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IRG4PC50UDINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesFeaturesFeaturesFeaturesFeatures

E

G

n-ch an ne l

C

VCES = 600V

VCE(on) typ. = 1.65V

@VGE = 15V, IC = 27A

Parameter Min. Typ. Max. UnitsRJC Junction-to-Case - IGBT ------ ------ 0.64RJC Junction-to-Case - Diode ------ ------ 0.83 C/WRCS Case-to-Sink, flat, greased surface ------ 0.24 ------RJA Junction-to-Ambient, typical socket mount ----- ----- 40Wt Weight ------ 6 (0.21) ------ g (oz)

Thermal Resistance

UltraFast CoPack IGBT

12/30/00

Absolute Maximum Ratings Parameter Max. Units

VCES Collector-to-Emitter Voltage 600 VIC @ TC = 25C Continuous Collector Current 55IC @ TC = 100C Continuous Collector Current 27ICM Pulsed Collector Current 220 AILM Clamped Inductive Load Current 220IF @ TC = 100C Diode Continuous Forward Current 25IFM Diode Maximum Forward Current 220VGE Gate-to-Emitter Voltage 20 VPD @ TC = 25C Maximum Power Dissipation 200PD @ TC = 100C Maximum Power Dissipation 78TJ Operating Junction and -55 to +150TSTG Storage Temperature Range C

Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)Mounting Torque, 6-32 or M3 Screw. 10 lbfin (1.1 Nm)

UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC packageBenefits Generation 4 IGBT's offer highest efficiencies available IGBT's optimized for specific application conditions HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's

PD 91471B

W

TO-247AC

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Parameter Min. Typ. Max. Units ConditionsQg Total Gate Charge (turn-on) ---- 180 270 IC = 27AQge Gate - Emitter Charge (turn-on) ---- 25 38 nC VCC = 400V See Fig. 8Qgc Gate - Collector Charge (turn-on) ---- 61 90 VGE = 15Vtd(on) Turn-On Delay Time ---- 46 ---- TJ = 25Ctr Rise Time ---- 25 ---- ns IC = 27A, VCC = 480Vtd(off) Turn-Off Delay Time ---- 140 230 VGE = 15V, RG = 5.0tf Fall Time ---- 74 110 Energy losses include "tail" andEon Turn-On Switching Loss ---- 0.99 ---- diode reverse recovery.Eoff Turn-Off Switching Loss ---- 0.59 ---- mJ See Fig. 9, 10, 11, 18Ets Total Switching Loss ---- 1.58 1.9td(on) Turn-On Delay Time ---- 44 ---- TJ = 150C, See Fig. 9, 10, 11, 18tr Rise Time ---- 27 ---- ns IC = 27A, VCC = 480Vtd(off) Turn-Off Delay Time ---- 240 ---- VGE = 15V, RG = 5.0tf Fall Time ---- 130 ---- Energy losses include "tail" andEts Total Switching Loss ---- 2.3 ---- mJ diode reverse recovery.LE Internal Emitter Inductance ---- 13 ---- nH Measured 5mm from packageCies Input Capacitance ---- 4000 ---- VGE = 0VCoes Output Capacitance ---- 250 ---- pF VCC = 30V See Fig. 7Cres Reverse Transfer Capacitance ---- 52 ---- = 1.0MHztrr Diode Reverse Recovery Time ---- 50 75 ns TJ = 25C See Fig.

---- 105 160 TJ = 125C 14 IF = 25AIrr Diode Peak Reverse Recovery Current ---- 4.5 10 A TJ = 25C See Fig.

---- 8.0 15 TJ = 125C 15 VR = 200VQrr Diode Reverse Recovery Charge ---- 112 375 nC TJ = 25C See Fig.

