laboratório de implantação iônica instituto de …grande/arep2018.pdflaboratório de...

Laboratório de Implantação Iônica Instituto de Física – UFRGS

Ion Implantation Laboratory Institute of Physics – UFRGS

Biennial Report 2017/18


Ion Implantation LaboratoryInstitute of Physics – UFRGS

Biennial Report – 2017/18

Editors

Rogério Luís MaltezLeandro Langie Araujo

Pedro Luis Grande

Porto Alegre2018



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Table of ContentsPreface.......................................................................................................................................................................................6Staff...........................................................................................................................................................................................8

Permanent Researchers...............................................................................................................................................8Permanent Technicians...............................................................................................................................................9Temporary Technicians...............................................................................................................................................9Postdocs....................................................................................................................................................................10

Graduate students (Masters and PhD).....................................................................................................................................10Brazilian Collaborators...........................................................................................................................................................12

International collaborators......................................................................................................................................................13Facilities..................................................................................................................................................................................15

Users’ highlights......................................................................................................................................................................16Carla Eliete Iochims dos Santos...............................................................................................................................17Cláudio Radtke.........................................................................................................................................................19Cesar Aguzzoli..........................................................................................................................................................21Fabiano Bernardi......................................................................................................................................................23Fernanda Chiarello Stedile.......................................................................................................................................25Gabriel Vieira Soares................................................................................................................................................27Henri Boudinov........................................................................................................................................................29Johnny Ferraz Dias...................................................................................................................................................33Jonder Morais...........................................................................................................................................................35Pedro Luis Grande....................................................................................................................................................37Raul Carlos Fadanelli...............................................................................................................................................39Raquel Giulian..........................................................................................................................................................41Raquel Giulian..........................................................................................................................................................43Ricardo Meurer Papaléo...........................................................................................................................................45Rogerio Luis Maltez.................................................................................................................................................47Rogerio Luis Maltez.................................................................................................................................................49

Publications in peer reviewed journals...................................................................................................................................51

Conference Proceedings..........................................................................................................................................................59Oral contributions and invited talks........................................................................................................................................62

Supervision of thesis and dissertations (completed)...............................................................................................................68Organization of conferences...................................................................................................................................................71

Members in international committees and in editorial boards................................................................................................72Projects....................................................................................................................................................................................73

Funding programs and agencies..............................................................................................................................................74http://implantador.if.ufrgs.br...................................................................................................................................................75

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Laboratório de Implantação IônicaInstituto de Física – UFRGS


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Preface

The Ion Implantation Laboratory (IIL) is an ion beam center at the Institute of

Physics (IF) at the Federal University of Rio Grande do Sul (UFRGS), Brazil. The IF-

UFRGS is located in the city of Porto Alegre (state of Rio Grande do Sul) and it is

ranked as the most important research center of Physics in southern Brazil.

The IIL has three accelerators that provide a wide variety of positive ions in a

broad energy range and are used by tens of researchers from Brazil and other countries

from Latin America for ion-beam analysis, ion implantation and ion irradiation. Several

beam lines with different analytical techniques are available to scientists from different

fields. The techniques are:

PIXE (Particle-Induced X-ray Emission): provides elemental concentrations of

the order of part per million;

RBS (Rutherford Backscattering Spectrometry): used for characterization of

different structures, including multi-layered targets;

NRA (Nuclear Reaction Analysis) and NRP (Nuclear Reaction Profiling): ideal

to detect and profile specific isotopes respectively;

Microprobe: allow the use of techniques like PIXE, RBS and STIM with

micrometer beam size;

MEIS (Medium Energy Ion Scattering): it is a high-resolution RBS technique

with isotope-separation capability;

ERDA (Elastic Recoil Detection Analysis): for quantitative analysis of light

elements in solids, usually H and He;

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Ion Implantation: used for modification of materials under controlled

parameters.

The infrastructure of the laboratory includes a large variety of ovens, a clean

room, a MEV microscope and a photoluminescence laboratory. A fully dedicated

workshop allows the maintenance of the laboratory in a regular basis. A general view

of the laboratory is shown below, featuring the beam lines of the Tandetron accelerator.

This is the sixth issue of our activities and covers two years (2017-2018) of

scientific production of all staff members, postdocs and students of the IIL. In spite of

strong difficulties arising from severe restriction of budget and increase of academic

duties in our university we are all committed to go further.

Pedro L. Grande

Head of Ion Implantation Laboratory

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Staff

Permanent Researchers

Pedro Luís Grande, PhD. (IF, UFRGS, 1989) - Group leader since 2009.

Johnny Ferraz Dias, PhD. (UG, BELGIUM, 1994) – Accelerators coordinator since 2010.

Fernando Claudio Zawislak, PhD. (IF, UFRGS, 1967) - Founder and Group leader between 1980 and 2008.

Moni Behar, PhD. (UBA, ARGENTINA, 1970) – Accelerators coordinator between 1982 and 2009.

Israel Jacob Rabin Baumvol, PhD. (IF, UFRGS, 1977)

Livio Amaral, PhD. (IF, UFRGS, 1982)

Paulo Fernando Papaleo Fichtner, PhD. (IF, UFRGS, 1987)

Henri Ivanov Boudinov , PhD. (IE-BAN, BULGARIA, 1991)

Fernanda Chiarello Stedile, PhD. (IF, UFRGS, 1994)

Ricardo Meurer Papaléo, PhD. (U.UPPSALA, SWEDEN, 1996) PUC-RS

Rogério Luis Maltez, PhD. (IF, UFRGS, 1997)

Claudio Radtke, PhD. (IF, UFRGS, 2003)

Cristiano Krug, PhD. (IF, UFRGS, 2003)

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Daniel Lorscheitter Baptista, PhD. (IF, UFRGS, 2003)

Gabriel Viera Soares, PhD. (PGMicro, UFRGS, 2008)

Raul Carlos Fadanelli Filho, PhD. (IF, UFRGS, 2005)

Leandro Langie Araujo, PhD. (IF, UFRGS, 2004)

Agenor Hentz da Silva Jr., PhD. (IF, UFRGS, 2007)

Raquel Giulian, PhD. (RSPE, ANU, AUSTRALIA, 2009)

Jonder Morais, PhD. (IFGW, Unicamp, 1995)

José Henrique dos Santos, PhD (IF, UFRGS, 1997)

Permanent Technicians

Agostinho A. Bulla, Electrical Engineer responsible for the accelerators

Leandro Tedesco Rosseto, Electrical Engineer

Clodomiro F. Castello, Accelerator support and operation

Paulo R. Borba, Accelerator support and operation (In memoriam)

Paulo Kovalick, Workshop

Temporary Technicians

Marcelo Cavagnolli, IE-MULTI (Multi-users support)

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Eduardo Ribeiro dos Santos, IE-MULTI (Multi-users support)

Postdocs

Liana A. B. Niekraszewicz, Graduate Program in Materials Sciences at UFRGS. Fundng: CAPES. Supervisor: Johnny Ferraz Dias

Ana Paula Lamberti Bertol, Graduate Program in Physics at UFRGS.Funding: CNPq, Supervisor: Moni Behar

Igor Alencar, Graduate Program in Physics at UFRGS.Funding: CNPq/INES, Supervisor: Livio Amaral/Pedro Luis Grande

Raquel Thomaz, Graduate Program in Physics at UFRGS.Funding: CNPq, Supervisor: Pedro Luis Grande

Guilherme Koszeniewski Rolim, Graduate Program in Microelectronics at UFRGS. Funding: CAPES, Supervisor: Cláudio Radtke

Marcus Vinicius Castegnaro, Graduate Program in Physics at UFRGS.Funding: PNPD/CAPES, Supervisor: Jonder Morais

Graduate students (Masters and PhD)

Eduardo Garcia Ribas, PhD, Graduate Program in Physics at UFRGS.Funding: CNPq, Supervisor: Rogério Luís Maltez

Gabriel Volkweis Leite, PhD, Graduate Program in Physics at UFRGS.Funding: CNPq, Supervisor: Henri Boudinov

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Eliasibe Luis, PhD, Graduate Program in Microelectronics at UFRGS.Funding: Capes, Supervisor: Henri Boudinov

Ricardo Razera, PhD, Graduate Program in Microelectronics at UFRGS.Funding: Capes, Supervisor: Henri Boudinov

Lucas Martins, Masters, Graduate Program in Microelectronics at UFRGS.Funding: Capes, Supervisor: Henri Boudinov

Tatiéle Martins Ferrari, Masters, Graduate Program in Materials Sciences at UFRGS. Funding: CAPES, Supervisor: Johnny Ferraz Dias

Deiverti de Vila Bauer, Masters, Graduate Program in Materials Sciences at UFRGS. Funding: CAPES, Supervisor: Johnny Ferraz Dias

Henrique Trombini, PhD, Graduate Program in Physics at UFRGS.Funding: CNPq, Supervisor: Pedro Luis Grande

Felipe Selau, PhD, Graduate Program in Physics at UFRGS.Funding: CNPq, Supervisor: Pedro Luis Grande/Jonder Morais

Louise P. Etcheverry, PhD, Graduate Program in Microelectronics at UFRGS.Funding: CAPES, Supervisor: Cláudio Radtke

Gabriela Copetti, PhD, Graduate Program in Physics at UFRGS.Funding: CNPq, Supervisor: Cláudio Radtke

Gustavo H. Stedile Dartora, PhD, Graduate Program in Microelectronics at UFRGS. Funding: Capes, Supervisor: Fernanda Chiarello Stedile

Charles Airton Bolzan, Masters, Graduate Program in Physics at UFRGS.Funding: CNPq, Supervisor: Raquel Giulian

Leandro T. Rosseto, Masters, Graduate Program in Materials Science at UFRGS.Supervisor: Raquel Giulian

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Ester Riedner F. Gerling, Masters, Graduate Program in Microelectronics at UFRGS. Funding: Capes, Supervisor: Gabriel Vieira Soares

Taís Orestes Feijó, PhD, Graduate Program in Microelectronics at UFRGS.Funding: Capes, Supervisor: Gabriel Vieira Soares

Andreia Gorgeski, PhD, Graduate Program in Physics at UFRGS.Funding: CAPES, Supervisor: Jonder Morais and Fabiano Bernardi

Brazilian Collaborators

June Ferraz Dias, Instituto Oceanográfico, Universidade de São Paulo, SP.

Juliana da Silva, Laboratório de Genética Toxicológica, Universidade Luterana doBrasil, RS.

João Antônio Pêgas Henriques, Instituto de Biociências, Universidade Federal do RioGrande do Sul, RS.

Jairo José Zocche, Laboratório de Ecologia de Paisagem e de Vertebrados, Universi-dade do Extremo Sul Catarinense, SC.

Vanessa Moraes de Andrade, Laboratório de Biologia Celular e Molecular, Universi-dade do Extremo Sul Catarinense, SC.

Sandro Guedes de Oliveira, Departamento de Raios Cósmicos e Cronologia, Universi-dade de Campinas, SP.

Neusa Fernandes Moura, Escola de Química e Alimentos, FURG, RS.

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Gerado Gerson Bezerra de Souza, Instituto de Química, UFRJ.

Cecilia Veronica Nunez, Instituto Nacional de Pesquisas da Amazônia (INPA).

Antônio Marcos Helgueira de Andrade, Instituto de Física, UFRGS.

