鄭 建 民10/07/2014

特色計畫簡報

子計畫三 :無鉛壓電陶瓷振動能採集器之研發

目前成果—懸臂樑量測

發電實驗設備的示意圖

目前成果

(1) 含鉛 (雙層 )-購買

(2) 無鉛 (單層 )-自製

(3) 無鉛 (雙層 )-自製

目前成果

Frequency (Hz)

5 10 15 20 25 30 35 40 45

Vol

tage

(V

)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

§t¹]µL¹](³æ¼h)µL¹](Âù¼h)

Tip Mass = 0 g, Amplitude =1.4 cm

目前成果

Tip Mass = 2.7 g, Amplitude =1.7 cm

Frequency (Hz)

5 10 15 20 25 30 35 40 45

Vol

tage

(V

)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0 §t¹]µL¹](³æ¼h)µL¹](Âù¼h)

目前成果

Tip Mass = 3.8 g, Amplitude =1.6 cm

Frequency (Hz)

5 10 15 20 25 30 35 40 45

Vol

tage

(V

)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5 §t¹]µL¹](³æ¼h)µL¹](Âù¼h)

目前成果

Tip Mass = 4.4 g, Amplitude =1.2 cm

Frequency (Hz)

5 10 15 20 25 30 35 40 45

Vol

tage

(V

)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5 §t¹]µL¹](³æ¼h)µL¹](Âù¼h)

目前成果Vmax 轉換效率 最佳

振動頻率最佳

Tip Mass

含鉛雙層(購買 )

3.4 V

無鉛單層(自製 )

1.3 V

無鉛雙層(自製 )

2.25 V

本計畫期間發表之壓電與介電相關期刊論文 ---14篇 (8篇SCI)1. Kai-Huang Chen*, Chien-Min Cheng, Jen-Hwan Tsai, Chin-Hsiung Liao, Shu-Hua Liang, “Dielectric and Piezoelectric Characteristics in Lead-Free Li x(K0.5Na0.5)1-

x(Nb0.8Ta0.2)O3 Piezoelectric Ceramics Prepared by Two-Step Calcination Method,” Japanese Journal of Applied Physics, Vol. 51, No. 9, 09MD11, Sep. 2012.

2. Fann-Wei Yang, Kai-Huang Chen*, Chien-Min Cheng, Electrical and Physical Characteristics of Vanadium-Doped Bi4Ti3O12 Ferroelectric Thin Films after Rapid Thermal Annealing,” Ferroelectrics, Vol. 435, Issue 1, pp. 55-61, Dec. 2012.

3. Chien-Min Cheng*, Kai-Huang Chen, Fann-Wei Yang, “Effect of Sintering Temperature on Piezoelectric and Ferroelectric Properties of Lead-Free Piezoelectric Ta-modified (K0.5N0.5)NbO3 Ceramics,” Ferroelectrics, Vol. 435, Issue 1, pp. 46-54, Dec. 2012.

4. Fann-Wei Yang, Kai-Huang Chen*, Chien-Min Cheng, Feng-Yi Su, “Bipolar resistive switching properties in transparent vanadium oxide resistive random access memory ”, Ceramics International, 39S, S729-S732, May 2013.

5. Wen-Chung Chang, Chih-Yung Wang, Kai-Huang Chen, Chien-Min Cheng*, “One-Transistor-Capacitor (1TC) Structure of Non-Volatile Ferroelectric RAM Using 0.95(Na0.5Bi0.5)TiO3-0.05BaTiO3 Thin Film”, Integrated Ferroelectrics, 143:1, 10-16, DOI: 10.1080/10584587.2013.795828, May 2013.

6. Wen-Chung Chang, Chih-Yung Wang, Kai-Huang Chen, Chien-Min Cheng*, “One-Transistor-Capacitor (1TC) Structure of Non-Volatile Ferroelectric RAM Using 0.95(Na0.5Bi0.5)TiO3-0.05BaTiO3 Thin Film”, Integrated Ferroelectrics, 143:1, 10-16, DOI: 10.1080/10584587.2013.795828, May 2013.

