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Position resolution for the CMS Barrel Pixel Detector after irradiation Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy Enver Alagöz on behalf of CMS Pixel Testbeam collaboration 11th Topical Seminar on Innovative Particle and Radiation Detectors (IPRD08) 1 - 4 October 2008 Siena, Italy

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Position resolution for the CMS Barrel Pixel Detector after irradiation

Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy

Enver Alagöz

on behalf of CMS Pixel Testbeam collaboration

11th Topical Seminar on Innovative Particle and Radiation Detectors(IPRD08) 1 - 4 October 2008 Siena, Italy

Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy 2

• 3-D Tracking with 66 M pixels

• Barrel layers at radii: 4.4 cm, 7.3 cm and 10.2 cm

• Pixel cell size: 100x150 μm2

• Pixel sensor thickness: 285 μm

• ~ 1 m2 Silicon in 3.8T fieldpixel module

The CMS Pixel Detector

Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy

Motivations

•At the innermost CMS pixel barrel layer, radiation exposure expected to be 3x1014 neq/cm2/year at the full LHC luminosity (1034 cm-2 s-1)

•For the first time the CMS pixel barrel sensors with the final dimensions (100x150x285 µm3) and the final readout chip were tested in magnetic field.

•Charge collection

•Leakage current and damage rate

•Hit reconstruction algorithm and eta correction

•Analysis procedure

•Position resolution3

Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy

Experimental Setup

• Telescope fully equipped with unirradiated pixel sensors• new PCB for the irradiated samples• Two peltier cooling elements and chiller• Nitrogen gas flushed into the cooling box• 2x6 mm PIN diode trigger

4

beam

Trig

ger

Telescope ROCsTelescope ROCs

DUT

Cool

ing

box

ROC - read-out chip DUT - detector under test

9>F4/(',K>(8&,@#('&590"#?)3# L&45K#M#NO#F4/F4,K&(>5)/#8'#64)7

Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy

Coordinates

!"#$%&'(%&)#*+,&"#-./&(%0#1 2&345#64)7#84989#)8#:;<#6=8)> ?448&,@<#A(8'64/#BC8%<#;CCD D

E48>F#)8#:;#64)7#5&,4E48>F#)8#:;#64)7#5&,4

G4)7H#BIC#J4! F&',9 *97)55#7>58&F54#9()884/&,@0<#;I,9#98/>(8>/4

?)@,48H#?B#*;#9>F4/(',K>(8&,@#('&590"#?)3#L&45K#M#NO#F4/F4,K&(>5)/#8'#64)7

$PQR#2/4S499&, 9&84

:;#)/4)

NO#E>F4/(',K>(8&,@#7)@,48

64)7H

BIC#J4! ! G#L&45K

64)7

G#L&45K

P#L&45K

• Beam line: CERN H2 beam area• 150 GeV π- with 25 ns bunch structure• Helmholtz superconductor coils (max 3T)

5

Verti

cal C

oord

.

Horizontal Coord.

Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy

Bias Voltage [V]

100 150 200 250 300

Ch

arg

e [

MP

V /

10

00

ele

ctr

on

s]

22

22.5

23

23.5

24

24.5

25

25.5

26

26.5

Charge Collection vs Bias

new sensor - total cluster charge

6

Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy 7

Charge Collection vs Fluence

Bias Voltage [V]100 150 200 250 300 350 400 450 500

Ch

arg

e [

MP

V/1

000

ele

ctr

on

s]

15

20

25

30new sensor

-2 cmeq n14 10! = 0.8 "

-2 cmeq n14 10! = 2.2 "

-2 cmeq n14 10! = 6.2 "

-2 cmeq n14 10! = 8.2 "

total cluster charge vs irradiation

Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy

Leakage Current vs Fluence

]-2 cmeq

Fluence [n0 0.2 0.4 0.6 0.8

1510!

Leakag

e C

urr

en

t [A

]

0

5

10

15

20

25

30

-610!

Leakage currents (Ileakage) - at 200V - at 263 K

8

Ileakage ! !

Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy

Leakage Current Damage Rate

]-2 cmeq

Fluence [n0 0.2 0.4 0.6 0.8

1510!

]-1

[A

cm

"

0

10

20

30

40

50-18

10!

