stp14nk60z - stp14nk60zfp stb14nk60z - stb14nk60z-1...
TRANSCRIPT
1/14January 2003
STP14NK60Z - STP14NK60ZFPSTB14NK60Z - STB14NK60Z-1 - STW14NK60Z
N-CHANNEL 600V-0.45Ω-13.5A TO-220/FP/D2PAK/I2PAK/TO-247Zener-Protected SuperMESH™Power MOSFET
TYPICAL RDS(on) = 0.45 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTIONThe SuperMESH™ series is obtained through anextreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushingon-resistance significantly down, special care is tak-en to ensure a very good dv/dt capability for themost demanding applications. Such series comple-ments ST full range of high voltage MOSFETs in-cluding revolutionary MDmesh™ products.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC LIGHTING
ORDERING INFORMATION
TYPE VDSS RDS(on) ID Pw
STP14NK60ZSTP14NK60ZFPSTB14NK60ZSTB14NK60Z-1STW14NK60Z
600 V600 V600 V600 V600 V
< 0.5 Ω< 0.5 Ω< 0.5 Ω< 0.5 Ω< 0.5 Ω
13.5 A13.5 A13.5 A13.5 A13.5 A
160 W40 W
160 W160 W160 W
SALES TYPE MARKING PACKAGE PACKAGING
STP14NK60Z P14NK60Z TO-220 TUBE
STP14NK60ZFP P14NK60ZFP TO-220FP TUBE
STB14NK60ZT4 B14NK60ZT4 D2PAK TAPE & REEL
STB14NK60Z-1 B14NK60Z-1 I2PAK TUBE
STW14NK60Z W14NK60Z TO-247 TUBE
TO-220 TO-220FP1
23
I2PAK1
3
D2PAK1 2 3
12
3
TO-247
INTERNAL SCHEMATIC DIAGRAM
STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
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ABSOLUTE MAXIMUM RATINGS
() Pulse width limited by safe operating area(1) ISD ≤13.5 A, di/dt ≤200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’sESD capability, but also to make them safely absorb possible voltage transients that may occasionally beapplied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient andcost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid theusage of external components.
Symbol Parameter Value Unit
STP14NK60Z STB14NK60ZSTB14NK60Z-1STW14NK60Z
STP14NK60ZFP
VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 600 V
VGS Gate- source Voltage ± 20 V
ID Drain Current (continuous) at TC = 25°C 13.5 13.5 (*) A
ID Drain Current (continuous) at TC = 100°C 8.5 8.5 (*) A
IDM () Drain Current (pulsed) 54 54 (*) A
PTOT Total Dissipation at TC = 25°C 160 40 W
Derating Factor 1.28 0.32 W/°C
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ) 4000 V
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
TjTstg
Operating Junction TemperatureStorage Temperature
-55 to 150 °C
TO-220/D2PAKI2PAK/TO-247
TO-220FP
Rthj-case Thermal Resistance Junction-case Max 0.78 3.1 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 50 °C/W
Tl Maximum Lead Temperature For Soldering Purpose 300 °C
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive(pulse width limited by Tj max)
12 A
EAS Single Pulse Avalanche Energy(starting Tj= 25 °C, ID = IAR, VDD= 50 V)
300 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVGSO Gate-Source BreakdownVoltage
Igs=± 1mA (Open Drain) 30 V
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STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.2. Pulse width limited by safe operating area.3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-sourceBreakdown Voltage
ID = 1 mA, VGS = 0 600 V
IDSS Zero Gate VoltageDrain Current (VGS = 0)
VDS = Max RatingVDS = Max Rating, TC = 125 °C
150
µAµA
IGSS Gate-body LeakageCurrent (VDS = 0)
VGS = ± 20 V ±10 µA
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 100 µA 3 3.75 4.5 V
RDS(on) Static Drain-source OnResistance
VGS = 10 V, ID = 6 A 0.45 0.5 Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS = 15 V, ID = 6 A 11 S
CissCossCrss
Input CapacitanceOutput CapacitanceReverse TransferCapacitance
VDS = 25 V, f = 1 MHz, VGS = 0 222024057
pFpFpF
Coss eq. (3) Equivalent OutputCapacitance
VGS = 0V, VDS = 0V to 480 V 122 pF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)tr
Turn-on Delay TimeRise Time
VDD = 300 V, ID = 6 ARG = 4.7Ω VGS = 10 V(Resistive Load see, Figure 3)
2618
nsns
QgQgsQgd
Total Gate ChargeGate-Source ChargeGate-Drain Charge
