pangkimpeck fyp
TRANSCRIPT
-
7/31/2019 PangKimPeck FYP
1/116
i
SCHOOL OF SCIENCE AND TECHNOLOGY
EENNGG 449999CAPSTONE PROJECT
RF filter for millimeter-wave System-on-package SOP using Low-Temperature Co-
fired Ceramic LTCC
PREPARED BY : Pang Kim Peck
STUDENT PI : W0604230
SUPERVISOR : DR LUM KUM MENG
-
7/31/2019 PangKimPeck FYP
2/116
i
Abstract
This paper presents the ability to produce a compact stripline parallel coupled bandpass filter.
With the inclusion of parasitic elements on a multilayer LTCC substrate, the unique properties
effectively function as a divider in the filter which increased the coupling between adjacent
parallel lines, thus resulting in a compact and low loss filter. The process of fabrication is done
by using four layers of a 50-m LTCC substrate in with a build in filter area of just 1.6 mm by
0.66 mm.
A center frequency of 61.81 GHz is obtained by using a fabricated prototype three-pole bandpass
filter chip. This chip comes with a bandwidth of 6.23 %, and an insertion loss of -0.5 dB that
includes input and output transitions. Most importantly, the return losses are below -20 dB in the
pass.
Being equipped with its smallest size package, this fabricated bandpass filter shall be in the top
records with the highest V-band filters which can be easily integrated into the millimeter-wave
LTCC system-on-package.
The proposed 1.5GHz integrated parallel-coupled bandpass filter (BPF) with parasitic element
(RLC) on a multi-layer LTCC substrate (Dupont 951) is designed using Agilent Advanced
Design System (ADS) Software. The substrate of the band-pass filter is replaced by using FR4
substrate so as to achieve a resonant frequency of 1.5GHz due to budget constraint and limitation
of testing equipment available in the school premise. The fabrication of the band-pass filter
includes using Organic Solderability Preservative (OSP) and Hot Air Solder Leveling (HASL)
finishes.
Using the ideal simulated results comparing with the actual prototypes, the return loss shows a
drastic drop using HASL coating method of -24.085dB and a gain on the insertion loss of -
11.835dB. While using the OSP coating method, the return loss has a slight increase of -2.871dB
as compared to HASL method and a great decrease on the insertion loss of -9.7197dB.
-
7/31/2019 PangKimPeck FYP
3/116
ii
Acknowledgment
During this full semester year of working on this project, I have consciously and subconsciously
picked up electronic engineering knowledge through lectures, research papers, books and
relevant materials hence enabled me to develop an understanding of the subject from initial to
the final level.
As for here, I would like to take this opportunity to express my deepest appreciation and
heartfelt gratitude to my mentor Dr. Lum Kum Meng, lecturer of SIM University, for his kind
assistance, encouragement and guidance rendered throughout the course of my final year
project. Without his untiring effort, commitment and expertise in this field, this project would
not have been possible.
Lastly, I would also like to thank my family, beloved wife, daughter and friends for their
manual support, strength, and help for everything during these periods of time.
-
7/31/2019 PangKimPeck FYP
4/116
iii
Contents
Abstract ......................................................................................................................................................... i
Acknowledgment ......................................................................................................................................... ii
Contents ....................................................................................................................................................... iii
Table of Figures ........................................................................................................................................... v
List of Table ................................................................................................................................................ vi
1. Chapter 1 - Introduction ....................................................................................................................... 1
1.1 Problem description ..................................................................................................................... 1
1.2 Overall view of the project .......................................................................................................... 1
1.3 Project Management .................................................................................................................... 2
1.4 Project PlanningGantt Chart.................................................................................................... 6
1.5 Design Process Flow-Charts ....................................................................................................... 7
2. Chapter 2 - Literature Review ................................................................................................................. 82.1 Filters .................................................................................................................................................. 8
2.2 System-On-Package (SOP) ............................................................................................................. 11
2.3 LTCC Hardware Component .......................................................................................................... 14
2.4 FR4 material ..................................................................................................................................... 15
2.5 Organic Solderability Preservative (OSP) ...................................................................................... 18
2.6 Hot Air Solder Level (HASL) ......................................................................................................... 19
2.7 SMA connectors ............................................................................................................................... 21
2.8 Microstrip Lines ............................................................................................................................... 222.8.1 Microstrip Structure .................................................................................................................. 22
2.8.2 Waves in Microstrips ................................................................................................................ 22
2.8.3 Quasi-TEM Approximation ...................................................................................................... 23
2.8.4 Effective Dielectric Constant and Characteristic Impedance .............................................. 23
i.Guided Wavelength ................................................................................................................. 24
ii.Effect of Strip Thickness ......................................................................................................... 24
2.9 Coupled Lines .................................................................................................................................. 25
2.9.1 Even- and Odd-Mode Capacitances ........................................................................................ 252.10 Other types of Microstrip Lines ................................................................................................ 26
2.11 Network Analysis ...................................................................................................................... 26
2.12 Selection of software simulation tool ............................................................................................ 29
2.12.1 Features of ADS Momentum .................................................................................................. 30
3. Chapter 3 - Design Methodology ..................................................................................................... 31
-
7/31/2019 PangKimPeck FYP
5/116
iv
3.1 Microstrip width and length calculation (Validation) ............................................................. 31
3.1.1 LTCC Microstrip width calculation (LineCal) .................................................................... 32
3.1.2 FR4 Microstrip width calculation (LineCal) ....................................................................... 35
3.1.3 LTCC Microstrip length selection calculation ..................................................................... 36
3.1.4 FR4 Microstrip length selection calculation ......................................................................... 37
3.2 Spacing Selection ....................................................................................................................... 38
3.2.1 Coupled strip-line LTCC filter with and without parasitic element .................................... 38
3.2.2 Single strip-line FR4 designed filter with and without parasitic element ........................... 39
4 Chapter 4 - Design Layout On Bandpass Filter ............................................................................... 40
4.1 LTCC BPF Filter with Parasitic Element ................................................................................. 40
4.2 LTCC BPF Filter without Parasitic Element ............................................................................ 40
4.3 Design layout of FR4 BPF Filter without Parasitic Element ................................................. 41
4.4 Design Layout of FR4 Parasitic Element ................................................................................ 415 Simulation Results .............................................................................................................................. 42
5.1 Simulation Setup ........................................................................................................................ 42
5.2 Simulation Results ..................................................................................................................... 43
5.2.1 LTCC Band-pass Filter (with parasitic element) Insertion Loss, Return Loss and Center
Frequency ............................................................................................................................................ 44
5.2.2 LTCC Band-Pass filter (with parasitic element) simulated Bandwidth .............................. 45
5.2.3 LTCC (without parasitic element) Insertion Loss, Return Loss and Center Frequency .... 46
5.2.4 LTCC Band-Pass filter (without parasitic element) simulated Bandwidth ......................... 47
5.2.5 FR4 Band-pass Filter (with parasitic element) Insertion Loss, Return Loss and CenterFrequency ............................................................................................................................................ 48
5.2.6 FR4 Band-Pass filter (with parasitic element) simulated Bandwidth ................................. 49
5.2.7 FR4 Band-pass Filter (without parasitic element) Insertion Loss, Return Loss and Center
Frequency ............................................................................................................................................ 50
5.2.8 FR4 Band-Pass filter (without parasitic element) simulated Bandwidth ............................ 51
5.2.9 LTCC Parasitic Element Performance .................................................................................. 52
5.2.10 FR4 Parasitic Element Performance ................................................................................. 53
5.3 Simulation Comparison ............................................................................................................. 545.3.1 Design strip-line parallel-coupled LTCC BPF Comparison ................................................ 54
5.3.2 Design strip-line parallel-coupled FR4 BPF Comparison ................................................... 55
6 Chapter 6 - Design Fabrication ......................................................................................................... 56
7 Chapter 7 - Evaluation Tests ............................................................................................................. 59
7.1 Setup on test equipment ............................................................................................................. 59
-
7/31/2019 PangKimPeck FYP
6/116
v
7.2 Actual Test Result ...................................................................................................................... 61
7.2.1 FR4 (HASL) BPF generated results ..................................................................................... 61