Fabiano Bernardi, Instituto de Física, UFRGS.

Rita M. Cunha de Almeida, Instituto de Física, UFRGS.

Gilberto L. Thomas, Instituto de Física, UFRGS.

Jairton Dupont, Instituto de Química, UFRGS.

Adriano Feil, Escola de Ciências, PUCRS.

Roberto Hübler, Escola de Ciências, PUCRS.

International collaborators

Stella Ramos-Canut, Institut Lumière Matière, Université Lyon 1, Lyon, France.

Bruno Canut, Institut des Nanotechnologies de Lyon, Université Lyon 1, Lyon, France.

Saul Larramendi Valdes, Departamento de Física Aplicada, Facultad de Física, Univer-sidad de la Habana.

Mário Simeón Pomares Alfonso, Instituto de Ciencia y Tecnología de Materiales, Uni-versidad de la Habana.

Limin Zhang, School of Nuclear Science and Technology, Lanzhou University,Lanzhou, P. R. China.

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Maarten Vos, Australian National University, Canberra, Australia.

Gregor Schiwietz, Helmholtz-Zentrum Berlin (HZB), Berlin, Germany.

DaeWon Moon, DGIST TechnoJungAngDaeRo 333, Dalsung, Daegu, Korea.

Daniel Primetzhofer, Department of Physics and Astronomy / Ion Physics Uppsala Uni-versity.

Katarina Vogel-Mikus, Department of Biology, Biotechnical Faculty, University ofLjubljana, Ljubljana, Slovenia.

João Marcelo J. Lopes, Paul-Drude-Institut für Festkörperelektronik (PDI), Berlin, Ger-many.

Leonard C. Feldman, Department of Physics and Astronomy, Rutgers - The State Uni-versity of New Jersey, Piscataway, NJ, U.S.A.

Melissa K. Santala, School of Mechanical, Industrial, and Manufacturing Engineering,Oregon State University, USA.

Bernt Johannessen, Australian National Science and Technology Organization(ANSTO), Australian Synchrotron, Australia.

Patrick Kluth, Department of Electronic Materials Engineering, Australian NationalUniversity, Australia.

Christina Trautmann, Department of Materials Research, GSI Helmholtzzentrum fürSchwerionenforschung, Germany.

Björn Winkler, Institute of Geosciences, Goethe-Universitat Frankfurt am Main, Ger-many.

Jean-Jacques Pireaux, Namur University, Namur, Belgium.

G. Hoff, Universita di Cagliari Dipartimento di Fisica, Monserrato, Italy.

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Facilities

The Ion Implantation Laboratory has three accelerators that provide a wide vari-ety of positive ions in a broad energy range, they are:

• 3 MV Tandetron accelerator;• 500 kV and 250 kV accelarators.

3 MV Tandetron 500 kV accelerator 250 kV accelerator

Besides the accelerators, the laboratory has the following additional facilities:

• Photoluminescence laboratory;• Clean-room;• Furnaces, ovens and reactor chambers;• Workshop.

Furnaces and reactors Optical characterization Clean-room

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Users’ highlights selected

among their published articles

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Elemental signature of Brazilian native fruits by PIXE

Carla Eliete Iochims dos Santos

The human health is related to a balanced diet, minimum exposure to contami-

nated environmental and a healthy lifestyle. These conditions include a broad range of

factors like toxic metals and organic compounds, vitamins and nutrient-deficiency dis-

orders. It is known that the human diet includes several organic and inorganic com-

pounds that increase the risk of development of obesity, cardiovascular disease and can-

cer. Healthy food intake may provide essential nutrients to guarantee the chemical bal-

ance during regular organism functions and to avoid related diseases. In this context,

Brazil is an important producer of fruit and vegetables, with different native species.

However, regional and exotic fruits are sometimes used without any previous knowl-

edge of inorganic and organic composition. In this way, we determined by PIXE tech-

nique the composition of a native fruit (Bunchosia glandulifera), popularly known as

falso guarana. This fruit is characterized by intense red pulp and seed and is used

mainly to produce energetic juice, and it may be found in gardens and farms around

Santo Antonio da Patrulha (RS, BR). Considering the use of it by local population, it

was necessary to quantify the nutrients and to determine the proximate composition

(pH, ash, soluble solids, total sugars, lipids, moisture, reducing sugars, proteins and

fiber) of the fruit, which was performed by PIXE and chemical methods, respectively.

Seed and pulp were analysed, since both of them are used as juice, jam and powder. Re-

sults showed K as the major element and in higher concentration in seeds than in pulp,

followed by Ca, P, S and Mg. Seed intakes (200 g) provides 86% of the RDI value for

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potassium. The content of proteins and total carbohydrates in seeds is also higher than

in pulp, suggesting the use of seed as a good source of nutrients. In addition, seeds pre-

sented twice energitc value (193 kcal/100 g) than pulp (107 kcal/100 g), making the

fruit a good source for energetic based diets. Besides that, unsatured fatty acids were

also quantified.The results showed the higher amount of linoleic acid (69.7 mg/100 g)

in seeds. This particular acid is not produced by the human organism, and its intake is

essential, since it acts with other fatty acids to decrease the total cholesterol and LDL

levels in plasma.

For the first time, according the authors’ knowledge, the proximate and

mineral composition of Bunchosia glandulifera was determined, contributing with sci-

entific data to check the potentialities of this exotic fruit as an important source of nu-

trients.

(A) Bunchosia glandulifera fruit. (B) Percentage of each quantified element in pulp of the falsoguarana. Potassium is the major element, while other elements (Al, Si, Cr, Ni, Mn, Fe, Cu, Zn and Rb)contribute with <1% of the total composition.

Paper reference:Proximate Composition, Nutrient Mineral and Fatty Acid of the Bunchosia glandulifera Fruit, D.E. Blank, S. Fraga, M. Bellaver, C.E.I dos Santos, J.F. Dias, L.A.M.A. da Costa, N.F. de Moura, Jo-Journal of Food and Nutrition Research, 5 (2017) 575-578.

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Reversibility of Graphene Photochlorination

Cláudio Radtke

Cl incorporation can be used to modify graphene properties not only in the dop-

ing scenario. Graphene functionalization by halogenation has recently received much

attention for opening paths to a great number of applications. The incorporation of

halogens such as Cl gives rise to significant modifications on the electronic band struc-

ture such as bandgap opening.

In order to infer about possible influences of the underlying substrate and pro-

cessing contaminants of the graphene sample, the chlorination of highly oriented py-

rolytic graphite (HOPG) was performed. This sample was prepared by cleavage of an

HOPG substrate immediately before the photochlorination process. Fig. 1 shows C 1s

and Cl 2s regions of the XPS spectrum of an HOPG sample just after chlorination. Pris-

tine HOPG has a peak at 284.3 eV corresponding to the binding energy of C atoms with

sp² hybridization. After chlorination, the C 1s region shows a large chemical displace-

ment with the C 1s peak appearing at 289.0 eV. Cl/C ratio of about 3 is obtained just

after photochlorination. The Cl areal density in this sample was obtained by RBS mea-

surements, resulting in a value of 9.4 × 1016 atoms/cm². Assuming a constant Cl/C ratio

of 3 and considering the areal density of C in a graphene layer (3.8 × 1015 atoms/cm2),

we can estimate the Cl concentration of 11.5×1015 Cl/cm2 in each graphene monolayer.

Considering these values, Cl adsorption takes place at least within 8 graphene layers

beneath the surface. Thus, Cl is not only incorporated at the surface but also in buried

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graphene layers, evidencing that Cl incorporation in monolayer graphene on SiO2 is not

only a result of Cl adsorption on SiO2 or on surface contaminants.

Cl does not change the hybridization of the basal carbon atoms, evidencing ionic

aspect of the C-Cl bonds. In order to accommodate the great amount of incorporated

Cl, graphene layer corrugation takes place. Graphene doping due to Cl is verified and

can be reversed through thermal annealing. However, due to its weak binding, Cl des-

orbs during air exposure and long periods of storage. After Cl desorption, graphene re-

turns to its original morphology. Some Cl atoms (Cl/C ~ 0.1), however, remain more

strongly bonded to graphene, most likely at grain edges and defects. Therefore, due to

the lack of stability of the Cl-C bonds, for maintaining a precise doping level, Cl trap-

ping methods are necessary.

Figure 1. C 1s and Cl 2s regions of XPS spectramof the HOPG samples. a.u. stands for arbitraryunits.

Paper reference:Reversibility of Graphene Photochlorination, G. Copetti, E.H. Nunes, G.K. Rolim, G.V. Soares, S.A. Correa, D.E. Weibel, and C. Radtke, Journal of Physical Chemistry C, 122 (2018) 16333-16338.

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Characterization of Au thin films with Ti-Al adhesion layer forapplications in biomedical sensors

Cesar Aguzzoli

Gold is often used for manufacture devices due to its high electrical conductivity

and optical resistivity. On the other hand, silicon has high capability of absorb oxygen

on its interface. When put together, as bilayer, the bond of gold into silicon substrate

can be poor requiring an adhesion layer. Typically, oxidative metals such as Cr and Ti

are used as intermediate layers to enhance the gold adhesion. In contrast, due their oxi-

dation and difusion in the gold surface, electrical, structural and morphological proper-

ties can be afected substantially. Herein, we present a characterization study of an alter-

native adhesion layer composed of an alloy of Ti-Al. Its performance is measured on

thin film of Au/Ti-Al/Si (or glass substrate) deposited by magnetron sputtering and an-

alyzed through a couple of measurements. A four point probe technique was used to ac-

quire the resistivity values (~3.5x10-8 Ω.cm) at room temperature, showing good con-

ductivity. The thin films thickness were estimated with Rutherford backscattering spec-

trometry (RBS) and the in-depth chemical composition with glow-discharge optical

emission spectroscopy (GD-OES). The set of results was compared with other known

adhesion layers in the literature as Ti, Cr, and also Al. The results confirm that Ti-Al in-

terface comes up as a good alternative as adhesion layer for applications in electronics,

specially in biomedical sensors, due to its excellent conductivity, low oxidation and,

hence, good durability.

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Paper reference:Characterization of Au thin films with Ti-Al adhesion layer for applications in biomedical sen-sors, C.D. Nascimento, E.G. Souza, and C. Aguzzoli, Thin Solid Films, submitted 2018.

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Pt/CeO2 nanoparticles applied to the CO2 dissociation reaction

Fabiano Bernardi

The CO2 level in the atmosphere reached the value of 400 ppm in 2014, which is

higher than the security limit of 350 ppm. The increasing emission of the CO2 molecule

in the atmosphere enhances the negative consequences of the greenhouse effect. It at-

tracts scientist’s attention to study the CO2 dissociation reactions, like the Reverse Wa-

ter Gas-Shift (RWGS) reaction. However, the catalysts currently used present low cat-

alytic activity, making the development of high performance catalysts very important

nowadays. CeO2-based catalyst have been used to this reaction in the last past years. In

this case, the CO2 molecule interacts with the O vacancies at the CeO2 support during

the RWGS reaction. It was shown there is an optimal O vacancy population at the CeO2

support for a given catalytic reaction. In this work, CeO2 nanoparticles were synthe-

sized in previous works aiming to control the O vacancy population. After, Pt nanopar-

ticles were supported on the CeO2 synthesized with 8 wt%. The atomic percentual was

confirmed by Rutherford Backscaterring Spectrometry (RBS) measurements using a He

beam of 2 MeV incident energy. The RBS spectra are shown in Figure 1. The presence

of Cl, N and O comes from the synthesis procedure. In-situ time resolved X-Ray Ab-

sorption Near Edge Spectroscopy (XANES) measurements were performed at the Ce L3

edge in the transmission mode at the DXAS beamline of Brazilian Syncrhotron Light

Laboratory (LNLS). The samples were heated to 400 oC in H2 atmosphere for catalyst

activation. After, the RWGS reaction started inserting a CO2 + H2 atmnosphere. The re-

action products were monitored by time resolved Mass Spectrometry measurements.