9

RD48 (ROSE)

![Acm!1] =Ileakage[A]

Volume[cm3] · ![neqcm!2]

! = (3.99± 0.03)! 10!17Acm!1

independent of fluence as expected

Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy

Vertical Coordinate

Hit Reconstruction

10

xcenter

xhit

Winner

Wx

T1/2

qfirst

qlast

L

xhit = xcenter +qlast ! qfirst

qlast + qfirst|LorentzShift|! 1

2LorentzShift

• Pitch is 100 µm• No rotation α = 0• T is thickness

• Lorentz Shift = T x tan(θL)• Wx = T x tan(α) + Lorentz Shift

•This algorithm is used only for the unirradiated sensor

Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy

Analysis procedure

Cuts:1) Cluster charge < 50000 electrons2) Fiducial cut3) One hit per ROC per event4) Cluster of size 2 pixel for the telescope ROCs5) Cut on the correlation offset

Alignment:7) Least-square fit to 4 points in telescope and extrapolate the prediction from the fit8) Get residuals for the test sensors

11

!total =!

!2telescope + !2

DUT

Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy

Position resolution

χ2

Prob(χ2, 2)

- new sensor - 200V bias- 3T- two pixels- pitch 100 µm

12

Residual [mm]-0.1 -0.05 0 0.05 0.1

0

50

100

150

200 !total ! 9µm

Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy 13

Eta correction

Xhit = XL + F(!) · pitch

F(!) =

! eta!1 "(!)d!

! 1!1 "(!)d!

Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy 14

Position resolution

Residual [mm]-0.1 -0.05 0 0.05 0.1

0

100

200

300 !total ! 10µm - 200V- 3T- two pixels- pitch 100 µm

! = 0.87! 1014neqcm!2

Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy 15

Position resolution

Residual [mm]-0.1 -0.05 0 0.05 0.1

0

50

100

150

200

250

300 - 300V- 3T- two pixels- pitch 100 µm

!total ! 8.5µm

! = 2.2! 1014neqcm!2

Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy 16

Summary

•The CMS pixel barrel sensors with the final dimensions and the final readout chip were tested in magnetic field.

•Charge collection decreases with irradiation and can be increased by applying higher biases

•Leakage currents were measured and damage rate α ≈ α (RD48)

•Hit reconstruction algorithm is used for the unirradiated and eta correction for the irradiated pixels.

•Alignment and tracking has been done

•Residual sigma for the cluster of size 2 pixels at different Vbias:

9 µm (new), 10 µm (0.87x1014 neq cm-2) and 8.5 µm (2.2x1014 neq cm-2)

Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy 17

E. Alagöz1,2 , V. Chiochia1 , T. Rommerskirchen1 , J. Rochet1

S. Dambach2,3 , C. Eggel2,3 , U. Langenegger2 , P. Trüb2,3 , A. Starodumov3

T. Rohe3 , D. Kotlinski3 , B. Meier3, W. Erdmann3

M. Swartz4

1Physik Institut der Universität Zürich (CH), 2 Paul Scherrer Institut (CH), 3 ETH Zürich (CH), 4 Johns Hopkins University (USA)

CMS Pixel Testbeam Collaboration

Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy

BACKUP SLIDES

18

Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy

Readout

Analog signal from 5 ROCs

Motherboard for module testing (PSI/ETH)program & readout ROCs,embedded 12-bit ADC,64 MB memory buffer

TBM

Data out (USB)

19

Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy

Correlation

! = new sensor : Vbias = 150V : B = 3Tirradiated roc

telescope rocs

20

Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy

Pulse Height Calibration

• PHCalibration Fit function

• 6 Parameters

TS(new) !B = 0 VBias = 150V

Tan (par[0] · ADC) + par[1] · (ADC)3 + par[4] · (ADC)2 + par[2] · ADC + par[3]

21

Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy

Charge Collection vs Bias

22

Bias Voltage [V]

100 150 200 250 300 350 400 450 500

Ch

arg

e [

MP

V / 1

000 e

lectr

on

s]

6

7

8

9

10

11

12

13

14

Irradiated sensor - total cluster charge 8.2 x 1014 neq cm-2

Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy

Hit Maps

! = new sensor : Vbias = 150V : B = 3T

Pixe

l Row

s (10

0 µm

)