7.2.2 FR4 (OSP) BPF generated results ......................................................................................... 62
7.3 Comparison of prototypes and simulated results ..................................................................... 64
8 Chapter 8 - Conclusion ...................................................................................................................... 65
9 Chapter 9 - Suggestion for future works ............................................................................................ 66
10 Reference ........................................................................................................................................ 67
11 Appendix ........................................................................................................................................ 68
Table of Figures
Figure 1: Compact stripline parallel coupled bandpass filter .................................................................... 8
Figure 2: System-On-Package .................................................................................................................. 11
Figure 3: Micro-Strip Structure ................................................................................................................. 22
Figure 4: Cross section of coupled microstrip line ................................................................................... 25
Figure 5: Quasi-TEM modes of a pair of coupled microstrip lines: Even and Odd mode .................... 26
Figure 6: Two-port network showing network variables ......................................................................... 27
Figure 7: Screen shot for ADS lineCal using LTCC material ................................................................. 33
Figure 8: Screen shot for ADS lineCal using FR4 material .................................................................... 35
Figure 9: Parasitic element diagram.......................................................................................................... 38
Figure 10: Final designed layout diagram of BPF filter of LTCC substrate layer at the first and last
sector of the filter top and bottom bonded by parasitic element .............................................................. 40
Figure 11: Final designed BPF filter of LTCC substrate layer and without parasitic element layoutdiagram ....................................................................................................................................................... 40
Figure 12: FR4 final design with parasitic element ................................................................................ 41
Figure 13: FR4 final design without parasitic element ............................................................................ 41
Figure 14: shows the simulated values of the Insertion Loss S(1,1): -30.794dB, Return Loss S(2,1): -
0.611dB and Center Frequency freq: 61.81GHz ...................................................................................... 44
Figure 15: LTCC Band-Pass filter (with parasitic element) simulated Bandwidth ................................ 45
Figure 16: Shows the simulated values of the Insertion Loss S(1,1):-29.742dB, Return Loss S(2,1):-0.695dB and Center Frequency freq: 61.81GHz ...................................................................................... 46
Figure 17: LTCC Band-Pass filter (without parasitic element) final simulated result ........................... 47
Figure 18: Shows the simulated values of the Insertion Loss S(1,1): -45.888dB, Return Loss S(2,1): -
5.434dB and Center Frequency freq: 1.502GHz ...................................................................................... 48
Figure 19: FR4 Band-Pass filter (with parasitic element) final simulated result .................................... 49
-
7/31/2019 PangKimPeck FYP
7/116
vi
Figure 20: Shows the simulated values of the Insertion Loss S(1,1): 25.015dB, Return Loss S(2,1):
5.670dB and Center Frequency freq: 1.535GHz ...................................................................................... 50
Figure 21: FR4 Band-Pass filter (with parasitic element) final simulated result .................................... 51
Figure 22: Arrangement of the 4 layers of FR4 substrate is shown below.56
Figure 23: Design layout versus OSP Coating ......................................................................................... 57Figure 24: Design layout versus HASL Coating ...................................................................................... 58
Figure 25: Photos of the test equipment a) Spectrum Analyzer b) 2m BNC cable c) BNC to spectrum
analyzer d) 50 SMA connector.............................................................................................................. 59
Figure 26: Diagram shows the SMA connectors are soldier on the 3rd layer of the designed FR4 BPF...........60
Figure 27: FR4 (HASL) Test Setup .......................................................................................................... 61
Figure 28: Result on four layer FR4 substrate BPF, 1.59GHz coat with HASL ( 11S :-21.803dB) ...... 61
Figure 29: Result on four layer FR4 substrate BPF, 1.59GHz coat with HASL ( 21S : -17.269dB) ..... 62Figure 30: Four layer FR4 substrate BPF (OSP) Test Setup ................................................................... 62
Figure 31: Result on four layer FR4 substrate BPF, 1.63GHz coat with OSP ( 11S : -24.579dB) ......... 63
Figure 32: Result on four layer FR4 substrate BPF, 1.63GHz coat with OSP ( 21S : -7.5493dB) ......... 63
List of Table
Table 1: Comparison of Traditional and SOP-based Technology .......................................................... 12
Table 2: FR4 Data Sheet............................................................................................................................ 16
Table 3: Process benefits comparison of OSP and HASL ....................................................................... 20
Table 4: Shows a list of values needed to calculate the width. ................................................................ 31
Table 5: Trend chart for LTCC micro-stripline length ............................................................................ 36
Table 6: Trend chart for FR4 micro-stripline length ................................................................................ 37
Table 7: Trend chart for single strip line LTCC filter with and without parasitic element .................... 38
Table 8: Single Strip-line FR4 designed filter with and without parasitic element ................................ 39
Table 9: LTCC Parasitic Element performance ....................................................................................... 52
Table 10: FR4 characteristics versus width of Parasitic Element Performance ..................................... 53
Table 11: Design strip-line parallel-coupled LTCC BPF comparison .................................................... 54
Table 12: S-parameters versus spacing between coupled lines on the FR4 BPF ................................... 55
Table 13: Comparison of prototypes and simulated results ..................................................................... 64
-
7/31/2019 PangKimPeck FYP
8/116
i
1. Chapter 1 - Introduction
In the recent technology policy, strengthening the economy and high demand accelerating the
development of millimeter wave wireless equipment, are solely/highly permitted to the high-speed wireless applications.
There are numerous of benefits by using low temperature co-fired ceramic (LTCC) millimeter-
wave system-on-package (or system-in-package) approach [1]. It is structural compactness, less
spaces required, low cost fabrication, well affordable, excellent performance in transmission
process and finally high-level of integration with associated parasitic elements.
1.1Problem description
In this project, an analytical study is conducted on RF filter for millimeter-wave System-on-
package (SOP) using Low-Temperature Co-fired Ceramic (LTCC) demand for high-speed and
high efficiency wireless in the communication system.
By evaluating the performance of both the high-speed RF filter and LTCC technologies, ADS
software is used. The methods of fabrication of the actual prototypes such as HASL and OSP
are implemented. Using such coating methods will help to achieve improved results as
compared to the simulated results due to the tolerance during the fabrication process and the
elimination of oxidation.
Due to the higher cost of LTCC and limitation of the spectrum analyzer range of up to only
3GHz, another material such as FR4 is selected in this study with a bandwidth of 1.5GHz.
1.2Overall view of the project
There are a total of 8 chapters in this report.
Chapter 1 gives an introduction on the purpose, problem description, overall view of the project.
Mainly highlight the essential elements under the project management.
-
7/31/2019 PangKimPeck FYP
9/116
2
Chapter 2 on Literature Review provides brief introduction on filter, SOP, V-band wireless
system, LTCC technologies, FR4 technologies, OSP, HASL, SMA connector, Microstrip lines
technologies, Network analysis and software simulation tools that are available in the market
today.
Chapter 3 Design Methodology of the microstrip line shows the different design methods of
microstrip line.
Chapter 4 Design Layout on Bandpass filters using two different technologies materials, namely
the LTCC and FR4 material.
Chapter 5 Simulation Result comparisons and conclude on both LTCC and FR4 material.
Chapter 6 Design Fabrication based on FR4 material after evaluating on the simulation results.
Chapter 7 Evaluation Test shall demonstrate the use of the test equipment perform evaluation.
Chapter 8 & 9 shall cover the final conclusion and future works are included to finish the
experiments of this project.
1.3Project Management
The project tasks are divided into various stages. Below shows the Project Plan of each tasks
and Gantt chart respectively:
Task of entire project is divided into several stages:
Stage 1 - Literature reviews related to LTCC technologies
Stage 2 - Design and modeling of RF circuit (V-band with BPF)
Stage 3- Design and modeling of LTCC circuit geometry
Stage 4 - Test and debug LTCC circuit design with ADS tools
Stage 5 - Design Simulation and demonstration
Stage 6 - Overall project evaluation
Stage 7 - Design Enhancement
-
7/31/2019 PangKimPeck FYP
10/116
3
Detail of elaborate and discuss stages is listed below:
Stage 1: Literature reviews related to LTCC technologies
With good understanding of manufacturing multilayer LTCC engineering technology on
wireless system, it allows the possibility of exploring new technology theory and practically to
obtain an optimal performance, compactness and low cost end product.
Integrated parallel-coupled bandpass filter (BPF) with parasitic element (RLC) on a multi-layer
LTCC substrate is important step in this project.
After comprehend on the extensive advantages, knowledge have been expanded and ability in
apprehend clearly on future advance wireless applications.
Research to be done:
I History and applications of LTCC technology
II V-band BPF wireless system performance and operation specification
III Modeling and demonstrate on software Tools with ADS
-
7/31/2019 PangKimPeck FYP
11/116
4
Stage 2: Design and Modeling of RF circuit (V-band BPF)
To evaluate the design performances, the below parameters are essential elements to incorporate
into the project.
i. Bandwidth selection (V band selected)
ii. Insertion/return loss
iii. Analyze signal pulse
iv. Evaluate signal distorted
v. Signal Fading
Stage 3: Design and modeling on LTCC circuit geometry
Design a LTCC module with highly integrated multi-function circuits, consists of MMICs,
filters and antenna where these design specification serves as input to the next stage of the
model performance. Emphasis shall be focused on the final design to be created.
Stage 4: Test and debug design with ADS tools
With the help of the ADS tools, testing and debug procedure is necessary for development
process so as to ensure that the applicant can perform within its desired specification. In
addition, testing also helps to determine the actual results versus the expected results.
Stage 5: Design Simulation and demonstration
System simulation and demonstration is then carried out to ensure that the module tested is well
coordinated. Final system carries out check on design completeness and robustness.
