iot seminar 2017 - rohde & schwarz€¦ · iot seminar 2017 nanyang polytechnic keck meng ng...
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IoT Seminar 2017Nanyang Polytechnic
Keck Meng NgApplication Engineer Rohde & Schwarz Regional Headquarter
The low-power design challenge
• Low power architecture• Low power components• Sleep power minimization• Active power optimization• …..
Low-power hardware design• Operating system• Communication protocol• Operational model• Maintenance model (upgrade)• ……
Low-power software design
Low-power wireless communication
LP-PANBluetooth, …
LP-LANWi-Fi Halo, …, ZigBee, Thread, …
LP-WANSigfox, LoRa, …LTE Cat M1/NB1…
Considering/modelling all relevant aspects impacting power consumption
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Two possible methods to save power: Select the best one and define the optimal parameter!
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Is the mobile reacting correctly to the configured timers?
How the power consumption looks like?
Which application bring the device from Idle or PSM to connected state?
How often it happens and which is the impact on the battery life?
How to emulate real user scenarios?
It becomes more complex to optimize the power consumption
Extended DRX(Idle Mode)
UE power classUE category Power saving
mode (PSM)Coverage
enhancement
Conditions
Data exchange architecture
Cat NB1
Cat M1
Cat 0
Cat 1
20 dBm
23 dBm
U-Plane
Non-IP
IP
5.12 s
10.24 s
43.69* min
6 min
12 min
310 h
Level 0
Level 1
Level 2
Design decision Negotiation w/ network
* eDRX timer for eMTC; for NB-IoT up to 175 min
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Need for precise power measurements and detailed views on all relevant aspects under reproducible network conditions
IoTapp.
MME
S-GW
SCEF
P-GW
MMECIoTBSDUTPMIC LTE
µP
GPIO1.8 V
3.3 V
2.8 V
• Communication behavior• Timer (eDRX, PSM)• Power modes
VI
• Feature support (PSM,…)• Coverage conditions• Communication modes
• Throughput• Delay, jitter• Loss
• Communication behavior• Device triggering• Maintenance actions
• Power monitoring over long period of time, ideally w/o specific power supply and on multiple channels• Very high dynamic range and high time resolution of I, V and P measurements• Possibility to correlate with signaling/network events
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Channel 2
PMIC GPIO
µP
LTE
1.8 V
3.3 V
2.8 V
MinMaxAvgRMS
XCurrent
Voltage
Power V
I Decim
inat
ionA/D
A/D
Channel 1
Device under test (DUT)R&S®CMW500 network emulator R&S®CMW500 network emulator
R&S®RT-ZVC power probe R&S®RT-ZVC power probe
to Ch.#2
R&S®CMWrunR&S®CMWrune.g. LTE-Cat1
Power consumption measurement solution from Rohde & Schwarz
IoTapp.
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USB
Up to 50 KSa/s regardless how many channels in use
ZVC04 Probe
Power Adapter
Voltage measurementswith 5 MSa/s each channel
Current measurements with 5 MSa/s each channel
V
I
Analog Frontent
(1..4 power meas. groups)
A/D18 bit
5 MSa/s
A/D18 bit
5 MSa/sA
rithmetic's
(min, m
ax, avg, RM
S)
Xinternalmultiplier
Digital Backend (4 in total)
V
P
I
Decim
ation
5MSa/s(each channel)
Up to 50 KSa/s for current and voltage
R&S RT-ZVCxx Multi-Channel Power ProbeHigh Speed Sampling
VoltmeterGain LSB Scale1/3 114 µV 15 V2/3 57 µV 7.5 V4/3 28 µV 3.75 V8/3 14 µV 1.88 V
AmperemeterShunt Gain = 10 Gain = 100
LSB Scale LSB Scale10K 381 pA* 45 µA 38 pA* 4.5 µA10R 381 nA 45 mA 38 nA 4.5 mA0R01 381 µA 10 A 38 µA 4.5 A
Ext. 3.81 µV 450 mV 381 nV 45 mV
l Digital control of range, amplification/attenuationl Input voltage range: ±15 V to GND (CM + differential), not floatingl Shunt – ampere meter up to 10 Al Variable gain and attenuation in the same signal path
* Lower limit is theoretical, sensitivity is limited by thermal and amplifier noise, see datasheet
Multi-channel power probe designed for large range measurements
R&S®RT-ZVC
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Burden Voltage
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l Circuit in the DUT PCB need to be opened such that the current can be flow into the instrument probe and back to the circuit again
l In ideal case, the instrument should appear like a short circuit (zero resistance) to the current flow
l In reality, the instrument’s internal fuse, switches and external testing cables and leads have finite resistance
