LED TO CHANCE

Sapphire ( )

Sapphire () (Al2O3) ,, , ,

(LED)

LED

/

GaP/GaP LPE 565 700

GaAsP/GaP VPE 630 650

AlGaAs/GaAs LPE 660

ZnCdSe MBE 565

I nGaAlP/GaAs MOCVD 570 645

I nGaAlP/GaP

I nGaAlP/Sapphire

I nGaAlP/Silicon

I nGaN/Sapphire MOCVD 430 525

()I nGaN/Silicon

I nGaN/SiC

LED

LED

SiC

MES/SPC

MES/SPC

KY

CZ

MES /SPC

SPC

MES

Al2O3

:

30KY

,

30KY

1 2

60KY

,

SEMC-RC150

Ingot 2~6Ingot(): 250mm

5 KW

, V 220/110()

, Hz 50/60

MES/200MES

INVOICE

INVOICE

INVOICE

INVOICE

MES/200MES

ERP

ERP

ERP

MES

MES

MES

MES

MES

MES

MES

MES

FQC

MES

MES

ERP

ERP

PullingInspMountDrillingCutting

GrindingFlattingInsp FQC Packing

MES

Ingot NO Shipping NO

Shipping Lebel

:Al2O3

Crystal NO

R/M No

25~30kg / 1Run

200MES

200MESProject Schedule

200MES Document Management

30

MES

SPC

60~80

HEM

CZ

30,

HEM

101

182

18,3

25

5

4

105

106

107

58

KYCZ

HEM

Process

CZ V.S. KY

- I

(mm)

(kg)

MPa

cm-2

4040 3.0 100 150 >105

450500 200 1.0 105

Kyocera

Namiki

30050 11 30 105SapphireTech.

100 103 105CrystalSys./GT

- II

-Rocking Curve

-Rocking Curve

Rocking Curve

-CZ :4.4 5.8sec () -KY3.6 3.8sec-HEM:5.5 11.7sec

Rocking CurveKYRocking CurveCZ

-KY EPD: 100102-2-CZ EPD 0.91.2105 -2

EPDKYEPDCZ

Kyropulos Method (KY)

CZ Method

KY V.S. CZ

Kyropulos Method--- Cz Method---

High quality()

Poor quality

()

Low Cost ()

High cost()

Hard to study mass production()

Poor quality

()

For larger crystal growth ()

Hard to control the orientationwell()

Low Growth Speed()

High growth speed()

KY V.S. CZ

KY CZ

CZ vs KYGrowth Method CZ KY

Boule size 4, useable length 200mm

30KG

Growth Axis A A

Crucible Ir Mo/W

Hot zone ZrO2 Mo

Heating High Frequency Including Heating

Resistive Heating

Cycle time 7.2 days 10 days

Max. output per month (2) 1120mm 2100mm

Crucible Cost (CZ) 360000 15000

Crucible repair cycle time(Ir)/ Crucible Life time(W) 1.5 2.5

Crucible Repair Cost(CZ) 33000 0

Crucible Repair Cost(CZ)/ Crucible Cost (KY) 22000 6000

Machine Cost (include hot zone/ exclude Crucible ) 450000 250000

EM wave Serious Very small

Power consumption 45kw 42kw

Sapphire for 2 Substrate

LED

Turnkey solution provider

Sales

Support

Application

Support

Service

Support

After LED RD line set up:

1. 2. 3. 4. 5. SOP6.

1~6 6~12 12~

/

move-in

(trouble-shooting)

SOP

SOP

()

2 inch wafer Spec.

: 1st Yield:85%;Total Yield:95%

2 inch PSS wafer Spec.

:1st Yield:60%;Total Yield:90%

Sapphire for 2Substrate

Sapphire () in LED industry

Pattern Sapphire Substrate (PSS)Dry Etch(DPSS)Wet Etch (WPSS)

()

HMDS

ICP

PR-

Strip

PR-

Strip

+ D P S S ; ~ 5 0 K

+ W P S S , ; ~ 5 0 K

SiO2

Annea-

ling+

HMDS

BOE-

Strip

Sapphire Process Introduction

Diamondwire slicing

Double Side Lapping + B4C F240 (GC JIS240)Upper wheel balancing unit

Both plate cooling system

4 Independent Drives

Machine Features on points

Step 1 B4C Double side lapping process

Step 2

Resin Special Copper + diamond slurry process

Step 3

Special Metal Tin + diamond slurry process

Step 4-5 Rough & Fine CMP process

Template or Wax bonding

OR

Double Side Polish Process

Double Side Polish

Bow/Wrap result

-Bow/Warp result

Single Side Diamond Lapping Machine

Single Side Diamond Lapping Machine

CMP Machine

Cost Analyze for 2 sapphire wafer (100K)

Polish wafer

RD Line : 1.2

Polish wafer

100K :2

DPSS

DPSS50K :1.5~2

PSS

WPSS50K :1.2~1.5

2 inch wafer

Price and Profit by 2011 Q4

2011 Q4 Sapphire 2 inch wafer (USD)

2 inch ingot by 1 mm $8

2 inch Polished Wafer $13-15

2 inch PSS Wafer $23-25

waferUSD3

USD23

PSS wafer

USD5USD56

Note:2 inch Polish wafer :NTD200,000,000/29 =USD 6,896,5512 inch PSS wafer :NTD150,000,000/ 29=USD 5,172,414

LED sapphire wafer

+886-3-4014077+886-3-494-6624E-mailservice@tochance.com.tw32446 489