Stage 6: Overall project evaluation
During this stage of the project, all modules that are evaluated in the former stages are
integrated together as the completed design. Once the system testing is completed, the prototype
is ready for delivery to the users.
-
7/31/2019 PangKimPeck FYP
12/116
5
Stage 7: Design Enhancement
In this stage, Design and development process of the LTCC substrate project has finally come to
an end after evaluation. Listed below are some possible recommendations areas that may be use
for the design enhancement listed:
Improve signal gain on filter
Minimize insertion/return loss
Alternative material for design fabrication
-
7/31/2019 PangKimPeck FYP
13/116
6
1.4Project PlanningGantt Chart
Involves using Gantt Chart to update and track project schedule based on planned task stated
in the Gantt chart and timeline given. Easy tracking compliance of actual work done against
the planned schedule and knowing the progress of each project tasks.
Project Title RF filter for millimeter-wave System-on-package SOP using Low-Temperature Co-fired Ceramic LTCC
Project Team Pang Kim Peck 06
Project Supervior DR Lum Kum Meng 15
2010
Feb Mar Apr May Jun Jul Aug Sep Oct
1 Stage 1: Literature reviews relate d to LTCC
technologies
2 (i) Review of bandpass filter technology
3 (ii) History and Evolution of LTCC technologies
(SOP)
4 (iii) LTCC t echnology on wireless Applications
5 (iv) LTCC Hardware Component s
6 (v) Require V band wireless System Operating Range
and Performance
7 (vi) Design and demonstrat e LT CC circuit with
Software To ols
8 TMA: Project Propos al
9 Stage 2A: Design and modeling of filter circuit
10 (i),Achieving a good knowledge on RF circuit and
filter design
11 (ii),Achieving a good knowledge on BPFs design
12 Stage 2B: Familiarization and demonstration of
designing Tools (ADS)
13 Stage 3: Modifies and demonstrate with
designed filter
14 Stage 4: Testi ng & Debugging others design
filter (Design material using LTCC & FR4)
15 Stage 5: Sim ulation of Desi gn and fabricate
prototype us ing FR4 material
16 (i) Final product simulate on the filter design (LTCC
& FR4)
17 (ii) Compare and discuss th e simulated & measured
results
18 Stage 6: Project Evaluation
19 Stage 7: Enhancement of Design
20 Final Report Writing
21 Review & Amendmen t of Final Report
22 Presentation / Demo
Start Date
Target Comple tion Date
S/NTask
-
7/31/2019 PangKimPeck FYP
14/116
7
1.5Design Process Flow-Charts
Flow 1: Design Process Flow
Selection on bandwidth range of filter
Selection on material use
Selection on filter and specification
Execute simulation
Achieve
Design
Objective?
Hardware fabrication
Perform comparison between measurement result and simulation
result
Fabricated prototype is
ready for implement
Achieve
prototype
Objective?
Modification on
design specification
-
7/31/2019 PangKimPeck FYP
15/116
8
2. Chapter 2 - Literature Review
2.1 Filters
Filters have an important role not only in the advance of engineering and science but also in
many modern of RF/microwave applications. Advancement the emerging technology
applications such as wireless communications, continue substantially challenges the
RF/microwave filters. There is a need for control requirements like excellent performance,
minimize the essential in sizes, lighter weight, and lastly the good organization of cost.
Figure 1: Compact stripline parallel coupled bandpass filter
Therefore, strengthening the economy and high demand accelerating the development of
millimeter wave wireless equipment, are solely/highly recommended for the high speed wireless
application. Further to the technologies of novel unit materials and fabrication process.
Whereby, including the technologies like:
i. High-Temperature-Superconductors (HTS)
ii. Low-Temperature Co-fired Ceramics (LTCC)
iii. Monolithic Microwave Integrated Circuit (MMIC)
iv. Micro-electromechanic System (MEMS)
With a good understanding of the RF engineering technologies, enlighten the rapid evolution of
future microstrip and other filter for RF/microwave application.
50 m
50 m
50 m
50 m
-
7/31/2019 PangKimPeck FYP
16/116
9
This project looks into how computer-aided design (CAD) can be of a tool in the full-wave
electromagnetic (EM) simulators, clinically importance of evaluating the revolutionized RF filter
design.
In order the microstrip filters with matching filtering characteristics to obtain optimal
performance in the RF/Microwave Applications. Furthermore, Miniaturization filters
configuration provides the advanced filtering characteristics, with the platform of technologies,
advanced materials and the purpose of software design tools.
The electromagnetic waves compose with frequencies ranging from 300 MHz up to 300 GHz is
known by the term of microwaves or millimeter waves due to the wavelengths range. For the
applications likes communications, radar, navigation, medical instrumentation, and many others
parts of the industrial.
Looking at the research and development, choice of selecting the particular components always
relied on the market requirement. Both fabrication techniques and operating frequency is the
main dependant of designing the filters.
A short and briefly described as follows:
Firstly, it is a must to understand the designer points of view. Look into advantages like
miniaturization in size, low cost, robust and wide-band or various in band characteristics. Hence,
the design should always comprise of size reduction, integrated element like filters etc,
developing the realization of monolithic microwave integrated circuits (MMIC). With the
emerging fabrication techniques, implementing of the lumped elements will finally allow even
comprehensive wavelength of millimeter-wave.
Things ought to consider when lumped elements are present in the microwave frequencies: the
overall length of the lumped elements, the inductor or capacitor must present only a smaller
fraction in particular wavelength.
In most cases, it is difficult to truly realize the lumped elements, due to other parasitics
integration. Forming shunt capacitance again on the ground plane which will considerably
affecting the performance of the respective inductor.
-
7/31/2019 PangKimPeck FYP
17/116
10
In design stage, lumped elements are over the entire operating frequencies band. By using the
full-wave EM simulation is able to into account of the all the parasitic and various kinds of
effects caused.
Choice of filters, band-pass filter (BPF) consists of parasitic elements is strongly integrated on
multilayer strongly bounded LTCC substrate provides compactness and performance required.
Conventional integrated band-pass filter (BPF) structural huge, implement in complex transitions
furthermore is not fable to cost.
Planar Type Filters operate with huge patch resonators therefore the structure of build up area is
eventually huge. The formation of the substrates is normally thick and emphasize on design procedure
is surely complex [2],[7].
Waveguide Type Filters construct with many vias and via fences also require huge areas and have
level of difficulty connecting the microstrip lines or coplanar waveguides [3-6].
The function of the RF filter is a device that allows attenuation and transmission of the selected range
of frequencies. RF filters likes high pass, low pass, band pass and band reject filter and many other
filters are commonly used in the industrial.
-
7/31/2019 PangKimPeck FYP
18/116
11
2.2 System-On-Package (SOP)
The technologies of SOP have been widely use in almost two decades for the miniaturization
technology, support most of the electronic and bio-systems of feature from a thousand to a
million. Promoting the invention of System Integration Law is well known the Second Law of
Electronics working on the miniaturization of the whole system.
Potential of integrated circuits also known as Moores Law plays an important role in the
miniature portion of the system. In order to facilitate the miniaturization of SOP system and
further allow the more system function implementation enables. Therefore, entail the provision
of SOP in the new generation in electronics communication, bio, healthcare and automotive
industries.
Figure 2: System-On-Package
SYS-ON-CHIP (SOC)
BIO-SENSORSTHERMAL SOP STACKED ICs
& PACKAGES
(SIP)
MIXED SIGNAL SOP
DESIGN
SOP ELECTRICAL MIXED SIGNAL
RELIABILTY
RF
-
7/31/2019 PangKimPeck FYP
19/116
12
In todays market economics and microsystem technologies correspond to the primary drivers of
information age. Size of microelectronics with integrated technology of giga-scale, wireless
communication system devices in gigabit, terabit optoelectronics, even in motorization from
micro to nano size, and many others medical implants system too, which are all integrated
technology idea of leading to the ultra miniaturization formation.
The traditionally separated areas of between System-on-package (SOP) and the System-on-chip
(SOC) technology, one is at the integrated circuit (IC) stage, second stacked ICs and lastly is
allot at System-in-package (SIP) stage, despite the emphasis on manufacturing stacked of ICs
and packages. Therefore, system technology of SOP consists of the SOC and SIP thermal feature
and sometime even inclusive of the batteries too. Thus, SOP resulting in the interaction, needs
and device emerging in miniaturized into a solo system package.
Multi-layer ceramic and organic-based SOP implementation are capable of overcoming this
limitation by integrating components as part of the module package that would have otherwise
been acquired in discrete form. On-package components not only miniaturize the module, but
also eliminate or minimize the need for discrete components and thereby reduce the assembly
time and cost.
