position resolution for the cms barrel pixel detector ... · pdf fileposition resolution for...
TRANSCRIPT
Position resolution for the CMS Barrel Pixel Detector after irradiation
Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy
Enver Alagöz
on behalf of CMS Pixel Testbeam collaboration
11th Topical Seminar on Innovative Particle and Radiation Detectors(IPRD08) 1 - 4 October 2008 Siena, Italy
Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy 2
• 3-D Tracking with 66 M pixels
• Barrel layers at radii: 4.4 cm, 7.3 cm and 10.2 cm
• Pixel cell size: 100x150 μm2
• Pixel sensor thickness: 285 μm
• ~ 1 m2 Silicon in 3.8T fieldpixel module
The CMS Pixel Detector
Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy
Motivations
•At the innermost CMS pixel barrel layer, radiation exposure expected to be 3x1014 neq/cm2/year at the full LHC luminosity (1034 cm-2 s-1)
•For the first time the CMS pixel barrel sensors with the final dimensions (100x150x285 µm3) and the final readout chip were tested in magnetic field.
•Charge collection
•Leakage current and damage rate
•Hit reconstruction algorithm and eta correction
•Analysis procedure
•Position resolution3
Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy
Experimental Setup
• Telescope fully equipped with unirradiated pixel sensors• new PCB for the irradiated samples• Two peltier cooling elements and chiller• Nitrogen gas flushed into the cooling box• 2x6 mm PIN diode trigger
4
beam
Trig
ger
Telescope ROCsTelescope ROCs
DUT
Cool
ing
box
ROC - read-out chip DUT - detector under test
9>F4/(',K>(8&,@#('&590"#?)3# L&45K#M#NO#F4/F4,K&(>5)/#8'#64)7
Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy
Coordinates
!"#$%&'(%&)#*+,&"#-./&(%0#1 2&345#64)7#84989#)8#:;<#6=8)> ?448&,@<#A(8'64/#BC8%<#;CCD D
E48>F#)8#:;#64)7#5&,4E48>F#)8#:;#64)7#5&,4
G4)7H#BIC#J4! F&',9 *97)55#7>58&F54#9()884/&,@0<#;I,9#98/>(8>/4
?)@,48H#?B#*;#9>F4/(',K>(8&,@#('&590"#?)3#L&45K#M#NO#F4/F4,K&(>5)/#8'#64)7
$PQR#2/4S499&, 9&84
:;#)/4)
NO#E>F4/(',K>(8&,@#7)@,48
64)7H
BIC#J4! ! G#L&45K
64)7
G#L&45K
P#L&45K
• Beam line: CERN H2 beam area• 150 GeV π- with 25 ns bunch structure• Helmholtz superconductor coils (max 3T)
5
Verti
cal C
oord
.
Horizontal Coord.
Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy
Bias Voltage [V]
100 150 200 250 300
Ch
arg
e [
MP
V /
10
00
ele
ctr
on
s]
22
22.5
23
23.5
24
24.5
25
25.5
26
26.5
Charge Collection vs Bias
new sensor - total cluster charge
6
Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy 7
Charge Collection vs Fluence
Bias Voltage [V]100 150 200 250 300 350 400 450 500
Ch
arg
e [
MP
V/1
000
ele
ctr
on
s]
15
20
25
30new sensor
-2 cmeq n14 10! = 0.8 "
-2 cmeq n14 10! = 2.2 "
-2 cmeq n14 10! = 6.2 "
-2 cmeq n14 10! = 8.2 "
total cluster charge vs irradiation
Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy
Leakage Current vs Fluence
]-2 cmeq
Fluence [n0 0.2 0.4 0.6 0.8
1510!
Leakag
e C
urr
en
t [A
]
0
5
10
15
20
25
30
-610!
Leakage currents (Ileakage) - at 200V - at 263 K
8
Ileakage ! !
Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy
Leakage Current Damage Rate
]-2 cmeq
Fluence [n0 0.2 0.4 0.6 0.8
1510!
]-1
[A
cm
"
0
10
20
30
40
50-18
10!
