stacked heterogeneous integration (mems on lsi) …...stacked heterogeneous integration (mems on...
TRANSCRIPT
Stacked heterogeneous integration (MEMS on LSI)
and open collaboration
Masayoshi Esashi (江刺正喜)
MEMS Core Co. Ltd. (CTO)
Micro System Integration Center (μSIC), Tohoku Univ.
1. Introduction
2. Heterogeneous integration (MEMS on LSI)
3. Open collaboration
(Hands-on access fabrication facility and MEMS showroom)
SITRI Day
(2019/11/12) 1
2
ISFET (Ion Sensitive Field Effect Transistor)(wafer process for reliable assembly)
(M.Esashi & T.Matsuo, Supplement to the J.J.A.P.,44 (1975) 339)
(T.Matsuo, M.Esashi, K.Iinuma, Tohoku
region meeting of Electrical Eng.(1971))
50µm
10th Heritage, IEEJ(2017)
3Catheter pH, PCO2
monitor (Kurare, Nihon Kohden) (1983)
(K. Shimada (Kurare), M. Esashi
and T. Matsuo et.al.: Application of
catheter-tip I.S.F.E.T. for continuous
in vivo measurement, Med. & Biol.
Eng. & Comput., Vol.18, No.11,
pp.741-745 (1980))
4
Mask aligner Double-side aligner
Oxidation, diffusion furnace Selective etching of Si3N4 and Si
Home-made semiconductor facility in 1975
5
(M.Esashi, Experiences of LSI design, prototyping and education, Convention of IEEJ (1984))
(M.Esashi & M.Ohtomo, Fabrication of functional tester for LSI, Tohoku convention of IEEJ (1984))
Graphic editor programed using
Fortran (I learned programming)
Functional tester
was made in house
(I learned digital
circuit)
Text book, M.Esashi “Fundamentals
of integrated circuit design” (1986)
(in Japanese)
Implantable telemetry CMOSIC(H.Seo, M.Esashi and T.Matsuo, Frontiers of
Medical and Biological Engineering, 1 (1989) 319) 6
(M.Esashi et.al., Technical report on semiconductor and transistor, IEC,SSD85-51, (1985))
Parallel image processor using custom made IC for 2D barrel shifter
Example of parallel image processing
(M.Esashi et.al., Technical report on semiconductor and
transistor, IEC,SSD85-51,(1985))
7
8
MEMS process facility for 20 mm waferMany process equipment have been made in house.
Simple and basic equipment are suitable for training people who have experiences of all the process steps and for developing new devices taking advantages of process flexibility.
The facility has been shared by many laboratories.
130 companies dispatched researchers (full time, 2years).
Unique facility like toy
for MEMS prototyping
9
Dispatched researchers from company (1991-2002),
130 companies (1990-2013)
10
Resonating gyroscope (yaw rate sensor) and
accelerometer for vehicle stability control
1992-1997
Two researchers from Toyota
stayed in Tohoku University for
collaborative development of
vibrating gyroscope
(M.Nagao et.al.,SAE World Congress, Detroit, (2004) 2004-01-1113)
Yaw rate sensor has been produced in Toyota since 2003
and used in more than 1 million cars.