Table 1: Comparison of Traditional and SOP-based Technology
Building
Blocks Traditional Technology
SOP-based
Technology
Power sources DC adapter, power cables,power socket
Embedded thin-filmbatteries micro-fluidic
batteries
Integrated circuits Logic, memory, graphics,control, and other ICs,
SOCs
Embedded and thinned ICsin substrate
Stacked ICs in 3D/
Packages ICs in 3D
SIP with wire bond and flip
chip
Wire-bonded and flip-chip
SIPs. Through silicon via
(TSV) SIPs and substrates
Packages or substrates Multilayer organicsubstrates
Multilayer organic andsilicon substrates with TSVs
-
7/31/2019 PangKimPeck FYP
20/116
13
Passive components Discrete passive
components on printed
circuit board (PSB)
Thin-film embedded
passives in organics, silicon
wafer and Si substrate
Heat removal elements Bulky heat sinks and heat
spreaders. Bulky fans forconvection cooling
Advanced nano-thermal
interface materials, nano-heat sinks and heat
spreaders, thin-film
thermoelectric coolers,micro-fluidic channel based
heat exchangers
System board PCB-based motherboard Package and PCB are
merged into the SOP
substrate
Connectors/ sockets USB port, serial port,
parallel port, slots (for dualin-line memory modules(DIMM) and expansion
cards)
Ultrahigh density I/O
interfaces
Sensors Discrete sensors on PCB Integrated nano-sensors in
IC and SOP substrate
IC-to -package
interconnections
Flip chip, wire bond Ultra miniaturized nano-
scale interconnections
Packages wiring Coarse wiring Line
width:25m
Pitch:75m
Ultrafine pitch, wiring in
low-loss dielectrics Line
width: 2-5m
Pitch: 10-20m
Package-to boardinterconnects
Ball grid array (BGA)bumps, tape automated
bonding (TAB)
None
Board wiring Very coarse-pitched wiring
(line width/ spacing:100-200m)
No PCB wiring. Package
and PCB are merged into theSOP substrate with ultrafine
pitch wiring
-
7/31/2019 PangKimPeck FYP
21/116
14
V-band Wireless System
To overcome the achievement of high transmission rates and wider bandwidths, choice of selecting
the appropriate band selection is essentially important. By selecting V- band will eventually provide
the above requirements. Operating range of V-band is (50 GHz to 75GHz) whereby is way above the
1Gbps.
2.3LTCC Hardware Component
Material of Low Temperature Co-fired Ceramic (LTCC) is an acronym made of glass ceramic
composite. Specimens structural is pre-processing with multi-layers green-sheet laminated with
required circuits printed. Each laminated layer thickness come with a minimum thickness of 50m
(equivalent to 1.8 mils) is possible. Aim of impedance control and excellent packaging solution
liability is able to command in an LTCC substrate by configuring with the Cavities process. Due to its
unique performance capability, the high-frequency RF circuitry and microwave applications are
widely used in wireless and satellite industries.
The laminates were stacked in various composite (likes resister, capacitors, inductors and passive
components), with single fired process. Create conduction between laminated layers, were subject to
inductive and capacitive, by using the element with strip-line interconnects and ground planes. Those
Passive components embedded between LTCC multi-layers, achieve interconnecting length
minimization, improving, to provide dense integration and structural robustness, and less circuit
geometry is obtained. As the result, relevant levels of quality and high reliability are been resolved.
Highly conductive material (Silver, copper and gold) is used, because of the firing temperature 60
Dimensional Stability, E-2/150
< 0.04% Warp/fill
< 1.00% Bow / Twist
Flammability, Classification UL94 V0
Water Absorption E-1 / 105 0.10%
Peel Strength After Thermal Street 11 lb. in After 10s /288 Deg.C
Flexural Strength
100,000 lbf / in2 Lengthwise
75,000 lbf /in2 Crosswise
Resistivity After Damp Heat Volume 10^8 M ohms cm
Resistivity After Damp Heat Surface 10^8 M ohms
Dielectric Breakdown. Parallel to laminate > 60KV
Dielectric Constant @ 1MHz 4.7
Dissipation Factor @ 1 MHz 0.014
Q-Resonance @ 1 MHz > 75
-
7/31/2019 PangKimPeck FYP
24/116
17
Q-Resonance @ 50 MHz > 95
Arc Resistance 125 s
Glass Transition Temperature 135 Deg. C
Temperature Index 130 Deg. C
A few other relevant facts from other sources
Specific Gravity 1.81.9
Rockwell Hardness (M scale) 110
-
7/31/2019 PangKimPeck FYP
25/116
18
2.5 Organic Solderability Preservative (OSP)
OSP are the most widely used coating material in the lead-free soldering, due to the excellent
solderability performances, easy processing method as well as its low cost. An anti-oxidant film
applies on the exposed copper surfaces that established a reaction with copper producing a formof organometallic layer known as the Organic Solderability Preservative. The coating form
invisible capability, with a thickness of 0.1 to 0.5 microns thin layer on the copper surface. OSP
shelf life could last for six months as compare with other solder masks.
The flow diagram below presents the sequence of steps of the typical OSP process. A brief
description of each process steps are as the following diagram flow:
Flow 2: OSP Process Flow
Solders mask residues and surface oil on theexposed copper surfaces is remove with acidiccleaner
Etching removes any contaminants and chemicallyroughen copper surface with microetch solution
Eliminate excess solution and limit oxidationconfiguration on the copper surface
Chemically bonds protective layers, forming asolderability preservative organometallic layer on thecopper surface
Treating the OSP coat with warm-air and at the sametimes remove unwanted residual moisture from therespective board
Help to even coating across the surface of the entirePrinted Wired Board (PWB)
ACID CLEANING
MICROETCH
AIR KNIFE
OSP
AIR KNIFE
DRY
-
7/31/2019 PangKimPeck FYP
26/116
19
2.6 Hot Air Solder Level (HASL)
A process step during manufacturing of HASL consists of the following, pre-clean, fluxing, hot
air leveling, and a post-clean.
1. Pre-cleaning is simultaneously done with a micro-etch2. Fluxes comprise with the following function:
Allowing a thin layer of oxidation forming on the preclean surface act as a layer of
protective function.
Heat dissipation during solder immersion.
It enhances oxidation protection during the process of HASL.
In order to achieve balance flux, that liaise between high and lower viscosity fluxes meaning
better the protection and higher heat transfer. With more effective oxidation protection
collaborator with higher viscosity flux and much even solder leveling. But bad points is, it can
reduce overall heat transfer and require longer dwell time too.
The circuit board rapidly past jets of hot air. Reasons to adopting this procedure allow solder tocoat on the exposed copper and solder-free for the masked areas.
In this stage, all the embedded impurities are easily remove by using the method of drossing,
with the help of the hot air leveler. Final stage is to pre-clean using the acid solution
Flow 3: HASL Process Flow
Solder
Air Knife
Post-clean
Dry
Preclean
Flux
-
7/31/2019 PangKimPeck FYP
27/116
20
Table 3: Process benefits comparison of OSP and HASL
Description OSP HASL
Surface Thickness
Uniformity
Good Poor
Pad Coplanarity Good Poor
Finished Hole Size
Uniformity
Good Poor
Plated Hole Size
Compensation (design)
Not Required 0.0002-0.0003in oversized
Fine Pitch Quality(25mils or less)
Good Poor
Surface Contrast
(Assembly)
Good Poor
Solder Volume Predictable
(design for)
Varies
SIR, bare board Excellent Acceptable
Environmental Hazard Low High
Personnel Exposure
(safety issue)
Low High
Gold Contact Masking Not required Required
Thermal Stress (PCB
manufacturing process)
No Yes
Manufacturing Cost Low High
Equipment Maintenance
Cost
Low High
Rework ability Easy Difficult
Surface Finish
Durability
Fragile Robust
-
7/31/2019 PangKimPeck FYP
28/116
21
2.7 SMA connectors
Namely, SubMiniature Version A in short known as SMA connectors, it offers great distinctive
advantages providing continuous DC electrical performance conjunction with flexible cables
with extension to 12.4GHz.
The SMA connectors coupling appearance is screw-type. Moreover, the most notable being in
impedance constant at 50 ohms and low reflection performance during the broad band condition.
Thus, with the plus point of properties, low voltage standing wave ratio (VSWR) and signal
attenuation is minimal, that make SMA connectors a most popular core in the microwave
community.
-
7/31/2019 PangKimPeck FYP
29/116
22
2.8 Microstrip Lines
2.8.1 Microstrip Structure
Major structure of a microstrip consists of the following subsystem:
1. Width of the conducting microstrip, W
2. Thickness of the microstrip, t, which located just on top of the dielectric substrate
3. Relative dielectric constant r ,with the thickness height h
4. Lastly, the dielectric substrate is connected to the ground plane
Figure 3: Micro-Strip Structure
2.8.2 Waves in Microstrips
The microstrip is made up of inhomogeneous physical structure that consists of two media: the
dielectric below and air located above the structure.
Due to the inhomogeneous formation, it caused the microstrip not in the favour to the pure TEM
wave. Furthermore, the transverse components will only present in the pure TEM wave and also
derive as propagation velocity dependent on material properties represent by the permeability o and
permittivity r .