Then, the reactivity towards the RWGS reaction was correlated to the Ce oxidation

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state during the reaction (Ce(III) fraction), which is directly related to the O vacancy

population.

RBS measurements of Pt/CeO2 nanoparticles using a He+ beam of 2 MeV energy.

Paper reference:

To be submitted 2019.

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Unraveling the mechanisms responsible for the interfacial re-gion formation in 4H-SiC dry thermal oxidation

Fernanda Chiarello Stedile

Silicon carbide (SiC) is a wide bandgab semiconductor with promising applica-

tion in power electronics. However, the poor quality of the SiC/SiO2 interfacial region

is the main cause for the low channel mobility observed in SiC field effect devices. In

order to allow a higher channel mobility to be achieved, a better understanding of the

mechanisms taking place when the interfacial region is being formed is crucial.

4H-SiC dry thermal oxidation on both polar faces (Si- and C-faces) was investi-

gated using nuclear reaction analyses (NRA and NRP) to quantify and profile the

amount of 18O incorporated during thermal oxidation using dry oxygen enriched 97%

in the 18 isotope as the oxidant species. With this setup, it is possible to differentiate

between oxygen incorporated during the thermal treatment and other oxidation sources,

such as air exposure. Assuming a given film density, it is possible to correlate the

amout of 18O measured with SiO2 film thickness. In order to elucidate the different

processes taking place during the oxidation and parameters’ influence in each of them,

oxide films were grown using different combinations of temperature, pressure and du-

ration. Data related to oxygen incorporation and its correlation with oxide thickness are

presented in the Figure below, where it can be seen that oxide growth is linear in this

thickness interval for all parameters used. This evidences that the limiting step is not

the diffusion of the oxidant species. Oxide growth rates were extracted from the slope

of each data fitting and were analyzed with the Arrhenius equation.

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Arrhenius analysis of the data related to the C-face samples suggests that there is

a change in the oxidation mechanism (different activation energies) when the oxide

film is around 10 nm thick, irrespective to the oxygen pressure used in the thermal

treatment. Activation energies found in the present work concerning C-face oxide films

are related to atom emission processes occurring in the interfacial region. Oxide films

in the Si-face presented a very rapid initial growth and its Arrhenius plots indicate that

the activation energy is increasing with temperature and oxide thickness, which can be

related to the ‘active oxidation mode’. Data also suggest that a process other than ther-

mal activation must be ruling oxide growth, wich can be interfacial atom emission due

to strain.

Time dependence of 18O incorporation for oxidations performed under different pressure, tempera-

ture, and durations. Points represent experimental data and lines represent linear fittings. Film thick-nesses were determined assuming an uniform film density equal to 2.21g/cm³. Bars represent an ex-perimental inaccuracy of 10%

Paper reference:Investigation of phosphorous in thin films using the31P(α,p)34S nuclear reaction, E. Pitthan,, A.L. Gobbi, and F.C. Stedile, Nuclear Instruments and Methods in Physics Research Section B: Beam In-teractions with Materials and Atoms, 371 (2016) 220-223.

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Growth of van der Walls heterostructures for nanoelectronics applications

Gabriel Vieira Soares

Two-dimensional (2D) lamellar materials are crystalline atomic monolayers

which have different properties from their three-dimensional analogues. Beyond

graphene, the transition metal dichalcogenides (TMDs) stand out within the 2D materi-

als category, from which the molybdenum difulfide (MoS2) presents superior electrical

properties like: direct bandgap (~ 1.8 eV), and high carrier mobility for applications in

nanoelectronic devices. Stacking different 2D crystals on top of each leaded to a new

and exciting research area: van der Waals (vdW) heterostructures. Since these materials

generally have a strong in-plane covalent bonding, they should remain stable, while van

der Waals forces are sufficient to keep these materials stacked. Using different combi-

nations of 2D materials, it is possible to obtain outstanding new physical phenomena.

The use of these 2D materials in vdW heterostructures not only offers unique proper-

ties, but also extends the conventional applications of electronics to other areas, such as

flexible and transparent electronics. Considering the excellent optical and mechanical

properties of MoS2 (semiconductor), h-BN (dielectric) and graphene (conductor), these

materials can be stacked as a MIS (metal-insulator-semiconductor) structure, which is

the core of the MISFET devices. In this way, it is mandatory to understand and charac-

terize the mechanisms of each 2D monolayer growth on top of each other and the ef-

fects of further processing on its physico-chemical properties.

Figure 1 (left-hand side) shows the Raman spectra of monolayer MoS2 grown on

monolayer CVD graphene on silicon oxide. It is possible to observe a increase in the

TMD structural quality when the growth temperature is increased. In the inset, the Ra-

man bands related to graphene are shown, where minor modifications on the graphene

structure are observed. Figure 1 (rigth-hand side) shows Near-edge X-ray absorbtion

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fine structure (NEXAFS) spectra of the carbon energy region after TMD growth at

diferent temperatures. Once again only minor modification in the graphene structure are

observed, confirming that the growth processes leads to minimal modification in

graphene layer. Further investigations will incorporate the growth of h-BN on this vdW

heterostructure.

Figure 1: Left-hand side: Raman spectroscopy of MoS2 grown by chemical vapor deposition (CVD)on a graphene layer at different temperatures (500, 550, 600 and 650ºC) showing the E2g and A1gbands. Inset: Raman spectroscopy of the graphene wave number region showing the G, 2D and Dbands. Rigth-hand side: NEXAFS measurements at 90 and 26 °angles show π* and σ* transitions forthe carbon K-edge of prisitiane graphene (blue line), and after MoS2 growth at 500 (red) and 650ºC(black).

Paper reference:Rau anterior, N.M. Bom, G.V.Soares, M.H.O. Junior, J.M.J. Lopes, H. Riechert, C. Radtke. TheJournal of Physical Chemistry C, 120 (2016) 201-206.

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Energy resolution of a SiC Schottky diode as RBS alpha particles detectory

Henri Boudinov

SiC Schottky detector was fabricated on 350 µm 4H-SiC (nitrogen doped with

ND = 1 10‧ 18 cm-3) commercial wafers, 8° off-axis on the Si face with a 6 μm thick epi-

taxial layer doped with nitrogen (ND = 1 10‧ 15 cm−3). The ohmic contact was prepared by

Ni sputtering onto SiC backside (C-terminated surface) with a thickness of 100 nm and

was thermally annealed in argon at 950°C for 5 min. Hafnium dioxide (HfO2) with

thickness of 1 nm was deposited by Atomic Layer deposition (ALD) on the front side

of the detector sample (Si-terminated surface). After the dielectric deposition, the Ni

Schottky contact was deposited by sputtering through a mechanical mask, forming a

circular electrode with diameter of 5.4 mm and thickness of 10 nm. A second thermal

annealing was performed in argon at 400°C for 5 min for Schottky barrier improve-

ment. The structure was encapsulated and coupled to the electronics by a microdot con-

nector. The detector presented a Schottky Barrier Height of 0.91 V, ideality factor of

1.15 and reverse current density of 62 nA/cm2 at 40 V reverse bias. RBS data for differ-

ent ion beam energies were collected from an Au/Si sample.

In order to study the energy resolution as a function of the depletion layer thickness,

the RBS spectra were acquired varying the reverse bias applied to the detector. Fig.

1(left) shows the RBS spectra in the Au region for the alpha particles energy of 1 MeV

(corrected by the gold kinematic factor at 165°). When the reverse bias is lower than

the projection range, the spectra are dislocated to lower energy channels and have lower

amplitudes. Fig. 1(right) shows the SiC detector resolution as a function of the reverse

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bias applied, obtained from the curves of Fig.1(left). When the reverse bias increases,

the electric field inside the detector also increases, decreasing the probability of charge

recombination in the depletion region. Consequently, the charge loss is minimized and

the spectra tend to be more defined, providing better energy resolutions. Yet, for higher

reverse biases, the series capacitance is also lowered, contributing to decrease of the de-

tector energy resolution.

The energy resolution is expected to be worse for the SiC detector compared to the Si

one, because the energy required to produce an electron-hole pair in SiC is over two

times higher than for Si (8.4 eV and 3.8 eV, respectively). Although the energy resolu-

tion estimated for the fabricated SiC detector is poorer than the common Si RBS detec-

tors, it can be used for sample analysis in radiation harsh environments or high temper-

atures.

Paper reference:Characterization of a SiC MIS Schottky diode as RBS particle detector, I.R. Kaufmann, A. Pick,M.B. Pereira, H. Boudinov Journal of Instrumentation,,13 (2018) P02017-0-P02017-13.

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Monazite as a candidate form for the immobilization of nuclear waste

Igor Alencar

The stabilization and immobilization of nuclear high-level waste produced from

the fuel cycle of reactors and dismantled weapons is a challenging, pressing topic of

materials science. In the context of deep geological repositories, an ideal waste form

must be able to withstand the cumulative damage of ionizing radiation generated by the

spontaneous decay and the environmental conditions, i.e. it must possess radiation re-

sistance and chemical durability. Several candidate forms had been proposed in the

past, and mineral analogues can shed light in predicting the behavior of different mate-

rials. In this sense, due to its high structural flexibility including high incorporation of

uranium and thorium oxides and its low dissolution rate during weathering processes,

monazite-type ceramics, LnPO4 where Ln denotes elements from La to Gd, have been

proposed as a nuclear waste form for the immobilization of minor actinides. In this

work, the monazite (La,Pr)PO4 solid solution was synthesized by solid-state reactions

and extensively characterized in order to study the structural, vibrational and thermo-

chemical properties of the solution. Such characterization included electron microprobe

and gravimetric analyses, differential scanning and high-temperature oxide melt solu-

tion calorimetries, powder X-ray diffraction, infrared and Raman spectroscopies. The

results showed that deviations from an ideal solution are rather small: there is an excess

volume and interpretation of calorimetric data may indicate a slightly asymmetric mix-

ture. Refinements of Ln-O bond lengths allowed to conclusively ascribe the blueshift

observed for phosphate modes in Raman spectra to the lanthanide contraction. Compre-

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heensive characterization of solid solution is a crutial first step in order to validate

monazite as a potential candidate for the immobilization of nuclear waste. Obviously,

the next step is to investigate the radiation effects. Ion accelerators are excellent proxies

for mimicking radiation conditions at the repository. In this way, ion-irradiation experi-

ments are briefly described.

Powder X-ray diffraction results for the solid solution: (Left) Unit-cell volume and the excess volume

as an inset; and (Right) Averaged Ln-O bond length and P-O bond length as an inset.