11
Resonating gyroscope
fabricated using Si deep RIE
Si deep RIE system(M.Takinami, K.Minami and M.Esashi, 11th Sensor symposium, (1992),15-18)
(J.Choi, K.Minami and M.Esashi, Microsystem
Technologies, 2, 4 (1996) 186-199)
12
Rotational gyroscope levitated
electrostatically using high speed
digital signal control
MESAG-100 (Micro Electrostatically Suspended Accelerometer Gyro)(Simultaneous measurement of 2 axes rotation and 3 axes acceleration)
(T.Murakoshi, Y.Endo, K.Sigeru, S.Nakamura and M.Esashi, Jpn. J. Appli. Phys., 42, Part1
No.4B (2003) 2468-2472)
Rotor diameter1.5mm 74,000rpm
13
Application of the electrostatically levitated gyro
to motion logger used for subways in Tokyo
14
Ranging imager for
safety systems and
other applications
(T.Ishikawa,H.Inomata : Japan Signal
Technical Report, 33, 1 (2009) 41)
2-axes optical scanner (Nippon
Signal)
(N.Asada (Nippon signal), M.Esashi et.al.,
IEEE Trans. on Magnetics, 30 (1994) 4647)
Ebisu station (platform doors
using the ranging imager)
3D imager (LIDAR)
for autonomous
drive
15
(Y.Matsumoto, S.Shoji, M.Esashi, 22nd Conf. on Solid State Devices and Materials (1990) 701)
Integrated capacitive pressure sensor (Toyoda Machine Works)
Wafer level
packaging
16
Integrated capacitive pressure sensor(Y.Matsumoto, S.Shoji, M.Esashi, 22nd Conf. on Solid State Devices and Materials (1990) 701)
17
Diaphragm vacuum gage (Canon ANELVA)
Vacuum packaging
(H. Miyashita and Y. Kitamura : Micromachined capacitive diaphragm, gauge,
ANELVA Technical Report, 11, pp.37-41 (2005) (in Japanese))
Canon Anelva Inc.
The getter absorbs oxygen gas generated by
an electrochemical decomposition of glass
during anodic bonding process.
18
MEMS switch factory(Advantest components (Sendai))
MEMS switch for LSI tester(Advantest)
(A.Nakamura (Advantest), M.Esashi et.al.,
Advantest Technical Report, 22 (2004), 9-16)
Immune to electrostatic discharge up to 1000V
Wide frequency range (DC~10GHz)
19
MEMS have moving parts → Direct
molding with plastics can not be
done.
Wafer level packaging
→ small size (chip size encapsulation,
suitable for surface mounting)
→ high yield (protection of MEMS
structures during dicing)
→ high reliability (hermetic sealing)
→ low cost (minimal investment for
assembly, no use of expensive
ceramic packages etc.)
⇒ 70% cost reduction
(M.Esashi, J of Micromechanics and Microengineering,18 (2008) 073001)
20
(S.Kobayashi & M.Esashi, Technical Digest of the 9th Sensor Symposium,(1990),137)
Common 2 wires tactile sensor array (polling type)
(1,000 Tr./chip in our lab., 1,000,000 Tr./chip in company in 1990, 10,000,000,000
Tr./chip in 2018)
21
1. Introduction
2. Heterogeneous integration (MEMS on LSI)
3. Open collaboration
(Hands-on access fabrication facility and MEMS showroom)
Tactile sensor network for robot (event driven type)
(M.Muroyama, M.Makihata, M.Esashi et al., Smart Systems Integration (SSI) 2014, (2014))
2.4mm
22
LSI wafer shared by 16
companies and 10 laboratories
23
(M.Muroyama, M.Makihata et al., Smart Systems Integration (SSI) 2014, Vienna, Austria (2014, March 26))
Tactile sensor network(Collaborators, Toyota, Toyota
Central Res. Lab.)
Real time system using packet communication
24
Concept of the heterogeneous integration by the wafer-level transfer
(M.Esashi and S.Tanaka : Stacked Integration of MEMS on LSI, Micromachines
2016, 7(8), 137; doi: 10.3390/mi7080137]
25
Heterogeneous integration
(a) Surface
micromachining
(Limitation in
MEMS process)
(b) Assembly of
packaged MEMS and LSI
(Limitation in
interconnection)
(c) Transfer of MEMS
on LSI
(d) Interconnection
Between MEMS and
LSI with Through Si Via
(TSV)
(M.Esashi and S.Tanaka, Micromachines 2016, 7(8), 137; doi: 10.3390/mi7080137)
26
Multi SAW (Surface Acoustic Wave) filters on LSI by selective transfer
(S. Tanaka, M. Yoshida, H. Hirano and M. Esashi, 2012 IEEE International Ultrasonics
Symposium (2012) p.1047 ).