---- 420 1200 TJ = 125C 16 di/dt 200A/sdi(rec)M/dt Diode Peak Rate of Fall of Recovery ---- 250 ---- A/s TJ = 25C

During tb ---- 160 ---- TJ = 125C

Parameter Min. Typ. Max. Units ConditionsV(BR)CES Collector-to-Emitter Breakdown Voltage 600 ---- ---- V VGE = 0V, IC = 250AV(BR)CES/TJ Temperature Coeff. of Breakdown Voltage ---- 0.60 ---- V/C VGE = 0V, IC = 1.0mAVCE(on) Collector-to-Emitter Saturation Voltage ---- 1.65 2.0 IC = 27A VGE = 15V

---- 2.0 ---- V IC = 55A See Fig. 2, 5---- 1.6 ---- IC = 27A, TJ = 150C

VGE(th) Gate Threshold Voltage 3.0 ---- 6.0 VCE = VGE, IC = 250AVGE(th)/TJ Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/C VCE = VGE, IC = 250Agfe Forward Transconductance 16 24 ---- S VCE = 100V, IC = 27AICES Zero Gate Voltage Collector Current ---- ---- 250 A VGE = 0V, VCE = 600V

---- ---- 6500 VGE = 0V, VCE = 600V, TJ = 150CVFM Diode Forward Voltage Drop ---- 1.3 1.7 V IC = 25A See Fig. 13

---- 1.2 1.5 IC = 25A, TJ = 150CIGES Gate-to-Emitter Leakage Current ---- ---- 100 nA VGE = 20V

Switching Characteristics @ TJ = 25C (unless otherwise specified)

Electrical Characteristics @ TJ = 25C (unless otherwise specified)

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Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental)

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

0.1

1

10

100

1000

0 1 10

C E

CI

, C

olle

cto

r-to

-Em

itte

r C

urr

en

t (A

)

V , Co llec to r-to -Em itte r Vo ltag e (V)

T = 1 5 0 C

T = 2 5 C

J

J

A

V = 1 5 V2 0 s P U L S E W ID T H

G E

1

1 0

1 0 0

1 0 0 0

4 6 8 1 0 1 2

CI ,

Col

lect

or-

to-E

mitt

er

Cu

rre

nt (

A)

G E

T = 25 C

T = 150C

J

J

V , G ate -to -E m itte r Vo ltag e (V)

A

V = 10V5s PULSE W IDTH

C C

0

1 0

2 0

3 0

4 0

0.1 1 1 0 1 0 0

f, Frequency (kHz)

Loa

d C

urre

nt (

A)

A

6 0 % o f rate d v o lta g e

Du ty c ycle: 5 0%T = 1 25 CT = 90 CGa te d rive a s spe cifi edTu rn -on lo sses inclu deeffe cts o f reve rse re cov ery

sin kJ

Po we r D issipa tion = 4 0 W

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Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case

Fig. 5 - Typical Collector-to-Emitter Voltagevs. Junction Temperature

Fig. 4 - Maximum Collector Current vs. CaseTemperature

1.0

1.5

2 .0

2 .5

-60 -40 -20 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 1 6 0

CE

V

, C

olle

ctor

-to-

Em

itte

r V

olta

ge (

V) V = 15V

80s PULSE W IDTHGE

A

T , Ju nc tion Te m p era tu re (C)J

I = 54A

I = 27A

I = 14A

C

C

C

0

10

20

30

40

50

60

25 50 75 100 125 150

Max

imum

DC

Col

lect

or C

urre

nt (A

)

T , Case Temperature (C)C

V = 15V G E

0.01

0 .1

1

0 .00001 0 .0001 0 .001 0 .01 0 .1 1 10

t , R ec tangu la r P u lse D ura tion (sec )1

thJC D = 0 .5 0

0 .0 1

0 .0 2

0 .0 5

0 .1 0

0 .2 0

S IN G L E P U L S E(T H E R M A L R E S P O N S E )T

herm

al R

espo

nse

(Z

)

