poly tronic s

8/18/2019 Poly Tronic s

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-AN EMERGING FUTURE

BY

V.Thamothiran

V.Jagadesan

Prefina EEE

[email protected]

[email protected]

JAYAM COLLEGE OF ENGG & TECH

NALLANUR,DHARMAPURI.

mailto:[email protected]:[email protected]


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ABSTRA T

“Existence of every thing is felt with new innovations and

inventions”. Thus to relace silicon a alternate technology to meet our

resent day needs so that the roduction cost could reduce to handsome

amount! consume less ower and overall ma"e thing easy is this

technology “#$%&T'$()*+”.

#$%&T'$()*+ is an emerging advancement in the

materialistic world which has enormous alications to change the

existing conditions to a dramatic extent. The researches ,rought a,out

innovative ideas on integrate lastics into mainstream electronics.

-iewing of world could change through flat anel dislays. Transistor

could ,e made just li"e in"jet rinting on aers. /atteries could ,e

made using lastics. -ery soon we could see eaers which could ,e

continuously udated via the internet. The age of olymer electronics

has ,egun and could revolutioni0e this world.


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INTRODU TION

+ilicon considered as the ,est semiconductor and "nown to ,e “"ith

and "in “ of electronics has largely influenced the electronic industry and would

continue to do so over a eriod of time. owever we are loo"ing for a relacement

or an alternative that could meet our needs. 2e "now retty well the rover,

“(ecessity is the mother of invention”3 exactly the same is this case too.

Today most of the electronic circuits are integrated

circuits4semiconductor chis fa,ricated out of silicon. #roducing these circuits

involves huge investments "nown to ,e in millions of dollars. +o we are coming

out with a new technology "nown as #$%&T'$()*+ which would ,e a,le to

roduce these circuits on lastics which are flexi,le enough to ,e easily rolled u

have dislay screens that can ,e continuously udated with shar images consume

less ower and a,ove all can ,e manufactured at a fraction of the cost involved in

ma"ing semiconductor chis.

Thus #olymer Electronics a,,reviated as #$%&T'$()*+ is a

com,ination of two different terminologies meaning electronics using olymers or

simly lastics.

ere5s a loo" into how lastics could revolutioni0e the world of

electronics! what changes on existing things it could ma"e! what new things it

could ,ring a,out in detail in our aer.


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What is a POLYMER?

#olymers are nothing ,ut macromolecules ,uilt ,y reeated chain of

monomers ,y the rocess of olymeri0ation. These olymers are formed ,ecause

of dou,le and trile ,onds ,etween monomer to form a rigid structure and uni6uechemical and hysical characteristics. There are many such olymers li"e

olyethylene 7olethene! olyactelyene! olyvinylchloride 7#-* and so on.

)n case of olyactelyene! which ossesses conjugated dou,le ,onds is

as shown in fig.

/ased on their ultimate form and use a olymer can ,e classified as

lastics! elastomer! fi,re or resin. 2hen a olymer is shaed into hard and tough

utility they are termed as lastics. s we "now olymers or simly lastics are the

extensively used in this materialistic world. Their uses and alications range right

from your tooth ,rush till your clothing and containers. They are used to coat metal

wires to revent electric shoc"s. +uch is the usage of olymers in this day today

life.

http://www.chm.bris.ac.uk/webprojects2001/parrott/pages/conjugated_double_bonds.htmhttp://www.chm.bris.ac.uk/webprojects2001/parrott/pages/conjugated_double_bonds.htm


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doing 7adding imurities to ma"e them conducting. #entacene! oligothioenes!

olyacetelyene!etc!. are found to the ,est examles.

)t is well "nown that grahite is a good conductor! reviously it was

thought that olymers which su,stitute a car,on 7e.g. adding hydrogen=s to ma"e

hydrocar,ons for another atom could not conduct! however our greater "nowledge

of conjugated systems has ena,led the discovery of conducting olymers. s in a

conjugated system the electrons are only loosely ,ound! electron flow may ,e

ossi,le. owever as the olymers are covalently ,onded the material needs to ,e

doed for electron flow to occur. >oing is either the addition of electrons

7reduction reaction or the removal of electrons 7oxidation reaction from the

olymer. $nce doing has occurred! the electrons in the i,onds are a,le to


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well in trans undoed olyacetelyene n oxidation doing 7removal of electrons

can ,e done using iodine. The iodine attracts an electron from the olymer from

one of the i ,onds. Thus the remaining electron can move along the chain.