Selective transfer process by laser debonding
Selective laser de-bonding
(H.Hirano, T.Kimura, I.P.Koutsaroff, M.Kodato, K.Hashimoto, M.Esashi and S.Tanaka, J. of
Micromech. Microeng., 23 (2013) 025005)
Tunable SAW filter using ferroelectric varactor
27
Film transfer
BST : Barium Strontium Titanate
Cs ↑Cp ↓⇒
⇒
Multi SAW filters
on LSI
Piezoelectric (PZT) MEMS
switch on LSI
Multiband wireless communication system to be
available in disaster (Tsunami) using white spaces of digital TV
Tunable SAW filter
using BST varactor
5 ⇔ 11 ⇔ 22MHz
28
FBAR on LSI for voltage
controlled oscillator
TV white space cognitive radio (IEEE 802.11af)29
(Collaborators : NICT, Murata Manufac.,Taiyo Yuden, Asahikasei electronics, Denso, Chiba Univ. ...)
30
(A.Kochhar, T.Matsumura, G.Zhang, R.Pokharel, K.Hashimoto,
M.Esashi, S.Tanaka, 2012 IEEE Ultrasonics Symp., 5E-3)
CMOS-FBAR voltage controlled oscillator
31
PZT MEMS Switch on LSI
(K.Matsuo, M.Moriyama, M.Esashi and S.Tanaka, IEEE MEMS 2012, 1153-1156)
Displacement : 5μm / 10V
PZT : Lead Zirconate Titanate Piezoelectric material
32
Boron doped diamond (BDD) electrode array (20×20) on LSI for amperometric
biosensor (Bio-LSI)
(T.Hayasaka, S.Yoshida, K.Y.Inoue, M.Nakano, T.Matsue, M.Esashi, and S.Tanaka,
J. of Microelectromechanical Systems, 24, 4 (2015) 958-967)
33
Screening of medicine for cancer cells
by measuring oxygen reduction current
2D imaging of histamine diffusion
(K.Y.Inoue, M.Esashi, T.Matsue et.al., Lab on a
chip, 15 (2015) 848 – 856)
Application of the Bio-LSI for
measuring histamine concentration
34
100×100 active matrix
nc-Si emitter array
10 beams
Concept of massive parallel electron beam exposure system using nc-Si emitter
10 Tr. / wafer
=10 times / 10 beams
12
8 4
4
(M.Esashi, A.Kojima, N.Ikegami, H.Miyaguchi and N.Koshida, Microsystems & Nanoeng. , 1 (2015) 15029)
Nano crystaline (nc) Si emitter
(A.Kojima et.al., Proc. SPIE Alternative Lithography
Technologies V, 8680 (2013) 868001-868017) 35
36
nc-Si emitter array with
TSV and 100×100 active
matrix LSI
(N.Ikegami, T.Yoshida, A.Kojima,
H.Miyaguchi, M.Muroyama,
S.Yoshida, K.Totsu, N.Koshida,
M.Esashi, IEEE NEMS (2016) C2L-B-
5)
(H.Miyaguchi, A.Kojima, N.Ikegami,
M.Muroyama, S.Yoshida,
N.Koshoida and M.Esashi,
IEEE NEMS (2016) A1L-B-2)
37
Driver circuit for 1
electron source in
100×100 array
(M.Esashi, A.Kojima, N.Ikegami,
H.Miyaguchi and N.Koshida,
Microsystems &
Nanoengineering (2015) 1,
15029(1-8))
38
Book “Development of massive
parallel electron beam drawing
- for digital fabrication of LSI”
published in June 6, 2018
Prototype of EB write system with 100×100 active matrix emitter array
39
1. Introduction
2. Heterogeneous integration (MEMS on LSI)
3. Open collaboration
(Hands-on access fabrication facility and MEMS showroom)
Semiconductor Research Institute (1961~2008)
Prof. emeritus
Jun-ich Nishizawa
40Nishizawa memorial research center
41
Shared facility for industry to prototype MEMS devices (4 / 6 inch)
Hands-on-access fab.
Companies which can not
prepare their own facility
dispatch their employees to
operate equipment by
themselves for development
and small volume production.
Assoc. Prof. K.Totsu
Companies are
allowed to sell
MEMS devices
produced in the fab.
(since July 2013)
Layout of the Hands-on access fab. for 4/6 inch wafer
Equipment used
for transistor
production until
2008 (Tokin)
Newly
Installed
Donated by
industry
Transferred
from other
lab
42
43Users of the Hands-on-access fab.
