pertemuan3 diode karakteristik
TRANSCRIPT
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Forward Biased P-N Junction
Forward biasing the p-n junction drives holes to the junction from the p-type material and electrons to the junction from the n-type material. At the junction the electrons and holes combine so that a continuous current can be maintained.
Show energy bands. Compare to reverse bias.
► Index
► Semiconductor concepts
► Semiconductors for electronics
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Reverse Biased P-N Junction
The application of a reverse voltage to the p-n junction will cause a transient current to flow as both electrons and holes are pulled away from the junction. When the potential formed by the widened depletion layer equals the applied voltage, the current will
cease except for the small thermal current.
Show energy bands. Compare to forward bias.
► Index
► Semiconductor concepts
► Semiconductors for electronics
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The P-N Junction Diode
The nature of the p-n junction is that it will conduct current in the forward direction but not in the reverse direction. It is therefore a basic tool for rectification in the building of DC power supplies.
Diode varieties
PIN diode
Step-recovery diode
Diode applications
► Index
► Semiconductor concepts
► Semiconductors for electronics
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The PIN Diode
The PIN diode has heavily doped p-type and n-type regions separated by an intrinsic region. When reverse biased, it acts like an almost constant capacitance and when forward biased it behaves as a variable resistor.
The forward resistance of the intrinsic region decreases with increasing current. Since its forward resistance can be changed by varying the bias, it can be used as a modulating device for AC signals. It is used in microwave switching applications.
► Index
► Semiconductor Semiconductor conceptsconcepts
► SemiconductorSemiconductors for s for electronicselectronics
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Step-Recovery Diode
In the step-recovery diode the doping level is gradually decreased as the junction is approached. This reduces the switching time since the smaller amount of stored charge near the junction can be released more rapidly when changing from forward to reverse bias.
The forward current can also be established more rapidly than in the ordinary junction diode. This diode is used in fast switching applications.
► IndexIndex
► Semiconductor Semiconductor conceptsconcepts
► SemiconductorSemiconductors for s for electronicselectronics
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DiodeDiode
The ideal diode:
(a) diode circuit symbol; (b) i-v characteristic; (c) equivalent circuit in the reverse direction; (d) equivalent circuit in the forward direction.
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Diode CircuitsDiode Circuits
(a) Rectifier circuit. (b) Input waveform. (c) Equivalent circuit when (d) Equivalent circuit when v1 > 0 (e) Output
waveform.
During positive cycle, diode allow current to pass through and output voltage is positive
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Diode CharacterizationDiode Characterization
The i-v characteristic of a silicon junction diode.
► Diodes have a nonlinear Diodes have a nonlinear response to voltageresponse to voltage
► We model different regions of We model different regions of operationoperation
Forward BiasForward Bias
Reverse BiasReverse Bias
BreakdownBreakdown
1/ TnVvs eIi
1/ TnVvs eIi
sIi
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Forward-Bias RegionForward-Bias Region
► Terminal voltage Terminal voltage v v is positiveis positive
► k=Boltzmann’s constant=k=Boltzmann’s constant=► T=absolute temparature in K=273+ CelciusT=absolute temparature in K=273+ Celcius► q=magnitude of electronic charge=q=magnitude of electronic charge=► 1<n<2, depending on material, assume n=11<n<2, depending on material, assume n=1
► EXAMPLE: Diode with n=1 displays forward voltage EXAMPLE: Diode with n=1 displays forward voltage of 0.7V at 1mA. Findof 0.7V at 1mA. Find
► SOLUTION: SOLUTION: ► For n=1: For n=1: ► For n=2: For n=2:
)1( / TnVvs eIi
q
kTVT
231038.1 x
Cx 19106.1
ST
nVvS I
inVveIi T ln/
SITT nVv
SnVv
S ieIeIi //
AAxeIS151625/7003 10109.610
AAxeIS91050/7003 10103.810
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Reverse-Bias RegionReverse-Bias Region
► Terminal voltage Terminal voltage v v is negativeis negative
v v is negative and a few times larger than is negative and a few times larger than
► Current in the reverse direction is constant and equal to Current in the reverse direction is constant and equal to
and called and called saturation currentsaturation current. . ► Typically, real life diodes exhibit much larger reverse Typically, real life diodes exhibit much larger reverse
currentscurrents
sIi
TV
SI
AIS1514 1010
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Break Down RegionBreak Down Region
► Knee of diode Knee of diode I-vI-v characteristic, the voltage characteristic, the voltage is less than Zener voltage. is less than Zener voltage.
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Diode ZenerDiode Zener
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Diode Zener Characterization Diode Zener Characterization
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Equivalent Diode ZenerEquivalent Diode Zener
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Diode ModelDiode Model
► As a resistor with value equal to As a resistor with value equal to reciprocal of the slope of the “reciprocal of the slope of the “i-v”i-v” curvecurve
► Linearization around bias point VD and Linearization around bias point VD and time varying signal vd(t) is time varying signal vd(t) is superimposed. superimposed.
► Current due to VD:Current due to VD:
► Approx.Approx.
)/( TD nVvSD eII
)/()(()()()( TdD nVtvVSDdDD eItitvVtv
)1()(1T
dDD
T
d
nV
vItI
nV
v
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Small Signal ApproximationSmall Signal Approximation
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Equivalent circuit modelEquivalent circuit model► For small changes around For small changes around
bias point bias point Q Q is reciprocal of is reciprocal of tangent :tangent :
► VDVD0 is the intercept of the 0 is the intercept of the tangent on the tangent on the vDvD axis axis
DD IiD
Dd v
ir
/1
)(1
0DDD
D vvr
i
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Separate DC and small signal analysis
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Basic Limiting CktsBasic Limiting Ckts