9
RD48 (ROSE)
![Acm!1] =Ileakage[A]
Volume[cm3] · ![neqcm!2]
! = (3.99± 0.03)! 10!17Acm!1
independent of fluence as expected
Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy
Vertical Coordinate
Hit Reconstruction
10
xcenter
xhit
Winner
Wx
T1/2
qfirst
qlast
L
xhit = xcenter +qlast ! qfirst
qlast + qfirst|LorentzShift|! 1
2LorentzShift
• Pitch is 100 µm• No rotation α = 0• T is thickness
• Lorentz Shift = T x tan(θL)• Wx = T x tan(α) + Lorentz Shift
•This algorithm is used only for the unirradiated sensor
Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy
Analysis procedure
Cuts:1) Cluster charge < 50000 electrons2) Fiducial cut3) One hit per ROC per event4) Cluster of size 2 pixel for the telescope ROCs5) Cut on the correlation offset
Alignment:7) Least-square fit to 4 points in telescope and extrapolate the prediction from the fit8) Get residuals for the test sensors
11
!total =!
!2telescope + !2
DUT
Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy
Position resolution
χ2
Prob(χ2, 2)
- new sensor - 200V bias- 3T- two pixels- pitch 100 µm
12
Residual [mm]-0.1 -0.05 0 0.05 0.1
0
50
100
150
200 !total ! 9µm
Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy 13
Eta correction
Xhit = XL + F(!) · pitch
F(!) =
! eta!1 "(!)d!
! 1!1 "(!)d!
Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy 14
Position resolution
Residual [mm]-0.1 -0.05 0 0.05 0.1
0
100
200
300 !total ! 10µm - 200V- 3T- two pixels- pitch 100 µm
! = 0.87! 1014neqcm!2
Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy 15
Position resolution
Residual [mm]-0.1 -0.05 0 0.05 0.1
0
50
100
150
200
250
300 - 300V- 3T- two pixels- pitch 100 µm
!total ! 8.5µm
! = 2.2! 1014neqcm!2
Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy 16
Summary
•The CMS pixel barrel sensors with the final dimensions and the final readout chip were tested in magnetic field.
•Charge collection decreases with irradiation and can be increased by applying higher biases
•Leakage currents were measured and damage rate α ≈ α (RD48)
•Hit reconstruction algorithm is used for the unirradiated and eta correction for the irradiated pixels.
•Alignment and tracking has been done
•Residual sigma for the cluster of size 2 pixels at different Vbias:
9 µm (new), 10 µm (0.87x1014 neq cm-2) and 8.5 µm (2.2x1014 neq cm-2)
Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy 17
E. Alagöz1,2 , V. Chiochia1 , T. Rommerskirchen1 , J. Rochet1
S. Dambach2,3 , C. Eggel2,3 , U. Langenegger2 , P. Trüb2,3 , A. Starodumov3
T. Rohe3 , D. Kotlinski3 , B. Meier3, W. Erdmann3
M. Swartz4
1Physik Institut der Universität Zürich (CH), 2 Paul Scherrer Institut (CH), 3 ETH Zürich (CH), 4 Johns Hopkins University (USA)
CMS Pixel Testbeam Collaboration
Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy
Readout
Analog signal from 5 ROCs
Motherboard for module testing (PSI/ETH)program & readout ROCs,embedded 12-bit ADC,64 MB memory buffer
TBM
Data out (USB)
19
Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy
Correlation
! = new sensor : Vbias = 150V : B = 3Tirradiated roc
telescope rocs
20
Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy
