SeminarPaper review

報告者 : W. C. Jian

Improved performance of 325-nm emission AlGaN ultraviolet light emitting diodes

A. Chitnis, J. P. Zhang, V. Adivarahan, M. Shatalov, S. Wu, R. Pachipulusu, V. Mandavilli, and M. Asif Khan

Appl. Phys. Lett., Vol. 82, No. 16, 21 April 2003

Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75Nquantum-well light-emitting diodes with Mg-doped superlattice layers

A. Kinoshita, H. Hirayama, M. Ainoya, and Y. Aoyagi Appl. Phys. Lett., Vol. 77, No. 2, 10 July 2000

Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer

Hideki Hirayama, Yusuke Tsukada, Tetsutoshi Maeda, and Norihiko Kamata

Applied Physics Express 3 (2010) 031002

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