SPring-8

SR-TXRF

1 2 3 4 5 6 7

1 2 3 4 5 6 7SES

SPring-8BL16XUX2

SSD)XTXRFSSD

X2

SDD3SSD

SPring-8XBL16XUBL16B2

SDD5mm2Ge-SSDEG & G, ORTECIGLET-111455

6mCu4X1011atoms/cm2Mn,

Co, Ni, CuSiX12keVSi0.05

SDDSSDXCuKaXX

AlSDD40,00050,000cpsSSD

8,000cps15%

SDDSSDMn, Co, Ni, CuSiTXRFSDD10atoms/cm2

SSDSiSDD

SSD1TXRF

X

1.G

HP http://sunbeam.spring8.or.jp/

2. N. Awaji et al, Jpn. J. Appl. Phys., 39(2000)L1252. 3. L. Struder et al, Microsco. Microanal., 4(1999)622.

0

10000

20000

30000

40000

50000

60000

70000

0 1000 2000 3000 4000 5000 6000

Io / cps

If of

Cu

Ka

/ cp

s

SDD

Ge SSDDead time was 15%at If = 8,000 cps.

SDDSSDXX

1

10

100

1000

10000

100000

1000000

0 2 4 6 8 10 12 14 16

XRF Energy / keV

Inte

nsit

y : c

ount

s(10

00se

c)

Si

MnCo Ni Cu

Zn

Ge SSD : Cu LLD=2.3X109atoms/cm2

Ar

SDD: Cu LLD=3.9X109atoms/cm2

SDDSSDSiTXRF

SPring-8-BL16XUXSSDXTXRFSSDX

SDDSSD

SDDGe-SSDX

SDDGe-SSD SDDX

SDD

SDD

Ge-SSD

SDD

SSD

BL16XUBM-BL10100

BLTXRF SDD Ge-SSD 6BU

TXRF 1000130cm1000DipTXRF

XX

X

X

LiF(200), LiF(220)PET(002), TAP(001)2d=80,160

X

X

SDDSSD

CuKaSDDGe-SSD ~ Ag Shaping time

SDD +Kapton 50m

SDD

CuKaSDDSSD

SDD4~5cps Ge-SSD8cps15%

Fig CuKaSDDSSD

0

10000

20000

30000

40000

50000

60000

70000

0 1000 2000 3000 4000 5000 6000

Io / cps

If of

Cu

Ka

/ cp

s

SDD

Ge SSDDead time was 15%at If = 8,000 cps.

TXRFSDDSSD4E11 Mn,Co,Ni,Cu on Si

SDD109atoms/cm2SSD

Fig SDDSSDSiTXRF

1

10

100

1000

10000

100000

1000000

0 2 4 6 8 10 12 14 16

XRF Energy / keV

Inte

nsity

: co

unts

(100

0sec

)

Si

Mn CoNi

Cu

Zn

Ge SSD : Cu LLD=2.3X109atoms/cm2

Ar

SDD: Cu LLD=3.9X109atoms/cm2

Mn ~ Ag

Fig. Relative Sensitivity of SDD against SSD

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

0 5 10 1 5 20 2 5

X-ray Emission Energy : keV

Rel

ativ

e S

ensi

tivi

ty o

f S

DD

aga

inst

SS

D

Mn

Co Ni

Y Mo

AgExcited by 26.8 keV

Excited by 10 keV

Co,Ni7keV20

Y,Mo,Ag1522keV6070

Fig XRF spectrum of 4E11 Mn,Co,Ni,Cu on Si

1.0E+00

1.0E+01

1.0E+02

1.0E+03

1.0E+04

1.0E+05

1.0E+06

0 2000 4000 6000 8000 10000 12000 14000 16000 18000

hv / eV

Inte

nsity

/ co

unts

con

vert

ed t

o10

00se

c m

easu

rem

ents

XRF

BG

LLD

LLD of Cu : 1.1E10 atoms/cm2

LLD of Cu : 3.9E9 atoms/cm2

XX=01717mm

Y

W wire : 100 um

Si wafer

Fig. W wire on Si wafer

W-La (counts), Y=-5.7mm

0

20000

40000

60000

80000

100000

120000

140000

160000

180000

-10 -5 0 5 10 15 20 25X (mm)

W-La (counts), X=0mm

0

200000

400000

600000

800000

1000000

1200000

1400000

-6.5 -6 -5.5 -5 -4.5 -4Y (mm)

XRF

Kapton50m

SiBG

LLD

LLD of Cu : 5.7E9 atoms/cm2

LLD of Cu : 3.9E9 atoms/cm2

Fig XRF spectrum of 4E11 Mn,Co,Ni,Cu on Si

1.0E+00

1.0E+01

1.0E+02

1.0E+03

1.0E+04

1.0E+05

1.0E+06

0 2000 4000 6000 8000 10000 12000 14000 16000 18000

hv / eV

Inte

nsity

/ co

unts

con

vert

ed t

o10

00se

c m

easu

rem

ents

LLD

LLD

Fig Length(Sample-SDD) vs Cu LLD

3.0E+09

4.0E+09

5.0E+09

6.0E+09

7.0E+09

8.0E+09

9.0E+09

1.0E+10

50 70 90 110 130 150 170 190 210 230 250

Length / mm

Cu

LLD

( a

tom

s/cm

2 )

0

50

100

150

200

250

300

350

Inte

nsity

of C

u Ka

(BG

) /

coun

tsCu Ka

BG of Cu Ka

with Collimator

Cu LLD

4E11 Mn, Co, Ni, Cu on Si

SDD

FWHM,Live timeShaping time

LLD of Cu : 2X1011atoms/cm2

Shaping time100FWHM

Shaping timeLive time

Shaping time100200

Fig.Live timeShaping time

0

50

100

150

200

250

0 50 100 150 200 250 300 350

Shaping time

CuK

a FW

HM

eV

80

82

84

86

88

90

92

94

96

98

100

Live

tim

e : %

2E13 Mn, Co, Ni, Cu on Si

SDD109atoms/cm2SSDSDDSSDXTXRF

SDDX5mm210mm2SDDSDDXBL40XU

SDDSSDSi SB