APPLI ATIONS

&

RE ENT TRENDS

s we "now the area of alications and usages of olymers are

wide sread in electronics. Aost imortantly the relacement of silica to fa,ricate a

microchi could ,ring a,out dramatic changes as ,ecause the cost will reduce to

hand some amount and roduction too ,ecomes easier.

*onducting olymers have many uses. The most documented are as

followsB

• *orrosion )nhi,itors

• *omact *aacitors

• nti +tatic *oating

• Electromagnetic shielding for comuters

second generation of conducting olymers have ,een develoed these

have industrial uses li"e!

• The recent develoment allows thinfilm transistors and even microchis to

,e made entirely of organic conductors.


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• >islay Technology to develo lightemitting olymers for use in the

flat anel dislays.

• %ight Emitting >iodes 7#$%& %E>5s

• n in"jetli"e techni6ue for roducing lastic transistors.

• +olar cells.

FLEXONI S

lthough current silicon chi technology has had a huge imact on

western lifestyles and the erformance of chis is continually ,eing imroved! the

silicon electronics industry is an industry facing limitations. *urrent methods of

silicon chi roduction are very caital intensive! re6uiring huge lants and large

num,ers of chis roduced at any one time to give small returns on large

investments. )n addition! the turnaround times are lengthy and mista"es are hugely

exensive. ;urthermore! suly and demand are far from sta,le and the rocess of

roducing chis is energy intensive! re6uires high temeratures and vacuum

rocessing! and in the case of hotolithograhic methods! a lot of ure water. There

is! however! a rocess that romises chea circuits! tailor made for individual

alications roduced locally as they are needed.

;a,rication of microelectronic comonents lastic su,strate instead of

silicon would allow manufacturing of comlete gadgets through just rinting

rocess in the near future. This technology would focus on ,uilding any electronic

device from ,ottom u gradually! so instead of ,uilding a device ,y adding new

comonents through the regular Cassem,le and ,uild5 techni6ue! the entire roduct

would come out of the rinter comlete with electronic circuitry em,edded in the


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roduct. The technology of roducing such em,edded electronic circuitry of lastic

wafers is “;%ED$()*+”.

The rinciles that aly to rinting on olymer are similar to those

used in industrial in" jet rinting. lthough lastic semiconductors are not yet

"ings of erformance 7lastic inhi,its electron mo,ility! the technology could

drastically reduce roduction costs! ,ecause it is much less volatile than silicon. )t

could hel usher in lowcost smart aliances. /ut it is found a way to rint clever

materials in such a way that we can ma"e ractical.

The new technology will have the most immediate imact on varioustyes of dislays! including mo,ilehone screens! flatscreen comuter monitors!

and televisions. The inclusion of lastic chis could mean that manufacturers of

T;T 7thinfilm transistor flatanel screens and televisions! which currently use a

traditional silicon,ased transistor for each ixel! would ,e a,le to switch to much

cheaer chis. The manufacturing rocess is simler! ,ecause it doesn5t re6uire

vacuum rocessing or high temeratures. +o facilities will cost a fraction of that

rice.

The huge cost of massmanufacturing silicon microchis is due

largely to the comlex rocesses involved. #hotolithograhic techni6ues are used

to attern wafers with micro circuitry! which is grown in owerful vacuums while

the wafers are ,a"ed at temeratures of several hundred degrees *elsius. +ilicon

foundries tyically use wafers of only one si0e! each fa,ricated as a discrete unit infacilities that cost ,illions of dollars to design and ,uild. There could ,e a

continuous roduction line of lastic circuits rinted on a lastic su,strate and then

cut into individual units. The su,strate may erhas ,e made of the same acetate

material as transarent -ugrah sheets.


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The whole thing wor"s at am,ient ressure! doing away with many of

the costly vacuum stes needed for silicon. The rinting of circuits on a scale far

larger than is ossi,le with silicon is also in view and of great imortance for the

develoment of large flatscreen dislays. The #lastic %ogic rinter resem,les any

home office in"jet rinter. ie0oelectric material exands when a voltage is

assed across it! ressing on a reservoir of fluid and sending drolets flying out

onto the su,strate.