Paper reference:

Structural, vibrational and thermochemical properties of monazite-type solid solution La1-

xPrxPO4, A. Hirsch, P. Kleger, I. Alencar, J. Ruiz-Fuertes, A. Shelyug, L. Peters, C. Schreinemachers,

A. Neumann, S. Neumeier, H.-P. Liermann, A. Navrotsky, G. Roth, Journal of Solid State Chemistry,

245 (2017) 82-88.

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X-rays induced during heavy ion bombardment

Johnny Ferraz Dias

In this work we present some results concerning the X-rays emitted by heavy

ions during target bombardment. In this case, Cl4+ and Cl5+ ions with energies from 4

MeV to 10 MeV were irradiated over vitreous carbon planchets. Moreover, total X-ray

production cross sections of Ti, Cr, Ni and Zn X-rays induced by chlorine ions were ob-

tained as well for the same energy range. Only inner shell transitions were considered

in the present work. The targets consisted of thin films deposited over vitreous carbon

planchets.

The results indicate that the projectile X-ray yields increase as a function of the bom-

barding energy for the present energy range. Effects due to projectile charge state ap-

pears to be of minor importance at these low ion velocities. It is shown that a simple

exponential function can represent the continuum background of such complex spectra.

The chlorine transition rates K-/K-α obtained from chlorine acting as a projectile inter-

acting with a carbon target are about half the value when compared to the chlorine K-/K-

α ratios obtained when a LiCl target is bombarded with C+ and C3+ ions with energies

from 2 MeV to 6 MeV.

As far as the total X-ray production cross sections induced by chlorine ions are

concerned, perturbation theories like ECPSSR theory underestimates the experimental

results for all targets. The disagreement varies from several orders of magnitude for in-

ner shell transitions of Ti (Figure 1) to a factor 5 for inner shell transitions of Zn. Al-

though Ab Initio calculations improve the agreement between experiment and theory, it

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still fails to describe the experimental results at such low bombarding energies. The

role of electron capture and possible mechanisms responsible for these effects are dis-

cussed.

Figure 1: Total X-ray K shell production cross section as a function of the chlorine bombarding en-ergy. The present data (dark circles) are compared with results from Tanis (upside triangles), Helsinkgroup (diamonds) and Madrid group (upside down triangles) in the framework of the ECPSSR,PWBA and Coupled Channels calculations.

Paper reference:Considerations about projectile and target X-rays induced during heavy ion bombardment, F.F.Fernades, D.V. Bauer, A. Duarte, T.M. Ferrari, L.A.B. Niekraszewickz, L. Amaral, J.F. Dias, NuclearInstruments and Methods in Physics Research B, 417 (2018) 19

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Probing the Inner Structure of PtPd Nanoparticles by MEIS

Jonder Morais

Despite of all efforts to explore the structural properties of bimetallic nanoparti-

cles, there is still a constraint of proper tools to successfully probe their composition

and atomic arrangement. In this work, bimetallic PtPd nanoparticles with approxi-

mately 5 nm mean diameter were synthesized to achieve distinct atomic distributions:

nanoalloys or core@shell. The samples were probed by Medium Energy Ion Scattering

(MEIS) and space-resolved elemental analysis via energy dispersive X-ray (EDX)

spectroscopy in STEM (Scanning Transmission Electron Microscope) mode. The com-

plementary association of STEM-EDX profiling with MEIS, which simultaneously sur-

veys millions of nanoparticles, becomes a powerful tool for a statistically representative

structural analysis. As result, the measurements provided key details such as core size,

shell thickness and composition, and even distinguished core@shell from core@alloy

structures. PtPd nanoalloys and Pd-core structures were successfully obtained while the

attempt to produce Pt-core NPs actually resulted in a mixture of nanoalloy and

core@alloy structures (core = Pt or Pd). Moreover, MEIS sensitivity to the NPs’ shell

enable to quantify its most plausible alloy composition.

The authors would like to thank the Brazilian funding agencies CNPq, CAPES,

PRONEX/FAPERGS and INCT/INES for their financial support. The important help

from Gabriel Marmitt, Henrique Trombini and Maurício Sortica.

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Top - Selected NP structures models used in this work: (a) Pt-Pd alloy, (b) Pt@Pd, (c) Pd@Pt, (d)Pt@Pt-Pd, and (e) Pd@Pt-Pd structures. Botton - MEIS simulations at 128° backscattering angle forsamples (a) PtPd1, (b) PtPd2, and (c) PtPd3 considering some atomic arrangements.

Paper reference:Unveiling the Inner Structure of PtPd Nanoparticles, V. Z. Paes, M. V. Castegnaro, D. L. baptista,P. L. Grande and J. Morais, The Journal of Physical Chemistry C, 121 (2017) 19461-1946.

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Ground- and excited-state scattering potentials for the stoppingof protons in an electron gas

Pedro Luis Grande

The self-consistent electron–ion potential V(r) is calculated for H+ ions in an

electron gas system as a function of the projectile energy to model the electronic stop-

ping power for conduction-band electrons. The results show different self-consistent

potentials at low projectile-energies, related to different degrees of excitation of the

electron cloud surrounding the intruder ion. This behavior can explain the abrupt

change of velocity dependent screening-length of the potential found by the use of the

extended Friedel sum rule and the possible breakdown of the standard free electron gas

model for the electronic stopping at low projectile energies. A dynamical interpolation

of V(r) is proposed and used to calculate the stopping power for H+ interacting with the

valence electrons of Al. The results are in good agreement with the TDDFT benchmark

calculations as well as with experimental data.

In this work, we investigated the electronic stopping power for H+ projectiles in

the valence electrons of solids, with a focus on Al. The self-consistent potential for the

scattering of valence-electrons at the projectile was analyzed and compared to extended

FSR calculations. We have shown that the spherical average of this potential is a func-

tion that is very close to a Yukawa potential for v > vF. This agrees with predictions

based on perturbation theory. The same holds true for v < vF but other self-consistent

solutions appear as well. These extra solutions correspond to excited potentials and can

also be obtained by the extended FSR after relaxing the condition imposed by the use

of the Levinson theorem. The transition from v < vF to v > vF becomes smooth as long

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as excited potentials are used. However, at very low energies the ground-state potential

should describe the interaction correctly. Thus, a dynamical interpolation has been pro-

posed yielding a good agreement with TDDFT benchmark calculations as well as with

experimental data after adding the contribution of the inner-shells from the CasP pro-

gram.

Self-consistent effective V(r) for 100 keV H+ ions in a FEG system with rs = 2.07 corresponding to Al

valence-electron density of 1.81x1023 cm−3. The square symbols correspond to the present calcula-

tions. On the right, two solutions for each projectile energy are shown.

Paper reference:Ground- and excited-state scattering potentials for the stopping of protons in an electron gas, F.Matias, R. C. Fadanelli, P. L. Grande, N. E. Koval, R. Díez Muiño, A. G. Borisov, N. R. Arista and G.Schiwietz, J. Phys. B: At. Mol. Opt. Phys., 50 (2017) 185201:1-8.

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Microstructural response of InGaN to swift heavy ion irradiation

Raul Carlos Fadanelli

A monocrystalline In0.18Ga0.82N film of ~275 nm in thickness grown on a

GaN/Al2O3 substrate was irradiated with 290 MeV 238U32+ ions to a fluence of 1.2 x 1012

cm-2 at room temperature. The irradiated sample was characterized using helium ion

microscopy (HIM), Rutherford backscattering spectrometry under ion-channeling con-

ditions (RBS/C), and high-resolution X-ray diffraction (HRXRD). The irradiation leads

to formation of ion tracks throughout the thin In0.18Ga0.82N film and the 3.0 mm thick

GaN buffer layer. The mean diameter of the tracks in In0.18Ga0.82N is ~9 nm, as deter-

mined by HIM examination.

Combination of the HIM and RBS/C data suggests that the In0.18Ga0.82N material

in the track is likely to be highly disordered or fully amorphized. The irradiation in-

duced lattice relaxation in In0.18Ga0.82N and a distribution of d-spacing of the (0 0 0 2)

planes in GaN with lattice expansion are observed by HRXRD. Further theoretical sim-

ulations based on the thermal spike model are needed to clarify the influence of mate-

rial properties, such as band gap width and melting temperature, on the formation of

ion tracks in the nitride semiconductors.

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RBS/C spectra for In0.18Ga0.82N /GaN/Al2O3 before and after 290 MeV U ion irradiation to a fluence

of 1.2 x 1012 cm-2 at room temperature. The line curves are the fitting results of In, Ga and their

combined contributions to the random spectrum using the SIMNRA code.

Paper reference:L.M. Zhang, W. Jiang, R.C. Fadanelli, W.S. Ai, J.X. Peng, T.S. Wang, C.H. Zhang, Nuclear Instru-ments and Methods in Physics Research B, 388 (2016) 30.

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Structural and electronic characterization of antimonide filmsmade by magnetron sputtering

Raquel Giulian

AlSb, GaSb and InSb films were deposited by magnetron sputtering on Si and

SiO2/Si substrates and their electronic and structural properties were investigated as a

function of film thickness and deposition temperature. Elemental composition and

thickness were investigated by Rutherford backscattering spectrometry and particle

induced X-ray emission analysis, while X-ray diffraction provided information about

phase and structure. Surface chemical composition was investigated by X-ray

photoelectron spectroscopy. Here we demonstrate that polycrystalline AlSb films can

be produced by magnetron sputtering, where films deposited at 550 °C attain a

zincblende phase and exhibit the smallest amount of oxygen (compared to other

deposition temperatures). GaSb grown by this technique at room temperature holds an

amorphous structure, with excess Sb, but for films deposited at 400 °C the structure is

polycrystalline, stoichiometric with a zincblende phase. InSb films with the thickness

of 75 nm and thinner, deposited at room temperature, are amorphous, and for increasing

thickness the films attain a zincblende phase with polycrystalline structure. Sputtering

performed at elevated temperatures yields films with improved crystalline quality.

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(left) Grazing incidence x-ray diffraction from GaSb films deposited by magnetron sputtering at tem-

peratures indicated on the graph. Films deposited at room temperature are amorphous with excess

Sb. Films deposited at 400 C are polycrystalline with zinc-blende phase. (right) Grazing incidence x-

ray diffraction analysis of InSb films deposited at room temperature, with various thicknesses. Films

with up to 75 nm thickness are amorphous. With increasing thickness the films attain a zinc-blende

phase, with crystallites preferably oriented in the 220 direction.

Paper reference:Structural and electronic characterization of antimonide films made by magnetron sputtering,R. Giulian, D.J. Manzo, J.B. Salazar, W. Just, A.M.H. de Andrade, J.R. Schoffen, L.A.B.Niekraszewicz, J.F. Dias and F. Bernardi, Journal of Physics D: Applied Physics, 50 (2017) 075106-8pages.

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Ion irradiation-induced polycrystalline InSb foam

Raquel Giulian

InSb films with various thicknesses were deposited by magnetron sputtering on

SiO2/Si substrates and subsequently irradiated with 17 MeV Au+7 ions. The structural

and electronic changes induced by ion irradiation were investigated by synchrotron and

laboratory based techniques. Ion irradiation of InSb transforms compact films

(amorphous and polycrystalline) in open cell solid foams. The initial stages of porosity

were investigated by transmission electron microscopy analysis and reveal the porous

structure initiates as small spherical voids with approximately 3 nm in diameter. The

evolution of porosity was investigated by scanning electron microscopy images, which

show that film thickness increases up to 16 times with increasing irradiation fluence.