7. Kai-Huang Chen, Chien-Min Cheng*, Chun-Cheng Lin, Jen-Hwan Tsai, “Ferroelectric, Dielectric, and Physical Characteristics of (Ba 1-xSrx)(Ti1-yZry)O3 Thin Films Deposited Prepared by RF Magnetron Sputtering”, Integrated Ferroelectrics, 143:1, 32-39, DOI: 10.1080/10584587.2013.795837, May 2013.

8. Kai-Huang Chen, Chien-Min Cheng*, Chun-Cheng Lin, Jen-Hwan Tsai, “Fabrication and Electrical Characteristics of Metal-Ferroelectric Ba(Zr 0.1Ti0.9)O3 Film-Insulator-Silicon Structure for Nonvolatile Memory Devices Applications”, Integrated Ferroelectrics, 143:1, 40-46, DOI: 10.1080/10584587.2013.795840, May 2013.

9. Min-Chang Kuan, Fann-Wei Yang, Chien-Min Cheng*, Kai-Huang Chen, “Fabrication and Switching Characterizations of Copper Oxide Thin Films for Applications in Resistive Random Access Memory Devices,” Key Engineering Materials, Vol. 602-603, pp. 1052-1055, Mar. 2014.

10. Min-Chang Kuan, Fann-Wei Yang, Chien-Min Cheng*, Kai-Huang Chen, Jian-Tz Lee, “Electrical and Physical Properties of (K 0.5Na0.5)NbO3 Ferroelectric Thin Films,” Key Engineering Materials, Vol. 602-603, pp. 800-803, Mar. 2014.

11. Fann-Wei Yang, Chien-Min Cheng*, Kai-Huang Chen, “Electrical Characteristics in Transparent (Bi 3.25Nd0.75)(Ti2.9V0.1)O12 Ferroelectric Thin Films,” Key Engineering Materials, Vol. 602-603, pp. 777-780, Mar. 2014.

12. Min-Chang Kuan, Fann-Wei Yang, Chien-Min Cheng*, Kai-Huang Chen, “Fabrication and Switching Characterizations of Copper Oxide Thin Films for Applications in Resistive Random Access Memory Devices,” Key Engineering Materials, Vol. 602-603, pp. 1052-1055, Mar. 2014.

13. Min-Chang Kuan, Fann-Wei Yang, Chien-Min Cheng*, Kai-Huang Chen, Jian-Tz Lee, “Bipolar Switching Properties of the Manganese Oxide Thin Film RRAM Devices,” Key Engineering Materials, Vol. 602-603, pp. 1056-1059, Mar. 2014.

14. Kai-Huang Chen, Jen-Wei Huang, Chien-Min Cheng*, Jian-Yang Lin, Tzung-Shiun Wu, “Nonvolatile transparent manganese oxide thin film resistance random access memory devices”, Japanese Journal of Applied Physics, Vol. 53, 08NL03, July 2014.

102年 ~今之績效

與李大輝師提出 104年度”能源科技學術合作研究計畫” ---複審中 “應用於智慧綠建築外牆之陣列式微型風力發電裝置”

製作壓電薄片提供給陳文山師、李大輝師應用轉換效率量測 ----已在進行，下次呈現期刊論文 --- 至少 2 篇 / 每年研討會論文 --- 至少 15 篇 / 每年申請國科會計畫申請能源科技學術合作研究計畫申請產學計畫申請專利壓電薄片之應用

未來績效展望

• (b)

晶片摺層電容器結構與外觀

矩陣摺層電容器結構

1 Cell Capacitor = 20~30 nF1 Chip Capacitor = 100 nF ~ 120 nFDielectric Constant (r) = 100~180Leakage = 10-7 ~ 10-8 A/cm2

Retention = ~ 106 SecOperation Temp. = 85oCCharge Time = 0.5 ~ 2 Sec

Super Capacitor Chip Parameter