VDD = 480 V, ID = 12 A,VGS = 10 V
7513.238.6
nCnCnC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(off)tf
Turn-off Delay TimeFall Time
VDD = 300 V, ID = 6 ARG = 4.7Ω VGS = 10 V(Resistive Load see, Figure 3)
6213
nsns
tr(Voff)tftc
Off-voltage Rise TimeFall TimeCross-over Time
VDD = 480 V, ID = 12 A,RG = 4.7Ω, VGS = 10 V(Inductive Load see, Figure 5)
129.522
nsnsns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISDISDM (2)
Source-drain CurrentSource-drain Current (pulsed)
1248
AA
VSD (1) Forward On Voltage ISD = 12 A, VGS = 0 1.6 V
trrQrr
IRRM
Reverse Recovery TimeReverse Recovery ChargeReverse Recovery Current
ISD = 12 A, di/dt = 100 A/µsVR = 50 V, Tj = 150°C(see test circuit, Figure 5)
6646.8
20.5
nsµCA
STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
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Safe Operating Area For TO-247 Thermal Impedance For TO-247
Safe Operating Area For TO-220FP
Safe Operating Area For TO-220/D2PAK/I2PAK
Thermal Impedance For TO-220FP
Thermal Impedance For TO-220/D2PAK/I2PAK
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STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
Transfer Characteristics
Gate Charge vs Gate-source Voltage
Transconductance Static Drain-source On Resistance
Output Characteristics
Capacitance Variations
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Source-drain Diode Forward Characteristics
Maximum Avalanche Energy vs Temperature
Normalized BVDSS vs Temperature
Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs Temp.
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STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
Fig. 5: Test Circuit For Inductive Load SwitchingAnd Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit ForResistive Load
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DIM.mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
L6
A
C D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
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STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
L2
A
B
D
E
H G
L6
¯ F
L3
G1
1 2 3
F2
F1
L7
L4L5
DIM.mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.5 0.045 0.067
F2 1.15 1.5 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
TO-220FP MECHANICAL DATA
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DIM.mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
D1 8 0.315
E 10 10.4 0.393
E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
M 2.4 3.2 0.094 0.126
R 0.4 0.015
V2 0º 4º
D2PAK MECHANICAL DATA
3
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STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
DIM.mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
e 2.4 2.7 0.094 0.106
E 10 10.4 0.393 0.409
L 13.1 13.6 0.515 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055
L
L1
B2
B
D
EA
C2
CA
1
L2
e
P011P5/E
TO-262 (I2PAK) MECHANICAL DATA
STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
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DIM.mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.85 5.15 0.19 0.20
D 2.20 2.60 0.08 0.10
E 0.40 0.80 0.015 0.03
F 1 1.40 0.04 0.05
F1 3 0.11
F2 2 0.07
F3 2 2.40 0.07 0.09
F4 3 3.40 0.11 0.13
G 10.90 0.43
H 15.45 15.75 0.60 0.62
L 19.85 20.15 0.78 0.79
L1 3.70 4.30 0.14 0.17
L2 18.50 0.72
L3 14.20 14.80 0.56 0.58
L4 34.60 1.36
L5 5.50 0.21
M 2 3 0.07 0.11
V 5º 5º
V2 60º 60º
Dia 3.55 3.65 0.14 0.143
TO-247 MECHANICAL DATA
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STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*D2PAK FOOTPRINT
* on sales type
DIM.mm inch
MIN. MAX. MIN. MAX.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197
BASE QTY BULK QTY
1000 1000
REEL MECHANICAL DATA
DIM.mm inch
MIN. MAX. MIN. MAX.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W 23.7 24.3 0.933 0.956
TAPE MECHANICAL DATA
STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
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