Here we show that amorphous InSb films become polycrystalline foams upon

irradiation with 17 MeV Au+7 ions at fluences above 1014 cm-2. The films attain a

zincblende phase, with crystallites randomly oriented, similarly to the polycrystalline

structure.

Our empirical observation suggests that void formation is indeed the first step for

the formation of the porous structures. The evolution into large pores must require more

complex atomic mechanisms which may combine, for example, surface diffusion,

sputtering and strain relaxation effects which requires deeper investigations. But still

we believe that the results we show in the present article exposing the microstructure

evolution phenomenon provide valuable information and should stimulate more

systematic investigations. attained by thermal annealing of unirradiated films.

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(top) (a) Cross-sectional view of InSb film irradiated with 2×1014 cm−2; (b) swelling as a function of

irradiation fluence; (c) as deposited film. (bottom) Grazing incidence x-ray diffraction analysis of

InSb films deposited at room temperature, with various thicknesses, before and after irradiation with

17 Mev Au ions at 2×1014 cm−2.

Paper reference:Ion irradiation-induced polycrystalline InSb foam, R. Giulian, J.B. Salazar, D.J. Manzo, W. Just,A.M.H. de Andrade, J.R. Schoffen, F. Bernardi, D.L. Baptista and P.F.P. Fichtner, Journal of PhysicsD: Applied Physics, 50 (2017) 485104-8 pages.

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Bond-Breaking Efficiency of High-Energy Ions in Ultrathin Polymer Films

Ricardo Meurer Papaléo

Thin films of poly(methyl methacrylate) and poly(vinyl chloride) of different

thickness are used to investigate the effect of spatial confinement on the efficiency of

bond breaking induced by 2 MeV H and 2.1 GeV Bi ions. To this end, the areas of the

C-Cl (PVC) and C-O (PMMA) XPS peaks as a function of irradiation fluence were

measured. The relative intensity I of the XPS signal was obtained in the case of PVC

taking the ratio of the total chlorine to the total carbon peaks. For PMMA, the ratio of

the C3 or C4 areas to the sum of the C1 and C2 peaks was used. The values of I as a

function of fluence for different film thickness h are shown in Figure 1. Effective cross

sections for oxygen and chlorine loss are extracted for films down to a thickness of

about 5 nm and compared to theoretical estimations based on thickness-dependent

radial energy density profiles simulated with GEANT-DNA (Figure 2). The cross

sections are to a large extent thickness independent, indicating that bond breaking is

dominated by short-range processes. This is in contrast to the strongly reduced

efficiencies found recently for cratering induced by high-energy ions in similar ultrathin

polymer films.

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Figure 1. Relative intensity of deconvoluted C1s XPS peaks as a function of fluence for various initialfilm thicknesses. (a) C3 (CH3-O) and (b) C4 (C=O) peaks of PMMA irradiated by 2 MeV H+. (c) C3and (d) C4 peaks of PMMA irradiated by 2.1 GeV Bi ions. (e) Chlorine peak of PVC irradiated by 2MeV H+ using the ratios Cl/( C1+C3+C4) and (f) Cl/(Ctotal).

Figure 2. Results from MC simulations of 2 MeV H+ in water films. (a) Linear energy transfer( E(z)/ z) as a function of depth z; in slices of z=1nm; (b) deposited energy density as a function of radial distance r from the track center; (c) damage cross sections calculated from the simulatedε(r) curves of (b) using different laws of bond-breaking probability. Experimental cross sections arealso shown for comparison. The ε0 values for Cl loss are 73.6 eV/nm3 (hit model, m=1), 6.0 eV/nm3(hit model, m=2), 4.8 eV/nm3 (activation model), and for O-CH3 bonds are 344.3 eV/nm3 (hit, m=1),13.7 eV/nm3 (hit, m=2), and 7.6 eV/nm3 (activation).

Paper reference:Bond-breaking efficiency of high-energy ions in ultrathin polymer films, R. Thomaz, P. Louette,G. Hoff, S. Müller, J. J. Pireaux, C. Trautmann, and R.M. Papaléo, Physical Review Letters, 121(2018) 066101- 5 pages.

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Synthesis of a GaN nanolayer on (001) GaAs by N ion implantation

Rogerio Luis Maltez

In this work, we aimed to produce a GaN layer through N implantation into a

125-nm Si3N4 cap layer obtained by sputtering deposition on top of a (001) GaAs sub-

strate. The following facts suggested this approach: Ga-N bonds are more stable than

the Ga-As ones, which should favour the substitution of As by N atoms; As is more

volatile than Ga, which also facilitates the As replacement by N under hot implantation

followed by thermal annealing. In particular, GaN wide and direct band gap (3.4 eV for

the wurtzite phase and 3.3 eV for the zinc-blend one, at room temperature) allows its

use in high-power electronic devices with high breakdown voltages and high thermal

conductivity. Additionally, the combination of GaN with In (InGaN) or Al (AlGaN)

permits the manufacture of Light-Emitting Diodes (LEDs) with colors that run from red

to ultra-violet. Furthermore, blue InGaN-based lasers are available on the market,

where special growth techniques, such as Dislocation Elimination by the Epitaxial

Growth with Inverse Pyramidal Pits (DEEP), and Advanced-DEEP (A-DEEP), have to

be employed. The A-DEEP has been adopted to commercially produce standalone GaN.

In the latter, the chosen substrate is GaAs due to its much more similar thermal-expan-

sion coefficient, which is closer to the GaN one when compared with other substrate

candidates (sapphire, SiC, and Si).

N+ ions at 50 keV were implanted up to a fluence of 3×1017 cm-2 and, afterwards,

the sample was subjected to Rapid Thermal Annealing (RTA) at 850°C for 5 min under

N2 flow. Then we synthesized a continuous and, basically epitaxial, GaN nanolayer by

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N implantation. Furthermore, it was done on the top of a GaAs and not buried in a sub-

strate, which has been the typical case when concerning ion implantation synthesis. By

following this process, we were able to identify a transient GaN cubic phase with a lat-

tice parameter of (0.42 ± 0.01) nm. This lattice parameter is much smaller than the one

reported in the literature for the GaN zinc-blend phase (0.45 nm).

(a) Cross–sectional TEM micrograph of the as-implanted sample. The arrow head indicates the sam-

ple surface. The Si3N4/GaAs interface is the interface between layers 2 and 3. These regions are rich

in nitrogen and a bubble system was formed in both. (b) After annealed at 850°C for 5 min under N2

flow. The arrow head indicates the sample surface in each figure. In (b) we see pyramidal structures

extending from the GaN synthesized layer into the side where we had the Si3N4. (c) is a lower

magnification of the annealed sample showing voids formed in the underneath structure of the

synthesized GaN layer.

Paper reference:Synthesis of a GaN nanolayer on (001) GaAs by N ion implantation, H. Coelho-Júnior, J. H. R.dos Santos, and R. L. Maltez, Thin Solid Films, 642 (2017) 129-135.

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Direct Li+ incorporation into anodic TiO2 during its formation

Rogerio Luis Maltez

In this work, we report the incorporation of small cations (Li+) in the bulk of

compact TiO2 layers formed by electrochemical anodization in phosphoric acid based

electrolytes containing lithium perchlorate (LiClO4). We performed a direct measure-

ment using Elastic Recoil Detection Analysis (ERDA).

Our experimental set-up for ERDA is sketched in Fig. (a). A 10 MeV oxygen

beam (O4+) impinges the sample at low incidence angle (θ = 75o) and the recoiled

atoms are detected at an angle of 31o from the beam direction. A polyester film (mylar)

of 8 µm thickness is placed in front of the Si detector to stop the heavier O+4 projec-

tiles. A reference sample was prepared by implanting Li+ into a 140 nm thick compact

TiO2 layer obtained by anodization in 1M H3PO4 up to 70V. Li+ ions at 20 keV were

implanted up to a fluence of 5.75×1015 into the reference sample tilted 60o off, in order

to make the implantation shallower. The estimated peak Li-concentration of 0.6 at.%

was calculated (taking into account Li+ backscattering of 19% as evaluated by SRIM

simulation). Fig. (b) shows raw ERDA Li and H spectra of the prepared samples. The

sharp features below channel 35 are assigned to H. The channel scale of raw ERDA

spectra (< 35) was converted into a distance scale by implementing a locally developed

numeric algorithm. It was then compared with the oxide thickness of about 95 nm de-

termined using RBS. The channel range 45-75 (inset of Fig. (b)) falls in the energy

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range corresponding to Li atoms as evidenced by the red line corresponding to TiO2

layer charged electrochemically with Li. Fig. (c) compares the Li depth profile of sam-

ples produced with three distinct additions of Li+ concentration in the anodization solu-

tion, namely, 0.1, 0.5 and 1 M. Li can be detected practically within the entire oxide

film and the average Li concentration increases quasi linearly with the Li+ concentra-

tion, from 0.012 at%, (0.1 M Li+, blue line) to 0.07 at% (1M Li+, black line). Li inser-

tion under anodic polarization was not to be expected because of the outward electric

field within the oxide film.

(a) Schematic geometric arrangement used for ERDA measurements. (b) Raw ERDA spectra mea-sured from the recoiled H and Li atoms of the anodized samples with different concentrations of Liperchlorate. Inset is mainly a vertical zoom from the Li region, channel region from 45 to 75 (insidethe dotted-line rectangle), showing also the cathodically charged and ion implanted samples with

higher Li contents. (c) Lithium-concentration depth-profile of anodic-TiO2 grown in 1M H3PO4

containing different LiClO4 contents. Inset corresponds to the Li-concentration profile showing also

the cathodically charged and ion implanted samples with higher Li contents.

Paper reference:

Direct Li+ incorporation into anodic TiO2 during its formation, J. A. Peñafiel-Castro, B. Hahn, R.L. Maltez, G. Knörnschild, P. Allonguec and L. F. P. Dick, Chem, Commun., 54 (2018) 3251-3254.

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Publications in peer reviewed journals

[1] K. I. M. da Silva et al., “Tuning the structure and magnetic behavior of Ni–Ir-

based nanoparticles in ionic liquids,” Phys. Chem. Chem. Phys., vol. 20, no. 15,

pp. 10247–10257, 2018.

[2] R. Giulian et al., “Structural and electronic characterization of antimonide films made by magnetron sputtering,” J. Phys. D. Appl. Phys., vol. 50, no. 7, p. 075106,Feb. 2017.

[3] R. Giulian et al., “Ion irradiation-induced polycrystalline InSb foam,” J. Phys. D. Appl. Phys., vol. 50, no. 48, p. 485104, Dec. 2017.

[4] J. Adamski et al., “Core–Shell Fe–Pt Nanoparticles in Ionic Liquids: Magnetic and Catalytic Properties,” J. Phys. Chem. C, vol. 122, no. 8, pp. 4641–4650, Mar. 2018.

[5] A. Weilhard et al., “Challenging Thermodynamics: Hydrogenation of Benzene to 1,3-Cyclohexadiene by Ru@Pt Nanoparticles,” ChemCatChem, vol. 9, no. 1, pp. 204–211, Jan. 2017.

