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Axel HülsmannAxel Tessmann
Jutta KühnOliver Ambacher
mHEMT based MMICs, Modules, and Systems for mmWave Applications
Tullastraße 7279108 Freiburg, Germany
+49 761 5159 0www.iaf.fraunhofer.de
Christaweg 5479114 Freiburg, Germany+49 761 5951 [email protected]
About OndoSense GmbH
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founder: Dr.-Ing. Mathias Klenner (CEO)Bernhard Schöne-Remmeau (CFO)Dr.-Ing. Axel Hülsmann (CTO)
background: Dr. Klenner und Dr. Hülsmann have been with Fraunhofer- IAF for many years working on applied research on millimeter wave sensorics on the basis of III/V-semiconductors. Bernhard Schöne-Remmeau is an industrial engineer from University Kaiserlautern.
OndoSense: OndoSense has been founded in March 2018 to develop, to produce, and put on the market cost efficient millimeter wave sensors partially based on high performance MMICs from Fraunhofer-IAF. OndoSense is supported by University of Freiburg and Fraunhofer-IAF by Prof. Oliver Ambacher (INATECH) and funded by the grand program EXIST supported by the European Social Fund and the German ministry of economics.
About Fraunhofer - IAF
3
founded: 1957
staff: 280
funding: 28 million € / year
labs and offices: 8.000 m²
clean room: 1000 m2
The Fraunhofer Institute for Applied Solid State Physics (IAF) is a science and technology center in the field of micro- and nano-patterned compound semiconductors and diamond
About Fraunhofer Society
§ Largest organization for applied Research in Europe
§ headquarter in Munich
§ Founded in 1949
§ 60 institutes @ 40 locations
§ 25,000 employees
§ 2 B€ research budget
§ Fraunhofer funding model: 1/3 basic, 1/3 project, 1/3 industry
Outline:
§mHEMT
§MMICs
§Modules
§Systems
§Application
metamorphic buffer
Epitaxy of metamorphic HEMT structures
100 nm gate length:
65 % In content
ns = 3.81012 cm-2
µe = 11000 cm2/Vs
50 nm gate length:
80 % In content
ns = 4.21012 cm-2
µe = 11800 cm2/Vs
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HEMT (High Electron Mobility Transistor)
g
effsat,T L2
vf
π
barrier
Lg
substrate
channel (2DEG)
d DS
draingatesource
Channel vsat,eff
[107 cm /s]
fT [G H z]
@ 0.1 µm
gate length
G aA s 1.1 170
In0.25G a0.75A s 1.5 240
In0.53G a0.47A s 2.0 310
Lattice matched on GaAs (AlGaAs/GaAs) HEMT
Strained on GaAs (AlGaAs/InGaAs) pHEMT
Lattice matched to InP (AlInAs/InGaAs)
mHEMT
Relaxed on GaAs (AlInAs/InAs) enhanced
mHEMT
Relaxed on GaAs (AlSbAs/InSb) advanced
mHEMT
Channel material
Gate length
§ Small gate length and high electron velocity enable high fT
Equivalent Circuit Model for mHEMTs
§ Covers wide bias range and frequency range § Scalable with gate width, variable finger number§ Proper noise description§ Temperature dependence
mHEMT - metamorphic HEMT withInGaAs channel on GaAs substrate
LG = 100 nmfT/fmax = 220/300 GHz
50 nm375/600 GHz
35 nm515/900 GHz
20 nmfT = 660 GHz(Leuther et al. IPRM 2011)
Development of InGaAs/InAlAs mHEMT Technology
LNA MMICs
Technologygain (dB)@ 94 GHz
noise (dB)@ 94 GHz
gain (dB)@ 210 GHz
noise (dB)@ 210 GHz
