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TRANSCRIPT
Large-capacitance devices consisting of
subthreshold CMOS operational amplifiers
Tomoki IIDA Tetsuya ASAI Yoshihito AMEMIYA
Department of Electrical Engineering, Hokkaido University
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第22回 回路とシステム軽井沢ワークショップ
The 22nd Workshop on Circuits and Systemsin Karuizawa, April 20-21, 2009
I0 I1 I2
C
Vin+Vinー
Vout
Vdd
dB
Vin
Vdd
R1 R1
R2 R2C C
Vout
Vin
Vb
M1
Iref
Vb
Vdd
Vb Vb
Vout
0
40
80
120
1 1 k 1 M 1 G
[dB
]
[Hz]
1
2
3
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VCM
Vb1
Vb2
VCMVdd
I0
サブスレッショルドCMOS演算増幅器
出力 Vout+
Vin+
出力 Voutー
Vinー
10
20
30
40
50
60
10 100 1 k
15 pF
1 pF
10 k 100 k 1 M
20
30
40
50
60
0 10 20 30 40 50
mV
dB
0
1
2
3
0 10 20 30 40 50
mV
V
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Vdd
gnd
I0CMOS
Vout
Vin Vin2
位相
利得-20
-10
0
1 10 100 1 k 10 k 100 k 1 M [Hz]
[dB
]
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φ φvb1
I2M2
M3 M4 M5 M7
M6 M8C1 C2 C3
M1
Iout
Iref
Iref
I1
vdd
gnd
t
V
t
V
Tt D t /T
I1
I2
t
I
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96.6
96.56
96.52
96.64
100 100.1 100.2
time [ms]
Iout
[pA
]
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