[6] L. A. Galves et al., “The effect of the SiC(0001) surface morphology on the growth of epitaxial mono-layer graphene nanoribbons,” Carbon N. Y., vol. 115, pp. 162–168, May 2017.

[7] G. K. Rolim, S. A. Corrêa, L. A. Galves, J. M. J. Lopes, G. V. Soares, and C. Radtke, “Chemical and morphological modifications of single layer graphene submitted to annealing in water vapor,” Appl. Surf. Sci., vol. 427, pp. 825–829, Jan. 2018.

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[8] G. V. Soares, S. Nakhaie, M. Heilmann, H. Riechert, and J. M. J. Lopes, “Growth of boron-doped few-layer graphene by molecular beam epitaxy,” Appl. Phys. Lett., vol. 112, no. 16, p. 163103, Apr. 2018.

[9] G. Copetti et al., “Reversibility of Graphene Photochlorination,” J. Phys. Chem. C, vol. 122, no. 28, pp. 16333–16338, Jul. 2018.

[10] M. He et al., “Lattice dynamics and Mg/Ti order in orthorhombic pseudobrookite-type MgTi 2 O 5,” J. Alloys Compd., vol. 699, pp. 16–24, Mar. 2017.

[11] A. Hirsch et al., “Structural, vibrational, and thermochemical properties of the monazite-type solid solution La 1– x Pr x PO 4,” J. Solid State Chem., vol. 245, pp. 82–88, Jan. 2017.

[12] R. Thomaz et al., “Bond-Breaking Efficiency of High-Energy Ions in Ultrathin Polymer Films,” Phys. Rev. Lett., vol. 121, no. 6, p. 066101, Aug. 2018.

[13] L. I. Gutierres, N. W. Lima, R. S. Thomaz, R. M. Papaléo, and E. M. Bringa, “Simulations of cratering and sputtering from an ion track in crystalline and amorphous Lennard Jones thin films,” Comput. Mater. Sci., vol. 129, pp. 98–106, Mar. 2017.

[14] M. C. Vebber, C. Aguzzoli, L. V. R. Beltrami, G. Fetter, J. da Silva Crespo, and M. Giovanela, “Self-assembled thin films of PAA/PAH/TiO2 for the photooxida-tion of ibuprofen. Part II: Characterization, sensitization, kinetics and reutiliza-tion,” Chem. Eng. J., Oct. 2018.

[15] T. P. Soares, C. S. C. Garcia, M. Roesch-Ely, M. E. H. Maia da Costa, M. Gio-vanela, and C. Aguzzoli, “Cytotoxicity and antibacterial efficacy of silver de-posited onto titanium plates by low-energy ion implantation,” J. Mater. Res., vol. 33, no. 17, pp. 2545–2553, Sep. 2018.

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[16] C. D. Nascimento, E. Granemann Souza, and C. Aguzzoli, “Correlation between electrical and compositional properties in cadmium sulfide deposited by laser ab-lation,” Thin Solid Films, vol. 651, pp. 39–41, Apr. 2018.

[17] M. Molossi, J. Catafesta, C. Alejandro Figueroa, and C. Aguzzoli, “Nitretação a plasma de zircônia estabilizada com ítria: um estudo comparativo,” Sci. cum Ind., vol. 5, no. 1, pp. 18–25, Aug. 2017.

[18] G. H. S. Dartora, E. Pitthan, and F. C. Stedile, “Unraveling the mechanisms re-sponsible for the interfacial region formation in 4H-SiC dry thermal oxidation,” J. Appl. Phys., vol. 122, no. 21, p. 215301, Dec. 2017.

[19] E. Pitthan, V. P. Amarasinghe, C. Xu, T. Gustafsson, F. C. Stedile, and L. C. Feld-man, “4H-SiC surface energy tuning by nitrogen up-take,” Appl. Surf. Sci., vol. 402, pp. 192–197, Apr. 2017.

[20] G. F. Trindade, L. L. F. S. Rosa, E. M. Stori, C. E. L. Dos Santos, and J. F. Watts, “Surface mass spectrometry as a new approach for the characterisation of coffee,”Surf. Interface Anal., vol. 50, no. 11, pp. 1051–1057, Nov. 2018.

[21] D. Einhardt Blank et al., “Proximate Composition, Nutrient Mineral and Fatty Acid of the Bunchosia glandulifera Fruit,” J. Food Nutr. Res., vol. 5, no. 8, pp. 575–578, Aug. 2017.

[22] P. F. C. Jobim, C. E. I. dos Santos, L. Jeromel, P. Pellicon, L. Amaral, and J. F. Dias, “Changes in the element concentration of the dorsal hippocampus CA1 re-gion during memory consolidation and reconsolidation,” J. Chem. Neuroanat., vol. 90, pp. 49–56, Jul. 2018.

[23] V. Z. C. Paes, M. V. Castegnaro, D. L. Baptista, P. L. Grande, and J. Morais, “Un-veiling the Inner Structure of PtPd Nanoparticles,” J. Phys. Chem. C, vol. 121, no.35, pp. 19461–19466, Sep. 2017.

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[24] F. Matias et al., “Ground- and excited-state scattering potentials for the stopping of protons in an electron gas,” J. Phys. B At. Mol. Opt. Phys., vol. 50, no. 18, p. 185201, Sep. 2017.

[25] N. E. Koval et al., “Vicinage effect in the energy loss of H2 dimers: Experiment and calculations based on time-dependent density-functional theory,” Phys. Rev. A, vol. 95, no. 6, p. 062707, Jun. 2017.

[26] M. Vos and P. L. Grande, “How the choice of model dielectric function affects thecalculated observables,” Nucl. Instruments Methods Phys. Res. Sect. B Beam In-teract. with Mater. Atoms, vol. 407, pp. 97–109, Sep. 2017.

[27] G. G. Marmitt, S. K. Nandi, D. K. Venkatachalam, R. G. Elliman, M. Vos, and P. L. Grande, “Oxygen diffusion in TiO 2 films studied by electron and ion Ruther-ford backscattering,” Thin Solid Films, vol. 629, pp. 97–102, May 2017.

[28] M. Vos and P. L. Grande, “Extracting the dielectric function from high-energy REELS measurements,” Surf. Interface Anal., vol. 49, no. 9, pp. 809–821, Sep. 2017.

[29] W. Assmann et al., “Charge-state related effects in sputtering of LiF by swift heavy ions,” Nucl. Instruments Methods Phys. Res. Sect. B Beam Interact. with Mater. Atoms, vol. 392, pp. 94–101, Feb. 2017.

[30] M. Vos, P. L. Grande, and G. Marmitt, “The influence of shallow core levels on the shape of REELS spectra,” J. Electron Spectros. Relat. Phenomena, vol. 229, pp. 42–46, Dec. 2018.

[31] S. K. Nandi et al., “Room temperature synthesis of HfO 2 /HfO x heterostructuresby ion-implantation,” Nanotechnology, vol. 29, no. 42, p. 425601, Oct. 2018.

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[32] H. Trombini, P. L. Grande, A. Hentz, M. Vos, and A. Winkelmann, “A comparisonof the analysis of non-centrosymmetric materials based on ion and electron beams,” Nucl. Instruments Methods Phys. Res. Sect. B Beam Interact. with Mater.Atoms, vol. 431, pp. 31–37, Sep. 2018.

[33] M. V. Moro, B. Bruckner, P. L. Grande, M. H. Tabacniks, P. Bauer, and D. Primet-zhofer, “Stopping cross section of vanadium for H + and He + ions in a large en-ergy interval deduced from backscattering spectra,” Nucl. Instruments Methods Phys. Res. Sect. B Beam Interact. with Mater. Atoms, vol. 424, pp. 43–51, Jun. 2018.

[34] M. Vos and P. L. Grande, “Modelling the contribution of semi-core electrons to the dielectric function,” J. Phys. Chem. Solids, vol. 124, pp. 242–249, Jan. 2019.

[35] S. Larramendi, L. Vaillant Roca, P. Saint-Gregoire, J. Ferraz Dias, and M. Behar, “Infiltration of CdTe nano crystals into a ZnO wire vertical matrix by using the isothermal closed space technique,” J. Cryst. Growth, vol. 475, pp. 274–280, Oct.2017.

[36] A. L. Hilario Garcia et al., “Genotoxicity induced by water and sediment samples from a river under the influence of brewery effluent,” Chemosphere, vol. 169, pp. 239–248, Feb. 2017.

[37] J. J. ZOCCHE et al., “Elemental composition of vegetables cultivated over coal-mining waste,” An. Acad. Bras. Cienc., vol. 89, no. 3 suppl, pp. 2383–2398, Oct. 2017.

[38] C. A. Matzenbacher et al., “DNA damage induced by coal dust, fly and bottom ash from coal combustion evaluated using the micronucleus test and comet assay in vitro,” J. Hazard. Mater., vol. 324, pp. 781–788, Feb. 2017.

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[39] C. S. Porta et al., “Cytotoxic, genotoxic and mutagenic evaluation of surface wa-ters from a coal exploration region,” Chemosphere, vol. 172, pp. 440–448, Apr. 2017.

[40] G. León-Mejía et al., “Intratracheal instillation of coal and coal fly ash particles in mice induces DNA damage and translocation of metals to extrapulmonary tis-sues,” Sci. Total Environ., vol. 625, pp. 589–599, Jun. 2018.

[41] A. P. Nordin et al., “In vitro genotoxic effect of secondary minerals crystallized inrocks from coal mine drainage,” J. Hazard. Mater., vol. 346, pp. 263–272, Mar. 2018.

[42] J. L. Russell, J. L. Campbell, N. I. Boyd, and J. F. Dias, “GUMAP: A GUPIXWIN-compatible code for extracting regional spectra from nuclear mi-crobeam list mode files,” Nucl. Instruments Methods Phys. Res. Sect. B Beam In-teract. with Mater. Atoms, vol. 417, pp. 46–50, Feb. 2018.

[43] F. Fernandes, L. A. B. Niekraszewicz, L. Amaral, and J. F. Dias, “Evaluation of detector efficiency through GUPIXWIN H value,” Nucl. Instruments Methods Phys. Res. Sect. B Beam Interact. with Mater. Atoms, vol. 417, pp. 56–59, Feb. 2018.

[44] D. Benedetti et al., “DNA damage and epigenetic alteration in soybean farmers exposed to complex mixture of pesticides,” Mutagenesis, vol. 33, no. 1, pp. 87–95, Feb. 2018.

[45] L. Espitia-Pérez et al., “Cytogenetic instability in populations with residential proximity to open-pit coal mine in Northern Colombia in relation to PM10 and PM2.5 levels,” Ecotoxicol. Environ. Saf., vol. 148, pp. 453–466, Feb. 2018.

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[46] F. Fernandes et al., “Considerations about projectile and target X-rays induced during heavy ion bombardment,” Nucl. Instruments Methods Phys. Res. Sect. B Beam Interact. with Mater. Atoms, vol. 417, pp. 19–25, Feb. 2018.

[47] A. Duarte et al., “Characterization of Brazilian ammunitions and their respective gunshot residues with ion beam techniques,” Forensic Chem., vol. 7, pp. 94–102, Mar. 2018.

[48] R. A. Z. Razera, H. I. Boudinov, F. S. B. Rodrigues, R. Z. Ferreira, and A. F. Feil, “Anomalous Current-Voltage Behavior in Al/TiO 2 /n-Si Structures,” Phys. statussolidi - Rapid Res. Lett., vol. 12, no. 6, p. 1800057, Jun. 2018.