50 nm 20 1.9 17.5 4.8
100 nm 22 2.5 18 7.4
50 nm technology achieves record noise figures @ 94 and 210 GHz
The Art of Device Modelling above 100 GHz
Gate feed
Drain feed
Capacitve shell
Inductive shell
Resistive shell
Intrinsic core
The Art of Device Modelling above 100 GHz
§ Having n-Elements to fit my model, I can simulate an elephant
§ With n+1 Elements, I can even wave with the trunk
§ Think about physical plausibility
The Art of Device Modelling above 100 GHz
§ Discrete distributed equivalent circuit
§ Two gate finger FET§ Common source configuration
The Art of Device Modelling above 100 GHz
§ On-Wafer VNA s-Parameters up to 750 GHz§ Temperature controlled calibration§ Calibration test set (short, open?, through, 50 Ohm)§ Device test structures with different gate width and
different reference planes§ Grounded probe pads§ Identification of the reference plane§ S-Parameter measurements on several devices
distributed on wafer§ S-Parameter measurements on different wafers and
batches§ Small signal shell model (drain and gate as open
stubs!)§ Verification model <-> measurement
2-port
Modelling of a 5-stage LNA with 50nm mHEMTs
Outline:
§mHEMT
§MMICs
§Modules
§Systems
§Application
50nm mHEMT MMIC Process on 4” GaAs Wafers
§ Two metalization layers§ 2,7 µm gold air bridges§ 225 pF/mm2 MIM capacitors§ 50 / NiCr resistors
SiNNiCrOHM MESA
GATE
SUBSTRATE
Au
METG
SiNMET1 MET1
§ 250 nm CVD SiN passivation§ Full wafer-size backside process§ Microstrip technology and
grounded coplanar waveguide
MMIC – Monolithic Microwave Integrated Circuit
mHEMT based MMIC for THz Frequencies
50 nm
35 nm
MMIC S-MMIC TMIC
100 nm
20 nm
LNA 440 - 480 GHz
Multiplier ×1278 - 100 GHz
Rx, Tx 210 - 270 GHz
Multiplier ×3280 - 320 GHz
Multiplier ×2380 - 440 GHz
0 100 200 300 400 500 600 700 800 900 10001E-4
1E-3
0.01
0.1
1
10
atm
osph
eric
atte
nuat
ion
[dB/
m]
frequency [GHz]
1 bar, 20°C, 43.4% RH
0
1
2
3
4
5
80 85 90 95 1000
5
10
15
20
25
gain
[dB
]
Frequency [GHz]
gain
NF
NF
[dB
]
Two-Stage W-Band Low-Noise Amplifier MMIC
§ Reactively matched§ Cascode mHEMTs§ Gate length 50 nm§ Gate width 4 15 µm§ Chip-size 0.75 1.5
mm2
§ Gain > 20 dB @ 75 ... 105 GHz
§ Noise figure 2 dB @ T = 293 K
§ Power consumption 48 mW§ Vd = 1.6 V, Id = 30 mA
Ultra-Broad-Band Millimeter-Wave Amplifiers
§ 35 nm mHEMT technology§ 4-stage cascode low-noise
amplifier§ Chip size 0.5 × 1.2 mm2
§ Gain > 20 dB (220 - 325 GHz)§ Noise figure 6.9 dB (Simulation)§ Power dissipation 50 mW
220 240 260 280 300 320-30-20-10
0102030
S22S-
Para
met
ers
[dB]
Frequency [GHz]
S21
S11
Frequenz [GHz]
S-Par
amet
er [
dB]
20 nm
220 GHz Transmitter and Receiver MMICs forUltra-High-Speed Data Link
§ Fully integrated mmW ICs§ Very broadband IF§ Identical chip layout
eases module integration§ MMIC size 0.75 × 2 mm2
X2mixer
LO
IF
RF
X2mixer
LO
IF
RF
300 GHz Radar Chip Set for SAR Imaging Systems
§ Chip set for miniaturized Synthetic Aperture Radar (SAR)§ 40 GHz bandwidth for ultra-high resolution
§ 35 nm gate length metamorphic HEMTs
§ 6-stage common source amplifier§ 12 dB small-signal gain @ 630 GHz§ Compact coplanar design§ Chip size only 0.5 0.27 mm2
