smd type ic transistorssmd type ic 1 transistors features fast switching speed. high gain-bandwidth...
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SMD Type IC
www.kexin.com.cn 1
SMD Type Transistors
FeaturesFast switching speed.
High gain-bandwidth product.
Low saturation voltage.
Absolute Maximum Ratings Ta = 25
tinUgnitaRlobmySretemaraP
Vegatlovesab-rotcelloC CBO -40 V
Vegatlovrettime-rotcelloC CEO -20 V
Vegatlovesab-rettimE EBO -5 V
ItnerrucrotcelloC C -150 mA
I)eslup(tnerrucrotcelloC CP -300 mA
ItnerrucesaB B -30 mA
PnoitapissidrotcelloC C 200 mW
TerutarepmetnoitcnuJ j 150
TerutarepmetegarotS stg -55 to +150
0.4 +0.1-0.1
2.9 +0.1-0.1
0.95 +0.1-0.1
1.9 +0.1-0.1
2.4
+0.1
-0.1
1.3
+0.1
-0.1
0-0.1
0.38
+0.1
-0.1
0.97
+0.1
-0.1
0.55
0.4
1.Base
2.Emitter
3.collector
1 2
3
Unit: mmSOT-23
0.1 +0.05-0.01
PNP Transistors 2SA1607
● Complementary to 2SC4168
Electrical Characteristics Ta = 25Parameter Symbol Test Conditions Min Typ Max Unit
Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -40
Collector- emitter breakdown voltage VCEO Ic= -1 mA， RBE=∞ -20
Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5
Collector-base cut-off current ICBO VCB= -30 V , IE=0 -100
Emitter cut-off current IEBO VEB= -4V , IC=0 -100
Collector-emitter saturation voltage VCE(sat) IC=-10 mA, IB=- 1mA -0.07 -0.2
Base - emitter saturation voltage VBE(sat) IC=-10 mA, IB=- 1mA -0.75 -1
DC current gain hFE VCE= -1V, IC= -10mA 60 180
Delay time td 14 20
Rise time tr 11 20
Storage time ts 80 180
Fall time tf 16 25
Output capacitance Cob VCE= -10V,f=100MHz 2.9 pF
Transition frequency fT VCE= -10V, IC= -1mA 400 MHz
See specified Test Circuit
V
V
ns
nA
Marking
Rank 3 4
hFE 60 120 90 180
YL3 YL4
■ Classification of hfe
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SMD Type
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Transistors
PNP Transistors 2SA1607
■ Typical Characterisitics
--0.2mA
--0.4mA
--0.6mA
--0.8mA--1.0m
A
--1.2m
A
--100
--80
--60
--40
--20
00.2--6.1--8.0--0 2.1--4.0--
--20
--16
--12
--8
--4
002--61--8--0 21--4--
IC -- VCE
IB=0
2SA1607
2SA1607IC -- VCE
--80uA
--40uA
--100uA
--60uA
--120uA
IB=0
--20uA
Col
lect
or C
urre
nt,I
C–m
A
Collector-to-Emitter Voltage, VCE – V
Col
lect
or C
urre
nt,I
C–m
A
Collector-to-Emitter Voltage, VCE – V
Ta=75 C
--25 C
hFE -- IC2SA1607VCE=--1V
2SA1607VCE=--1V
100
10
7
1000
7
5
3
2
5
3
2
--1.0 32 5--0.1 32 5 --10 32 57 377 2--100
Ta=7
5C
25C
--25
C
--160
--140
--120
--20
--100
--80
--60
--40
00 --0.2 --0.4 --0.6 --0.8 --1.2--1.0
IC -- VBE
25 C
Col
lect
or C
urre
nt,I
C–m
A
Base-to-Emitter Voltage, VBE – V
DC
Cur
rent
Gai
n,h F
E
Collector Current, IC –mA
。 。 。
。。
。
2SA1607VCE=--10V
fT -- IC
3
100
2
2
5
7
1000
7
5
377 2 5 223 5 33--1.0 --10 7 --100
Gai
n-B
andw
idth
Pro
duct
,fT
–M
Hz
Collector Current, IC –mA
Cob -- VCB
3
2
2
7
5
7
5
10
1.0
--1.07 3 --102 7 35 2 75
2SA1607f=1MHz
Out
put C
apac
itanc
e, C
ob–
pF
Collector-to-Base Voltage, VCB -- V
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SMD Type
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Transistors
.
PNP Transistors 2SA1607
■ Typical Characterisitics
01--0.1-- 2 3 5 7 2 3 5 7 2--100
--1.075
3
2
3
2
75
3
2
--0.1
--0.01
VBE(sat)
VCE(sat)
VCE(sat), VBE(sat) -- IC2SA1607IC / IB=10
Col
lect
or-to
-Em
itter
Sat
urat
ion
Vol
tage
,VC
E(sa
t)–
VB
ase
to-E
mitt
er S
atur
atio
n V
olta
ge,V
BE
(sat
)–
V
Collector Current, IC –mA
100
10
001--01--0.1--
75
7
5
1000
7
5
3
2
3
2
2 3 5 7 2 3 5 7 2 3
SW Time -- IC
Switc
hing
Tim
e, S
W T
ime
-- n
s
2SA1607VCC=--10V
IC=5IB1=--5IB2
tstg
tftr
td
Collector Current, IC –mA
Switching Time Test Circuit
VR
VCC=10VVBE=--5V
5IB1= --5IB2= IC=50mA
+ +50
1k
5k 2kINPUT OUTPUTRB
100 F 470 F
PW=10 sIB1D.C. 2.5%
Tr. Tf=1ns
For PNP, the polarity is reversed.
IB2
Col
lect
or D
issi
patio
n, P
C--
mW
Ambient Temperature, Ta -- C
0
240
200
120
80
160
40
20 060 40 80 100 140120 160
PC -- Ta2SA1607