sims presentation sajan suraj karan
TRANSCRIPT
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MEL:471 Material characterization techniques
Secondary ion mass spectrometry (SIMS)
Presented by: Sajan meena(2010ME1118)
Suraj karan (2012MEB1117)
Course instructor:Dr.Ravi mohan Prasad
28 March 2014
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Contents
Introduction
Fundamental principle of SIMS
Instrumentation
Operation mode of SIMS
Advantage & limitation of SIMS
Application of SIMS
Comparison to other analysis techniques
Historical background
References
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Introduction
Image 1: SIMS[3]
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Fundamental principle of SIMS
Image 2:working principle of SIMS[3]
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Secondary ion yield :Elemental effect
Image 3: Elemental effect on sputter yield [4]
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Instrumentation
(1/2)High energy (usually severalKev) ions are supplied by an ion gun
(3)Focused on to the sample
(4)Which ionizes and sputters
some atoms of the surface
(5)These secondary ions are thencollected by ion lenses
(6)Filter according to atomic mass
(7,top),projected onto an electronmultiplier
(7,bottom),Faraday cup
(8)CCD screen
Image5: Instrumentation
in typical SIMS instrument
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Primary ion source
(A) Duoplasmatrons (B) Cs ion source
Image 6: Ion source in SIMS[6]
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Mass analyzers(A)Quadrupole mass analyzer
(B)Time of flight mass analyzer
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Operation mode of SIMS
Static SIMS
In this mode pulsed ion beamand TOF mass analyzer is used
Used to study the compositionof the outermost atomic layers,including the nature andproperties of adsorbed layers
Applications of static SIMS areanalysis of thin films, polymers,biomaterials, and the detectionof trace elements insemiconductors and geologicalsamples
Dynamic SIMS
It use high dose of primary ionbeam and usually quadrupoleis used.
It is used for the determinationof depth profiles.
For example dopantdistribution in semiconductor.
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SIMS Imaging
By rastering a finely focused ion beam over thesurface, a mass resolved secondary ion imagescan also be obtained.
Imaging is possible in both static and dynamicmodes.
LMIS achieves the best spatial resolution.
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Advantage & limitation of SIMSAdvantage:
Elements from H to U can be detected
Most elements may be detected down toconcentrations of 1ppm or 1ppb
Little sample preparation is required Low material consumption in sputtering process
Depth profiling analysis up to few m depth
Limitation: Sample must be compatible with UHV
Sputtering process is poorly understood
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Application of SIMS To determine the elemental, isotopic, or
molecular composition of the surface Depth profiling (analysis of concentration
variation as a function of depth)
Analysis of trace element in solid materials
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Comparison to other techniques
Elemental sensitivity is greater than XPS,AES,XRF
XPS and AES do not detect H,and XRF has verypoor sensitivity to Li, and Be.
Surface specificity is greater than XPS, AES and
XRF. Imaging SIMS contain topographic contrast and
provide surface visualization, as in SEM but with
lower spatial resolution.
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Historical development of SIMS
1910
J.J.Thomson observed release of positive ions and neutralatoms from a solid surface induced by ion bombardment
1949 First prototype experiments on SIMS was conducted by Herzog
1950
Honig constructed a SIMS instrument at RCA Laboratories inPrinceton, New Jersey
1970
K. Wittmaack and C. Magee developed SIMS instruments
equipped with Quadrupole mass analysers(dynamic SIMS)
1975
Benninghoven developed SIMS instrument with time-of-flightmass spectrometers (static SIMS)
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References[1] http://en.wikipedia.org/wiki/Secondary_ion_mass_spectrometry
[2] http://www.ifw-dresden.de/institutes/ikm/departments/micro[3] http://www.chem.qmul.ac.uk/surfaces/scc/scat5_5.htm
[4] http://www.geos.ed.ac.uk/facilities/ionprobe/SIMS4.pdf
[5] http://www.minisims.com/docs/introduct ion_to_sims.pdf
[6]http://serc.carleton.edu/research_education/geochemsheets/techniques
[7] http://www.chm.bris.ac.uk/ms/theory/detection.html
http://en.wikipedia.org/wiki/Secondary_ion_mass_spectrometryhttp://www.ifw-dresden.de/institutes/ikm/departments/microhttp://www.ifw-dresden.de/institutes/ikm/departments/microhttp://www.chem.qmul.ac.uk/surfaces/scc/scat5_5.htmhttp://www.chem.qmul.ac.uk/surfaces/scc/scat5_5.htmhttp://www.geos.ed.ac.uk/facilities/ionprobe/SIMS4.pdfhttp://www.geos.ed.ac.uk/facilities/ionprobe/SIMS4.pdfhttp://www.minisims.com/docs/introduction_to_sims.pdfhttp://www.minisims.com/docs/introduction_to_sims.pdfhttp://www.chm.bris.ac.uk/ms/theory/detection.htmlhttp://www.chm.bris.ac.uk/ms/theory/detection.htmlhttp://www.chm.bris.ac.uk/ms/theory/detection.htmlhttp://www.minisims.com/docs/introduction_to_sims.pdfhttp://www.geos.ed.ac.uk/facilities/ionprobe/SIMS4.pdfhttp://www.chem.qmul.ac.uk/surfaces/scc/scat5_5.htmhttp://www.ifw-dresden.de/institutes/ikm/departments/microhttp://en.wikipedia.org/wiki/Secondary_ion_mass_spectrometry -
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