mos transistor tranzystor mos -...
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MOS transistor
Tranzystor MOS
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27 stycznia 2014 Wojciech Kucewicz 3
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B.Razavi –Fundamentals of Microelectronics
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𝑉𝑜𝑢𝑡𝑉𝑖𝑛
=𝑅1
𝑅1 + 𝑅𝑀
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)(THGSox
VVWCQ
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THGSox
VxVVWCxQ )()(
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vQI
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19
L
WC oxn
2)(
)(
)()(
2
0
)(
0)(
DSDSTHGSoxnD
THGS
Lx
x
VxV
xV oxnD
nTHGSoxD
nn
VVVV
L
WCI
dVVxVVWCdxI
dx
xdVVxVVWCI
dx
dVE
DS
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2
max, THGSDVVI
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Linear Resistance
At small VDS, the transistor can be viewed as a resistor, with the resistance depending on the gate voltage.
It finds application as an electronic switch.
THGSoxn
on
VVL
WC
R
1
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if VDS << 2(VGS − VTH)
2
)(2DS
DSTHGSoxnD
VVVV
L
WCI X
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Application of Electronic Switches
In a cordless telephone system in which a single antenna is used for
both transmission and reception, a switch is used to connect either the
receiver or transmitter to the antenna.
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Effects of On-Resistance B.Razavi –Fundamentals of Microelectronics
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In the cordless phone, the switch connecting the transmitter to the antenna must negligibly attenuate the signal, e.g., by no more than 10%. If VDD = 1.8V, μnCox = 100 μA/V2, and VTH = 0.4 V, determine the minimum required aspect ratio of the switch. Assume the antenna can be modeled as a 50W resistor.
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Effects of On-Resistance
Assuming minimal lenght of the channel L = 90 nm, W = 115µm
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1276
1
6,59,0
W
L
W
VVL
WC
R
RRR
R
V
V
THGSoxn
on
on
onant
ant
in
out
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Effects of On-Resistance
To minimize signal attenuation, Ron of the switch has to be as small as possible. This means larger W/L aspect ratio and greater VGS.
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2
1
0
)(
0)(
)(2
1
)(1
THGSoxnD
THGS
Lx
x
VVxV
xV oxnD
VVL
WCI
dVVxVVWCdxITHGS
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Triode or Saturation?
When the region of operation is not known, a region is assumed (with an
intelligent guess). Then, the final answer is checked against the
assumption.
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Triode or Saturation?
Calculate the bias current of M1. Assume μnCox = 100 μA/V2 and VTH =
0.4 V. If the gate voltage increases by 10 mV, what is the change in the
drain voltage?
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VIRVV
AVVL
WCI
DDDDx
THGSoxnD
8,0
200)(2
1 2
VV
AI
x
D
766,0
7,206
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DSTHGSoxnD VVVL
WCI 1
2
1 2
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and L
The channel length modulation factor can be controlled by the circuit designer.
For long L, the channel-length modulation effect is less than that of short L.
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How drain voltage afects drain current?
A MOSFET carries a drain current of 1 mA with VDS = 0.5 V in saturation. Determine the change in ID if VDS rises to 1V and λ = 0.1V−1.
What is the device output impedance?
mAV
VII
VVVL
WCI
VVVL
WCI
DS
DSDD
DSTHGSoxnD
DSTHGSoxnD
048,11
1
12
1
12
1
1
212
2
2
2
1
2
1
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The change in ID is 48 µA (<5%). The device output impedance:
W
k
I
Vr
D
DSo 42,10
000048,0
5,0
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Transconductance
As a voltage-controlled current source, a MOS transistor can be characterized by its transconductance:
GS
Dm
V
Ig
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This quantity serves as a measure of the “strength” of the device: a higher value corresponds to a greater change in the drain current for a given change in VGS.
For saturation region:
1) Derivative 2) VGS – VTH = f(ID) 3) gm/ID
2)(2
1THGSoxnD VV
L
WCI
THGSoxnm VVL
WCg Doxnm I
L
WCg 2
THGS
Dm
VV
Ig
2
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Transconductance
1)
2)
3)
These dependencies prove critical in understanding performance trends of MOS devices.
THGS
mDDmTHGS
THGS
Dm
mDDm
Doxnm
mTHGSTHGSm
THGSoxnm
VVgconstIIgconstVV
VV
Ig
L
WgconstIIgconst
L
W
IL
WCg
L
WgconstVVVVgconst
L
W
VVL
WCg
1;
2
;
2
;
37
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Doubling of gm due to doubling W/L
If W/L is doubled, effectively two equivalent transistors are added in parallel, thus doubling the current (if VGS-VTH is constant) and hence gm.
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2
12
1THDDoxnD
VVVL
WCI
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2
1
2
1
1
THGSoxnDS
Do
VVL
WCV
Ir
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D
oI
r
1
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PMOS Transistor
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2,
2
,
22
1
12
1
DSDSTHGSoxptriD
DSTHGSoxpsatD
VVVVL
WCI
VVVL
WCI
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Small-Signal Model of PMOS Device
The small-signal model of PMOS device is identical to that of NMOS
transistor; therefore, RX equals RY and hence (1/gm)||ro.
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46
D
G
S
D
G
S
B
D
G
S
B
D
G
S
B
D
G
S
D
G
S
B
D
G
S
B
D
G
S
B
D
G
S
D
G
S
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NMOS
47
DSTHGSoxnD
THGSDS
DSDSTHGSoxnD
THGSDS
VVVL
WCI
VVV
VVVV
L
WCI
VVV
12
1
2)(
2
2
D
oI
r
1 THGSoxnm VV
L
WCg
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PMOS
48
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12
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B.Razavi –Fundamentals of Microelectronics
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