitySolvent 半導體排列 Mobility濃度排列、分散 Mobility厚度漏電流大小 On/Off 環境 Auto doping On/Off…

Flexible Electronics Development in Taiwan

Flexible Electronics Program at ITRI

Flexible Electronics Technology Division Established in September, 2005

Flexible Electronics Industry AllianceFlexible Electronics Industry Alliance

• 1st preparation meeting January 2005• FEIA established July, 2005

Flexible Electronics Industry Alliance (Flexible Electronics Industry Alliance (FEIAFEIA) ) -- 6060 membersmembers

Far Eastern Textile LTD.Wu Printed Circuit

CO.,LTDWintek Corp.SeveTek Inc.

Chi Mei Optoelectronics Corp.

Himax Technologies, Inc.EVERLIGHT CHEMICAL INDUSTRIAL Corp.ASE Group KaohsiungUMCNan Ya Plastics Corp.

BenQ Corp.NCKU/Department of Electrical Engineering &Computer science

Tunghai UniversityIntegrated Service Technology Inc.

SiPix Technology Inc.

Yuen Foong Paper MFG CO.,LTD.Wah Lee Industrial Corp.AU Optronics Corp.PVI CO.,LTD.SPIL CO.,LTD.

Kuo Sen Enterprise Co. Ltd.CSIST Materials & Electro-Optics Research Division

SmartDisplayer Technology CO.,LTD.

Unimicron Technology Corp.Tatung University

CA-LA Plate & Metal CO.,LTD.TAIFLEX Seientific CO.,LTD.

Witty Corp.Career Technology(MFG) CO.,LTD.

ETERNAL CHEMICAL CO.,LTD.

Educational BackgroundEducational BackgroundProfessional ExperienceProfessional Experience

Ph.D.(24%)

Master (61%)

Other (4%)Bachelor

(11%)

2006 Resources

Chemical &Material

42%

ElectronicsEng. 31%

Electro-Optics24%

Mechanics3%

Total Manpower : 54 people

Collaborations

Flexible Electronics Program

Electronics & Optoelectronics Labs

Materials & Chemical Labs

Display Technology Center

RFID Center

FEIA• System Integration• System verification• Standardization

• Dielectrics• Semiconductors• Memories• High κ materials• High μmaterials

• Printing infrastructures• Printed active components• LC film by continuous process• Advanced packaging• Circuit design & modeling

• OTFT backplane• Direct printed PR • Flexible AM displays Flexible Electronics

Industrial Alliance

http://feia.itri.org.tw

UniversitiesFundamental

researches

Flexible Electronics R&D Approaches

Flexible-E Program

Flexible Module Printed Electronics

Flexible Packaging

Interconnection

IC T

hinning

Printed Com

ponents

Printed Com

ponents

Analysis &

Modeling

Advance M

aterials

Continuous Processes

Flexible EO

Films

Substrate Smoother

Flexible Electronics Conceptual Target

VDD

GND GND

VDD

VDD

GND GND

VDD

VDD

GND GND

VDD

VDD

GND GND

VDD

VDD

GND GND

VDD

VDD

GND GND

VDD

VDD

GND GND

VDD

VDD

GND GND

VDD

Mem

ory

Demodulator

Divider

Ring Oscillator

Shift Registor

Shift Registor

Printed Electronics• Materials (conductor, dielectric, semiconductors, memory, …. )• Component structures (transistor, diode, rectifier, ….)• Processes (inkjet, gravure, imprint, screen printing, ….. )

Scan

Driv

er

Data Driver

Imaging, Sensor media

Battery

Protection Layer

ITRIEOL

RF

Product & Market Potential

Advanced Materials

Advanced Materials (1)

10−9 ~ 10−10 A/cm2 at -40 V.-50 -40 -30 -20 -10 0 10 20 30 40 50

1E-11

1E-10

1E-9

1E-8

1E-7Liner PVP+PMF(10:5)

6-arm PVP+PMF(11:4)

6-arm PVP+PMF(12:3)

6-arm PVP+PMF(10:5)

Cur

rent

Den

sity

(A/c

m2

)

Voltage (V)

Dielectrics3-armed

6-armed

Conductors

Post-thermaltreatment

DecomposeSmall

molecules removed

• Viscosity-controllable highly-conductive silver ink10nm Ag-NP

Silver ink• Nano-particles• polymer

R2 : sp2 hybrid pendant groupR1 : Solubilizing group-M1-M2- : Conjugated copolymer backbone(increased air-stability)