P

t 2

1t

D M

N otes : 1 . D u ty fac tor D = t / t

2 . P eak T = P x Z + T

1 2

J D M thJC C

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Fig. 9 - Typical Switching Losses vs. GateResistance

Fig. 10 - Typical Switching Losses vs.Junction Temperature

Fig. 8 - Typical Gate Charge vs.Gate-to-Emitter Voltage

Fig. 7 - Typical Capacitance vs.Collector-to-Emitter Voltage

0

4

8

1 2

1 6

2 0

0 4 0 8 0 1 2 0 1 6 0 2 0 0

GE

V

,

Gat

e-to

-Em

itte

r V

olta

ge (

V)

gQ , Total Gate Charge (nC)

A

V = 400V I = 27A

C E

C

1.0

1.5

2 .0

2 .5

3 .0

0 1 0 2 0 3 0 4 0 5 0 6 0

G

Tot

al S

witc

hing

Los

ses

(mJ)

A

R , G a te R e s is ta n ce ( )

V = 4 8 0V V = 1 5 V T = 2 5 C I = 27 A

C C

G E

J

C

0.1

1

1 0

-60 -40 -20 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 1 6 0

Tot

al S

wit

chin

g Lo

sses

(m

J)

A

T , Junct ion Temperature (C)J

R = 5.0 V = 15V V = 480V

I = 54A

I = 27A

I = 14A

G

G E

C C

C

C

C

0

2 0 0 0

4 0 0 0

6 0 0 0

8 0 0 0

1 1 0 1 0 0

C E

C,

Ca

pa

cita

nce

(p

F)

V , C o llec to r-to -E m itte r Vo lta ge (V )

A

V = 0V , f = 1M HzC = C + C , C S H O R TE DC = CC = C + C

C ie s

C res

C oes

G Eie s g e g c c ere s g co e s c e g c

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Fig. 11 - Typical Switching Losses vs.Collector-to-Emitter Current

Fig. 12 - Turn-Off SOA

Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

1

10

100

0.6 1.0 1.4 1.8 2.2 2.6

FM

FIn

sta

nta

ne

ou

s F

orw

ard

Cu

rre

nt

- I

(

A)

F o rw a rd V o lta g e D ro p - V (V )

T = 150 C

T = 125 C

T = 25 C

J

J

J

1

10

100

1000

1 10 100 1000C

C E

G E

V , Collecto r-to-Em itter Voltage (V )

I ,

Col

lect

or-to

-Em

itter

Cur

rent

(A)

S A FE O P E R A TING A R E A

V = 20V T = 125 C

G EJ

0.0

2.0

4 .0

6 .0

8 .0

0 1 0 2 0 3 0 4 0 5 0 6 0

C

Tot

al S

witc

hin

g L

osse

s (m

J)

I , C o lle c to r- to-E m itte r C u rre n t (A )

A

R = 5 .0 T = 15 0 C V = 4 8 0 V V = 1 5 V

G

J

C C

G E

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Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt

Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt

0

300

600

900

1200

1500

100 1000fd i /d t - (A / s )

RR

Q

-

(nC

)

I = 10A

I = 25A

I = 50A

F

F

F

V = 2 00VT = 12 5 CT = 25 C

R

J

J

100

1000

10000

100 1000fd i /dt - (A/s)

di(

rec)

M/d

t -

(A

/s)

I = 50A

I = 25A

I = 10AF

F

F

V = 2 00VT = 12 5 CT = 25 C

R

J

J

1

10

100

100 1000fd i /d t - (A/s)

I

-

(A)

IRR

M

I = 10A

I = 25A

I = 50A

F

F

F

V = 200 VT = 1 25 CT = 2 5 C

R

J

J

20

40

60

80

100

120

140

100 1000fdi /dt - (A/s)

t

-

(ns)

rr

I = 50A

I = 25A

I = 10A

F

F

F

V = 200VT = 125 CT = 25 C

R

J

J

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t1

Ic

V ce

t1 t2

90% Ic10% V ce

td (o ff) tf

Ic

5% Ic

t1+ 5 SV ce ic d t

90% V ge

+ V ge

E of f =

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, DefiningEoff, td(off), tf

V ce ie d tt2

t1

5% V ce

IcIpkV cc

10% Ic

V ce

t1 t2

D U T V O LT A G EA N D C U R R E N T

G A T E V O LT A G E D .U .T .