Air and dielectric substrate play an importance role in the guided-wave media, eliminating the
magnetic and electric fields in the microstrip line waves. Moreover, propagation velocities not just
depend on the material properties but also the microstrip physical dimension.
Groundplane
ConductingStrip
Dielectricsubstrate
W
h
t
r
-
7/31/2019 PangKimPeck FYP
30/116
23
2.8.3 Quasi-TEM Approximation
The of the longitudinal components of the fields for the dominant mode of a microstrip line may be
ignored due to the smaller field area comparing to the transverse components.
With that, not only the dominant mode act like the TEM mode, even the TEM transmission line
theory is applicable to the microstrip line.
For quasi-TEM approximation, it can be applied over almost all the operating frequency ranges of
microstrip
2.8.4 Effective Dielectric Constant and Characteristic Impedance
By using in the quasi-TEM approximation, corresponding to the effective material of dielectric
permittivity between homogeneous and inhomogeneous of dielectric-air media of the microstrip.
In quasi-static analysis [9], obtaining the characteristics or impedance cZ and effective dielectric
constant re in microstrip are the most important and more efficient parameters in process of
microstrips transmission. In addition, quasi-static analysis provides the systematic mode of
propagation theory of a microstrip condition with the pure TEM. Connected to microstrips
parameters are then determined within the two different requirements of capacitance values are
shown below:
For very thin conductors (ie, t0), the closed-form expressions that provide accuracy better than
one percent are [10] as follows.
For :1h
W
ah
W
W
hrrre 2.4104.0121
2
1
2
1 25.0
bh
W
W
hInZ
re
c 2.425.08
2
-
7/31/2019 PangKimPeck FYP
31/116
24
Where 120 is the wave impedance in free space.
For :1h
W
aW
hrrre
3.41212
1
2
1 5.0
bh
WIn
h
WZ
re
c 3.4444.1677.0393.1
1
i. Guided Wavelength
Furthermore, for a given microstrip, and value of the effective dielectric constant is able to identify,
make easy for calculation of the guided wavelength implementing on the quasi-TEM mode on the
design microstrip is shown as below:
Give the0
been the most accuracy for free space wavelength at the respective operation frequency,
.f
Where, f
co
More conveniently, to facilitate the guided wavelength result in micrometer, with the help of the
respective frequency is given in gigahertz (GHz),
re
g
0
re
gGHzf
c
)(
where c is the velocity of light smc /103
8 in free space.
Therefore, for Quarter wavelength, use4
gl
,
If the design is using a half-wavelength microstrip, then the formula will be using2
gl
,
Therefore, note that guided wavelength play a very important step in designing the microstrip filters.
ii. Effect of Strip Thickness
Usually, effect on conducting strip thickness t is not taken into consideration, due to the thickness
dimension of the thin film conducting layer is very small. In practice, this is often neglected.
-
7/31/2019 PangKimPeck FYP
32/116
25
2.9 Coupled Lines
In the designing stage, using EM simulation in the form of Coupled microstrip lines, are widely used
for implementing microstrip filters. The reason for cross section of the coupled microstrip lines areillustrates in this portion. With the width W are placed in parallel, and through a separation, S
configuration are within the recommend limits as shown in Figure 4. While, relatively result can be
achieved for the two quasi-TEM modes.
Figure 4: Cross section of coupled microstrip line
2.9.1 Even- and Odd-Mode Capacitances
There are two main capacitances, namely the odd mode and even mode. i.e., for an even-mode
excitation, both microstrip line are serve in the identical voltage potentials, under this conditions,
even mode excitation carry both the positive charges moderately.
As Figure 5 shows the mode of the odd event, odd mode excitation establishes an opposite voltage
potential between the two lines up microstrip line or in others word the symmetric plane know as the
electric wall act as a charge, where the sign are in opposite.
Normally, both the odd and even modes will excite at one goal, and the operating propagation in
phase velocities is different, since the desirable of the TEM is not pure. Furthermore, that both modes
are having a different permittivities experience too. Effective of the dielectric constants and the
characteristic impedance are well characterized in the coupled microstrip lines between the odd and
even modes [11].
r
WWS
-
7/31/2019 PangKimPeck FYP
33/116
26
Figure 5: Quasi-TEM modes of a pair of coupled microstrip lines: Even and Odd mode
2.10 Other types of Microstrip Lines
Implementing other types of microstrip line, are normally unclipped for filter applications [12], is a
method of realizing all kind of different filters, impedance in wider range is barely achievable in the
form of lowpass, highpass and even the cascaded formation of wider band bandpass filters.
Understanding the concern of ultra thin dielectric substrates on the low dielectric constant, by this
method dielectric loss will be further reduced. This makes the plus points for developing filters,
potential in micro-machined filters in the unique capabilities for millimeter-wave applications.
2.11 Network Analysis
Filter network plays an important part in microwave engineering industrial and RF sector. The
networks are capable to combine/detach signal and discard/select in numerous frequencies in the
RF/microwave systems and equipment.
Microwave frequencies cannot be measured directly using voltmeters and ammeters. Thus, both
voltage and current are not important role at microwave frequencies for measuring the level of
electrical excitation of a network.
However, in order to optimize the usage of low-frequency network concepts, the operation of a
microwave network as filter is best described in terms of voltages, currents and impedances
values.
Magnetic wall
+ + ++ + +
fC
pC
`
fC
fC
pC
`
fC
gaC gaC
Electric wall
+ + + - - -
fC
fC
pC
pC
gdC gdC
-
7/31/2019 PangKimPeck FYP
34/116
27
Reflection coefficient,1
1
11a
bS
1
1Re
portatpowerIncident
portatpowerflected
Transmission coefficient,1
221
a
bS
1
2
portatpowerIncident
portatpowerdTransmitte
Figure 6: Two-port network showing network variables
For two ports network are two by two as shown in Figure 6.
Scattering matrix [13] is also known as S parameters, denotes as [S] for some, also is a set of
matrix formation. The Sparameters are in general complex as:
2212
2111
SS
SS
Parameter of 11S and 22S are both known as the reflection coefficients. As well as, the operating
Parameter of 12S and 21S are representing the parameter of transmission coefficients.
Below shown the result designed filter S-parameter generation from ADS momentum.
Achieve a good result on reflection coefficient, with 11S gain less than -20dB of the filters.
21
S Known as the power efficiency of the filter, also require power loss to be less than -10dB.
1a
1b
2a
2b
Two- portNetwork
-
7/31/2019 PangKimPeck FYP
35/116
28
Intrinsic impedance
Intrinsic impedance, is been the ratio relation between electric and magnetic field components
respectively. Therefore, is generally known as the Transverse Electromagnetic (TEM) of the RF
studies process.
7
0104,
tyPermeabiliAbsolute 12
01085.8,
tyPermittiviAbsolute
FieldElectricEx
,
FieldMagneticHy ,
1: r
rNote
in Free Space propagation
r
r
r
r
y
x
H
EpedanceIntrinsic
120,Im
0
0
-
7/31/2019 PangKimPeck FYP
36/116
29
2.12 Selection of software simulation tool
Selection of software give a detail account of the project undertake from the given synopsis stage
to its completion in the form of a standalone simulation application. As simulation software
selection is part of the highlight in this project, also outlines the various software developmenttools available in the market as well as the pros and cons of each Integrated Development
Environment (IDE).
Knowing the platform of selecting the important key points for user friendly and powerful
software tools, as eventually, enlightening the gauging process performance on the designed
antenna. Furthermore, providing the controllability for modifying different various parameters
antenna, such as:
a) Dimension
b) Relative permittivity
c) Different way of defining layers, etc. to achieve fine tuning and optimal design
performance.
In addition, simulation tools is able to perform as expectation, consists of S-parameter, radiation
pattern, visualization on the various antenna design views will be consider provided in the
simulation software product environment, in this project the ADS (Agilent, Advance Design
Software) and HFSS (Ansoft, High Frequency Structural Simulator) are well considered.
HFSS is performing on the simulation of 3D full wave electromagnetic field, which requires a
high computerize processing power and its license fee is far expensive as compare with ADS.
Even though ADS provide only two and half waves simulations, it easily comes with free
evaluation copy and required a low processing power. With all these advantages of ADS, it
stands out to be my choice of software tools for this project.
-
7/31/2019 PangKimPeck FYP
37/116
30
2.12.1 Features of ADS Momentum
In the modern engineering society, simulation tools provide designers with comprehensive
simulation requirement platform whereby ADS is able to enlighten the process of design
performance. Thus, in order to analysis an efficient RF designs.Below are some capable steps functions on Momentum key:
Evaluation the Greens calculation of the design substrate
Performing the patterns of Meshing on the respective signal layers
Input source of information to MOM, perform the matrix equation calculation
In this application of S-parameters, which allow calibration and de-embedding
Adaptive of Frequency sampling selection able to enhance the order modeling.
-
7/31/2019 PangKimPeck FYP
38/116
31
3. Chapter 3 - Design Methodology
3.1 Microstrip width and length calculation (Validation)
In order to validate LineCal results, a set of formulas are applied to calculate the width of Microstrip.