The water,ased drolets contain an organic conductoroly 7!

ethylenedioxythiohene doed with solution of olystyrene sulfonic acid!

otherwise "nown as #E>$T4#++. s the drolets dry! they ,ecome a conducting

layer and form the source and drain of a transistor. These are then coated with a

layer of a semiconducting olymer 79!9dioctylfluoreneco,ithiohene! followed

,y a dielectric layer of olyvinyl henol. ;inally! the gate is rinted! creating a so

called to gate transistor.

The net result is lastic circuits whose advantages over their silicon

counterarts include low caital investment! a large area caa,ility! the a,ility to ,e

rinted on flexi,le su,strates! an environmentally friendly roduction rocess!

transarency! ease of customisation! 6uic" cycle and turnaround times! ro,ustness!

light weight! and thinness.

The molecular chains must line u in a way that ma"es it easy for electrons

to ho from one chain to another. /ut olymers tend to form into disorderedmicrostructures that reduce electronchargethe ,light of earlier attemts to

roduce organic transistors efficiently.


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owever it is discovered that a careful choice of olymers would yield

selforgani0ed chains that achieved charge mo,ilities of u to ?.1 cmF4-4s. ll of a

sudden! thin film transistors could match at least some of the roerties of their

silicon cousins.

2e have also had to overcome some in"jet rinting limitations! nota,ly a

maximum resolution of around G?? dots er s6uare inch 79?4cm F arising from

natural variations in the drolets= flight aths. This translates into a feature si0e of

around H? Im. (ow the smaller the transistor! the shorter the distances electrons

must travel within it! and the faster the device can ,e switched on and off.

Jnfortunately! this H?Im limit falls short of the 1?Im si0es needed for fast

circuits.

+o the resolution has to ,e increased. ;or now! they do it hoto

lithograhically ,y coating the glass su,strate with a hydroho,ic film of

olyimide in a attern that defines transistor dimensions. 2hen the water,ased

drolets fall on the surface! they are forced away from the hydroho,ic regions in

the re6uired attern. +o far! single transistors and simle logic circuits have ,een

roduced with a feature length of as little as H Im. This should lead to circuits with

the switching seeds of a few tens of "ilohert0 needed for dislay alications and

smart tags.

)t is ,elieved that hotolithograhy can ,e relaced ,y other techni6ues!

such as hoto atterning! in which having ultraviolet light shone on it atterns asingle hydrohilic layer. Thus the circuit could still ,e fa,ricated in successive

stes of coating and rinting. Jsing hotolithograhy now is an o,vious

shortcoming of initial demonstrations! ,ut it won5t ,e a ro,lem in the long term.

To overcome this ro,lem via a rocess of su,strate surface energy atterning! this


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directs the flow of the water,ased conducting olymer in"jet drolets. This in turn

ena,les highresolution definition of channel lengths! down to lengths of five

microns and ,elow.

Aore difficult will ,e ma"ing devices of greater comlexity. Aa"ing a

single transistor is in some sense trivial. +caling u the technology is the difficult

thing. )t is lanned to ,uild a more comlex rototye chi.

THIN FILM TRANSISTORS

&

FLAT PANEL DISPLAY

The technology develoed here ena,les the formation of a range of

devices re6uired in comlex integrated circuits. atented technology that allows

manufacturers to rint lastic onto a olymer su,strate. The result is a lastic

,ased transistor that is inexensive and flexi,le. #articular exertise has ,een

develoed in the creation of thin film transistors 7T;Ts! the "ey comonent of

digital circuits. Techni6ues have also ,een created to ena,le the construction of

other circuit elements including interconnects! resistors! caacitors! diodes and via

holes.

Thin ;ilm Transistor acts as a switch that can ,e controlled ,y the

voltage ut on the three contacts. These three contacts are called the source! drain

and the gate. The transistor consists of four layers. The thic"ness of each of the

layers is less than 1?? nmB


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1. The first conducting! layer defines the gate contact .

2. The second insulating! layer electrically searates the gate from the source

drain layer.

. The latter is the third conducting! layer.

.$n to this the semiconducting layer is alied.

How a TFT wors !

*hanging the gate voltage will vary the conduction in the semi

conducting layer. t negative gate voltages! ositive charges resent in the semi

conductor will accumulate at the semiconductor insulator interface. 2hen in this

case a voltage is alied at the drain contact 7the source is connected to earth a

current will flow from the source to the drain electrode. The switch is on.

