応用物理学会 · 2013. 5. 7. · emn=1v/m g 6 it, 290 u — 7' z x 60 *fib d eo (fj 1 mm)...

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Page 1: 応用物理学会 · 2013. 5. 7. · Emn=1V/m g 6 It, 290 u — 7' Z X 60 *fib D EO (FJ 1 mm) 33 (2004) 3. (a ... "Picosecond optoelectronic switching and gating in silicon," Appl
Page 2: 応用物理学会 · 2013. 5. 7. · Emn=1V/m g 6 It, 290 u — 7' Z X 60 *fib D EO (FJ 1 mm) 33 (2004) 3. (a ... "Picosecond optoelectronic switching and gating in silicon," Appl
Page 3: 応用物理学会 · 2013. 5. 7. · Emn=1V/m g 6 It, 290 u — 7' Z X 60 *fib D EO (FJ 1 mm) 33 (2004) 3. (a ... "Picosecond optoelectronic switching and gating in silicon," Appl
Page 4: 応用物理学会 · 2013. 5. 7. · Emn=1V/m g 6 It, 290 u — 7' Z X 60 *fib D EO (FJ 1 mm) 33 (2004) 3. (a ... "Picosecond optoelectronic switching and gating in silicon," Appl
Page 5: 応用物理学会 · 2013. 5. 7. · Emn=1V/m g 6 It, 290 u — 7' Z X 60 *fib D EO (FJ 1 mm) 33 (2004) 3. (a ... "Picosecond optoelectronic switching and gating in silicon," Appl
Page 6: 応用物理学会 · 2013. 5. 7. · Emn=1V/m g 6 It, 290 u — 7' Z X 60 *fib D EO (FJ 1 mm) 33 (2004) 3. (a ... "Picosecond optoelectronic switching and gating in silicon," Appl
Page 7: 応用物理学会 · 2013. 5. 7. · Emn=1V/m g 6 It, 290 u — 7' Z X 60 *fib D EO (FJ 1 mm) 33 (2004) 3. (a ... "Picosecond optoelectronic switching and gating in silicon," Appl