Table 4: Shows a list of values needed to calculate the width.
Material Symbols LTCC FR4
Relative permittivityr
7.7 4.7
Microstrip thickness/width t 17 microns 17 microns
Substrate height h 50 microns 1600 microns
Intrinsic Impedance 120 120
Calculation for LTCC material
Effective dielectric constant,
28.5
93.035.41335.335.4
12135.335.4
50
50121
2
17.7
2
17.7
1212
1
2
1
5.0
5.0
5.0
5.0
re
rrre
W
h
.1
150
50
1/
toequalisvalueTherefore
h
W
hW
-
7/31/2019 PangKimPeck FYP
39/116
32
Microstrip impedance,
50
69.54
307.164
6.0393.1128.5
120
444.150
50
677.0393.150
50
28.5
120
444.1677.0393.1
1
1
1
1
In
h
WIn
h
WZ
re
c
Since both LineCal and calculation derived Micro-strip impedance to be 50 when Micro-strip
width is 50m, LineCal result has been successfully validated.
The length of the Microstrip Feed can be calculated as follows:
re
gGHzf
c
)(
28.51060
1039
8
g
97.2175g
Therefore, for Quarter wavelength, use4
gl ,
4
97.2175l
micronsl 544
3.1.1 LTCC Microstrip width calculation (LineCal)
Figure 7 is a screenshot captured of LineCal from ADS tools. LineCal is an integrated function has the
ability to create pre-determine physical width parameter.
Therefore, further assists designers in designing the Microstrip line. Whereby, SMA connector is 50
on the source feed design and Microstrip impedance also is set at 50 too.
-
7/31/2019 PangKimPeck FYP
40/116
33
Figure 7: Screen shot for ADS lineCal using LTCC material
ADS LineCal obtains Microstrip line length and width is approximate 50m and 568m
respectively. The yellow arrow pointing to the cells indicates the input substrate parameters and
component parameters values required for calculating the length and width of the micro-strip line.
Calculation for FR4 material
.1
8125.11600
2900
1/
thangreaterisvalueTherefore
h
W
hW
Micro-strip lineapproximateWidth is 50m and
length is 568m
-
7/31/2019 PangKimPeck FYP
41/116
34
Effective dielectric constant,
52.3
67.085.2
62.785.185.2
55.012185.185.2
2900
1600121
2
17.4
2
17.4
1212
1
2
1
5.0
5.0
5.0
5.0
re
rr
reW
h
Microstrip impedance,
50
235.50
494.200
79.0393.18125.152.3
377
444.116002900677.0393.1
16002900
52.3
120
444.1677.0393.1
1
1
1
1
In
h
WIn
h
WZ
re
c
Since both LineCal and calculation derived Microstrip impedance to be 50 when Microstrip width
is 2900m, LineCal result has been successfully validated.
The length of the Micro-strip Feed can be calculated as follows:
re
gGHzf
c
)(
52.3105.1
1039
8
g
micronsg 106600
Therefore, for Quarter wavelength, use4
gl ,
4
106600l
micronsl 26650
-
7/31/2019 PangKimPeck FYP
42/116
35
3.1.2 FR4 Microstrip width calculation (LineCal)
Figure 8 is a screenshot captured of LineCal from ADS tools. LineCal is an integrate function has the
ability to create pre-determine physical width parameter.
Therefore, further assists designers in designing the Microstrip line. Whereby, SMA connector is 50 on the source feed design and Microstrip impedance also is set at 50 too.
Figure 8: Screen shot for ADS lineCal using FR4 material
ADS LineCal obtains Microstrip line length and width is approximate 2900m and 26584m
respectively. The yellow arrow pointing to the cells indicates the input substrate parameters and
component parameters values required for calculating the length and width of the Micro-strip line.
Micro-strip lineapproximateWidth is 2900m and
length is 26584m
-
7/31/2019 PangKimPeck FYP
43/116
36
3.1.3 LTCC Microstrip length selection calculation
Table 5: Trend chart for LTCC micro-stripline length
With the generated length: 568m from LineCal as a guide, various different lengths are tested
in the simulation as shown above Table 5. In this project, the required V-band is around 50 GHz
to 75 GHz and the required length needed has to be as compact as 568m or lesser with a
reasonable insertion and return loss.
Both LTCC micro-stripline with and without parasitic length at 400m laid on the V-band range.
Besides that the insertion loss: -3.69 and return loss: -2.461 are both very near to the rest of the
different length designs. Thus, the final LTCC filter length is selected as 400m.
-10
0
10
20
30
40
50
60
70
80
90
300 350 400 450 500 550 600S-parameters(dB)andferquency(GHz)
LTCC, micro-stripline length (m)
Frequency
Frequency PE
S11
S21
-
7/31/2019 PangKimPeck FYP
44/116
37
3.1.4 FR4 Microstrip length selection calculation
Table 6: Trend chart for FR4 micro-stripline length
With the generated length: 26584m from LineCal as a guide, various different lengths are tested
in the simulation as shown above Table 6. Due to the limitation of analyzer used in this project,
the targeted frequency is around 1.5 GHz and the required length needed has to be as compact as
26584m or lesser with a reasonable insertion and return loss.
Both FR4 micro-stripline with and without parasitic length at 21500m laid on the 1.5GHzrange. Besides that the insertion loss: -4.959 and return loss: -2.141 are both very near to the rest
of the different length designs. Thus, the final FR4 filter length is selected as 21500m.
-6
-5
-4
-3
-2
-1
0
1
2
3
S-parameters(dB)andFrequenc
y(GHz)
FR4, micro-stripline length (m)
Frequency
Frequency PE
S11
S21
-
7/31/2019 PangKimPeck FYP
45/116
38
3.2 Spacing Selection
3.2.1 Coupled strip-line LTCC filter with and without parasitic element
Table 7: Trend chart for single strip line LTCC filter with and without parasitic element
Figure 9: Parasitic element diagram
A signal line is formed on the middle layer and the parasitic elements are patterned above and below
the middle layer. The parasitic elements only cover the first and last filter sections because these
sections are the dominant cause of the process variation sensitivity.
-16
-14
-12
-10
-8
-6
-4
-2
0
10 20 30 40 50 60 70 80 90 100
S21
Insert
ionloss(dB)
Spacing, s (m)
LTCC, S21 versus spacing between coupled line with
and without parasitic elements
Without parasitic element
With parasitic element
-
7/31/2019 PangKimPeck FYP
46/116
39
Above chart shows the characteristic of the coupled stripline with the parasitic elements versus
spacing between adjacent lines. Above diagram show the port configuration. Line length and line
width are 400m and 50m, respectively. With parasitic element wide is 200 m. The simulation
was performed using a commercial EM simulation. The red square and blue diamond plot coupled
line characteristics with and without parasitic elements, respectively. The increase in insertion loss of
the coupled line with parasitic elements is clearly smaller than that of the normal coupled line, when
the spacing increases. Thus, the final LTCC filter spacing selected is 10m
3.2.2 Single strip-line FR4 designed filter with and without parasitic element
Table 8: Single Strip-line FR4 designed filter with and without parasitic element
Above chart shows the characteristic of FR4 coupled stripline with the parasitic elements versus
spacing between adjacent lines. Above diagram show the port configuration. Line length and line
width are 21500m by2900m, respectively. The parasitic element is 21500m by 10000 m width.
The simulation was performed using a system analyzer. The red square and blue diamond plot
coupled line characteristics with and without parasitic elements, respectively. The increase ininsertion loss of the coupled line with parasitic elements is clearly smaller than that of the normal
coupled line, when the spacing increases. This result indicates that the coupled stripline has low
sensitivity to spacing variation. Thus, the final FR4 filter spacing selected is 400m.
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
S21
(m)
FR4, Spacing, S(m)
S21, FR4, Without
parasitic element
S21, FR4, With parasitic
element
-
7/31/2019 PangKimPeck FYP
47/116
40
4 Chapter 4 - Design Layout On Bandpass Filter
4.1LTCC BPF Filter with Parasitic Element
Below shown the final designed layout diagram of the LTCC with parasitic element after selecting
the right values of length, width and spacing:
Figure 10: Final designed layout diagram of BPF filter of LTCC substrate layer at the first
and last sector of the filter top and bottom bonded by parasitic element
4.2LTCC BPF Filter without Parasitic Element
Below shown the final designed layout diagram of the LTCC without parasitic element after
selecting the right values of length, width and spacing:
Figure 11: Final designed BPF filter of LTCC substrate layer and without parasitic
element layout diagram
-
7/31/2019 PangKimPeck FYP
48/116
41
4.3Design Layout of FR4 BPF filter without Parasitic Element
Below shown the final designed layout diagram of the FR4 with parasitic element after selecting the
right values of length, width and spacing:
Figure 12: FR4 final design without parasitic element
4.4Design Layout of Parasitic Element
Below shown the final designed layout diagram of the FR4 without parasitic element after selecting
the right values of length, width and spacing:
Figure 13: FR4 final design parasitic element
-
7/31/2019 PangKimPeck FYP
49/116
42
5 Chapter 5 - Simulation Results
5.1Simulation Setup
The following steps are carried out in the process of deviating the spacing requirement:
Step 1: Modify the substrate by entering a thickness of 50m and Permitivity ( r ): Real is 7.7 and
loss tangent is 0.002.
