x線反射率法の基礎と応用 -...
TRANSCRIPT
2004-08-05
n=1--i1
10-5, 10-6
=(-2-2i)1/2c(2)1/2c
2
( ) ( )1 eeeen
kz-kz-1i-inkz-ikz- =
Snell 1
n
( )
2-12
-1
-1i--1ncos
2 cosn cos
c
2c
c
c
'
=
===
=
( n=1--i )
,
n=1--i (1)
10-510-6, 10-7n1,
( ) ( )
( ) ( )
=
+
=
r N x z f x M
r N x f x M
eA i i ii
i ii
eA ii
i ii
22
23
2
2
'
''
/
/
,(f, f)Zi/Mi1/2constant
*
**XAFS
(n) ()
(d)
()
X
0.0 0.2 0.4 0.6 0.8 1.0100
101
102
103
Incident Angle(deg)
Penetration Depth(nm)
10-4
10-3
10-2
10-1
100
Material: Si
X-ray:Cu-Ka1(1.54A) Reflectivity
( )
( )
R aR FR F
a i d R a EE
a
i
F F F
n n nn n n n
n n n n
n n n n n nn
R
n
n n n
n n n n n n n
+
+
+
=+
+
=
1 14 1 1
1 1
12
0
212
1 1 1
11
1
2 2
1 2
,, ,
, ,
,
, , ,
:
exp , ,
' exp /
( ) ( )( )
( )
+
12
2
2 1
2 2
16
2 2
, :
' , "
, ,
n n n
n A e n n n A e nN r f f MN r f
M
d
R :
R
0,12
0,12
En EnR
1
2
n()
d1
d2
dn=
R0,1
R1,2
R2,3
Rn-1,n
Rn+1,n=0
0 2 4 6 810-910-810-710-610-510-410-310-210-1100
Ref
lect
ivity
2Theta(deg)
SiO2/Si0.1nm
,
2(deg)
0.0 0.5 1.0 1.5 2.0 2.5 3.0
10-6
10-5
10-4
10-3
10-2
10-1
100
SiAl, , Cu
Ref
lect
ivity
CuAl
2.69, 3.99, 8.93g/cc
0.0 0.5 1.0 1.5 2.0 2.5 3.010
-7
10-610-510-410-310-210-1100
Al: 50nm
Al: 10nm
Ref
lect
ivity
2(deg)
SiAl
0.0 0.5 1.0 1.5 2.0 2.5 3.010-1010-910-810-710-610-510-410-310-210-1100
Ref
lect
ivity
2(deg)
Si
Al:50nm 1
21=2=0nm
1=1nm, 2=0nm
1=0nm, 2=1nm
TEM
Top-OxNitrideBottom-Ox
120(2.21g/cm3) 110 180(2.88g/cm3) 170 45(2.19g/cm3) 50
4.55.54.212
0.0 0.5 1.0 1.5 2.0 2.5 3.0
10-5
10-4
10-3
10-2
10-1
100 Sample:ADN-255
Ref
lect
ivity
2(deg)
* Si3N4(3.20g/cm3), SiO2( 2.30g/cm3)
SiOSiO: 110: 110
SiNSiN: 170: 170
SiOSiO: 50: 50
Spacer
curecure
frameworkframework
(Silica network)(Silica network)
spacerspacer
(organic polymer)(organic polymer)
organicorganic--inorganic hybrid gelinorganic hybrid gel porous filmporous film
SilicaSilica oligomeroligomer /Organic spacer/Solvents (mixture)/Organic spacer/Solvents (mixture)
SpinSpin--on (on (Si Si wafer)wafer)
GelationGelation & Solvent removal& Solvent removal
Organic Spacer RemovalOrganic Spacer Removal
(Cure (Cure
PorousPorous LowLow--kk FilmFilm
Cure
Spin coatGelation
( R.T. )
Porosity can be controlled by polymer/silica ratio
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.810-4
10-3
10-2
10-1
100
(deg)
The dielectric constant The dielectric constant vsvs film density for film density for
Porous silica thin filmsPorous silica thin films
Density (g/cm3)
Die
lect
ric
con s
t ant
Cure
Spin coatGelation
( R.T. )
Spin coat
nm
Porous 1.00g/cc, 295nm
Porous/Si-waferLow-k 1
Layer Density(g/cc) Thickness(nm) Roughness(nm) 0.5Porous 1.00 295 0.3(fix)Si 2.33 (fix) ---
0.2 0.3 0.4 0.5 0.6 0.7 0.810-3
10-2
10-1
100
2Theta(deg)
Calculation
10-3
10-2
10-1
100KP2
Measurement
Low-k 1
0.2 0.3 0.4 0.5 0.6 0.7 0.810-3
10-2
10-1
100
2Theta(deg)
Calculation
10-3
10-2
10-1
100KP2
Measurement
Porous
1.04g/cc, 554nm
/Si-wafer
Layer Density(g/cc) Thickness(nm) Roughness(nm) 0.3 1.04 554.0 0.3(fix)Si 2.33 (fix) ---
0.2 0.3 0.4 0.5 0.6 0.7 0.810-3
10-2
10-1
100
2Theta(deg)
Calculation
10-3
10-2
10-1
100
SiLK
Measurement
0.2 0.3 0.4 0.5 0.6 0.7 0.810-3
10-2
10-1
100
2Theta(deg)
Calculation
10-3
10-2
10-1
100
SiLK
Measurement
Layer Density(g/cc) Thickness(nm) Roughness(nm) 0.3 1.04 554 0.5 1.25 6 0.5Porous 1.00 295 0.3(fix)Si 2.33 (fix) ---
/Porous/Si
//Porous
1.251.2566nmnm
(3(38nm)8nm)
0.5 0.6 0.7 0.810-3
10-2
10-1
100
2Theta(deg)
Calculation
10-3
10-2
10-1
100
SiLK/KP2
Measurement
Low-k 1
0.5 0.6 0.7 0.810-3
10-2
10-1
100
2Theta(deg)
Calculation
10-3
10-2
10-1
100
SiLK/KP2
Measurement
*
Si(001)
Sample 19002.5
Sample 2Si
2=0.8, 1.0, 1.2, and 1.5Sample 1, 2
Sample 1
Sample 2
0m 5m 10m
10nm
(a)
0m 5m 10m
30nm
(b)
Sample 1
Sample 2
Thickness of SiO2: 45.6nm (by x-ray reflectivity)
Surface roughness: 0.4nm (by x-ray reflectivity)
Lateral correlation length: 200nm
Thickness of SiO2: 65.4nm
Surface roughness: 4.1nm
Lateral correlation length: 10nm
AFM images
10ppm/100ppm/
100nm10ppm/
0 50 100 150 200 250 300 350 400
0.87
0.88
0.89
0.90
B Data1_B
Density (g/cm3)
Temperature ( )
16ppm
DataLinear fit
Y = A + B X
Parameter Value error
-----------------------------------------------
A 0.88945 0.00192
B -4.94682E-5 7.30003E-6
-----------------------------------------------
SD N P
-----------------------------------------------
-0.94964 0.00243 7 0.00106
-----------------------------------------------
Coefficient of linear expansion is 1.6 * 10-5/K