'emoving the gate voltage! or alying a ositive gate voltage!

will remove the ositive charges from the interface 7deletion! and no current will

flow. The switch is off. The difference in current ,etween the on and off state 7the

on4off ratio is a,out 1?G.


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The ste is to in"jet rint the transistor source and drain onto the

energy atterned su,strate. The water,ased conductive olymer used! for examle

#E>$T! is attracted to the hydrohilic surface! ,ut reelled ,y the hydroho,ic

areas. This stos the conductive olymer sreading or slashing on the su,strate

and gives rise to the very high resolution achieva,le. The transistor semiconductor!

for instance >ow *hemical5s ;8TF! is then in" jetted into the ga ,efore the

transistor gate dielectric layer is sin coated from solution across the entire area.

Aetal is then deosited to form T;T gates and gate interconnects. The ,ac"lane is

now comlete and ready for integration with a dislay effect! such as li6uid crystal

or eaer.

>evices are designed ,y way of *> software and created using

advanced solution,ased rocessing techni6ues. The materials used are

sohisticated semi conducting! insulating! and conducting olymers. dditionally!

nanoarticle metals are utili0ed. #lastic electronics relicate many of the electrical

functionalities of conventional silicon without comlex vacuum deosition! mas"

alignment and high temerature manufacturing rocesses. The technology ena,les

roduction of devices with consistent erformance and significant cost advantages.

$ne of the challenges in develoing a manufacturing rocess

that could change an entire industry is where to concentrate the technology first. )t

has decided to initially turn to flat anel dislays 7;#>! and has done so for a

coule of reason. ;irstly! technology can ,e used to manufacture active matrix


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,ac"lanes and is comati,le with glass and flexi,le su,strates! as well as large

area alications. +econdly! the technology can ,e tested and refined! with a ready

mar"et to hand when erfected. (ew dislay effects! in articular ,ista,le dislays

for electronic aer alications are ,eing ioneered.

The dislays roduced are! for the moment! constructed on su,strates

of glass. Klass is used as it is easy to handle and its roerties are well "nown and

understood. The su,strates are urchased reatterned with indium oxide doed

with tin oxide! meaning the data lines and ixels are already ositioned. The lastic

electronic thin film transistor 7T;T source! drain and channel are then defined ,y

surface energy atterning. The su,strate is hydroho,ic 7water hating! ,ut the

alied energy atterning is hydrohilic 7water loving so the techni6ue of energy

atterning ena,les very high resolution to ,e achieved with channel length.

OR"ANI LED#S

>ue emergence of the resent technology we have develoed families

of highly efficient $%E> materials. These materials emit light through the rocess

of electro hoshorescence. )n traditional $%E>s! the light emission is ,ased on

fluorescence! a transition from a singlet excited state of a material. ccording to

theoretical and exerimental estimation! the uer limit of efficiency of an $%E>

doed with fluorescent material! is aroximately FHL.

2ith our electro hoshorescent materials used as a doant! which

exloits ,oth singlet and trilet excited states3 this uer limit is virtually

eliminated. E6uied with the otential of 1??L efficiency! the commerciali0ation

of electro hoshorescent devices ,y otimi0ing the device efficiency! color urity

and device storage and oeration dura,ilities.


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+uch a rocess is facilitated ,y the develoment and modification of

charge transort materials! charge ,loc"ing materials and luminescent materials!

and their incororation into devices.

TRANSPARENT ORGANIC LED$S'

The Transarent $%E> 7T$%E> uses a rorietary transarent

contact to create dislays that can ,e made to ,e toonly emitting! ,ottomonly

emitting! or ,oth to and ,ottom emitting 7transarent. T$%E>s can greatly

imrove contrast! ma"ing it much easier to view dislays in ,right sunlight.

/ecause T$%E>s are M?L transarent when turned off! they may ,e integrated

into car windshields! architectural windows! and eyewear. Their transarency

ena,les T$%E>s to ,e used with metal! foils! silicon wafers and other oa6ue

su,strates for toemitting devices.