Insert theThickness
Insert theReal Value
Insert LossTangent
-
7/31/2019 PangKimPeck FYP
50/116
43
.
Step 2: Insert the substrate layer and layout layer conductivity under metallization layer setting
before processing to simulation setting
Step 3: Insert the simulation settings on the substrate layer as shown above
StopFrequency
SamplingStop
ChangeFrequencyType
StartFrequency
-
7/31/2019 PangKimPeck FYP
51/116
44
5.2Simulation Results
5.2.1 LTCC Band-pass Filter (with parasitic element) Insertion Loss, Return Loss andCenter Frequency
Figure 14: shows the simulated values of the Insertion Loss S(1,1): -30.794dB, Return Loss
S(2,1): -0.611dB and Center Frequency freq: 61.81GHz
-
7/31/2019 PangKimPeck FYP
52/116
45
5.2.2 LTCC Band-Pass filter (with parasitic element) simulated Bandwidth
Figure 15: LTCC Band-Pass filter (with parasitic element) simulated Bandwidth
By using the simulated values generated as shown above, at the 3dB Bandwidth can be
derived:
High center frequency (M4)Low center frequency (M3) / Middle center frequency
(M5)
= [M4(freq)- M3(freq)]/M5(freq)
= [(64.13GHz60.28GHz)/ 61.81GHz] x 100%
= 6.23%
-
7/31/2019 PangKimPeck FYP
53/116
46
5.2.3 LTCC (without parasitic element) Insertion Loss, Return Loss and CenterFrequency
Figure 16: Shows the simulated values of the Insertion Loss S(1,1):-29.742dB, Return Loss
S(2,1):-0.695dB and Center Frequency freq: 61.81GHz
-
7/31/2019 PangKimPeck FYP
54/116
47
5.2.4 LTCC Band-Pass filter (without parasitic element) simulated Bandwidth
Figure 17: LTCCBand-Pass filter (without parasitic element) final simulated result
By using the simulated values generated as shown above, at the 3dB Bandwidth can be
derived:
High center frequency (M4)Low center frequency (M3) / Middle center frequency
(M5)
= [M4(freq)- M3(freq)]/M5(freq)
= [(63.92GHz60.46GHz)/ 61.81GHz] x 100%
= 5.6%
-
7/31/2019 PangKimPeck FYP
55/116
48
5.2.5 FR4 Band-pass Filter (with parasitic element) Insertion Loss, Return Loss andCenter Frequency
Figure 18: Shows the simulated values of the Insertion Loss S(1,1): -45.888dB, Return Loss
S(2,1): -5.434dB and Center Frequency freq: 1.502GHz
-
7/31/2019 PangKimPeck FYP
56/116
49
5.2.6 FR4 Band-Pass filter (with parasitic element) simulated Bandwidth
Figure 19: FR4 Band-Pass filter (with parasitic element) final simulated result
By using the simulated values generated as shown above, the Bandwidth can be derived:
High center frequency (M4)Low center frequency (M3) / Middle center frequency
(M5)
= [M4(freq)- M3(freq)]/M5(freq)
= [(1.583GHz1.451GHz)/ 1.502GHz] x 100%
= 8.79%
-
7/31/2019 PangKimPeck FYP
57/116
50
5.2.7 FR4 Band-pass Filter (without parasitic element) Insertion Loss, Return Loss andCenter Frequency
Figure 20: Shows the simulated values of the Insertion Loss S(1,1): 25.015dB, Return Loss
S(2,1): 5.670dB and Center Frequency freq: 1.535GHz
-
7/31/2019 PangKimPeck FYP
58/116
51
5.2.8 FR4 Band-Pass filter (without parasitic element) simulated Bandwidth
Figure 21: FR4 Band-Pass filter (with parasitic element) final simulated result
By using the simulated values generated as shown above, the Bandwidth can be derived:
High center frequency (M4)Low center frequency (M3) / Middle center frequency(M5)
= [M4(freq)- M3(freq)]/M5(freq)
= [(1.585GHz1.454GHz)/ 1.534GHz] x 100%
= 8.54%
-
7/31/2019 PangKimPeck FYP
59/116
52
5.2.9 LTCC Parasitic Element Performance
Table 9: LTCC Parasitic Element performance
Table 9 shows the characteristics of the LTCC designed BPF with parasitic elements versus the
deviation of the width of the parasitic element. The S-parameters on 11S insertion loss obtain
more gradual curve, when the width of the parasitic element is more than 120 m and 21S return
loss stage constant at around -0.5dB. Thus, with parasitic elements provides very stable
performance, even in the presence of process deviation. Furthermore, proven the BPF designed
performance of compactness and low loss in the design.
0.0554
0.0556
0.0558
0.0560
0.0562
0.0564
0.0566
0.0568
0.0570
0.0572
-35
-30
-25
-20
-15
-10
-5
0
50 60 80 100 120 140 160 180 200
Bandwidth
S-parameterandBandwidth
Width of parasitic element (m)
S11
S21
Bandwidth
-
7/31/2019 PangKimPeck FYP
60/116
53
5.2.10 FR4 Parasitic Element Performance
Table 10: FR4 characteristics versus width of Parasitic Element Performance
Table 10 shows the characteristics of the FR4 designed BPF with parasitic elements versus the
deviation of the width of the parasitic element. The S-parameters on 11S insertion loss obtain
more gradual curve, when the width of the parasitic element is more than 7000 m and 21S return
loss stage constant at around -5dB. Thus, with parasitic elements provides very stable
performance, even in the presence of process deviation. Furthermore, proven the BPF designed
performance of compactness and low loss in the design.
0.0821
0.0822
0.0823
0.0824
0.0825
0.0826
0.0827
0.0828
-80
-70
-60
-50
-40
-30
-20
-10
0
Bandwidth
S-parameter(dB)
Width of the parasitic element (m)
S11
S21
Bandwidth
-
7/31/2019 PangKimPeck FYP
61/116
54
5.3 Simulation Comparison
5.3.1 Design strip-line parallel-coupled LTCC BPF Comparison
Table 11: Design strip-line parallel-coupled LTCC BPF comparison
The characteristics of the LTCC BPF demonstrate in table 11 obtain the insertion losses is -31dB
and return losses is -0.6dB, versus spacing between coupled lines on the first and last filter
sections. The deviation ranges of each parameter of the designed BPF with parasitic elements are
smaller as compare to the conservative BPF any without parasitic elements. The optimal result
selection for the design LTCC BPF at the spacing 10m was selected.
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
10 20 30 40 50 60 70 80 90 100
S-parameter(dB)
LTCC Spacing, S (m)
S11, Without parasitic
element
S21, Without parasitic
element
S11, With parasitic
element
S21, With parasitic
element
-
7/31/2019 PangKimPeck FYP
62/116
55
5.3.2 Design strip-line parallel-coupled FR4 BPF Comparison
Table 12: S-parameters versus spacing between coupled lines on the FR4 BPF
The characteristics of the FR4 BPF demonstrate in table 12 obtain the insertion losses is -36dB
and return losses is -6dB, versus spacing between coupled lines on the first and last filter
sections. The deviation ranges of each parameter of the designed BPF with parasitic elements are
smaller as compare to the conservative BPF any without parasitic elements. Have the same as the
LTCC design BPF as compare. The optimal result selection for the design FR4 BPF at the
spacing 400m was selected.
-40
-35
-30
-25
-20
-15
-10
-5
0
S-parameters(m)
FR4 Spacing, S (m)
S11, Without parasitic
element
S21, Without parasitic
element
S11, With parasitic
element
S21, With parasitic
element
-
7/31/2019 PangKimPeck FYP
63/116
56
6 Chapter 6 - Design Fabrication
In the fabrication procedure, the designed filter is required to convert to Geber file so as to send
out to vendor for design fabrication.