§ Record value (IAF, NGC/USA)
630 GHz Amplifier MMIC
IN
Phase
MW IN
MW IN
Oscillator
Mixer
Oscillator
LNA
PhaseLNA
fIF = | fTX – fRX |fIF = | fTX – fRX |
Mixer
Multifunctional Integration: 94 GHz FMCW Radar MMIC
§ 6 GHz Bandwidth§ 10 dBm Output power§ Transmit and receive signal separation on-chip§ Current supply 200mA @ 2V
Outline:
§mHEMT
§MMICs
§Modules
§Systems
§Application
Packaging Technologies for Millimeter-Wave Modules
75 - 110 GHzfrequency multiplier-by-6
W-band 4-channelheterodyne receiver
on-board patch antenna94 GHz FMCW radar 300 GHz amplifier
§ Batch production of RF modules for partners (e.g. ESG)
W-Band Power Amplifier Module
3) Waveguide to MPA transition5) PA MMIC6) MPA MMIC11) Quartz microstrip line12) Quartz bias sub-mount PA13) Quartz bias sub-mount MPA
DC supplyM8 connector
WR-10out
W-Band HPA Module Measurements
Modules with Integrated Antennas
220 240 260 280 300 320-30-20-10
0102030
S-Pa
ram
eter
s [d
B]
Frequency [GHz]
S21
S11
S22
§ Integrated Antennas (laser structured) on GaAs substrate§ Chip size 0,5 × 1,2 mm2
§ Maximum gain 21 dB @ 300 GHz§ Gain > 14 dB (220 - 320 GHz)
S-Par
amet
er [
dB]
Frequenz [GHz]
Outline:
§mHEMT
§MMICs
§Modules
§Systems
§Application
220 GHz Wireless Communication: >25 Gbit/s Data Link
World record wireless data rate
20 m 10 m
NRZ-OOK PRBS
§ 30 Gbit/s data transmission demonstrated(DVD in 1.25 sec, 2307 TV channels, 1875 × DSL16000)
Cryo LNAs for Allen Telescope Array
§ Integrated antenna frontend and
cryogenic cooling system
§ Operating temperature ~ 60 K
§ Balanced 0.5...12 GHz LNA
§ Processing 100 nm mHEMT: IAF
§ Design: Low Noise Factory (Sweden)
§ Packaging: Low Noise Factory
Allen Telescope Array Hat Creek, Cal.
Cryogenic mHEMT
0 50 100 150 200 250 3005060708090
100110120130140150
0
50
100
150
200
250
300
350
400
450
RC
onta
ct (m
m
m),
RSh
eet (
/sqr
)
Temperature
RContact
RSheet
RG
ate
(/m
m)RGate• 100 nm mHEMT devices
• reduced gate resistance
• reduced sheet resistance
• slightly increased contact resistance
Cryogenic 16 – 26 GHz LNA
15 16 17 18 19 20 21 22 23 24 25 26 270
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
Noi
se T
empe
ratu
re (K
)
Frequency (GHz)
Gai
n (d
B)
Gain
Noise
T = 20 K• Hybrid 3-stage 16 – 26 GHz LNA
(Yebes)
• first stage 100 nm 4 x 40 µm mHEMT
• noise temperature comparable with
InP
• 12 K Noise temperature @ 22 GHz
Cryogenic 4 – 8 GHz LNA
3 4 5 6 7 8 90123456789
10
0
5
10
15
20
25
30
35
40
Noi
se T
empe
ratu
re (K
)
Frequency (GHz)
Gai
n (d
B)
T = 10 K
Gain
Noise• Hybrid 4 – 8 GHz LNA (Chalmers)
• first stage 100 nm 4 x 40 µm mHEMT
• 3 K noise temperature @ 5 GHz
Allen Telescope Array
Source: MTT-S 2005 WorkshopVery Large Microwave Arrays for Radio Astronomy and Space Communications
• Project of SETI Institute and UC Berkeley
• Location: Hat Creek, California
• Design: 350 antennas with 6.1m
Outline:
§mHEMT
§MMICs
§Modules
§Systems
§Application
Millimeter-Wave Integrated Circuits Enable Innovative Applications
Life sciencesClimate research
Earth observationCommunication
Security and safety