+ V g10% +V g

90% Ic

trtd (on)

D IO D E R E V E R S ER E C O V E R Y E N E R G Y

tx

E on =

E rec =t4

t3V d id d t

t4t3

D IO D E R E C O V E R YW A V E FO R M S

Ic

V pk

10% V cc

Irr

10% Irr

V cc

trr Q rr =trr

tx id d t

Same typedevice asD .U.T.

D .U .T.

430F80%of Vce

Fig. 18a - Test Circuit for Measurement ofILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf

Fig. 18c - Test Waveforms for Circuit of Fig. 18a,Defining Eon, td(on), tr

Fig. 18d - Test Waveforms for Circuit of Fig. 18a,Defining Erec, trr, Qrr, Irr

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V g G A T E S IG N A LD E V IC E U N D E R T E S T

C U R R E N T D .U .T .

V O LT A G E IN D .U .T .

C U R R E N T IN D 1

t0 t1 t2

D.U.T.

V *c

50V

L

1000V

6000 F 100 V

RL=480V

4 X IC @25C0 - 480V

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D im en s ion s in M il lim e te rs a nd (Inches )CONFORM S TO J EDEC OU TLIN E TO-2 47AC (TO-3P)

- D -5 .3 0 (.2 0 9 )4 .7 0 (.1 8 5 )

3 .6 5 ( .1 4 3 )3 .5 5 ( .1 4 0 )

2.5 0 ( .0 8 9)1.5 0 ( .0 5 9)

4

3 X0 .8 0 ( .0 3 1 )0 .4 0 ( .0 1 6 )

2 .6 0 ( .1 0 2 )2 .2 0 ( .0 8 7 )3 .4 0 ( .1 3 3 )

3 .0 0 ( .1 1 8 )

3 X

0.2 5 ( .0 1 0 ) M C A S

4 .3 0 ( .1 7 0 )3 .7 0 ( .1 4 5 )

- C -

2X5.5 0 ( .2 1 7)4.5 0 ( .1 7 7)

5 .5 0 (.2 17 )

0 .2 5 ( .0 1 0 )

1 .4 0 ( .0 56 )1 .0 0 ( .0 39 )

DM MB- A -

1 5 .9 0 ( .6 2 6 )1 5 .3 0 ( .6 0 2 )

- B -

1 2 3

2 0 .3 0 (.8 0 0 )1 9 .7 0 (.7 7 5 )

1 4 .8 0 (.5 8 3 )1 4 .2 0 (.5 5 9 )

2 .4 0 (.0 9 4 )2 .0 0 (.0 7 9 )

2 X

2 X

5 .4 5 ( .2 1 5 )

*

N O T E S : 1 D IM E N S IO N S & T O LE R A N C IN G P E R A N S I Y 14 .5M , 1 98 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M IL LIM E T E R S (IN C H E S ). 4 C O N F O R M S T O J E D E C O U T L IN E T O -2 4 7A C .

L E A D A S S IG N M E N T S 1 - G A T E 2 - C O L L E C T O R 3 - E M IT T E R 4 - C O L L E C T O R

* LO N G E R LE A D E D (2 0m m ) V E R S IO N A V A IL A B L E (T O -2 47 A D )T O O R D E R A D D "-E " S U F F IXT O P A R T N U M B E R

Repetitive rating: VGE = 20V; pulse width limited by maximum junction temperature

(figure 20)

VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 5.0 (figure 19)Pulse width 80s; duty factor 0.1%.Pulse width 5.0s, single shot.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/00