[49] I. R. Kaufmann, A. C. Pick, M. B. Pereira, and H. I. Boudinov, “Characterization of a SiC MIS Schottky diode as RBS particle detector,” J. Instrum., vol. 13, no. 02, pp. P02017–P02017, Feb. 2018.

[50] D. Puglia, G. Sombrio, R. dos Reis, and H. Boudinov, “Photoluminescence prop-erties of arsenic and boron doped Si 3 N 4 nanocrystal embedded in SiN x O y matrix,” Mater. Res. Express, vol. 5, no. 3, p. 036201, Mar. 2018.

[51] G. V. Leite, E. A. Van Etten, M. M. C. Forte, and H. Boudinov, “Degradation of current due to charge transport in top gated P3HT—PVA organic field effect tran-sistors,” Synth. Met., vol. 229, pp. 33–38, Jul. 2017.

[52] I. R. Kaufmann, A. Pick, M. B. Pereira, and H. Boudinov, “Metal-insulator-SiC Schottky structures using HfO 2 and TiO 2 dielectrics,” Thin Solid Films, vol. 621, pp. 184–187, Jan. 2017.

[53] Y. A. Danilov et al., “Formation of the single-phase ferromagnetic semiconductor (Ga,Mn)As by pulsed laser annealing,” Phys. Solid State, vol. 58, no. 11, pp. 2218–2222, Nov. 2016.

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[54] R. Giulian et al., “Ion irradiation effects on Sb-rich GaSb films,” Mater. Res. Ex-press, Nov. 2018.

[55] H. Coelho-Júnior, J. H. R. dos Santos, and R. L. Maltez, “Synthesis of a GaN nanolayer on (001) GaAs by N ion implantation,” Thin Solid Films, vol. 642, pp. 129–135, Nov. 2017.

[56] J. A. Peñafiel-Castro, B. Hahn, R. L. Maltez, G. Knörnschild, P. Allongue, and L.

F. P. Dick, “Direct Li + incorporation during the anodic formation of compact TiO

2 layers,” Chem. Commun., vol. 54, no. 26, pp. 3251–3254, 2018.

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Conference Proceedings

1) RODRIGUES, F. S. ; BOUDINOV, H. . Fabrication and characterization of a pH

sensor. In: 32th Symposium on Microelectronics Technology and Devices, 2017,

Fortaleza. SBMICRO_2017, 2017.

2) LEITE, G. ; E.A. Van Etten ; VOGT, M. A. H. ; BOUDINOV, H. . Photolithographic

and Plasma Etching Technique for Organic Field Effect Transistor Fabrication. In: 32th

Symposium on Microelectronics Technology and Devices, 2017, Fortaleza.

SBMICRO_2017, 2017.

3) BOUDINOV, H.; E.A. Van Etten ; LEITE, G. ; VOGT, M. A. H. . Study of the

source/drain contact resistance effect in Ni/P3HT/PVA/Al OFETs on flexible

substrates. In: 32th Symposium on Microelectronics Technology and Devices, 2017,

Fortaleza. SBMICRO_2017, 2017.

4) Kaufman I. ; PICK, A. C. ; M.B. Pereira ; BOUDINOV, H. . Ni/Al2O3/4H-SiC

Schottky diodes. In: 32th Symposium on Microelectronics Technology and Devices,

2017, Fortaleza. SBMICRO_2017, 2017.

5) RAZERA, R. A. ; A. Moehlecke ; Zanesco I ; BOUDINOV, H. . Passivation Analysis

of the Emitter and Selective Back Surface Field of Silicon Solar Cells. In: 32th

Symposium on Microelectronics Technology and Devices, 2017, Fortaleza.

SBMICRO_2017, 2017.

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6) M. Motapothula, R. Fadanelli, M.B.H. Breese. "New insights of molecular (H2+) ion

channeling phenomenon in ultra-thin Si membranes" In: 10th International Symposium

on Swift Heavy Ions in Matter (SHIM) & 28th International Conference on Atomic

Collisions in Solids (ICACS), 2018, Caen.

7) G.H.S. Dartora, E. Pitthan, F. C. Stedile, Unraveling the Oxidation Mechanisms

Taking Place in Early Steps of 4H-SiC Dry Thermal Oxidation, International

Conference on Silicon Carbide and Related Materials ICSCRM 2017, Washington DC,

U.S.A.

8) E. Pitthan, Dartora, G.H.S., F. C. Stedile, Incorporation and Stability of Phosphorus

in the SiO2/SiC Interfacial Region Deposited by Sputtering, International Conference

on Silicon Carbide and Related Materials ICSCRM 2017, Washington DC, U.S.A.

9) R. THOMAZ, P. LOUETTE, G. HOFF, J.J. PIREAUX, C. TRAUTMANN. "Bond

breaking cross sections in polymer ultrathin films irradiated by high-energy ions". In:

10th International Symposium on Swift Heavy Ions in Matter, 2018, Caen.

10) R. Thomaz, M. M.DELUCIS, P. ERNST, M. SCHLEBERGER, R.M. PAPALÉO.

"Surface nanostructures induced by highly-charged ions on ultrathin PMMA films". In:

10th International Symposium on Swift Heavy Ions in Matter, 2018, Caen.

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11) R.M. PAPALÉO, R. THOMAZ, C. TRAUTMANN, G. HOFF, J. J. PIREAUX, L.I.

GUTIERRES. "Effect of Spatial confinementon the radiolytic efficiency of high energy

ions in polymers". In: International Conference on Applications of Radiation Science

and Technology, 2017, Viena.

12) R. THOMAZ, P. LOUETTE, G. HOFF, S. MÜLLER, J. J. PIREAUX, C.

TRAUTMANN. "On the radiolytic efficiency of high-energy ions in ultrathin polymer

films". In: The 19th International Conference on Radiation Effects in Insulators, 2017,

Versailles.

13) C.R.B. ESTEVES, R. THOMAZ, R. M. PAPALÉO. "Surface morphology and

porosity induced by swift heavy ions of low and high stopping power in PMMA thin

films". In: The 19th International Conference on Radiation Effects in Insulators, 2017,

Versailles.

14) L.A. GALVES, ; J.M. WOFFORD, ; G. V.Soares, ; U. JAHN,; PFULLER, C. ; H.

RIECHERT,; J. M. J. Lopes, . "The effect of the SiC(0001) surface morphology on the

growth of epitaxial monolayer graphene nanoribbons" In: Compound Semiconductor

Week, 2017, Berlin.

15) G.V.Soares, H. RIECHERT,; J. M. J. Lopes," Hydrogen incorporation in multilayer

graphene investigated with nuclear reaction analysis" in: Braziliam MRS. 2017,

Gramado

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Oral contributions and invited talks

1) Ivan Kaufman, 32th Symposium on Microelectronics Technology and Devices,

2017, Fortaleza, Oral Contribution.

2) Henri Boudinov, 32th Symposium on Microelectronics Technology and Devices,


3) Ricardo Razera, 32th Symposium on Microelectronics Technology and Devices,


4) Frâncio Rodrigues, 32th Symposium on Microelectronics Technology and Devices,


5) Gabriel Leite, 32th Symposium on Microelectronics Technology and Devices, 2017,

Fortaleza, Oral Contribution.

6) Raquel Giulian, 1st TYAN International Thematic Workshop "Fundamentals of

Photoelectrochemistry: From Materials Chemistry to Energy Conversion", 2018,

Chascomus, Argentina, Invited Lecture.

7) Raquel Giulian, Encontro de Outono SBF, 2018, Foz do Iguaçu, Invited Talk.

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8) Raquel Giulian, XVI SBPMat, 2017, Gramado, Oral Contribution.

9) Charles Airton Bolzan, Oral Contribution, IX Conferencia Latinoamericana de

Colisiones Inelásticas en la Materia, 2018, Viña del Mar, Chile.

10) Johnny Ferraz Dias, Invited Talk, International Conference on Nuclear Microprobe

Technology and Applications. "Considerations about projectile and target X-rays

induced during heavy ion bombardment". 2018, Guildford, United Kingdom.

11) Johnny Ferraz Dias, Oral Contribution, International Conference on Ion Beam

Analysis. "Projectile X-ray yields induced by heavy ion impact on solids". 2017,

Shanghai, China.

12) Johnny Ferraz Dias, Oral Contribution, International Conference on Particle-

Induced X-Ray Emission. "Projectile and target Xrays induced by heavy ions". 2017,

Split, Croatia.

13) Pedro Luis Grande, Invited Talk, 25th International Symposium on Ion-Atom

Collisions (ISIAC). "Energy-transfer and transport cross sections in dressed electron-

ion binary collisions", 2017. Palm Cove, Cairns, Australia.

14) Pedro Luis Grande, Invited Talk, 22nd International Workshop on Inelastic Ion-

Surface Collisions. "New approach for ion stopping in an electron gas", 2017, Dresden,

Germany.

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15) Pedro Luis Grande, Oral Contribution, 9th International Symposium on

BioPIxe."New approach for ion stopping in an electron gas", 2018, Foz do Iguaçu,

Brasil.

16) Pedro Luis Grande, Invited Talk, 9th International Workshop on High-Resolution

Depth Profiling. "New developments on the energy loss of slow and high energy ions in

an electron gas system", 2018, Uppsala, Sweden.

17) Pedro Luis Grande, Oral contribution, 10TH INTERNATIONAL SYMPOSIUM

ON SWIFT HEAVY IONS IN MATTER & 28TH INTERNATIONAL CONFERENCE

ON ATOMIC COLLISIONS IN SOLIDS. "A non-perturbative approach for the

stopping power of ions and dimers in an free electron gas system", 2018, Caen, France.

18) Pedro Luis Grande, Invited Talk, Congresso Brasileiro de Física Médica. "O Futuro

da Protonterapia", 2018, Porto Alegre, Brasil.

19) Pedro Luis Grande, Oral Contribution, IX Conferencia Latinoamericana de

Colisiones Inelásticas en la Materia, "Pérdida de Energía y Potenciales de Dispersión

para el Poder de Frenamiento de Protones y Dímeros", 2018, Viña del Mar, Chile.

20) Carla Eliete Iochims dos Santos, Oral Contribution, International Conference on

Particle-Induced X-Ray Emission. "Elemental signature of Brazilian foodstuffs by

PIXE". 2017, Split, Croatia.

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21) Claudio Radtke, Oral Contribution, 9th International Workshop on High-Resolution

Depth Profiling. "Nuclear reaction profiling as a probe of atomic transport in dielectric

layers on germanium", 2018, Uppsala, Sweden.

22) Claudio Radtke, Oral Contribution, 2018 MRS Fall Meeting. "Chlorine and

Fluorine Incorporation in MoS2.", 2018, Boston, EUA.

23) Gustavo H. S. Dartora, Oral Contribution, International Conference on Silicon

Carbide and Related Materials. "Unraveling the oxidation mechanisms taking place in

early steps of 4H-SiC thermal oxidation". 2017, Washington, DC, EUA.

24) Jonder Morais, Invited Talk, XVI SBPMat, "Unraveling the inner arrangement of

PtPd nanoparticles: Structure versus reactivity", 2017, Gramado, Brazil.