Figure 22: Arrangement of the 4 layers of FR4 substrate is shown below.1
stlayer of prototype,
Top surface Ground andBottom surface Etch off
2nd layer of prototype,Top surface as shown above stripelement in colour yellow andBottom surface Etch off
3r layer of prototype,Top surface as shown above strip
element in colour Green andBottom surface Etch off
4t layer of prototype,
Top surface as shown above stripelement in colour Yellow and
Bottom surface Ground
-
7/31/2019 PangKimPeck FYP
64/116
57
Figure 23: Design layout versus OSP Coating
Below shows the design layout on the left column and prototypes with OSP coating on the right
column:
FR4 (OSP) layer 1
FR4 (OSP) layer 2
FR4 (OSP) layer 3
FR4 (OSP) layer
-
7/31/2019 PangKimPeck FYP
65/116
58
Figure 24: Design layout versus HASL Coating
Below shows the design layout on the left column and prototypes with HASL coating on the
right column:
FR4 (HASL) Layer 1
FR4 (HASL) Layer 2
FR4 (HASL) Layer 3
FR4 (HASL) Layer 4
-
7/31/2019 PangKimPeck FYP
66/116
59
7 Chapter 7 - Evaluation Tests
7.1Setup on test equipment
Prototype measurement is performed firstly in FYP BLK 82, room5-06 with the following measuring
equipments and tools:
a) Spectrum Analyzerb) 2m BNC cables x 2c) BNC connector with 50 load termination x 2d) SMA connector with 50 x 2
Figure 25: Photos of the test equipment a) Spectrum Analyzer b) 2m BNC cable c) BNC to
spectrum analyzer d) 50 SMA connector
a) Spectrum Analyzer b) 2m BNC cable
c) BNC to spectrum analyzer d) 50 SMA connector
-
7/31/2019 PangKimPeck FYP
67/116
60
Figure 26: Diagram shows the SMA connectors are soldier on the 3rd
layer of the designed
FR4 BPF
-
7/31/2019 PangKimPeck FYP
68/116
61
7.2 Actual Test Result
7.2.1 FR4 (HASL) BPF generated results
With the setup as shown below, the insertion loss and return loss are generated by the spectrum
analyzer as shown in Figure 28 and 29 respectively.
Figure 27: FR4 (HASL) Test Setup
Figure 28: Result on four layer FR4 substrate BPF, 1.59GHz coat with HASL ( 11S :-
21.803dB)
-
7/31/2019 PangKimPeck FYP
69/116
62
Figure 29: Result on four layer FR4 substrate BPF, 1.59GHz coat with HASL ( 21S : -
17.269dB)
7.2.2 FR4 (OSP) BPF generated results
With the setup as shown below, the insertion loss and return loss are generated by the spectrum
analyzer as shown in Figure 31 and 32 respectively.
Figure 30: Four layer FR4 substrate BPF (OSP) Test Setup
-
7/31/2019 PangKimPeck FYP
70/116
63
Figure 31: Result on four layer FR4 substrate BPF, 1.63GHz coat with OSP ( 11S : -
24.579dB)
Figure 32: Result on four layer FR4 substrate BPF, 1.63GHz coat with OSP ( 21S : -
7.5493dB)
-
7/31/2019 PangKimPeck FYP
71/116
64
7.3 Comparison of prototypes and simulated results
Table 13: Comparison of prototypes and simulated results
Using the ideal simulated results comparing with the actual prototypes, the return loss shows a
drastic drop using HASL coating method of -24.085dB and a gain on the insertion loss of -
11.835dB. While using the OSP coating method, the return loss has a slight increase of -2.871dBas compared to HASL method and a great decrease on the insertion loss of -9.7197dB.
From the results generated and compared in the chart above concluded that OSP coated FR4 BPF
shows to have better performance in turn of lower insertion loss and higher return loss as
compared to HASL.
-50
-40
-30
-20
-10
0
FR4 Simulation FR4 Prototype (HASL) FR4 Prototype (OSP)
S-Parameter(dB)
S11
S21
-
7/31/2019 PangKimPeck FYP
72/116
65
8 Chapter 8 - Conclusion
The final project proposed and demonstrated a 1.5GHz stripline parallel-coupled bandpass filter
with parasitic elements on a four layers of FR4 substrate.
Similarly, all projects has limitation and constraint, for the intrinsic area for the three-pole four
layers of 50-m thick LTCC BPF is 1.6mm by 0.66mm. Simulation result achieved an insertion
loss of -30.79dB and a return loss only -0.61dB. That included all transitions section, with
bandwidth of 6.23% with center frequency of 61.81GHz is obtained. Thus, theoretically
objective of compact, low loss performance and minimal cost is achieved. However, due to cost
constraint, proposed FR4 BPF to replaced LTCC.
A prototype three-pole bandpass filter was fabricated on four layers of 1600-m thick FR4substrate. The intrinsic area of the prototype BPF filter is 86 mm by 31.6 mm. By using
Spectrum analyzer, the filter measure result achieved an insertion loss of -7.54dB, which
included all transitions section, while the bandwidth is 8.79 % and return losses well below -10
dB at the center frequency of 1.63GHz. The prototype BPF structure has comprised with low
loss performance and at a minimal cost.
Before starting on working on the prototype BPF, fundamental knowledge of the RF microwave
and usage of the software tool have demanded a lot of time on researching and understanding but
was fulfilling. Starting from simulation process to producing the final prototype has been a long
journey nevertheless it has completed within the given time frame, thus time management skills
are also acquired thru out the entire course of this project.
Software Agilent ADS enabled the performance of the designed filter to be evaluated before the
filter was implemented for the fabrication. Hence, reducing on the time spent to select the right
filter range. In a nutshell, it was the importance of learning process and experience gained that
has been both beneficial and rewarding in this project.
-
7/31/2019 PangKimPeck FYP
73/116
66
9 Chapter 9 - Suggestion for future works
In order to enhance the works better, further exploring on the BPF material should be done. In
additional, improvement on the gain and insertion loss can be analyzed so as to achieve better
results for future works.
-
7/31/2019 PangKimPeck FYP
74/116
67
10 Reference
[1] K. Maruhashi, S. Kishimoto, M. Ito, K. Ohata, Y. Hamada, T. Morimoto, and H. Shimawaki,
"Wireless uncompressed-HDTVsignal transmission system utilizing compact 60-GHz-band
transmitter and receiver," 2005 IEEE MTT-S Int. Microwave Symp. Dig., pp. 1867-1870,
June 2005.[2] J.-H. Lee, G. DeJean, S. Sarkar, S. Pinel, K. Lim, J. Papapolymerou, J. Laskar, and M.
Tentzeris, " Highly Integrated Millimeter-wave Passive Components Using 3-DLTCC System-on-Package (SOP) Technology," IEEE trans. Microwave Theory Tech., vol.
53, no. 6, pp. 2220-2229, June 2005.
[3] D. Y. Jung, W. I. Chang, and C. S. Park, "A System-on-Package Integration of 60 GHz ASKTransmitter," 2006 IEEE Radio and Wireless Symp. Dig., pp. 151-154, Jan. 2006.
[4] J.-H. Lee, S. Pinel, J. Papapolymerou, J. laskar, and M. Tentzeris, "Low-Loss LTCC Cavity
Filters Using System-on-Package Technology at 60 GHz," IEEE trans. Microwave
Theory Tech., vol. 53, no. 12, pp. 3817-3824, Dec. 2005.[5] M. Ito, K. Maruhishi, K. Ikuina, T. Hashiguchi, S. Iwanaga, and K. Ohata, "A 60-GHz-Band
Planar Dielectric Waveguide Filter for Flip-Chip Modules," IEEE trans. Microwave TheoryTech.,vol. 49, no. 12, pp. 2431-2436, Dec. 2001.
[6] J.-H. Lee, N. Kidera, S. Pinel, J. Papapolymerou, J. Laskar, and M. Tentzeris, "A HighlyIntegrated 3-D Millimeter-Wave Filter Using LTCC System-on-Package (SOP) Technology
for V-band WLAN Gigabit Wireless Systems," 2005 Asia-Pacific Microwave Conf. Dig., pp.
3-5, 2005.[7] Y. C. Lee and C. S. Park, "A 60GHz Stripline BPF for LTCC System-in-Package
Applications," 2005 IEEE MTT-S Int. Microwave Symp. Dig., pp. 1413-1416, June 2005.
[8] A. Simine, D. Kholodnyak, P. Turachuk, V. Piatnitsa, H.Jantunen, and I. Vendik,
"Enhancement of Inductance Q-factor for LTCC Filter Design," 35th European MicrowaveConference Dig., pp. 1319-1322, 2005. 1652 Thiswork o:A A waveguide, ceramic V MEMS,
SiA waveguide, LTCC K> waveguide, Quartz 0 planar, LTCC O
-
7/31/2019 PangKimPeck FYP
75/116
68
11 Appendix
-
7/31/2019 PangKimPeck FYP
76/116
69
Figure 1 Showing the coupled microstrip lines 400m by 50m with spacing of 10m.
Figure 2 Showing the coupled striplines 400m by 50m with spacing of 100m.
-
7/31/2019 PangKimPeck FYP
77/116
70
Figure 3 Shown 3D object on coupled striplines 400m by 50m with spacing of 100m of
four layers of LTCC substrate.
-
7/31/2019 PangKimPeck FYP
78/116
71
Figure 4 Shown the coupled striplines 400m by 50m with spacing of 10m bonded by
parasitic element of 400m by 200m top and bottom.
Figure 5 Shown the coupled striplines 400m by 50m with spacing of 100m bonded by
parasitic element of 400m by 200m top and bottom.
-
7/31/20