40 um

Grin size: 4.5 um Line width: 5 um

(a) (b)

(c) (d)

Photolithography

(a) Incomplete pattern on the wafer with delamination of the photoresist films (S1813)

(b) A triangular dot pattern with a dot-to-dot size of 40 um

(c) A hexagonal grid pattern with a grin size of 4.5 um

(d) A square grid pattern with a line width of 5 um

Synthesis and Characterization of Silica Nanoparticles 49

4

504

514

524

534

544

554

564

574

584

594

604

614

624

634

644

654

664

674

6840

2468

1012141618

Particle Size (nm)

Num

ber

Fig 1. SEM image of silica nanoparticles from two sections

Fig 2. Particle size distribution histogram based on SEM data

105.709

141.772

190.137

255.002

341.994999999999

458.666

615.139

824.992

1106.435

1483.893

1990.119

2669.043

3579.581

4800.74605

1015202530

Particle Size (nm)

Inte

nsity

(Per

cent

)

105.709

141.772

190.137

255.002

341.994999999999

458.666

615.139

824.992

1106.435

1483.893

1990.119

2669.043

3579.581

4800.74605

1015202530

Particle Size (nm)

Num

ber (

Perc

ent)

(a)

(b)

Fig 3. Size distribution results by DLS: (a) by intensity; (b) by number

Nanoparticle Assembly and Characterization

(a) (b)

(c)

SEM images of assembled particles in (a) cross-section view; (b) Top view. Showing ordered close packed structure over long ranges with some cracks & defects.

The transmission spectra at normal incidence and angle resolved reflection spectra with incident angle from 5° to 40° at 5° increment are shown in (c), showing blue shift phenomenon of the maximum intensity point.