Pulse Height Calibration
• PHCalibration Fit function
• 6 Parameters
TS(new) !B = 0 VBias = 150V
Tan (par[0] · ADC) + par[1] · (ADC)3 + par[4] · (ADC)2 + par[2] · ADC + par[3]
21
Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy
Charge Collection vs Bias
22
Bias Voltage [V]
100 150 200 250 300 350 400 450 500
Ch
arg
e [
MP
V / 1
000 e
lectr
on
s]
6
7
8
9
10
11
12
13
14
Irradiated sensor - total cluster charge 8.2 x 1014 neq cm-2
Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy
Hit Maps
! = new sensor : Vbias = 150V : B = 3T
Pixe
l Row
s (10
0 µm
)
Pixel Columns (150 µm)
Nev
ents
/pi
xel
23
Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy
Charge Collection vs Bias
Bias = 75VEntries 1822383
Mean 28.15
RMS 11.48
/ ndf 2! 1.655e+04 / 70
Width 0.004± 1.642
MP 0.01± 22.29
Area 1378± 1.827e+06
GSigma 0.007± 3.833
Total cluster charge [1000 electrons]
0 10 20 30 40 50 60 70 80 90 100
En
trie
s
0
0.02
0.04
0.06
0.08
0.1
0.12
610"
Bias = 75VEntries 1822383
Mean 28.15
RMS 11.48
/ ndf 2! 1.655e+04 / 70
Width 0.004± 1.642
MP 0.01± 22.29
Area 1378± 1.827e+06
GSigma 0.007± 3.833
Bias = 100VEntries 1744069
Mean 29.41
RMS 11.5
/ ndf 2! 8349 / 74
Width 0.004± 1.739
MP 0.01± 23.33
Area 1350± 1.754e+06
GSigma 0.007± 3.376
Total cluster charge [1000 electrons]
0 10 20 30 40 50 60 70 80 90 100
En
trie
s
0
0.02
0.04
0.06
0.08
0.1
0.12
610"
Bias = 100VEntries 1744069
Mean 29.41
RMS 11.5
/ ndf 2! 8349 / 74
Width 0.004± 1.739
MP 0.01± 23.33
Area 1350± 1.754e+06
GSigma 0.007± 3.376
Bias = 150VEntries 815520
Mean 31.4
RMS 11.57
/ ndf 2! 4674 / 80
Width 0.005± 1.929
MP 0.01± 25.06
Area 923± 8.196e+05
GSigma 0.010± 2.811
Total cluster charge [1000 electrons]
0 10 20 30 40 50 60 70 80 90 100
En
trie
s
0
10
20
30
40
50
603
10"
Bias = 150VEntries 815520
Mean 31.4
RMS 11.57
/ ndf 2! 4674 / 80
Width 0.005± 1.929
MP 0.01± 25.06
Area 923± 8.196e+05
GSigma 0.010± 2.811
Bias = 200VEntries 1571424
Mean 32.13
RMS 11.55
/ ndf 2! 1.057e+04 / 82
Width 0.004± 1.964
MP 0.01± 25.78
Area 1278± 1.577e+06
GSigma 0.008± 2.822
Total cluster charge [1000 electrons]
0 10 20 30 40 50 60 70 80 90 100
En
trie
s
0
20
40
60
80
100
310"
Bias = 200VEntries 1571424
Mean 32.13
RMS 11.55
/ ndf 2! 1.057e+04 / 82
Width 0.004± 1.964
MP 0.01± 25.78
Area 1278± 1.577e+06
GSigma 0.008± 2.822
Bias = 250VEntries 496527
Mean 32.17
RMS 11.37
/ ndf 2! 4885 / 83
Width 0.006± 1.893
MP 0.01± 26.01
Area 716± 4.945e+05
GSigma 0.013± 2.516
Total cluster charge [1000 electrons]
0 10 20 30 40 50 60 70 80 90 100
En
trie
s
0
5
10
15
20
25
30
35
310"
Bias = 250VEntries 496527
Mean 32.17
RMS 11.37
/ ndf 2! 4885 / 83
Width 0.006± 1.893
MP 0.01± 26.01
Area 716± 4.945e+05
GSigma 0.013± 2.516
Bias = 300VEntries 498115
Mean 32.36
RMS 11.27
/ ndf 2! 4335 / 83
Width 0.006± 1.894
MP 0.01± 26.22
Area 717± 4.966e+05
GSigma 0.013± 2.525
Total cluster charge [1000 electrons]
0 10 20 30 40 50 60 70 80 90 100
En
trie
s
0
5
10
15
20
25
30
35
310"
Bias = 300VEntries 498115
Mean 32.36
RMS 11.27
/ ndf 2! 4335 / 83
Width 0.006± 1.894
MP 0.01± 26.22
Area 717± 4.966e+05
GSigma 0.013± 2.525
Landau+Gaussian fit to total cluster charge
24