Hands-on-access fab. users44
45
Pulse quantum cascade laser developed
using the Hands-on-access fab.
(Hamamatsu Photonics)
Commercialized MEMS using
the Hands-on-access fab.
46
47
Sendai MEMS showroomHistorical museum of technology
Business matching room
Process equipment display room
Exhibition rooms in Jun-ichi Nishizawa Memorial Research Center
http://www.mu-sic.tohoku.ac.jp/nishizawa/
Historical Museum of Technologyhttp://www.music.tohoku.ac.jp/museumE/index.html
48
49
Desk J : Infrared imager, Range imager using optical scanner
Case A : Imaging and optical mems, RF MEMS
Case B : Pressure sensor, Microphone, Accelerometer
Case C : Gyroscope, Micro-nanomachining
Rack K : Design and fabrication of CMOSLSI
Desk L : Semiconductor ion sensor (ISFET)
Case D : Micro sensors for medical applications
Case E : Micro fluidics, Heterogeneous integration, Harsh
environment devices
Case F : Power MEMS, Actuators
Case G : Fraunhofer institute
Desk M : iCAN (MEMS application contest)
Desk N : 8×8 Infrared sensor arry
Case H : Open collaboration with MEMS PC and μSIC
Case I : IMEC
Rack O : Awards
http://www.mu-
sic.tohoku.ac.jp/showroom_e/index.html
Sendai MEMS showroom
(MEMS Park Consortium (MEMSPC))
50
Filed papers which can be retrieved by key words
Total 500 files
51
Parts which can be retrieved by key words
52
MEMS Seminar in Tokyo (Aug. 23-25, 2006) 280 attendees
MEMS Seminar in Sendai (Aug. 22-24, 2007) 75 attendees
MEMS Seminar in Fukuoka (Aug.20-22, 2008) 150 attendees
MEMS Seminar in Nagoya (Aug.4-6, 2009) 100 attendees
MEMS Seminar in Tsukuba (Aug.5-7, 2010) 211 attendees
MEMS Seminar in Kyoto (Aug.9-11, 2011) 175 attendees
MEMS Seminar in Tokyo (Aug.22-24, 2012) 226 attendees
MEMS Seminar in Tsukuba Univ.(Aug.7-9, 2013)110 attendees
MEMS Seminar in Osaka (Aug.5-7, 2014) 140 attendees
MEMS Seminar in Toyohashi (Aug.5-7, 2015) 161 attendees
MEMS Seminar in Sendai (Aug.3-5, 2016) 116 attendees
MEMS Seminar in Kawasaki (July 31 - Aug.2, 2017) 181 attendees
MEMS Seminar in Toyota Inst. of Tech. (Aug.2 - 4, 2018) 72 attendees
MEMS Seminar in Kawasaki (July 29-31, 2019)
MEMS intensive course (Free)
11th MEMS Engineer Forum (April 25-26, 2019) (Ryogoku, Tokyo) 829 attendees in 2 days
12th MEMS Engineer Forum (April 22-23, 2020) (Ryogoku, Tokyo) http://www.m-e.-f.info/
MEMS Park Consortium (MEMSPC) (http://www.memspc.jp)
53
MEMS Training Program in Sendai MEMS PC
Since Apr.2007. Fee 1 million yen. Trainee participate with own subject.
16 companies participated.
Planning,
design
Fabrication
(4 inch process)Testing
Presentation,
report
10 ~ 20 d 30 ~ 60 d ~ 10 d 3 d
Lectures on Internet
School
3 months
Design Training of Fabrication Example of
development and
commercialization
(Pressure sensor)
FhG Germany – Sendai city partnership
signing ceremony in Munich (July15,2005)
FhG Germany – WPI-AIMR Tohoku Univ.