25) Jonder Morais, Invited Talk, Workshop Surface Science Rio (WS2RIO). "Probing

the inner Structure of PtPd nanoparticles", 2017, Rio de Janeiro, Brazil.

26) Jonder Morais, Oral Contribution, 9th International Workshop on High-Resolution

Depth Profiling. "PtPd nanoparticles compositional profiling using STEM-EDX and

MEIS", 2018, Uppsala, Sweden.

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27) Jonder Morais, Invited Talk, 10th Brazilian / German Workshop on Applied Surface

Science. "Tayloring and probing the atomic arrangements of bimetallic nanoparticles",

2018, Bad Dürkheim, Germany.

28) Jonder Morais, Oral Contribution, LNLS 28th Annual Users Meeting (RAU).

"Probing PtPd nanoparticles using ions, electrons and x-rays", 2018, Campinas, Brazil.

29) I. Alencar, Oral Contribution, 18th International Conference on Luminescence.

"Thermal annealing of CaF2 crystals irradiated with swift heavy ions: Optical

absorption, Raman scattering and luminescence". 2017, João Pessoa, Brazil.

30) I. Alencar, Oral Contribution, XVI Brazilian Material Research Society Meeting.

"Profiling plasma doped Si/SiO2:As by Medium Energy Ion Scattering". 2017,

Gramado, Brazil.

31) I. Alencar, Oral Contribution, XVI Brazilian Material Research Society Meeting.

"Time-of-Flight Secondary Ion Mass Spectrometry using continuous MeV beams as

primary ions". 2017, Gramado, Brazil.

32) I. Alencar, Oral Contribution, 9th International Symposium on BioPIXE. "Online

ToF-SIMS: Investigating the exposure to MeV ions". 2018, Iguazu Falls, Brazil.

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33) I. Alencar, Oral Contribution, 9th International Workshop on High Resolution

Depth Profiling. "Depth profiling thin solid layers by the break-up of medium energy

H2 dimers". 2018, Uppsala, Swedden.

34) I. Alencar, Oral Contribution, 28th International Conference on Atomic Colisions in

Solids & 10th International Symposium on Swift Heavy Ions in Matter. "Thermal

annealing of calcium fluoride crystals irradiated with swift heavy ions: Optical

absorption, Raman scattering and luminescence". 2018, Caen, France.

35) I. Alencar, Invited Talk, International Conference on Processing and Manufacturing

of Advanced Materials. "Unraveling the interactions of high-energy ions with solid

targets by sputtering experiments". 2018, Paris, France.

36) R. M. Papaléo, oral contribution, 2018 MRS Fall Meeting Damage efficiency of

high-energy ions in ultrathin polymer films, 2018, Boston , EUA.

37) R. M. Papaléo, oral contribution, Radiation Effects in Insulators, On the radiolytic

efficiency of high-energy ions in ultrathin polymer films, 2017, Versailles , França.

67



2017/18

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Report

Supervision of thesis and dissertations (completed)

1) Horácio Coelho Júnior, Thesis (2018), "Síntese por feixe de íons de GaN-layer sobre

GaAs", Graduate Program in Physics at UFRGS, Funding: Capes, Supervisor: Rogério

Luís Maltez.

2) Frâncio Souza Berti Rodrigues, Dissertation (2018) "Fabrication of Ion Sensitive

Field Effect Transistors.", Graduate Program in Microelectronics at UFRGS, Funding:

Capes, Supervisor: Henri Boudinov.

3) Ivan Rodrigo Kaufmann, PhD Theses (2017) "Carbeto de silício (SiC) como material

para detecção de radiação.", Graduate Program in Microelectronics at UFRGS, Fund-

ing: Capes, Supervisor: Henri Boudinov.

4) Eliana Aquino Van Etten, PhD Theses (2017) "Desenvolvimento e caracterização de

materiais para uso em transistores orgânicos de efeito de campo.", Graduate Program in

Microelectronics at UFRGS, Funding: Capes, Supervisor: Henri Boudinov.

5) Flávia Ferreira Fernandes, PhD thesis (2017). "Medidas de Seção de Choque Total

de Produção de Raios X Característicos da Camada K Induzidos por Íons Pesados".

Graduate Program in Physics, Institute of Physics, UFRGS. Funding: CNPq. Supervi-

sor: Johnny Ferraz Dias.

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6) Vagner Zeizer Carvalho Paes, Caracterização de Nanopartículas Bimetálicas de

PtxPd1-x, através das técnicas MEIS e STEM (Characterization of bimetallic PtxPd1-x

nanoparticles by MEIS and STEM techniques). Supervisor: Jonder Morais.

7) Gabriel Guterres Marmitt, Óxidos metálicos de memórias resistivas investigados por

retroespalhamento de elétrons e íons. (Metal oxides of resistive memories investigated

by electron and ion backscattering.). Supervisor: Pedro Luis Grande.

8) Milena Cervo Sulzbach, Síntese e caracterização por feixe de íons de memórias re-

sistivas de TiO2 (Synthesis and characterization of TiO2 resistive memories by ion

beams). Spervisor: Pedro Luis Grande

9) Flávio Matias da Silva, "Perda de energia e potenciais de espalhamento para o frea-

mento de Prótons e Dímeros". ("Energy loss and scattering potentials for stopping of

Protons and Dimers.). Supervisor: Pedro Luis Grande.

10) Diego Adalberto Amarillo Caniza, Dissertation (2017). "PROCEDÊNCIA E AUT-

ENTICIDADE DA ERVA-MATE (Ilex paraguariensis) ATRAVÉS DE MAR-

CADORES GEOQUÍMICOS DETERMINADOS POR PIXE". Graduate Program in

Physics, Institute of Physics, Mathematics and Statistics (IMEF), FURG. Funding:

Capes. Supervisor: Carla Eliete Iochims dos Santos.

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Report

11) Guilherme Koszeniewski Rolim, Processamento Térmico de Grafeno e sua Síntese

pela Técnica de Epitaxia por Feixes Moleculares (Graphene thermal processing and

synthesis by molecular beam epitaxy.). Supervisor: Cláudio Radtke.

12) Eduardo Pitthan Filho, Thesis (2017), "Investigação de defeitos e de métodos passi-

vadores da região interfacial SiO2/SiC", Graduate Program in Microelectronics at

UFRGS, Funding: Capes, Supervisor: Fernanda Chiarello Stedile.

13) Gustavo Henrique Stedile Dartora, Dissertation (2018) "Investigação dos Processos

de Crescimento Térmico de Dióxido de Silício Sobre Carbeto de Silício" Graduate Pro-

gram in Microelectronics at UFRGS, Funding: Capes, Supervisor: Fernanda Chiarello

Stedile.

14) Josiane Bueno Salazar, PhD Thesis (2017) "Ion irradiation effects in InSb films",

Graduate Program in Physics at UFRGS, Funding: CNPq, Supervisor: Raquel Giulian.

15) Taís Orestes Feijó. Dissertation (2017) "Crescimento de grafeno por CVD e sua in-

teração físico-química com hidrogênio" 2017. Graduate Program in Microelectronics at

UFRGS, Funding: Capes, Supervisor: Gabriel Vieira Soares.

16) Andreia Gorgeski, Thesis (2017), "Influência da composição, arranjo atômico e su-

porte na reatividade das nanopartículas de Pt-Pd com o enxofre", Graduate Program in

Physics at UFRGS, Funding: Capes, Supervisor: Jonder Morais and Fabiano Bernardi.

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17) Danieli B. Guerra, Dissertation (2017), SÍNTESE E MODIFICAÇÃO DE

NANOFIOS DE Bi e Bi2+xTe3-y POR IMPLANTAÇÃO E IRRADIAÇÃO IÔNICA,

Graduate Programme in Materials Engineering and Technology at PUCRS, CAPES,

Supervisor: R. M. Papaléo.

18) Christian R. Esteves, Thesis (2018), Modificação superficial de filmes finos

poliméricos por feixe de íons e tratamentos térmicos, Graduate programme in materials

engineering and technology at PUCRS, CAPES, Supervisor: R. M. Papaléo.

Organization of conferences

1) BioPIXE Symposium: "International Symposium on BioPIXE". Organizers: Johnny

Ferraz Dias, Livio Amaral, Maria Lúcia Yoneama. Foz do Iguaçu, Brazil, 2018.

2) SBPMat Symposium G: “Analysis and Modification of Materials with Electron and

Ion Beams”. Organizers: Paulo F. P. Fichtner, Daniel Baptista, Pedro L. Grande, Gra-

mado, Brazil, 2017.

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Members in international committees and in

editorial boards of scientific journals

1) Fernanda Chiarello Stedile - Member of the international committee of the Interna-

tional Conference on Ion Beam Analysis (IBA).

2) Moni Behar, Radiation Effects on Insulators. Member of the IC.

3) Moni Behar, Member of the IC of the Encontros Sudamericanos de Colisiones In-

elasticasda Materia.

4) Moni Behar, member of the IC of the Conference of REM (Radiation effects on the

matter).

5) Pedro L. Grande - Member of the international committee of the International Con-

ference on Ion Beam Analysis (IBA).

6) Pedro L. Grande - Member of the international committee of the International Con-

ference of Atomic Collision in Solids (ICACS).

7) Pedro L. Grande - Member of the international committee of the International Work-

shop on High-Resolution Depth Profiling (HRDP).

8) Pedro L. Grande - Member of the International Committee of Colisiones Inelasticas

na Materia.

9) Johnny Ferraz Dias - Member of the International Committee of the International

Conference on Particle-Induced X-ray Emission (PIXE).

10) Johnny Ferraz Dias - Member of the International Committee of the International

Symposium on BioPIXE (BioPIXE).

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11) Paulo F. P. Fichtner - Member of the International Committee of the Conference on

Ion Beam Modification of Materials (IBMM).

12) Paulo F. P. Fichtner - Member of the Physics Committee from the Brazilian Na-

tional Research Council (CNPq).

13) R. M. Papaléo, Member of the International Committee of the conference Radiation

Effects on Insulators.

14) R. M. Papaléo, Member of the International Committee of the International Sympo-

sium on Swift Heavy Ions In Matter.

Projects

IAEA, Coordinated Research Project F11021. "Enhancing Nuclear Analytical

Techniques to Meet the Needs of Forensic Science". 2017/2021.

ARD/PPP -Fapergs. "Caracterização e análise de nanopartículas metálicas para

aplicações biológicas". 2016-2019

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Funding programs and agencies

INES

http://engenhariadesuperficies.com.br/

FINEP

http://www.finep.gov.br/

PRONEX ‒ Programa de Apoio aos

Núcleos de Excelência

http://www.cnpq.br/web/guest/pronex

CNPq

http://cnpq.br/

CAPES

http://www.capes.gov.br/

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http://www.capes.gov.br/

http://cnpq.br/

http://www.cnpq.br/web/guest/pronex

http://www.finep.gov.br/

http://engenhariadesuperficies.com.br/

Laboratório de Implantação Iônica

Instituto de FísicaUniversidade Federal do Rio Grande do Sul

Av. Bento Gonçalves 950091501-970, Porto Alegre – RS, BrasilPhone +55 51 33087004 Fax +55 51 33087296http://implantador.if.ufrgs.br

laboratório de implantação iônica instituto de …grande/arep2018.pdflaboratório de...

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