Pixel Columns (150 µm)

Nev

ents

/pi

xel

23

Enver Alagoz, IPRD08, 1-4 October 2008, Siena, Italy

Charge Collection vs Bias

Bias = 75VEntries 1822383

Mean 28.15

RMS 11.48

/ ndf 2! 1.655e+04 / 70

Width 0.004± 1.642

MP 0.01± 22.29

Area 1378± 1.827e+06

GSigma 0.007± 3.833

Total cluster charge [1000 electrons]

0 10 20 30 40 50 60 70 80 90 100

En

trie

s

0

0.02

0.04

0.06

0.08

0.1

0.12

610"

Bias = 75VEntries 1822383

Mean 28.15

RMS 11.48

/ ndf 2! 1.655e+04 / 70

Width 0.004± 1.642

MP 0.01± 22.29

Area 1378± 1.827e+06

GSigma 0.007± 3.833

Bias = 100VEntries 1744069

Mean 29.41

RMS 11.5

/ ndf 2! 8349 / 74

Width 0.004± 1.739

MP 0.01± 23.33

Area 1350± 1.754e+06

GSigma 0.007± 3.376

Total cluster charge [1000 electrons]

0 10 20 30 40 50 60 70 80 90 100

En

trie

s

0

0.02

0.04

0.06

0.08

0.1

0.12

610"

Bias = 100VEntries 1744069

Mean 29.41

RMS 11.5

/ ndf 2! 8349 / 74

Width 0.004± 1.739

MP 0.01± 23.33

Area 1350± 1.754e+06

GSigma 0.007± 3.376

Bias = 150VEntries 815520

Mean 31.4

RMS 11.57

/ ndf 2! 4674 / 80

Width 0.005± 1.929

MP 0.01± 25.06

Area 923± 8.196e+05

GSigma 0.010± 2.811

Total cluster charge [1000 electrons]

0 10 20 30 40 50 60 70 80 90 100

En

trie

s

0

10

20

30

40

50

603

10"

Bias = 150VEntries 815520

Mean 31.4

RMS 11.57

/ ndf 2! 4674 / 80

Width 0.005± 1.929

MP 0.01± 25.06

Area 923± 8.196e+05

GSigma 0.010± 2.811

Bias = 200VEntries 1571424

Mean 32.13

RMS 11.55

/ ndf 2! 1.057e+04 / 82

Width 0.004± 1.964

MP 0.01± 25.78

Area 1278± 1.577e+06

GSigma 0.008± 2.822

Total cluster charge [1000 electrons]

0 10 20 30 40 50 60 70 80 90 100

En

trie

s

0

20

40

60

80

100

310"

Bias = 200VEntries 1571424

Mean 32.13

RMS 11.55

/ ndf 2! 1.057e+04 / 82

Width 0.004± 1.964

MP 0.01± 25.78

Area 1278± 1.577e+06

GSigma 0.008± 2.822

Bias = 250VEntries 496527

Mean 32.17

RMS 11.37

/ ndf 2! 4885 / 83

Width 0.006± 1.893

MP 0.01± 26.01

Area 716± 4.945e+05

GSigma 0.013± 2.516

Total cluster charge [1000 electrons]

0 10 20 30 40 50 60 70 80 90 100

En

trie

s

0

5

10

15

20

25

30

35

310"

Bias = 250VEntries 496527

Mean 32.17

RMS 11.37

/ ndf 2! 4885 / 83

Width 0.006± 1.893

MP 0.01± 26.01

Area 716± 4.945e+05

GSigma 0.013± 2.516

Bias = 300VEntries 498115

Mean 32.36

RMS 11.27

/ ndf 2! 4335 / 83

Width 0.006± 1.894

MP 0.01± 26.22

Area 717± 4.966e+05

GSigma 0.013± 2.525

Total cluster charge [1000 electrons]

0 10 20 30 40 50 60 70 80 90 100

En

trie

s

0

5

10

15

20

25

30

35

310"

Bias = 300VEntries 498115

Mean 32.36

RMS 11.27

/ ndf 2! 4335 / 83

Width 0.006± 1.894

MP 0.01± 26.22

Area 717± 4.966e+05

GSigma 0.013± 2.525

Landau+Gaussian fit to total cluster charge

24