클린룸 오염제어 및 성능평가 실무 기술

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Year 2007 EUGENE ENC COMPANY LIMITED 클클클 클클클클 클 클클클클 클클 클클

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클린룸 오염제어 및 성능평가 실무 기술. 표 4. 작업자에 운동에 의해 발생되는 0.3㎛ 이상의 입자수 ( 매분 ). < 표 1> 산업용 클린룸에서 일반적으로 요구되는 청정도 수준. < 표 2> 바이오 클린룸에서 요구되는 청정도 등급. 반도체 웨이퍼 오염입자 피해. 반도체 DRAM 발전 동향. 클린룸 제어항목의 발전 방향. 300mm FAB CLEAN ROOM 의 NEED. 패턴의 미세화. 초고 집적화. Wafer 대구경화. Clean Room level 에서 - PowerPoint PPT Presentation

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  • 4. 0.3 ()

  • DRAM

  • 959697'9899000102030405 06 ~ 10 () 0.35 0.25 0.2~0.18 0.13 0.10DRAM 16M 64M 256M~1G 4G 16G 200mm 300mm 400mm 0.1 0.07 0.05 0.02 0.01 0.45 0.35 0.25 0.15 1X1010 / 2X109 /

    1EA/ml (0.1 )1EA/ml (0.5 ) 1EA/ml (0.02 ) / () 1 2~2.5 1 2

  • Clean Room level Wafer level WaferMicro contaminationControl Cluster C/R InfraC/R Total ContaminationControl SystemMINI - ENVIRONMENT - Contamination Free Manufacturing- - High yield300mm FAB CLEAN ROOM NEED

  • 198619891992199519982001200420072010(m)1.30.80.50.350.250.180.130.100.07(DRAM)1M 4M16M64M256M1G4G16G64G

    (CTM) Clean Tunnel Module

    FFU

    SMIF

    Intg Mini Enc.

  • 2.

  • ()()( ,,) 3. 2. [%]

    1980 1985 1990 401010402030203010 404010

  • () , 4 .

  • -- - -- - - ---- - -

    - - - - - - - - - - - - -

    - - -

  • Air ionization systemFan Filter UnitSMIF systemChemical air filterBoron clean filter Clean Tube System

  • Mini-Environment

    +

    ( ) ( )

    Know-how

  • 5

    Room layout , , cleaning (clean paper ) class clean bench , carrier box air shower pass box

  • 2.

    ( ) /

  • 1.

    (dry etching, CVD ) () (PVD, CMD ) sputtering / , , /vent , , ( , )/ , , photoresist, , , , (cleaning)

  • 7.

    CVD Sputter Photo lithography SEM Dry Etching SEM , Cleaning CVD Sputter . Water Mark Water Mark .

  • 8. /

    0.10.5~0.1 0.2~0.3 45/61~3/60.2~1/6 QC ( ) ( )

  • 5. Wafer Surface ScannerISPM

    capabilityWafer Surface ScannerIn Situ Particle MonitorOn-wafer (all defects)yesnoDefect locationOn waferyesno

    Full cycleyesno

    LocalnoyesReal-timenoyes

    Continuousnoyes

    productYes/noyes

  • 1. 2. * * *

  • Fig. 2-9 Airflow velocity effect on the average deposition velocity

  • FIGURE 5. Comparison of the model predictions With numerical and experimental data of Opiolka et al.(1990)FIGURE 6. Minimum temperature difference Required for = 10-4 and 10-5 cm/

  • 4. exhaust line ISPM 8. ISPM

    ISPM . (non-sampling)Sheath air focusing Non-focusing100% 100%

  • (a) Uniform case (20 Torr) Time (sec) (b)Non-Uniform case (5 Torr) Time (sec) Particle Count(#/sec)Particle Count(#/sec) 15. ISPM

  • Figure 16. Aerodynamic Lens

  • 18. ISPM (aero-dynamic lens ) 18. ISPM (1 areo-dynamic lens )

  • Figure 20. ISPM (3 aero-dynamic lens ) 5.

    ParticleContaminantsMolecularContaminants 1G : ~ um2G : um~0.1um2~50 Hard particleMolecular Control with Air filterUPLA, HEPA, Chemical FilterNOT control withAir filter, Nitrogen, Visual ContaminationNon-Visual

  • 6. (ASS : Air Scrubbing System)

    Short-TemMid-TemLong-Tem ASS Mini-ASSUV- Bulk Process