l This lead to voltage drop across the instrument which is known as Burden Voltagel If not properly control, Burden Voltage can lead to additional voltage drop across the
DUT and in turn may affect DUT operational behavior and measurement instabilityl To mitigate the effect of Burden Voltage, a shunt resistor can be inserted across the
instrument probe
Burden Voltage
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Without burden voltage (figure a), the calculated current is:Iactual = 1.5 V / 5 ΩIactual = 0.3 A
With burden voltage (figure b), the current in this circuit equals:Imeasured = (1.5 V-0.5 V ) / (5 Ω)Imeasured = 0.2 A
In this case, the error caused by the burden voltage is 33%
Convenient use of the ampere meter:its internal shunt eliminates the need to modify the DUT
DUT
Ix
Probe channel #x
Im
Ix = Im
V15A
Shielded twisted pair cable
Exte
rnal
sou
rce
Build-in high precision shunt
Internal selectable shunts10 mΩ 1000 mW10 Ω 125 mW10 kΩ 250 mW
Internal selectable shunts10 mΩ 1000 mW10 Ω 125 mW10 kΩ 250 mW
Shunt included in the calibration procedure
Ready to go setup
Im
R&S®RT-ZVC
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High impedance voltmeter: current measurements with external shunt
DUT
Ix
Probe channel #x
Im
V15A
Shielded twisted pair cable
Exte
rnal
sou
rce
Ix >> ImIdeal for measurements at board level
No need to open the circuit
External shunt can be easily adapted acc. to the current to be measuredReady-to go setup
Im
External shunt
R&S®RT-ZVC
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Connecting current probe to Device Under Test
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The headers soldered to the DUT Printed Circuit Board, provide firm contact with the test point during the whole measurements.
The signal lead is plugged onto soldered-in headers on the DUT
Current Test Points Voltage Test Points
Connecting current probe to Device Under Test
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Current Test Points
Voltage Test Points
The PCB cables provide a flexible connection to the DUT. They are soldered onto the DUT and connected with the signal lead.
Connecting current probe to Device Under Test
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Shunt Resistor
To reduce burden voltage, use the external shunt for measurements of higher current drains. The figure shows the soldered-in connection of external shunt.
Current Test Points
Precise metal strip resistors are recommended, such as Vishay CSM series. The smallest shunt available in this series is 1 mΩ
R&S®RT-ZVC measurements with more than one channel
Channel 4
^ MinMaxAvgRMS
XCurrent
Voltage
Power V
I Deci
min
atio
nA/D
A/D
Channel 3Channel 2
Channel 1
Model RT-ZVC044 current and 4 voltage channels
Model RT-ZVC022 current and 2 voltage channels
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LTE Power Saving Mode (PSM) Optimization: Power vs. Delay
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R&S®CMW500 R&S®RT-ZVC
R&S®CMWrun
20
Test sequencertool
Test sequencertool
Power consumption monitor
Power consumption monitor
Voltage
Power
CurrentUL Power: 0 dBm
UL Power: 10 dBm
UL Power: 23 dBm
Event Marker
R&S®CMWrun: power consumption monitor with signaling events
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IP ThroughputMonitor
IP ThroughputMonitor
Power consumption monitor
Power consumption monitor
Downlink Uplink
TAU
Idle
PSM
I-DRX
RRC Connected
Open TCP FTP
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Detailed power analysis using power probe and scope
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LTE Burst
Current
600 MHz .. 6 GHz models
R&S®RT-ZVC
R&S®RTO/RTE
23
Application ExamplePower Consumption of a Bluetooth Low Energy Device
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Supply Voltage
Current shows peaks up to 12 mA
Current zoom window shows uA quiescentcurrents
Math channel showsinstantaneous power consumption
Area measurement shows how much energy this device activity consumed
Bluetooth Low Energy Device MeasurementLong-Term Measurement / Multi Domain Measurement
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Long-term measurement with zoom where BLE is active
Multi-domain measurement:BLE current consumption /
wireless transmission
R&S RT-ZVCxx Multi-Channel Power Probe
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Amperemeter
Voltmeter
LTE device
LAN for CMW remote control
USB based control
plug and play
R&S®CMW500 / radio comm. tester
RF
USB A/C Adapter
Demonstration