TOLED C()*+) N)- D/0* O//(++)'

• D()+)6 +/ )7' /ecause T$%E>s have a transarent structure! they

may ,e ,uilt on oa6ue surfaces to effect to emission. +imle T$%E>


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dislays have the otential to ,e directly integrated with future dynamic

credit cards. T$%E> dislays may also ,e ,uilt on metal! e.g.! automotive

comonents. To emitting T$%E>s also rovide an excellent way to achieve

,etter fill factor and characteristics in high resolution! highinformation

content dislays using active matrix silicon ,ac"lanes.

• T(*/*()' T$%E> dislays can ,e nearly as clear as the glass or

su,strate they=re ,uilt on. This feature aves the way for T$%E>s to ,e ,uilt

into alications that rely on maintaining vision area. Today!


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• M0+:+* dislay consists of an array of vertically stac"ed

T$%E> su,ixels. To searately tune color and ,rightness! each of the red! green

and ,lue 7'K/ su,ixel elements is individually controlled. /y adjusting theratio of currents in the three elements! color is tuned. /y varying the total current

through the stac"! ,rightness is varied. /y modulating the ulse width! gray scale

is achieved. 2ith this +$%E> architecture! each ixel can! in rincile! rovide

full color. Jniversal >islay *ororation=s +$%E> technology may ,e the first

demonstration of an verticallyintegrated structure where intensity! color and gray

scale can ,e indeendently tuned to achieve highresolution fullcolor.

PERFORMANCE ENHANCEMENT'

The +$%E> architecture is a significant dearture from the traditional

side,yside 7+x+ aroach used in *'Ts and %*>s today. *omared to +x+

configurations! +$%E>s offer comelling erformance enhancementsB

• F00:0( +*;0+' +$%E>s offer dynamic fullcolor tuna,ility for


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achieve the same. This is esecially advantageous when maximi0ing ixel

density is imortant.

• N)*(0 1 @00 @*+(' +$%E>s also maximi0e fill factor. ;or examle!

when a fullcolor dislay calls for green! the red and ,lue ixels are turned

off in the +x+ structure. /y comarison! all the ixels turn on green in a

+$%E> under the same conditions. This means that +$%E> color definition

and icture 6uality are suerior.

• S*0*;0) + 0*(9) /)0 )' )n large screen dislays! individual ixels are

fre6uently large enough to ,e seen ,y the eye at short range. 2ith the +x+

format! the eye may erceive the individual red! green and ,lue instead of

the intended color mixture. 2ith a +$%E>! each ixel emits the desired

color and! thus! is erceived correctly no matter what si0e it is and from

where it is viewed.

FLE!IBLE OLED$S'

;$%E>s are organic light emitting devices ,uilt on flexi,le

su,strates. ;lat anel dislays have traditionally ,een fa,ricated on glass su,strates

,ecause of structural and4or rocessing constraints. ;lexi,le materials have

significant erformance advantages over traditional glass su,strates.

FOLED O@@)( R)=0+*( F)*+() @( D/0*'

• F0);0+B ;or the first time! ;$%E>s may ,e made on a wide variety of

su,strates that range from oticallyclear lastic films to reflective metal

foils. These materials rovide the a,ility to conform! ,end or roll a dislay

into any shae. This means that a ;$%E> dislay may ,e laminated onto a


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helmet face shield! an aircraft coc"it instrument anel or an automotive

windshield.

• U0+(*:098+-)98+, +8 @(7B The use of thin lastic su,strates will also

significantly reduce the weight of flat anel dislays in cell hones! orta,le

comuters and! esecially! largearea televisionsonthewall. ;or examle!

the weight of a dislay in a lato may ,e significantly reduced ,y using

;$%E> technology.

• D(*;0+B ;$%E>s will also generally ,e less ,rea"a,le! more imact

resistant and more dura,le comared to their glass,ased counterart.

• C+:)@@)+=) /()9B $%E>s are rojected to have fullroduction

level cost advantage over most flat anel dislays. 2ith the advent of

;$%E> technology! the rosect of rolltoroll rocessing is created. To this

end! our research artners have demonstrated a continuous organic vaor

hase deosition 7$-#> rocess for largearea rolltoroll $%E>

rocessing.

H- PASSIE MATRI! WOR>S'

#assive Aatrix dislays consist of an array of icture elements! or

ixels! deosited on a atterned su,strate in a matrix of rows and columns. )n an

$%E> dislay! each ixel is an organic light emitting diode! formed at the

intersection of each column and row line. The first $%E> dislays! li"e the first

%*> 7%i6uid *rystal >islays! are addressed as a /*=) 7*+(. This means that

to illuminate any articular ixel! electrical signals are alied to the row line and

column line. The more current umed through each ixel diode! the ,righter the

ixel loo"s to our eyes.