(1) Film formation(1) Film formation

(2) Post(2) Post--thermal treatmentthermal treatment

ThermallyThermally--inducedinducedall conjugated polymersall conjugated polymers

M1 M2

R1

n nM1 M2

R2


Semiconductors

p-type n-type

O O

O

O

O

OBrBr

BrBrS

O

O

SHO

O180°C +* *

• Polymer • Pentacene • CNT • Metal oxide


Au

NHO

S

NOH

S

NOHSN

HOS

N OH

S

NHO

S

NOH

S

Memories

on

off

High MW approach

Low MW approach

• Polymer • Nano-particles • Metal Oxide

PPRR

RR RR

AuPP PPPP

PP PP PPPP

PP：： PolymerPolymerRR：： Functional groupFunctional group

• High µ layer material

PI/PET/paperHigh µHigh µ

High DK Printed active circuit

Antenna coil

Primer coat

High µ FCCL MCL I500


N a n o N a n o h y b r idh y b r id

H ig h D k(B -s ta g e )

S u ita b le fo r P C B /F P C p r o c e s s in g

C o n t in u o u s D ie C o a t in g

M a te r ia l fo r m u la t io n

E le c tr ic a l m e a s u r in g & a p p lic a t io n s

F e rro e le c tr ic F e r ro e le c tr ic p o w d e rp o w d e r

F le x ib leF le x ib leP o ly m e rP o ly m e r b in d e rb in d e r H ig h D K

R C C

N a n o N a n o h y b r idh y b r id

H ig h D k(B -s ta g e )






F le x ib leF le x ib leP o ly m e rP o ly m e r b in d e rb in d e r

N a n o N a n o h y b r idh y b r idN a n o N a n o

h y b r idh y b r id

H ig h D k(B -s ta g e ) H ig h D k(B -s ta g e )






F le x ib leF le x ib leP o ly m e rP o ly m e r b in d e rb in d e rF e rro e le c tr ic F e r ro e le c tr ic

p o w d e rp o w d e r

F le x ib leF le x ib leP o ly m e rP o ly m e r b in d e rb in d e r H ig h D K

R C C

Nano dispersion

• High DK material


Substrates

PP PC PET

PP synthetic paper before primer coat coating

PP synthetic paper after primer coat

Primer coat on PP synthetic paperPrimer coat on PP synthetic paper•• Modifying surface energy of PP synthetic paperModifying surface energy of PP synthetic paper•• Smoothing the substrate surfaceSmoothing the substrate surface•• Increasing thermal ad chemical resistancesIncreasing thermal ad chemical resistances

Roll-to-roll primer coat

Devices & Systems

ITRI@2006•

++++++- - - - - - - - - - - - -- - - - -++++++- - - - - - - - - - - - -- - - - -

forcetop electrode pads

bottom electrode pads

PVDF sheet

PVDFsheet

mold

electroded

AkrC 0

0蚿蚿蚿= ε

d

AkrC 0

0= ε

cross-talk prevention

nano-roughness surface

Printed RF smart Tag

printed polymer film

electronic circuitry on FPC

antenna

(ex. Finger print sensor)

Tactile Sensor

Items Specs

Structure Array: 6×6 (Textures)

Texture Area: 10-50 mm(sq)

PVDF Thickness:

Development of Flexible Capacitive MicromachinedUltrasonic Transducers （fCMUT）

Ultrasound Wave

Top Electrode

Cavity

Bottom Electrode

Capacitor

Membrane

BodyAir coupled

Substrate

CMUTFlexible CMUT Concept

Flexible CMUT Prototype

Photo-detection at 3MHz

Flexible AV Cards

Next Generation Flexible AV Card– Stand Alone System (With Flexible Rechargeable Battery)– Flexible, Skin-like, Light Weight, Safety, Increase The Freedom Degree of Product Design– Flexible Display : Bistable Reflective Cholesteric LCD / TN LCD– Flexible Battery : Rechargeable, Capacity > 4.5 mAh/Cm2, Thickness 500um– Flexible Speaker : Electret Flim Speaker, Low Signal Voltage (< 100V ~ +/- 7.5V,w/o DC

Bias)

Reliability Modeling and Simulation

Device Process Device ModelingStress TestingRobust Circuit

Design

Simulation Platform

-10 -5 0 5 10 15

1E-14

1E-13

1E-12

1E-11

1E-10

1E-9

1E-8

1E-7

1E-6

1E-5Stress ConditionVG=15V, VD=0V

Dra

in C

urre

nt I D

S (A

)

Gate Voltage VGS (V)

Before Stress After Stress Curve Fitting by Protractor Curve Fitting by Protractor

10 100 1000

-3

-2

-1

0 -5V

-10V

-25V

-30V

W/L=50/8T=25o

Thre

shol

d Vo

ltage

Shi

ft (V

)

Stress Time (s)

Vstress=-35V

10 100 1000

-0.05

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

Thre

shol

d Vo

ltage

Shi

ft (V

)

Stress Time (s)

Vg=15/-15V, Vd=0V Vg=15/-15V, Vd=5V Vg=15/-15V, Vd=10V Vg=15/-15V, Vd=20V

f=60Hz, Duty Ratio=50%W/L=80/12T=25oC

Flexible LC Films by R2R Processes

Paper-Like Display Technologies

V

LiquavistaIridigm-Qualcomm Gyricon N’tera

ITRI Flexible EO Film Background

4.1” QVGA ColorCLCD

4.1” Flexible Color Filter

Non-substrate technology

3” TN test cell

4” Film like PDMLC

4” Microcelltechnology

4.1” QVGA B/W CLCD

2002 2003 2004 2005 2006

4” Film like TN LCD

4.1” QVGA G/B CLCDPhase separation technology

4.1” hybrid display

.