partnership signing ceremony in Sendai
(Nov. 8, 2011)
FhG Project center in WPI-AIMR, Tohoku
Univ. (April 1, 2012)
Collaboration with FhG
(Fraunhofer Institute) in
Germany
1st Fraunhofer Symposium in Sendai
“Doing Worldwide Business via MEMS
technology” (Oct.19, 2005)
13th Fraunhofer Symposium in Sendai
(April 15, 2019)
54
55
(J.Froemel et.al. (ENAS, Fh.G), J. of Microelectromechanical Systems, 24 (2015) 1973)
50℃
Low temperature SLID (Solid-Liquid Inter-Diffusion) bonding with Cu- Ga
Old method to fill an eroded tooth (amalgam method)
(UV curable resin at present)
Cu powder + Hg → Solidify (Metallic compound)
Electroplating of Ga
Cu
GaCuGa2
Signing ceremony (2012/6/11)
Strategic PartnerTohoku U ⋅ Stanford U ⋅ EPFL
Tohoku U
Stanford U“your lab and imec are very
complementary” Rudy Lauwereins,
Vice-President of IMEC
56
2012/6/21 Seminar at IMEC 2013/11/8 Seminar in Sendai 2014/11/12 Seminar at IMEC
(IMEC M.Yoneyama 2012/6/12)
2015/11/12 Seminar in Sendai
Collaboration with IMEC
MEMS core Co.Ltd.
(Contract development)
Advantest component Co.Ltd.
(Contract production)
Micro System Integration Center
(Tohoku Univ.) (Hands-on access fab.) Faculty of Eng. (Tohoku Univ.)
(Initial stage prototyping)
MEMS Park
Consortium
(MEMSPC)
57
Company
Open collaboration by MEMSPC in Sendai
58
“3D and IC integration of MEMS” Wiley-VCH (2020)
Introduction
1 Overview (M. Esashi (Tohoku Univ.(Japan)))
System on chip
2. Bulk micromachining (X. X. Li (SIMIT(China)))
2 supplementary. Packaging-stress-suppressed suspension technology (X. X. Li (SIMIT(China)))
3. Poly Si surface micromachining and integrated inertia sensor (M. Judy (Analog Devices (USA)))
3 supplementary. Epitaxial poly Si micromachining (M. Esashi (Tohoku Univ.(Japan)))
4. Poly SiGe surface micromachining (C. Low (InSense Inc. (USA)))
5. Metal surface micromachining (M. Sasaki (Toyota Tech. Inst. (Japan)))
6. MEMS using CMOS wafer (W. Fang (Nat. Tsing Hua Univ.(Taiwan)))
7. Wafer transfer (M. Esashi (Tohoku Univ.(Japan)))
8. Piezoelectric MEMS (T. Kobayashi (AIST(Japan))))
8 supplementary. Heterogeneously Integrated Aluminum Nitride MEMS
Resonators and Filters (G. Piazza (Carnegie Mellon Univ. (USA)))
Bonding, sealing and interconnection
9. Anodic bonding (M. Esashi (Tohoku Univ.(Japan)))
10. Direct bonding, (Hideki Takagi (AIST (Japan))
11. Metal bonding (J. Froemel (Tohoku Univ. (Japan)))
11 supplementary 1. Reactive bonding (J. Froemel (Tohoku Univ. (Japan)))
11 supplementary 2. Soldering by local heating (L. Lin (U. C. Berkeley (USA)))
12. Polymer bonding (F. Niklaus (KTH (Sweden)))
13. Episeal (A. Prtridge (SiTIME (USA)))
14. Buried channels in monolithic Si (K. Maenaka (Univ. of Hyogo (Japan))
15. Through-Substrate-Vias (Z. Wang (Tsinghua University (China))
16. Packaging, sealing and interconnection (M. Esashi (Tohoku Univ.(Japan)))
16 supplementary. Vacuum packaging (M. Esashi (Tohoku Univ.(Japan)))
59
Prof. Prof. Prof. Assos.Prof. Assos.Prof. Assos.Prof.
Takahito Shuji Yoichi Kentaro Masanori Shinya
Ono Tanaka Haga Totsu Muroyama Yoshida
(NEMS) (RF MEMS) (Medical (Open (LSI design)(Piezo MEMS)
applications) collaboration)
Acknowledgment to collaborators
Asso. Prof.
Jörg Frömel
(Fraunhofer
project center)
Basics of MEMSby M.Esashi (Morikita
shuppan, 2009)
Future MEMS -
Fusion with LSI -by M.Esashi and T.Ono
(Morikita shuppan,
May, 2016)
(in Japanese)