H- ACTIE MATRI! WOR>S'

http://www.universaldisplay.com/research.htmhttp://www.universaldisplay.com/research.htmhttp://www.universaldisplay.com/research.htmhttp://www.universaldisplay.com/research.htm


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)n an active matrix dislay! the array is still divided into a series of

row and column lines! with each ixel formed at the intersection of a row and

column line. owever! each ixel now consists of an organic light emitting diode

7$%E> in series with a thin film transistor 7T;T. The T;T is a switch that can

control the amount of current flowing through the $%E>. )n an active matrix

$%E> dislay 7A$%E>! information is sent to the transistor in each ixel!

telling it how ,right the ixel should shine. The T;T then stores this information

and continuously controls the current flowing through the $%E>. )n this way the

$%E> is oerating all the time! avoiding the need for the very high currents

necessary in a assive matrix dislay. $ur new high efficiency material systems are

ideally suited for use in active matrix $%E> dislays! and their high efficiencies

should result in greatly reduced ower consumtion. The T$%E> architecture

ena,les the organic diode! which is laced in each ixel to emit its light uwards

away from the su,strate. This means that the diode can ,e laced over the T;T

,ac"lane! resulting in a ,righter dislay.

OTHER POTENTIAL APPLI ATIONS OF

POLYTRONI S

s well as dislays! there is enormous otential for lastic electronics

in relatively simle logic alications! once the technology ta"es hold. Jsing the

same rocess that roduces electronic ,ac"lanes for dislays! entry into mar"ets

such as electronic ,arcodes 7';)> tags and intelligent ac"aging! currently a

J+NF,illion mar"et! are distinctly ro,a,le. )t is a ,oost to this emerging mar"et

recently ,y ordering H?? million silicon,ased electronic tags for an initial ilot


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roject. #rinted electronics will ,e a "ey ena,ler of intelligent ac"aging and low

cost electronic la,els.

/eyond this! lastic electronics can add value in many diverse mar"ets!

,ut will only do so once the technology has matured. )n one sense the technology

is comlementary to conventional silicon electronics! serving esta,lished ,illion

dollar mar"ets such as electronic dislays and ena,ling new concets such as

electronic la,els! intelligent ,iosensors! disosa,le electronics! flexi,le eaer

and electrotextiles! as well as novelty alications gadgets! gi0mos and games. )t

is li"ely that the ,iggest alications for lastic electronics are yet to ,e

discovered. )n addition we could see lastic ,atteries coming out for low ower

consumtion areas. These could even relace the solar cells the resent technology.

ON LUSION

The overall imact of this technology is li"ely to ,e huge. This is

without dou,t a comletely disrutive technology. )n the same way that the steel

industry moved from integrated wor"s to smaller facilities re6uiring lower caital

intensity! so Cour in"jet rinting of lastic circuits will do the same to the

electronics industry.5 The age of olymers has ,egun! where in the form factor!

flexi,ility and low cost of roduction would result in constant innovation.


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T8) F+() @( P0*+ E0)+('

The economics of direct writing lastic electronics will ensure that the

technology will not end u centred in those countries that have very chea la,our

costs. CAini fa,rication centres will ,e sited next to the customer! as the initial cost

of the rocess will ,e much lower ,y not re6uiting mas"s and ,ig lants5. s for

future there could ,e suly of a comlete lastic electronics ac"age! delivered

through a set of standards! oerating rocedures and licences that ena,le direct

writing of electronic circuits to ta"e lace whenever there is a need or alication

for them. 2hen this comes to ass! there really will ,e chis with everything. %et5s

wait for the cloc" to turn around to enjoy the ,eautiful and interesting alications

of this technologyO.....

BIBLIO"RAPHY

1.www.olymervision.com

F.www.,attcon.com

.www.olytronics.org

.www.olytronicseng.com


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REGISTRATION FORM


26/27

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S*0)7:311.

'esected +ir4Aadam!

s we wish to resent our aer on “ P0+( ” in your esteemed

institution! we have su,mitted our aer for your "ind erusal.

Than"ing &ou!

&ours truly

. D.BHUANESWARI

&

R.>IRUTHIGA

poly tronic s

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