Advanced Flexible Display

PM Flexible Display

2008 2010

Flexible TFT LCD

MHA on plasticPS on plastic TR on plasticCell process for plastic (batch type)

Continue Cell process (R2R type)

I42

投影片 63

I42 ITRI, 2005/11/30

Cholesteric PM LCD on plastic

PM雙穩態單層彩色化

膽固醇液晶噴墨技術

保護層塗佈技術

Roll-to roll Process for B/W

CholestericDisplays

Inkjet PI, Color filter, Spacer

適合連續式封合與配相技術

LC Material & Property

LC Mode/Cell Design

Process on Plastic Substrate

Flexible Color Filter

高對比Plastic LCD技術

PM Flexible雙穩態技術

Film like LCD

ITRI Flexible EO Film ExperiencesI43

投影片 64

I43 ITRI, 2005/11/30

InnovationsPolarizerCompensator

Glass

Color Filter

SpacerLiquid Crystal

Polarizer

Alignment Layer

Alignment Layer

GlassPlastic

Plastic

• Easy Assembly• High Reflectance• Low Cost• Low Capital Investment

Innovation

Patent

Pendi

ngR2R Manufacturing Processes

Liquid Crystal

Sponge Particles

LC Paste

• No Spacer Needed• Improve Whiteness• Improve Viewing Angle• Induce Nano-domains

Novel LC Paste

Innovation For Multicolor ChLCD

Substrates manufactureFilling the Chiral material into the microcell and then drying

Coating ChLC into the microcell

Coating the sealing layer and adhesive

lamination

Micro-well Specifications:Sub-pixel size: 87×261μmWidth of wall: 15μmHeight of wall: 6μmMaterial: Negative-type photo-resist

Innovation for Polarizer Mode LC film

1: Faster response2. Lower driving voltage3. Higher reflectivity4. Bistability5. Non-alignment

Polarizer + compensator

PET/ITO

w/o Polarizer+Compensator w. Polarizer+Compensator

LC + Nano-particles

LC: Δε< 0

ITRIFlexible Electronics Lab

Features & Functions

Chemistry Lab

Process Development

Lab

Flexible Electronics

Lab

‧ The 1st flexible electronics Laboratory in Taiwan‧ Provide material evaluation & component/device testing services‧ Provide flexible electronics infrastructure to local industries‧ Provide flexible electronics product pilot run facility‧ Provide flexible electronics professional training

Electronics Lab

Flexible Electronics Lab (Roadmap)

2006

2007

2008

Facility construction (Jul. 2006)

Equipments for material/structure

evaluation (Sep. 2006)

Equipments for device/process development(Mar. 2007)

Equipments for device/process development(Sep. 2007)

Continuous manufacturing

equipments(Sep. 2008)

• FE material testing & development • Printable electronic component process development

• Printable FE module development• Continuous process development

• Continuous process pilot run• Provide product development platform for local industries

Stage I

Stage II

Stage IIIStage IV

Stage V

Advisories & Collaborations

n

n

n

nnnnn

nn n

nnn n

nn

n• n

n•n nn n

n •

n

•n

nn

nnnnnn

nn

台灣大學台北科大

長庚大學中原大學中央大學

清華大學交通大學

成功大學

UC Berkeley (California)

UCLA (California)

Standford (California)

Kent State Univ. (Ohio)

• EO film related company (Japan)

• Organic semiconductors

(UK)

Penn. State Univ. (Ohio)

• Tokyo Institute of Technology (JP)

• Organic Semiconductors

(Germany)

中興大學

Printing Meets Electronics Industry

Thank You

From Imagination to RealizationEvolution Global Market Forecast International Investment StatusChallenges of Printed ElectronicsChallenges of Printed ElectronicsChallenges of Printed Electronics Operation of OFETStructure for OFETIssues in OFET by Solution ProcessCriteria in SemiconductorPolymer Transistor (Worldwide Status)Effect of PackingEffect of Molecular WeightMicrostructureEffect of InterfacePerformance by Surface TreatmentPre-Ordering Self-Encapsulated Polymer SemiconductorPhoto-Processable Pentacene PrecursorZnO FETCNT FETN Type OFETAmbipolar TFTIssues in OFET by Solution ProcessInnovation For Multicolor ChLCD

flexible electronics technology & development...

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